JP5078512B2 - 水晶デバイス - Google Patents
水晶デバイス Download PDFInfo
- Publication number
- JP5078512B2 JP5078512B2 JP2007231367A JP2007231367A JP5078512B2 JP 5078512 B2 JP5078512 B2 JP 5078512B2 JP 2007231367 A JP2007231367 A JP 2007231367A JP 2007231367 A JP2007231367 A JP 2007231367A JP 5078512 B2 JP5078512 B2 JP 5078512B2
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- JP
- Japan
- Prior art keywords
- crystal
- container
- crystal piece
- piece
- outer periphery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
- H03H9/0519—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps for cantilever
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1035—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by two sealing substrates sandwiching the piezoelectric layer of the BAW device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Description
Claims (7)
- 外周部と該外周部から切込溝によって部分的に機械的に分離している振動領域とを有する水晶片と、
前記水晶片の第1の主面において前記水晶片の外周部の全周に対してロウ材層を介して接合することにより前記第1の主面に接合した第1の容器と、
前記水晶片の第2の主面において前記水晶片の外周部の全周に対してロウ材層を介して接合することにより前記第2の主面に接合した第2の容器と、
を備え、
前記第1の容器、前記第2の容器及び前記水晶片の外周部によって形成された空間内に、前記水晶片の振動領域が密閉封入され、
前記水晶片は略長方形の平面外形形状を有し、前記水晶片の外周の3辺に沿うように連続的に前記切込溝が形成されることにより、前記外周の1辺に沿う連結領域でのみ前記振動領域が前記外周部に対して一体のものとして機械的に連続し、
前記水晶片は、前記振動領域の両方の主面にそれぞれ設けられた1対の励振電極と、前記1対の励振電極から前記連結領域の両側部にそれぞれ引き出されて前記切込溝の先端部に接して前記先端部によって食い込まれるように設けられた1対の引出電極と、を有し、
前記連結領域の両側部に対応して前記第2の容器に一対の水晶接続端子が設けられ、
前記引出電極と前記水晶接続端子とが前記切込溝の先端部に塗布された導電性接着剤により前記電気的に接続している水晶デバイス。 - 前記第2の容器の外底面に実装電極が設けられ、前記水晶接続端子と前記実装電極とが電気的に接続する、請求項1に記載の水晶デバイス。
- 前記水晶接続端子と電気的に接続し前記水晶片を用いる回路が集積化されたICチップが、前記振動領域とともに前記空間内に密閉封入されている、請求項1に記載の水晶デバイス。
- 前記回路は前記水晶片を用いる発振回路であり、表面実装用の水晶発振器として構成された請求項3に記載の水晶デバイス。
- 前記ロウ材層は共晶合金からなる、請求項1乃至4のいずれか1項に記載の水晶デバイス。
- 前記第1の容器及び前記第2の容器は積層セラミックからなる、請求項1乃至5のいずれか1項に記載の水晶デバイス。
- 前記切込溝の各先端部において前記切込溝が前記連結領域の側に食い込むように分岐して、前記連結領域にくびれ部が形成されている、請求項1乃至6のいずれか1項に記載の水晶デバイス。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007231367A JP5078512B2 (ja) | 2007-09-06 | 2007-09-06 | 水晶デバイス |
US12/205,116 US7745978B2 (en) | 2007-09-06 | 2008-09-05 | Quartz crystal device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007231367A JP5078512B2 (ja) | 2007-09-06 | 2007-09-06 | 水晶デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009065437A JP2009065437A (ja) | 2009-03-26 |
JP5078512B2 true JP5078512B2 (ja) | 2012-11-21 |
Family
ID=40431105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007231367A Expired - Fee Related JP5078512B2 (ja) | 2007-09-06 | 2007-09-06 | 水晶デバイス |
Country Status (2)
Country | Link |
---|---|
US (1) | US7745978B2 (ja) |
JP (1) | JP5078512B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5001393B2 (ja) * | 2009-09-16 | 2012-08-15 | 日本電波工業株式会社 | 圧電振動デバイス及び圧電振動デバイスの製造方法 |
JP5533135B2 (ja) * | 2010-03-30 | 2014-06-25 | 富士通株式会社 | パッケージ、圧電振動子及び圧電発振器 |
CN102270975B (zh) | 2010-06-04 | 2013-10-09 | 上海丽恒光微电子科技有限公司 | 晶振及其制作方法 |
JP2012169879A (ja) * | 2011-02-15 | 2012-09-06 | Nippon Dempa Kogyo Co Ltd | 圧電デバイス |
JP5804799B2 (ja) * | 2011-06-30 | 2015-11-04 | 日本電波工業株式会社 | 圧電振動片及び圧電デバイス |
JP5980530B2 (ja) * | 2012-03-15 | 2016-08-31 | 日本電波工業株式会社 | 圧電デバイス及び圧電デバイスの製造方法 |
JP5930532B2 (ja) | 2012-06-01 | 2016-06-08 | 日本電波工業株式会社 | 圧電振動片及び圧電デバイス |
DE102012106236A1 (de) * | 2012-07-11 | 2014-01-16 | Endress + Hauser Gmbh + Co. Kg | Verfahren zum Fügen von Keramikkörpern mittels eines Aktivhartlots, Baugruppe mit mindestens zwei miteinander gefügten Keramikkörpern, insbesondere Druckmesszelle |
JP6330370B2 (ja) * | 2014-03-03 | 2018-05-30 | 株式会社大真空 | 圧電振動デバイスの製造方法 |
JP6524679B2 (ja) | 2015-02-02 | 2019-06-05 | 富士通株式会社 | 水晶振動子の検査方法 |
JP6451367B2 (ja) * | 2015-02-06 | 2019-01-16 | 富士通株式会社 | 水晶振動子 |
JP7135576B2 (ja) * | 2018-08-17 | 2022-09-13 | セイコーエプソン株式会社 | 振動デバイス、振動デバイスの製造方法、電子機器および移動体 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5478694A (en) * | 1977-12-05 | 1979-06-22 | Matsushima Kogyo Co Ltd | Crystal vibrator |
JPS5513553A (en) * | 1978-07-14 | 1980-01-30 | Matsushima Kogyo Co Ltd | Crystal vibrator |
FR2441960A1 (fr) * | 1978-11-16 | 1980-06-13 | Suisse Horlogerie | Resonateur piezoelectrique travaillant en cisaillement d'epaisseur |
CH625372A5 (ja) * | 1979-07-06 | 1981-09-15 | Ebauchesfabrik Eta Ag | |
KR0158469B1 (ko) * | 1992-10-15 | 1999-03-20 | 모리시타 요이찌 | 발진자 |
JPH06132774A (ja) * | 1992-10-15 | 1994-05-13 | Matsushita Electric Ind Co Ltd | 発振子およびその製造方法 |
JPH07106905A (ja) * | 1993-10-06 | 1995-04-21 | Matsushita Electric Ind Co Ltd | 発振子 |
JPH09326663A (ja) | 1996-06-07 | 1997-12-16 | Matsushita Electric Ind Co Ltd | 振動子とその製造方法 |
JP2000164747A (ja) * | 1998-11-30 | 2000-06-16 | Nec Kansai Ltd | 気密パッケージ |
JP3887137B2 (ja) * | 1999-01-29 | 2007-02-28 | セイコーインスツル株式会社 | 圧電振動子の製造方法 |
JP4087186B2 (ja) * | 2002-06-25 | 2008-05-21 | 日本電波工業株式会社 | 水晶振動子の保持構造 |
JP2005236562A (ja) * | 2004-02-18 | 2005-09-02 | Seiko Epson Corp | 圧電発振器、及びこれを利用した携帯電話装置と電子機器 |
JP2006074567A (ja) * | 2004-09-03 | 2006-03-16 | Seiko Epson Corp | 圧電デバイス |
-
2007
- 2007-09-06 JP JP2007231367A patent/JP5078512B2/ja not_active Expired - Fee Related
-
2008
- 2008-09-05 US US12/205,116 patent/US7745978B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20090066190A1 (en) | 2009-03-12 |
JP2009065437A (ja) | 2009-03-26 |
US7745978B2 (en) | 2010-06-29 |
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