JP5070242B2 - リソグラフィ装置 - Google Patents
リソグラフィ装置 Download PDFInfo
- Publication number
- JP5070242B2 JP5070242B2 JP2009127256A JP2009127256A JP5070242B2 JP 5070242 B2 JP5070242 B2 JP 5070242B2 JP 2009127256 A JP2009127256 A JP 2009127256A JP 2009127256 A JP2009127256 A JP 2009127256A JP 5070242 B2 JP5070242 B2 JP 5070242B2
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- JP
- Japan
- Prior art keywords
- mask
- apodization
- pupil
- optical system
- illumination
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
Claims (3)
- リソグラフィ装置、特に、極紫外線(EUV)及び軟X線の波長領域のためのリソグラフィ装置であって、
照射光学系(206)と、
マスク(5)と、
投影光学系(126)と、
を備え、
前記照射光学系(206)は、前記マスク(5)が適切に不均一に照射され、それにより、瞳アポダイゼーション効果が少なくとも部分的に補償されるようにデザインされていることを特徴とするリソグラフィ装置。 - さらに、それぞれ別個の光学表面のアレイを有する複数の光学素子(102,104)を備えることを特徴とする請求項1に記載のリソグラフィ装置。
- 前記マスク(5)の角度に依存する反射率の補償が、走査による積分により行われる請求項1又は2に記載のリソグラフィ装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009127256A JP5070242B2 (ja) | 2009-05-27 | 2009-05-27 | リソグラフィ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009127256A JP5070242B2 (ja) | 2009-05-27 | 2009-05-27 | リソグラフィ装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005509416A Division JP4402656B2 (ja) | 2003-09-17 | 2003-09-17 | マスク及びリソグラフィ装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010108949A Division JP5070316B2 (ja) | 2010-05-11 | 2010-05-11 | マスク |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009224792A JP2009224792A (ja) | 2009-10-01 |
JP5070242B2 true JP5070242B2 (ja) | 2012-11-07 |
Family
ID=41241205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009127256A Expired - Fee Related JP5070242B2 (ja) | 2009-05-27 | 2009-05-27 | リソグラフィ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5070242B2 (ja) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04169898A (ja) * | 1990-11-02 | 1992-06-17 | Seiko Instr Inc | X線多層膜鏡構造体 |
JPH11295245A (ja) * | 1998-04-10 | 1999-10-29 | Rigaku Industrial Co | X線分光素子およびそれを用いたx線分析装置 |
JP2001027700A (ja) * | 1999-07-14 | 2001-01-30 | Nikon Corp | 多層膜反射鏡、多層膜反射鏡の製造方法、多層膜反射鏡の応力の制御方法および露光装置 |
JP2003014893A (ja) * | 2001-04-27 | 2003-01-15 | Nikon Corp | 多層膜反射鏡及び露光装置 |
DE50208750D1 (de) * | 2001-08-01 | 2007-01-04 | Zeiss Carl Smt Ag | Reflektives Projektionsobjektiv für EUV-Photolithographie |
JP3652296B2 (ja) * | 2001-10-26 | 2005-05-25 | キヤノン株式会社 | 光学装置 |
TWI226976B (en) * | 2002-03-18 | 2005-01-21 | Asml Netherlands Bv | Lithographic apparatus, and device manufacturing method |
WO2005015314A2 (en) * | 2003-07-30 | 2005-02-17 | Carl Zeiss Smt Ag | An illumination system for microlithography |
JP2005064135A (ja) * | 2003-08-08 | 2005-03-10 | Nikon Corp | フライアイミラー、それを有するx線露光装置及びx線露光方法 |
JP4095566B2 (ja) * | 2003-09-05 | 2008-06-04 | キヤノン株式会社 | 光学素子を評価する方法 |
-
2009
- 2009-05-27 JP JP2009127256A patent/JP5070242B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2009224792A (ja) | 2009-10-01 |
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