JP5064224B2 - デュアルバイアス制御回路 - Google Patents
デュアルバイアス制御回路 Download PDFInfo
- Publication number
- JP5064224B2 JP5064224B2 JP2007535310A JP2007535310A JP5064224B2 JP 5064224 B2 JP5064224 B2 JP 5064224B2 JP 2007535310 A JP2007535310 A JP 2007535310A JP 2007535310 A JP2007535310 A JP 2007535310A JP 5064224 B2 JP5064224 B2 JP 5064224B2
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- JP
- Japan
- Prior art keywords
- current
- bias
- voltage
- stage
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/504—Indexing scheme relating to amplifiers the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Signal Processing For Digital Recording And Reproducing (AREA)
Description
Claims (7)
- 増幅回路の少なくとも一つのステージにバイアス信号を供給するためのバイアス制御回路であって、
所定の制御特性のバイアス電流を生成するとともに、前記少なくとも一つのステージの入力端子に前記バイアス電流を供給するための電流生成手段と、
前記バイアス電流から得られる制御信号を受け取るとともに、前記制御信号に応じて前記少なくとも一つの増幅ステージの供給電圧を制限するための電圧制限手段と、を備え、
前記電流生成手段は、所定の電流制御特性を有する電圧−電流変換器を備え、
前記電流生成手段は、前記電圧−電流変換器の出力電流をコピーして前記バイアス電流及び第2の電流を生成するための電流ミラー手段を備え、前記第2の電流は、制限された前記供給電圧を生成するために電圧バッファ手段へ供給される
ことを特徴とするバイアス制御回路。 - 前記電圧バッファ手段は、前記第2の電流が流されるレジスタ手段に対して接続され、前記制御信号を生成するためのオペアンプを備えていることを特徴とする請求項1に記載のバイアス制御回路。
- 前記電圧制限手段は、供給電圧端子と前記少なくとも一つのステージとの間に接続された可変抵抗器手段を備えていることを特徴とする請求項1または2に記載のバイアス制御回路。
- 前記可変抵抗器手段は、その制御端子において前記制御信号を受け取るように構成されているトランジスタを備えていることを特徴とする請求項3に記載のバイアス制御回路。
- 前記増幅回路のそれぞれのステージに割り当てられる前記電流生成手段及び前記電圧制限手段の少なくとも二つを備えていることを特徴とする請求項1乃至4のいずれか一項に記載のバイアス制御回路。
- 増幅回路の少なくとも一つのステージに供給されるバイアス信号を制御する方法であって、
所定の制御特性のバイアス電流を生成するステップと、
前記少なくとも一つのステージの入力端子に前記バイアス電流を供給するステップと、
前記バイアス電流に応じて前記少なくとも一つの増幅ステージの供給電圧を制限するステップと、を含み、
所定の電流制御特性を有する電圧−電流変換器の出力電流を電流ミラー手段によりコピーして前記バイアス電流及び第2の電流を生成し、前記第2の電流を、制限された前記供給電圧を生成するために電圧バッファ手段へ供給する
ことを特徴とする方法。 - 少なくとも一つの増幅ステージと、請求項1乃至5のいずれか一項に記載のバイアス制御回路とを備えていることを特徴とする増幅回路。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04104940.4 | 2004-10-08 | ||
EP04104940 | 2004-10-08 | ||
PCT/IB2005/053269 WO2006038189A1 (en) | 2004-10-08 | 2005-10-05 | Dual bias control circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008516510A JP2008516510A (ja) | 2008-05-15 |
JP5064224B2 true JP5064224B2 (ja) | 2012-10-31 |
Family
ID=35457976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007535310A Expired - Fee Related JP5064224B2 (ja) | 2004-10-08 | 2005-10-05 | デュアルバイアス制御回路 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7944306B2 (ja) |
EP (1) | EP1800395B1 (ja) |
JP (1) | JP5064224B2 (ja) |
CN (1) | CN101036288B (ja) |
AT (1) | ATE480904T1 (ja) |
DE (1) | DE602005023502D1 (ja) |
WO (1) | WO2006038189A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008004034A1 (en) * | 2006-06-30 | 2008-01-10 | Freescale Semiconductor, Inc. | Integrated amplifier bias circuit |
KR101004851B1 (ko) * | 2008-12-23 | 2010-12-28 | 삼성전기주식회사 | 출력 제어 기능을 갖는 전력증폭기 시스템 |
US8890616B2 (en) * | 2010-12-05 | 2014-11-18 | Rf Micro Devices (Cayman Islands), Ltd. | Power amplifier system with a current bias signal path |
US8487691B1 (en) | 2012-06-12 | 2013-07-16 | Lsi Corporation | AC noise suppression from a bias signal in high voltage supply/low voltage device |
US9793860B2 (en) * | 2013-09-06 | 2017-10-17 | Qorvo Us, Inc. | RF amplification device with power protection during high supply voltage conditions |
US9647610B2 (en) | 2013-09-06 | 2017-05-09 | Qorvo Us, Inc. | RF amplification device with power protection during high supply voltage conditions |
US9632522B2 (en) * | 2015-04-15 | 2017-04-25 | Skyworks Solutions, Inc. | Current mirror bias circuit with voltage adjustment |
FR3059493B1 (fr) * | 2016-11-29 | 2019-11-22 | Stmicroelectronics Sa | Regulation d'un amplificateur rf |
JP2018152714A (ja) * | 2017-03-13 | 2018-09-27 | 株式会社村田製作所 | 電力増幅モジュール |
US10003326B1 (en) * | 2017-05-15 | 2018-06-19 | Shanghai Zhaoxin Semiconductor Co., Ltd. | Ring oscillator |
EP3496270B1 (en) * | 2017-12-05 | 2020-11-04 | Nxp B.V. | Bias circuit |
CN111049484B (zh) * | 2018-10-12 | 2023-03-28 | 株式会社村田制作所 | 功率放大电路 |
CN112332884B (zh) * | 2020-11-19 | 2021-06-01 | 华南理工大学 | 一种氮化镓基射频收发前端结构 |
US20240162864A1 (en) * | 2022-11-16 | 2024-05-16 | Psemi Corporation | Protection circuit for power amplifiers |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4663599A (en) * | 1985-05-21 | 1987-05-05 | General Electric Company | Integrated circuit amplifier module |
JP2680753B2 (ja) * | 1991-07-31 | 1997-11-19 | 三洋電機株式会社 | バッファアンプ |
DE4136605A1 (de) * | 1991-11-07 | 1993-05-13 | Philips Patentverwaltung | Verstaerker |
KR100357619B1 (ko) * | 1998-06-23 | 2003-01-15 | 삼성전자 주식회사 | 이동 통신단말기의 출력전력 제어장치 및 방법 |
US6784748B1 (en) | 2000-02-24 | 2004-08-31 | Skyworks Solutions, Inc. | Power amplifying system with supply and bias enhancements |
JP3474825B2 (ja) | 2000-03-13 | 2003-12-08 | 富士通カンタムデバイス株式会社 | 高周波電力増幅器および通信装置 |
JP3895532B2 (ja) * | 2000-09-11 | 2007-03-22 | 株式会社ルネサステクノロジ | 高周波電力増幅装置及び無線通信機 |
US6701138B2 (en) * | 2001-06-11 | 2004-03-02 | Rf Micro Devices, Inc. | Power amplifier control |
US6614309B1 (en) * | 2002-02-21 | 2003-09-02 | Ericsson Inc. | Dynamic bias controller for power amplifier circuits |
JP2003298360A (ja) * | 2002-03-29 | 2003-10-17 | Hitachi Ltd | 高周波増幅器 |
US6624702B1 (en) * | 2002-04-05 | 2003-09-23 | Rf Micro Devices, Inc. | Automatic Vcc control for optimum power amplifier efficiency |
JP2003338711A (ja) * | 2002-05-20 | 2003-11-28 | Alps Electric Co Ltd | 動作点の調整が可能な電力増幅器 |
US6831517B1 (en) | 2002-12-23 | 2004-12-14 | Intersil Americas, Inc. | Bias-management system and method for programmable RF power amplifier |
JP3829121B2 (ja) * | 2003-01-31 | 2006-10-04 | 株式会社東芝 | 電力増幅回路 |
US6917243B2 (en) * | 2003-06-27 | 2005-07-12 | Sige Semiconductor Inc. | Integrated power amplifier circuit |
-
2005
- 2005-10-05 DE DE602005023502T patent/DE602005023502D1/de active Active
- 2005-10-05 AT AT05788163T patent/ATE480904T1/de not_active IP Right Cessation
- 2005-10-05 EP EP05788163A patent/EP1800395B1/en active Active
- 2005-10-05 CN CN200580033933XA patent/CN101036288B/zh active Active
- 2005-10-05 JP JP2007535310A patent/JP5064224B2/ja not_active Expired - Fee Related
- 2005-10-05 US US11/576,812 patent/US7944306B2/en active Active
- 2005-10-05 WO PCT/IB2005/053269 patent/WO2006038189A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US7944306B2 (en) | 2011-05-17 |
CN101036288A (zh) | 2007-09-12 |
WO2006038189A1 (en) | 2006-04-13 |
CN101036288B (zh) | 2010-12-01 |
EP1800395A1 (en) | 2007-06-27 |
EP1800395B1 (en) | 2010-09-08 |
DE602005023502D1 (de) | 2010-10-21 |
US20090206933A1 (en) | 2009-08-20 |
JP2008516510A (ja) | 2008-05-15 |
ATE480904T1 (de) | 2010-09-15 |
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