JP5056862B2 - 半導体式センサの製造方法 - Google Patents

半導体式センサの製造方法 Download PDF

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Publication number
JP5056862B2
JP5056862B2 JP2010004134A JP2010004134A JP5056862B2 JP 5056862 B2 JP5056862 B2 JP 5056862B2 JP 2010004134 A JP2010004134 A JP 2010004134A JP 2010004134 A JP2010004134 A JP 2010004134A JP 5056862 B2 JP5056862 B2 JP 5056862B2
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Prior art keywords
semiconductor sensor
plating
electroless
manufacturing
sensor according
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Expired - Fee Related
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JP2010004134A
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JP2010135811A (ja
Inventor
宏明 田中
稲男 豊田
善文 渡辺
市治 近藤
恵次 真山
▲吉▼次 阿部
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Denso Corp
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Denso Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
    • B81B7/0012—Protection against reverse engineering, unauthorised use, use in unintended manner, wrong insertion or pin assignment
    • G—PHYSICS
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    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/05—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects
    • G01F1/34—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using mechanical effects by measuring pressure or differential pressure
    • G—PHYSICS
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    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
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Description

本発明は半導体式センサおよびその製造に好適な半導体装置のめっき方法に関する。
従来、測定媒体の圧力、流量等の物理量または測定媒体を構成する化学成分を検出する半導体式センサが、物理量もしくは化学センサとして用いられている。たとえば、従来の半導体式物理量センサ等のセンシングには、検出した電気信号の外部導出端子として、Ａｌを主成分とするパッド部が用いられている。しかしながら、近年の機械機器での高度制御のニーズから様々な部分での物理量測定が必要となり、同時に測定媒体自体によるＡｌ腐食は製品寿命に影響を及ぼすレベルに達している。
その状況下では、従来用いられてきた図４に示されるようなゲル等の対策構造では、Ａｌは腐食し、自動車に求められるような製品寿命を必ずしも満足するものではない。
Alを主成分とするパッドに関して、腐食性の強い圧力媒体の圧力を検出する圧力センサ構造として、特許第３１９８７７９号公報に示すように、圧力センサ素子をワイヤボンディングでターミナルピンに接続し、センサチップおよびワイヤターミナルピンをオイル中に入れ、耐食性のあるメタルダイヤフラムで封入した構造が提案されている。しかしながら、この構造では、メタルダイヤフラムやオイル、シールのためのＯリングといった部材が必要となり、組み立てが複雑になり、そして小型化できないといった難点がある。
また、水分・湿度に対しては、特開平１０−１５３５０８号公報に、貴金属の一種であるＰｄを用いたＴｉ/ＰｄによるＡｌパッド上の保護について開示されているが、腐食性溶液に対する具体的な開示はない。
さらに、特表２００１−５０９８９０号公報には、充填材による保護により腐食を防ぐ方法を取り、そのための配線引出し方法について提案されているが、代表的な充填材であるシリコンゲルについて、排ガス水溶液のレベルの酸化水においては、Alパッド等の保護には必ずしも十分ではないことを本発明者は実験にて確認している。
従来、半導体装置の製造に関して、たとえば圧力センサの電極形成はＡｌ配線にて行なわれ、Ａｌ配線を露出した状態でワイヤボンディング（例えばＡｕ）して接合している。この場合、使用環境においては、ＡｌとＡｕの電池作用によりＡｌが腐食することがある。このようなＡｌ腐食を防ぐ方法としては、Ａｌ配線上へ金属膜を形成する方法が考えられる。その形成方法としては、たとえば、図８に示すように半導体(Ｓi)ウェハ（Si基板）１全面にスタッパ（蒸着）により金属膜を形成し、レジストパターンニングにより不要な金属膜を除去する方法や、ウェハ全面にシード層を形成し、レジストパターンニングし、電気めっきにより電極を形成する方法が考えられる（２：ガラス基板）。しかし、これらの方法ではレジスト塗布工程、エッチング工程等の工程が増え、コストの上昇をもたらすことになる。このときの電極構造は図９のようになる。
また、無電解Ｎｉ／Ａｕめっきでは、Ａｌ配線上のみに金属膜を形成可能であるが、一般には、Ａｌ配線上に無電解Ｎｉ／Ａｕめっきにより電極を形成した後に、ダイアフラム形成およびガラス基板接合という工程が採用されている。従来の一般的な工程フローを図６に、また、電極構造を図５に示す。すなわち、図６に示されるように、回路形成した後にＡｌ配線を形成し、パッシベーション膜により回路面を保護している。このとき、Ａｌ配線上にはパッシベーションを開口させている。開口させたＡｌ配線上に無電解Ｎｉめっきにより、Ｎｉめっき膜を形成し、連続して無電解ＡｕめっきによりＮｉ上にＡｕを形成する。Ａｌ配線上にＮｉ/Ａｕめっき膜３を形成した状態で、ダイアフラム形成を行い、ガラス基板２とＳｉウェハ１を陽極接合する。その後、ウェハカットによりチップ状態にする。
このために、このような従来の方法においては、無電解Ｎｉ／Ａｕめっきで形成したＡｕが後工程の汚染源になりうる。これを防ぐためにダイアフラム形成、電極形成、ついでガラス基板接合とした場合、ウェハ裏面にＳｉが露出したり、不均一なめっき膜厚みが発生するという問題が生じる。めっきを均一に析出させるためには、図７に示すようにウェハ裏面への保護膜形成(レジスト膜等の形成)が必要となり、工程が複雑となる難点を有する。
特許第３１９８７７９号公報 特開平１０−１５３５０８号公報 特表２００１−５０９８９０号公報
本発明は、上記の課題を解決し、腐食性媒体に対する耐腐食性を向上させた半導体式センサを提供することを目的とし、特に半導体式センサの信号伝達部であるパッド・ワイヤ周辺部を対腐食性において著しく向上させることを目的とする。さらに、本発明は、このような半導体式センサの製造に最適な半導体装置のめっき方法を提供することを目的とする。特に、本発明は、均一なめっき膜厚み、半導体裏面へのめっき析出防止および後工程への汚染防止を低コストで可能にし得る半導体装置のめっき方法を提供する。
本発明は、上記の課題を解決するために、以下の発明を提供する。
（１）半導体基板に、腐食性媒体の物理量もしくは化学成分を検出する構造部および電気量変換素子を有し、かつ検出した電気信号の外部導出端子であるパッド部を有する半導体式センサにおいて、該パッド部のＡｌ電極上に接続用端子をダイレクト形成する際に、基板裏面を絶縁物で覆った状態で無電解めっき処理し、該絶縁物は製品の構成部品であるガラス基板であり、半導体基板には基板裏面に凹部が形成されたダイアフラムが設けられており、該ガラス基板は該凹部を封止する封止材と該基板裏面のコート材とを兼ねていることを特徴とする半導体式センサの製造方法。
（２）無電解めっき処理が無電解Ｎｉめっきである上記（１）記載の半導体式センサの製造方法。
（３）無電解ＮｉめっきによりＮｉを形成し、ついで無電解ＡｕめっきによりＡｕを形成する上記（１）記載の半導体式センサの製造方法。
（４）無電解Ｎｉおよび無電解Ａｕめっきを、ガラス基板接合後に行なう上記（３）記載の半導体式センサの製造方法。
（５）Ａｌ電極が純Ａｌ配線、Ａｌ−Ｓｉ配線、Ａｌ−Ｃｕ配線およびＡｌ−Ｓｉ−Ｃｕ配線のいずれかである上記（１）記載の半導体式センサの製造方法。
（６）無電解Ｎｉめっき液が、次亜リン酸ナトリウムもしくはホウ素化合物にもとづくめっき液である上記（２）〜（４）のいずれか記載の半導体式センサの製造方法。
（７）ガラス基板にある孔の内部に無電解めっき液が染み込まないようにガラス基板上を絶縁物で覆う上記（４）に記載の半導体式センサの製造方法。
（８）ガラス基板上に絶縁物を覆う方法として、粘着材もしくはワックスを介して覆う上記（７）に記載の半導体式センサの製造方法。
（９）粘着材を介して覆う材料が樹脂もしくはガラスである上記（８）に記載の半導体式センサの製造方法。
（１０）ガラス基板上に絶縁物を覆う方法として、ガラス外周部のみ粘着材もしくはワックスを介して覆うことによりガラス孔内部への粘着材・ワックスの染み込みを抑制した上記（８）に記載の半導体式センサの製造方法。
（１１）粘着材を介して覆う材料が樹脂もしくはガラスである上記（１０）に記載の半導体式センサの製造方法。
（１２）上記（１）〜（１１）のいずれか記載の製造方法を用いて作成された半導体式センサ。
本発明方法においては、ダイアフラム形成、ガラス基板接合、ついで電極形成とすることにより（電極形成すなわち無電解Ｎｉ／Ａｕめっきを最終工程とすることにより）、Ａｕの後工程への汚染を防止し、好適にはガラス基板は半導体基板裏面のコート材の役割を兼ね、半導体基板裏面への析出を防止するとともに、均一なめっきが可能となる。
本発明の半導体式センサにおける電極構造の１実施態様を示す。 (ａ)〜（ｆ）、は本発明の半導体式センサの作成のためのメッキ工程フローおよび組みつけ工程の概略を示す。 本発明の半導体装置のめっき方法について好適な態様を示す工程フローを示す。 従来の半導体式センサにおける電極構造の例を示す。 従来の一般的な電極構造の例を示す。 従来の一般的な工程フローの１例を示す。 従来の一般的な工程フローの１例を示す。 従来の一般的な工程フローの１例を示す。 従来の一般的な電極構造の例を示す。
本発明における半導体式センサは、Ｓｉウェハ等の半導体基板に、腐食性媒体の物理量もしくは化学成分を検出する構造部および電気量変換素子を有し、かつ検出した電気信号の外部導出端子であるパッド部を有し、そのパッド部は貴金属で保護されている。パッド部を形成する材料は好適にはAlである。そして、半導体基板の裏面にはガラス基板が配置されているのが通常である。本発明において、パッド部を保護するために用いられる貴金属としてはAu、PtもしくはPdの単膜もしくは複合膜が挙げられる。そして、このような貴金属は、シアンを含有しない液を用いてＮｉ/Ａｕ、Ｃｕ/Ａｕ、Ｎｉ/ＰｔもしくはＮｉ/Ｐd、特に好ましくはＮｉ/Ａｕ、をそれぞれ順次に無電解めっきして得るのが好適である。この無電解めっきは後述する本発明のめっき方法によるのが好適である。めっきの膜厚は特に制限されない。パッド部には検出した電気信号を外部導出するためにワイヤがボンディングされるが、このワイヤ材料としてはＡｕが最適である。本発明において、こうして形成されたパット部およびワイヤボンディング部は絶縁膜で被覆される。この絶縁膜の被覆、材質および膜厚等は常法によることができるが、たとえばゲル、プライマ＋ゲル、もしくはパリレン＋ゲルが好適であり、ゲルとしてはフッ素ゲル、シリコンゲルもしくはフロロシリコンゲルが挙げられる。
このように、本発明の半導体式センサの電極構造は、パット部上に該Niめっき膜を形成する無電解工程、該Niめっき膜上に貴金属皮膜を形成する無電解めっき工程、貴金属ワイヤをワイヤボンディングする工程、ならびにこれらのパット部およびワイヤボンディング部を絶縁膜で被覆する工程を含む工程により作成される。
本発明の半導体式センサは、たとえばＳｉ半導体基板内に、物理量検知する構造部及び電気量変換素子を持ち、さらにパッド部を有すし、得られる電気信号はワイヤで伝達される。そのパッド部には無電解にてメッキしたＮｉ及びＡｕの膜が存在し、その構造体全体を覆うようにゲル他の絶縁皮膜で覆われている。
本発明において、腐食性媒体の物理量を検出する半導体式センサの１例として圧力センサが挙げられる。特に、好適には自動車のエンジン排気環境下で排ガスの圧力を測定する圧力センサである。さらに、腐食性で、かつ高湿度である媒体の圧力を測定する圧力センサであることができる。さらに、これらの圧力センサは、常法にしたがって、半導体基板に薄いダイアフラム領域を有し、この領域に形成された拡散層によりピエゾ抵抗効果を有し、歪みが抵抗変化に変換されて圧力を伝達するように構成することができる。
具体的に圧力センサの１態様においてにおいては、図１に示されるように、パッド部は１．１μｍ厚さのＡｌの上に、Ａｕの析出を助けるために、無電解めっきによりＮｉを数μｍ積層させる。その上に0.2μｍ程度の厚さのＡｕを無電解メッキする。次にＡｕワイヤでワイヤボンディング（ＷＢ）する。このことで、腐食性溶液の接触の大部分は除去することができるが、Ｎｉ膜とＳｉＮ膜（チップ保護膜）間には隙間があり、その部分を絶縁皮膜（ゲル・パリレン・プライマ＋ゲル）で覆う。
この製造方法のメリットとしてはメッキ部分が完全に自己形成プロセスであるので、露光・エッチング等の半導体工程が不要であり、高価な設備であるアライナ・クリーンルーム・コータデベロッパーが不要である。半導体工程終了後の処理にて加工ができることが挙げられる。
上記のように、本発明は腐食性媒体の物理量検出及び化学成分検知を行うセンサにおける信号伝達部の腐食防止に関するもので、従来のものよりその製品寿命を延ばすことができる。具体的には、９０℃、ｐＨ１．７程度の強酸水溶液に浸漬した場合に、Al露出構造品に比べ約２倍の寿命である。
本発明の半導体式センサの好適な態様は次のとおりである。
１．半導体基板に、腐食性媒体の物理量もしくは化学成分を検出する構造部および電気量変換素子を有し、かつ検出した電気信号の外部導出端子であるパッド部を有する半導体式センサにおいて、該パッド部が貴金属で保護された半導体式センサ。
２．パッド部を形成する材料がAlである上記１に記載の半導体式センサ。
３．半導体基板の裏面にガラスが配置されている上記１もしくは２に記載の半導体式センサ。
４．貴金属がAu、PtもしくはPdの単膜もしくは複合膜である上記１〜３のいずれかに記載の半導体式センサ。
５．貴金属が、シアンを含有しない液を用いてＮｉ/Ａｕ、Ｃｕ/Ａｕ、Ｎｉ/ＰｔもしくはＮｉ/Ｐdを無電解めっきした上記１〜４のいずれかに記載の半導体式センサ。
６．パッド部にボンディングされ、検出した電気信号を外部導出するワイヤ材料がＡｕである上記１〜５のいずれかに記載の半導体式センサ。
７．パット部およびワイヤボンディング部が絶縁膜で覆われている上記６に記載の半導体式センサ。
８．絶縁膜がゲル、パリレン＋ゲル、もしくはプライマ＋ゲルである上記７に記載の半導体式センサ。
９．ゲルがフッ素ゲル、シリコンゲル、もしくはフロロシリコンゲルである上記８に記載の半導体式センサ。
１０．腐食性媒体の物理量を検出する半導体式センサが圧力センサである上記１〜９のいずれかに記載の半導体式センサ。
１１．半導体式センサが、自動車のエンジン排気環境下で排ガスの圧力を測定する圧力センサである上記６〜１０のいずれかに記載の半導体式センサ。
１２．半導体式センサが、腐食性で高湿度である媒体の圧力を測定する圧力センサである上記６〜１０のいずれかに記載の半導体式センサ。
１３．半導体式センサが、ダイアフラムを有し、ピエゾ抵抗効果を有する圧力センサである上記６〜１２のいずれかに記載の半導体式センサ。
つぎに、本発明の半導体装置のめっき方法について説明する。図２の(ａ)〜（ｆ）は、本発明の半導体式センサの作成のためのメッキ工程フローおよび組みつけ工程の概略を示す。
本発明方法においては、半導体基板（ウェハ）のＡｌ電極上に接続用端子をダイレクト形成する際に、基板裏面を絶縁物で覆った状態で無電解めっき処理する。この絶縁物としては、製品の構成部品であるガラス基板であるのが好適である。この場合、このガラス基板は基板裏面のコート材を兼ねることになる。
本発明における無電解めっき処理は無電解Ｎｉめっきであるのが好適である。さらに、好適な態様において、無電解ＮｉめっきによりＮｉを形成し、ついで無電解ＡｕめっきによりＡｕが形成される。これらの無電解Ｎｉおよび無電解Ａｕめっき自体は、常法によることができるが、本発明においては上述のようにガラス基板接合後に行なわれる。
本発明方法において、Ａｌ電極は、用途により純Ａｌ配線、Ａｌ−Ｓｉ配線、Ａｌ−Ｃｕ配線およびＡｌ−Ｓｉ−Ｃｕ配線のいずれかから選択されるのが一般的である。純Ａｌ配線としては、９９．９９もしくは９９．９９９％以上の高純度Ａｌからなる配線が一般的である。さらに、Ｓｉを含む場合には、Ｓｉを１％程度とするのが一般的である。無電解Ｎｉめっき液としては、たとえば次亜リン酸ナトリウムもしくはホウ素化合物にもとづくめっき液であるのが好ましい。
無電解Ｎｉ／Ａｕめっきは、Ａｌ配線上へ亜鉛酸塩処理によりＺｎ置換を行ない、無電解ＮｉめっきによりＮｉを析出させる。Ｎｉめっき液としては、たとえば次亜リン酸イオンを還元剤とするＮｉめっき液が好適である。そして、そのＮｉめっきの上に、無電解ＡｕめっきをＮｉの酸化防止の目的とワイヤボンディングとの接合性向上を兼ねて行なうのが好ましい。
さらに、本発明の好適な態様において、ガラス基板にある孔の内部に無電解めっき液が染み込まないようにガラス基板上を絶縁物で覆うことができる。このガラス基板上に絶縁物を覆う方法として、粘着材もしくはワックスを介して覆うことが挙げられ、粘着材を介して覆う材料は樹脂もしくはガラスであるのが好ましい。また、ガラス基板上に絶縁物を覆う方法として、ガラス外周部のみ粘着材もしくはワックスを介して覆うことによりガラス孔内部への粘着材・ワックスの染み込みを抑制することができる。本発明のめっき方法は上記のように半導体式センサの作製に最適である。
つぎに、本発明のめっき方法の好適な態様についてさらに図面とともに説明する。本発明の工程フローを図３に示す。図1において、回路形成した後にＡｌ配線を形成し、パッシベーション膜により回路面を保護している。ついで、ダイアフラム形成を行い、ガラス基板２とＳｉウェハ１を陽極接合する。そして、Ａｌ配線上に無電解Ｎｉめっきにより、Ｎｉめっき膜を形成し、連続して無電解ＡｕめっきによりＮｉ上にＡｕを形成する。このように、Ａｌ配線上にＮｉ/Ａｕめっき膜３を形成した状態でその後、ウェハカットによりチップ状態にされる。得られる最終的な電極構造自体は図５に示される従来のものと同一である。
本発明に係る半導体装置のめっき方法によれば、腐食性媒体に対する耐腐食性を向上させた半導体式センサを提供することができる。

Claims (11)

  1. 半導体基板に、腐食性媒体の物理量を検出する構造部および電気量変換素子を有し、かつ検出した電気信号の外部導出端子であるパッド部を有する半導体式センサにおいて、該パッド部のＡｌ電極上に接続用端子をダイレクト形成する際に、基板裏面を絶縁物で覆った状態で無電解めっき処理し、該絶縁物は製品の構成部品であるガラス基板であり、半導体基板には基板裏面に凹部が形成されたダイアフラムが設けられており、該ガラス基板は該凹部を封止する封止材と該基板裏面のコート材とを兼ねていることを特徴とする半導体式センサの製造方法。
  2. 無電解めっき処理が無電解Ｎｉめっきである請求項１記載の半導体式センサの製造方法。
  3. 無電解ＮｉめっきによりＮｉを形成し、ついで無電解ＡｕめっきによりＡｕを形成する請求項１記載の半導体式センサの製造方法。
  4. 無電解Ｎｉおよび無電解Ａｕめっきを、ガラス基板接合後に行なう請求項３記載の半導体式センサの製造方法。
  5. Ａｌ電極が純Ａｌ配線、Ａｌ−Ｓｉ配線、Ａｌ−Ｃｕ配線およびＡｌ−Ｓｉ−Ｃｕ配線のいずれかである請求項１記載の半導体式センサの製造方法。
  6. 無電解Ｎｉめっき液が、次亜リン酸ナトリウムもしくはホウ素化合物にもとづくめっき液である請求項２〜４のいずれか１項に記載の半導体式センサの製造方法。
  7. ガラス基板にある孔の内部に無電解めっき液が染み込まないようにガラス基板上を絶縁物で覆う請求項４に記載の半導体式センサの製造方法。
  8. ガラス基板上に絶縁物を覆う方法として、粘着材もしくはワックスを介して覆う請求項７に記載の半導体式センサの製造方法。
  9. 粘着材を介して覆う材料が樹脂もしくはガラスである請求項８に記載の半導体式センサの製造方法。
  10. ガラス基板上に絶縁物を覆う方法として、ガラス外周部のみ粘着材もしくはワックスを介して覆うことによりガラス孔内部への粘着材・ワックスの染み込みを抑制した請求項８に記載の半導体式センサの製造方法。
  11. 粘着材を介して覆う材料が樹脂もしくはガラスである請求項１０に記載の半導体式センサの製造方法。
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KR20050002850A (ko) 2005-01-10
KR100646820B1 (ko) 2006-11-23
JPWO2004059722A1 (ja) 2006-05-11
WO2004059722A1 (ja) 2004-07-15
CN1692484A (zh) 2005-11-02
CN100527372C (zh) 2009-08-12
EP1577936A4 (en) 2006-03-15
CN101145532B (zh) 2010-06-02
CN101145532A (zh) 2008-03-19

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