JP5052973B2 - 窒化物半導体発光素子アレイ - Google Patents
窒化物半導体発光素子アレイ Download PDFInfo
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- JP5052973B2 JP5052973B2 JP2007172598A JP2007172598A JP5052973B2 JP 5052973 B2 JP5052973 B2 JP 5052973B2 JP 2007172598 A JP2007172598 A JP 2007172598A JP 2007172598 A JP2007172598 A JP 2007172598A JP 5052973 B2 JP5052973 B2 JP 5052973B2
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- JP
- Japan
- Prior art keywords
- light emitting
- nitride semiconductor
- layer
- hexagonal pyramid
- semiconductor layer
- Prior art date
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- 150000004767 nitrides Chemical class 0.000 title claims description 83
- 239000004065 semiconductor Substances 0.000 title claims description 66
- 238000000034 method Methods 0.000 claims description 13
- 238000010030 laminating Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 description 19
- 239000013078 crystal Substances 0.000 description 13
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
30a、50a 側面
34、74、84 誘電体層
50b 角
70、80 窒化物発光素子アレイ
71 基板
72a、82a 第1導電型下部窒化物半導体層
72b、82b 第1導電型上部窒化物半導体層
75、85 活性層
76、86 第2導電型窒化物半導体層
77 光透過性導電層(透明電極層)
78 第1電極
79 第2電極
82a 第1導電型下部窒化物半導体層
84 誘電体層
82b 第1導電型上部窒化物半導体層
85 活性層
86 第2導電型窒化物半導体層
87 反射電極層
88 光透過性伝導層(光透過性導電層)
89 導電性支持構造
W 窓
x 底辺間の距離
Claims (6)
- 第1導電型下部窒化物半導体層上に形成され、複数の窓が配列された誘電体層と、
前記各窓によって露出された前記第1導電型下部窒化物半導体層領域から選択的に成長され前記誘電体層上に形成され、第1導電型上部窒化物半導体層、活性層及び第2導電型窒化物半導体層が順次に積層されて成る複数の六角ピラミッド型発光構造物と
を含み、
前記複数の窓は隣接した窓で成長される六角ピラミッド型発光構造物の側面が相互対向するように繰り返される正三角形の配列を有し、
相互隣接した六角ピラミッド型発光構造物の各底辺間の距離はその窓の中心間隔の0.3倍より小さく、
前記第2導電型窒化物半導体層上に形成された反射電極層と、前記六角ピラミッド型発光構造物の間の屈曲を埋めて平らな上面を有するように前記反射電極層上に形成され、一側の電極として作用する導電性支持構造とをさらに含むことを特徴とする窒化物半導体発光素子アレイ。 - 前記六角ピラミッド型発光構造物の側面は、[11−20]方向であることを特徴とする請求項1に記載の窒化物半導体発光素子アレイ。
- 前記複数の六角ピラミッド型発光構造物の側面積の和は、前記誘電体層の全体成長面積より大きいことを特徴とする請求項1または2に記載の窒化物半導体発光素子アレイ。
- 前記複数の六角ピラミッド型発光構造物は、隣接した全ての六角ピラミッド型発光構造物の底辺と相接するように形成されたことを特徴とする請求項1〜3のいずれか一項に記載の窒化物半導体発光素子アレイ。
- 前記第1導電型下部窒化物半導体層が形成された光透過性導電層と、前記光透過性導電層の一領域に形成された他側の電極とをさらに含むことを特徴とする請求項1〜4のいずれか一項に記載の窒化物半導体発光素子アレイ。
- 第1導電型下部窒化物半導体層上に形成され、複数の窓が四角形の配列として一定間隔を有する行と列に沿って配置された誘電体層と、
前記各窓によって露出された前記第1導電型下部窒化物半導体層領域から選択的に成長され前記誘電体層上に形成され、第1導電型上部窒化物半導体層、活性層及び第2導電型窒化物半導体層が順次に積層されて成る複数の六角ピラミッド型発光構造物と
を含み、
前記複数の六角ピラミッド型発光構造物は、前記行と列のうち一方向に沿って隣接した発光構造物の底辺が相互対向すると同時に、前記行と列のうち他の方向に沿っては隣接した発光構造物の底面の頂点が相互対向するように配列され、
前記第2導電型窒化物半導体層上に形成された反射電極層と、前記六角ピラミッド型発光構造物の間の屈曲を埋めて平らな上面を有するように前記反射電極層上に形成され、一側の電極として作用する導電性支持構造とをさらに含むことを特徴とする窒化物半導体発光素子アレイ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060060699A KR100755598B1 (ko) | 2006-06-30 | 2006-06-30 | 질화물 반도체 발광소자 어레이 |
KR10-2006-0060699 | 2006-06-30 |
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JP2012165110A Division JP2012238883A (ja) | 2006-06-30 | 2012-07-25 | 窒化物半導体発光素子アレイ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008016847A JP2008016847A (ja) | 2008-01-24 |
JP5052973B2 true JP5052973B2 (ja) | 2012-10-17 |
Family
ID=38736536
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JP2007172598A Active JP5052973B2 (ja) | 2006-06-30 | 2007-06-29 | 窒化物半導体発光素子アレイ |
JP2012165110A Pending JP2012238883A (ja) | 2006-06-30 | 2012-07-25 | 窒化物半導体発光素子アレイ |
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Country Status (3)
Country | Link |
---|---|
US (2) | US20080012030A1 (ja) |
JP (2) | JP5052973B2 (ja) |
KR (1) | KR100755598B1 (ja) |
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-
2006
- 2006-06-30 KR KR1020060060699A patent/KR100755598B1/ko active IP Right Grant
-
2007
- 2007-06-29 US US11/819,785 patent/US20080012030A1/en not_active Abandoned
- 2007-06-29 JP JP2007172598A patent/JP5052973B2/ja active Active
-
2011
- 2011-04-25 US US13/093,469 patent/US8587005B2/en not_active Expired - Fee Related
-
2012
- 2012-07-25 JP JP2012165110A patent/JP2012238883A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2012238883A (ja) | 2012-12-06 |
KR100755598B1 (ko) | 2007-09-06 |
US20110198625A1 (en) | 2011-08-18 |
US8587005B2 (en) | 2013-11-19 |
US20080012030A1 (en) | 2008-01-17 |
JP2008016847A (ja) | 2008-01-24 |
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