JP5023766B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP5023766B2 JP5023766B2 JP2007092413A JP2007092413A JP5023766B2 JP 5023766 B2 JP5023766 B2 JP 5023766B2 JP 2007092413 A JP2007092413 A JP 2007092413A JP 2007092413 A JP2007092413 A JP 2007092413A JP 5023766 B2 JP5023766 B2 JP 5023766B2
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- film
- ferroelectric
- manufacturing
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- electrode
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000000034 method Methods 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 175
- 239000003990 capacitor Substances 0.000 description 34
- 230000015654 memory Effects 0.000 description 33
- 230000010287 polarization Effects 0.000 description 21
- 239000003292 glue Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910021332 silicide Inorganic materials 0.000 description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 229910020684 PbZr Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000003963 antioxidant agent Substances 0.000 description 3
- 230000003078 antioxidant effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
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- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
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- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 1
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- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
Description
先ず、本発明の第1の実施形態について説明する。図1は、本発明の第1の実施形態に係る強誘電体キャパシタを示す断面図である。
次に、本発明の第2の実施形態に係るスタック型の強誘電体メモリ(半導体装置)の製造方法について説明する。図4A乃至図4Gは、本発明の第2の実施形態に係る強誘電体メモリの製造方法を工程順に示す断面図である。
2:下部電極
3:容量絶縁膜
4:上部電極
5:強誘電体キャパシタ
25:下部電極膜
26:強誘電体膜
27:上部電極膜
Claims (6)
- 第1の電極と、
前記第1の電極上に形成された容量絶縁膜と、
前記容量絶縁膜上に形成された第2の電極と、
を有し、
前記容量絶縁膜として、Bi1-YLaYFe1-XNiXO3(0<X≦0.15、かつ0.04≦Y≦0.21)で表される強誘電体膜が形成されていることを特徴とする半導体装置。 - 前記第1の電極と前記第2の電極との間のリーク電流は、電界強度が500kV/cmである場合、10-3A/cm2以下であることを特徴とする請求項1に記載の半導体装置。
- 基板の上方に第1の導電膜を形成する工程と、
前記第1の導電膜上に強誘電体膜を形成する工程と、
前記強誘電体膜上に第2の導電膜を形成する工程と、
を有し、
前記強誘電体膜として、Bi1-YLaYFe1-XNiXO3(0<X≦0.15、かつ0.04≦Y≦0.21)で表される膜を形成することを特徴とする半導体装置の製造方法。 - 前記強誘電体膜を形成する工程を600℃以下で行うことを特徴とする請求項3に記載の半導体装置の製造方法。
- 前記強誘電体膜を形成する工程は、
ゾル・ゲル液からなる塗布膜の形成と、前記塗布膜の仮焼成と、を繰り返す工程と、
前記仮焼成後の複数の塗布膜に対し、本焼成を行う工程と、
を有することを特徴とする請求項3又は4に記載の半導体装置の製造方法。 - 前記塗布膜の厚さを30nm以下とすることを特徴とする請求項5に記載の半導体装置の製造方法。
Priority Applications (1)
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JP2007092413A JP5023766B2 (ja) | 2007-03-30 | 2007-03-30 | 半導体装置及びその製造方法 |
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JP2007092413A JP5023766B2 (ja) | 2007-03-30 | 2007-03-30 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008251907A JP2008251907A (ja) | 2008-10-16 |
JP5023766B2 true JP5023766B2 (ja) | 2012-09-12 |
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JP2007092413A Expired - Fee Related JP5023766B2 (ja) | 2007-03-30 | 2007-03-30 | 半導体装置及びその製造方法 |
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JP (1) | JP5023766B2 (ja) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4519810B2 (ja) * | 2006-06-23 | 2010-08-04 | 富士フイルム株式会社 | 強誘電体素子とその製造方法、強誘電体メモリ、及びインクジェット式記録ヘッド |
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