JP5023461B2 - 圧電素子、液滴吐出ヘッド、液滴吐出装置、圧電素子の製造方法 - Google Patents
圧電素子、液滴吐出ヘッド、液滴吐出装置、圧電素子の製造方法 Download PDFInfo
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- 239000012212 insulator Substances 0.000 claims description 8
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 5
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 4
- 239000012071 phase Substances 0.000 description 24
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- 239000000758 substrate Substances 0.000 description 17
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- 238000004544 sputter deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
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- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910010421 TiNx Inorganic materials 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 2
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- 238000001027 hydrothermal synthesis Methods 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
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- 150000004767 nitrides Chemical class 0.000 description 2
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- UJMDDKJVWXXLIV-UHFFFAOYSA-N 1-(4-fluorophenyl)-4-(4-hydroxy-4-methylpiperidin-1-yl)butan-1-one Chemical compound C1CC(C)(O)CCN1CCCC(=O)C1=CC=C(F)C=C1 UJMDDKJVWXXLIV-UHFFFAOYSA-N 0.000 description 1
- 229910018921 CoO 3 Inorganic materials 0.000 description 1
- 101000652359 Homo sapiens Spermatogenesis-associated protein 2 Proteins 0.000 description 1
- 101000642464 Homo sapiens Spermatogenesis-associated protein 2-like protein Proteins 0.000 description 1
- 241000877463 Lanio Species 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 102100030254 Spermatogenesis-associated protein 2 Human genes 0.000 description 1
- 229910003114 SrVO Inorganic materials 0.000 description 1
- 229910004164 TaMo Inorganic materials 0.000 description 1
- -1 TaTi Inorganic materials 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- ROZSPJBPUVWBHW-UHFFFAOYSA-N [Ru]=O Chemical class [Ru]=O ROZSPJBPUVWBHW-UHFFFAOYSA-N 0.000 description 1
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- 238000010849 ion bombardment Methods 0.000 description 1
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- 230000008018 melting Effects 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14459—Matrix arrangement of the pressure chambers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14491—Electrical connection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/21—Line printing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Description
られている。
また、本発明は、堆積法により圧電体の剥離や亀裂が生じることなく、低温で均一な圧電体を形成可能な圧電素子の製造方法を提供することである。
本発明の圧電素子は、圧電体と、前記圧電体を挟持する2つの上部電極及び下部電極と、を有する圧電素子であって、
前記圧電体と前記上部電極との間に、前記圧電体の動作領域を除いて層間絶縁体が介在し、
前記圧電体の動作領域で前記圧電体上に前記上部電極が直接積層していることを特徴としている。
電気伝導性の結晶化層を形成して、当該結晶化層上に気相成長法又は液相成長法により堆積層を形成した後、当該結晶化層及び堆積層を描画して、結晶化層からなる下部電極及び堆積層からなる圧電体を順次形成する工程と、
前記下部電極及び前記圧電体上に層間絶縁層を形成した後、前記圧電体の動作領域と共に上部電極が配線と接続される電気的接続領域に位置する前記層間絶縁層に開口部を描画する工程と、
前記層間絶縁層上と共に当該層間絶縁層の開口部に露出した前記圧電体上に前記圧電体上に導電層を形成した後、これを描画して当該導電層からなる上部電極を形成する工程と、
を有することを特徴としている。
また、本発明は、堆積法により圧電体の剥離や亀裂が生じることなく、低温で均一な圧電体を形成可能な圧電素子の製造方法を提供することができる。
図1は、第1実施形態に係るインクジェット記録装置を示す概略構成図である。図2は、第1実施形態のインクジェット記録ユニットによる印字領域を示す図である。
−結晶化金属層−
・貴金属(例えばAu,Ag,Ru,Rh,Pd,Os,Ir,Pt等)
・貴金属酸化物(例えば、IrO2,RuO2等)、高融点金属(例えばα−Ta(bcc−Ta),bcc−V,bcc−Nb,bcc−Mo,bcc−W,hcp−Ti,hcp−Zr,hcp−Hf,TaMo,TaTi,TiAl,β−Ta,bcc−Ti,bcc−Zr,bcc−Ti,bcc−Zr等)、
・金属窒化物・金属珪化物・金属硼化物(例えばTa2N,TaN0.1,TaN0.8,TaN,Ta6N2.57,Ta4N,
TaB2,TaB,
TaSi2,Ta5Si,β−Ta5Si3,α−Ta5Si3,Ta2Si,Ta3Si,Ta4Si,Ta3.28Si0.72,,
VN,V2N,V6N2.7,VN0.2,VN0.35,,VB2,V1.54B50,
VSi2,V3Si,V5Si3,
Nb2N,NbN,NbN0.95,Nb4.62N2.14,Nb4N3.92,Nb4N3,
NbSi2,Nb3Si,,
MoN,Mo2N,
MoB4,Mo0.8B3,Mo2B,
MoSi2,Mo5Si3,
WN,W2N,
WB4,W2B5,
Wsi2,W5Si3,W3Si,,
TiN,Ti2N,TiN0.26,TiN0.30,
TiB2,
TiSi2,TiSi,Ti5Si4,Ti5Si3,
ZrN0.28,ZrN,
ZrB2,
ZrSi2,ZrSi,Zr5Si3,
HfB2,HfN0.40,HfN,
HfB,
HfSi2,Hf5Si4,Hf2Si,Hf5Si3,等)
BaRuO3,SrRuO3,(Ba,Sr)RuO3,BaPbO3,LaCuO3,LaNiO3,LaCoO3,LaTiO3,(La,Sr)CoO3,(La,Sr)VO3,(La,Sr)MnO3,LuNiO3,CaVO3,CaIrO3,CaRuO3,CaFeO3,SrVO3,SrCrO3,SrIrO3,SrFeO3,ReO3,等
図9は、参考例に係るインクジェット記録ヘッドにおける圧電体周辺を示す部分拡大平面図である。図10は、図9のA−A端面図である。図11は、図9のB−B端面図である。
12 用紙供給部
14 レジ調整部
16 記録ヘッド部
17 スターホイール
18 メンテナンス部
20 記録部
21 メンテナンス装置
22 排出部
30 インクジェット記録ユニット
32 インクジェット記録ヘッド
34 圧電素子
46 共通電極
48 圧電体
50 信号電極
52 基板
54 第1層間絶縁層
56 第2層間絶縁層
58 保護層
60 共通配線
62 信号配線
Claims (12)
- 圧電体と、前記圧電体を挟持する2つの上部電極及び下部電極と、を有する圧電素子であって、
前記圧電体と前記上部電極との間に、前記圧電体の動作領域を除いて層間絶縁体が介在し、
前記圧電体の動作領域で前記圧電体上に前記上部電極が直接積層し、
前記上部電極と電気的に接続される上部配線を有し、前記上部電極と前記上部配線との電気的接続領域に位置する前記層間絶縁体に開口部が設けられ、前記圧電体と前記上部電極とが前記圧電体の動作領域と共に当該開口部で電気的に接続していることを特徴とする圧電素子。 - 前記層間絶縁体は、前記圧電体の側壁を覆うように形成されることを特徴とする請求項1に記載の圧電素子。
- 前記層間絶縁体の比誘電率が圧電体に対して1/10以下であることを特徴とする請求項1に記載の圧電素子。
- 前記圧電体の動作領域を除く領域で、前記上部電極及び前記下部電極とそれぞれ電気的に接続される上部配線及び下部配線を独立して有することを特徴とする請求項1に記載の圧電素子。
- 前記上部配線と前記下部配線とは、互いに異なる階層に配設していることを特徴とする請求項1に記載の圧電素子。
- 前記下部電極が結晶化層を含んで構成されたことを特徴とする請求項1に記載の圧電素子。
- 前記結晶化層は、ルテニウム酸化物で構成されたことを特徴とする請求項6に記載の圧電素子。
- 前記圧電体は、気相成長法又は液相成長法により形成されたことを特徴とする請求項1に記載の圧電素子。
- 請求項1〜8のいずれか1項に記載の圧電素子を有する液滴吐出ヘッド。
- 前記圧電素子は、碁盤目状に配列されていることを特徴とする請求項9に記載の液滴吐出ヘッド
- 請求項9又は10に記載液滴吐出ヘッドを有する液滴吐出装置。
- 電気伝導性の結晶化層を形成して、当該結晶化層上に気相成長法又は液相成長法により堆積層を形成した後、当該結晶化層及び堆積層を描画して、結晶化層からなる下部電極及び堆積層からなる圧電体を順次形成する工程と、
前記下部電極及び前記圧電体上に層間絶縁層を形成した後、前記圧電体の動作領域と共に上部電極が配線と接続される電気的接続領域に位置する前記層間絶縁層に開口部を描画する工程と、
前記層間絶縁層上と共に当該層間絶縁層の開口部に露出した前記圧電体上に前記圧電体上に導電層を形成した後、これを描画して当該導電層からなる上部電極を形成する工程と、
を有することを特徴とする圧電素子の製造方法。
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JP2005280500A JP5023461B2 (ja) | 2005-09-27 | 2005-09-27 | 圧電素子、液滴吐出ヘッド、液滴吐出装置、圧電素子の製造方法 |
US11/404,648 US7658475B2 (en) | 2005-09-27 | 2006-04-14 | Piezoelectric element, droplet-ejecting head, droplet-ejecting apparatus, and method of producing a piezoelectric element |
US12/627,028 US20100071180A1 (en) | 2005-09-27 | 2009-11-30 | Piezoelectric element, droplet-ejecting head, droplet-ejecting apparatus, and method of producing a piezoelectric element |
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US20080272421A1 (en) * | 2007-05-02 | 2008-11-06 | Micron Technology, Inc. | Methods, constructions, and devices including tantalum oxide layers |
ATE517752T1 (de) * | 2007-05-30 | 2011-08-15 | Oce Tech Bv | Piezoelektrischer aktuator und herstellungsverfahren dafür |
JP5760475B2 (ja) * | 2011-02-10 | 2015-08-12 | 株式会社リコー | インクジェットヘッド |
JP2012182187A (ja) * | 2011-02-28 | 2012-09-20 | Panasonic Corp | 発電デバイス |
JP6492648B2 (ja) * | 2014-12-26 | 2019-04-03 | ブラザー工業株式会社 | 圧電アクチュエータ、液体吐出装置、及び、圧電アクチュエータの製造方法 |
JP6455167B2 (ja) * | 2015-01-16 | 2019-01-23 | ブラザー工業株式会社 | 液体吐出装置 |
JP6558191B2 (ja) * | 2015-10-01 | 2019-08-14 | ブラザー工業株式会社 | 液体吐出装置 |
JP6790366B2 (ja) * | 2016-01-29 | 2020-11-25 | ブラザー工業株式会社 | 液体吐出装置、及び、液体吐出装置の製造方法 |
JP6977131B2 (ja) * | 2016-04-20 | 2021-12-08 | 東芝テック株式会社 | インクジェットヘッド及びインクジェット記録装置 |
JP2017193108A (ja) * | 2016-04-20 | 2017-10-26 | 東芝テック株式会社 | インクジェットヘッド及びインクジェット記録装置 |
JP6926625B2 (ja) * | 2016-06-29 | 2021-08-25 | 株式会社リコー | 圧電アクチュエータ、光偏向器及び画像投影装置 |
JP6907493B2 (ja) * | 2016-09-28 | 2021-07-21 | ブラザー工業株式会社 | アクチュエータ装置、配線部材の接続構造、液体吐出装置、及び、アクチュエータ装置の製造方法 |
JP7302722B2 (ja) * | 2020-12-22 | 2023-07-04 | ブラザー工業株式会社 | 圧電アクチュエータ、液体吐出装置、及び、圧電アクチュエータの製造方法 |
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FR2770932B1 (fr) * | 1997-11-07 | 2001-11-16 | Thomson Csf | Procede de fabrication d'une sonde acoustique |
JPH11157070A (ja) * | 1997-11-26 | 1999-06-15 | Seiko Epson Corp | インクジェット式記録ヘッド |
US6154239A (en) * | 1998-08-31 | 2000-11-28 | Eastman Kodak Company | Ceramic ink jet printing element |
US6239536B1 (en) * | 1998-09-08 | 2001-05-29 | Tfr Technologies, Inc. | Encapsulated thin-film resonator and fabrication method |
US6407481B1 (en) * | 1999-03-05 | 2002-06-18 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive device having convexly curved diaphragm |
JP2003046160A (ja) * | 2001-04-26 | 2003-02-14 | Matsushita Electric Ind Co Ltd | 圧電素子,アクチュエータ及びインクジェットヘッド |
US6903491B2 (en) * | 2001-04-26 | 2005-06-07 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric element, actuator, and inkjet head |
JP2003154646A (ja) | 2001-11-21 | 2003-05-27 | Matsushita Electric Ind Co Ltd | インクジェットヘッド |
JP3812658B2 (ja) * | 2002-03-15 | 2006-08-23 | セイコーエプソン株式会社 | インクジェット式記録ヘッド及びその製造方法並びにインクジェット式記録装置 |
JP3772977B2 (ja) * | 2002-07-08 | 2006-05-10 | セイコーエプソン株式会社 | 液体噴射ヘッド及び液体噴射装置 |
JP2005103771A (ja) * | 2003-09-26 | 2005-04-21 | Fuji Photo Film Co Ltd | インクジェットヘッドとその製造方法及びインクジェット記録装置 |
US7090323B2 (en) * | 2004-02-19 | 2006-08-15 | Fuji Photo Film Co., Ltd. | Liquid ejection head and image recording apparatus |
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US7658475B2 (en) | 2010-02-09 |
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JP2007095824A (ja) | 2007-04-12 |
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