JP5018539B2 - 撮像装置 - Google Patents
撮像装置 Download PDFInfo
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- JP5018539B2 JP5018539B2 JP2008035799A JP2008035799A JP5018539B2 JP 5018539 B2 JP5018539 B2 JP 5018539B2 JP 2008035799 A JP2008035799 A JP 2008035799A JP 2008035799 A JP2008035799 A JP 2008035799A JP 5018539 B2 JP5018539 B2 JP 5018539B2
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- 238000003384 imaging method Methods 0.000 title claims description 40
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 description 28
- 238000010586 diagram Methods 0.000 description 13
- 230000003321 amplification Effects 0.000 description 12
- 238000003199 nucleic acid amplification method Methods 0.000 description 12
- 238000003860 storage Methods 0.000 description 10
- 230000000875 corresponding effect Effects 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/625—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of smear
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/709—Circuitry for control of the power supply
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/767—Horizontal readout lines, multiplexers or registers
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
(第1の実施形態)
図1は第1の実施形態に係る撮像装置101を示すブロック図である。撮像装置101は、M×N個の画素P(x,y)と、垂直信号線VLINE(y)と、定電流源PW(y)と、カラムアンプCAMP(y)と、垂直走査回路102と、水平出力回路103と、マイクロ定電圧源CVS(y)とで構成される。ここで、xは1〜Mの自然数で行番号を表し、yは1〜Nの自然数で列番号を表す。M×N個の画素P(x,y)は、撮像装置101の撮像部を構成し、M行N列のマトリクス状に配置されている。
103・・・水平出力回路
105・・・仮想接地線
106・・・VR線 201・・・画素マトリクス
203,204・・・外部GND 205・・・Vref線
206・・・VSS線
P(1,1)〜P(M,N)・・・画素
VLINE(1)〜VLINE(N)・・・垂直信号線
CAMP(1)〜CAMP(N)・・・カラムアンプ
PW(1)〜PW(N)・・・定電流源
CVS(1)〜CVS(N)・・・定電流源
PGND(1)〜PGND(N)・・・画素GND
Claims (5)
- 2次元状に配置され、光を電気信号に変換する光電変換部を有する画素と、
列方向に配置された前記画素と列方向に接続され、前記画素から読み出される電気信号を受け取る複数の垂直信号線と、
前記垂直信号線毎に設けられた第1の定電流源と、
前記垂直信号線に読み出された前記電気信号を増幅する第2の定電流源を有するカラムアンプと、
前記垂直信号線毎に設けられ、前記第1の定電流源の第1の接点および前記カラムアンプに内蔵される前記第2の定電流源の第2の接点に接続される定電圧源と
を設けたことを特徴とする撮像装置。 - 請求項1記載の撮像装置において、
前記2次元状に配置された画素の全列に亘って行方向に配置され、前記第1の定電流源の前記第1の接点と、前記カラムアンプに内蔵される前記第2の定電流源の前記第2の接点と、列方向の画素の画素接地線とが、前記列毎に接続される仮想接地線と、
前記2次元状に配置された画素の全列に亘って行方向に配置され、前記定電圧源に所定電位を与えるリファレンス電圧線と、
前記2次元状に配置された画素の全列に亘って行方向に配置され、前記定電圧源に電源を供給する電源線と
を更に設け、
前記定電圧源は、前記電源線と、前記仮想接地線と、前記リファレンス電圧線とが、前記列毎に接続される
ことを特徴とする撮像装置。 - 請求項1または2記載の撮像装置において、
前記定電圧源は、差動型ボルテージフォロワ回路であることを特徴とする撮像装置。 - 請求項3記載の撮像装置において、
前記差動型ボルテージフォロワ回路の出力負荷電流源は、前記第1の定電流源であることを特徴とする撮像装置。 - 請求項3または4に記載の撮像装置において、
前記差動型ボルテージフォロワ回路の出力負荷電流源は、前記カラムアンプに内蔵される前記第2の定電流源であることを特徴とする撮像装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008035799A JP5018539B2 (ja) | 2008-02-18 | 2008-02-18 | 撮像装置 |
PCT/JP2009/000178 WO2009104351A1 (ja) | 2008-02-18 | 2009-01-20 | 撮像装置 |
US12/839,123 US8269870B2 (en) | 2008-02-18 | 2010-07-19 | Imaging device for suppressing variations in electric potentials |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008035799A JP5018539B2 (ja) | 2008-02-18 | 2008-02-18 | 撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009194816A JP2009194816A (ja) | 2009-08-27 |
JP5018539B2 true JP5018539B2 (ja) | 2012-09-05 |
Family
ID=40985240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008035799A Expired - Fee Related JP5018539B2 (ja) | 2008-02-18 | 2008-02-18 | 撮像装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8269870B2 (ja) |
JP (1) | JP5018539B2 (ja) |
WO (1) | WO2009104351A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8542066B2 (en) * | 2012-02-09 | 2013-09-24 | Analog Devices, Inc. | Apparatus and methods for reducing output noise of a signal channel |
EP2961310B1 (en) * | 2013-02-28 | 2021-02-17 | DePuy Synthes Products, Inc. | Videostroboscopy of vocal chords with cmos sensors |
JP6685254B2 (ja) * | 2017-03-01 | 2020-04-22 | キヤノン株式会社 | 光電変換装置、センサユニットおよび画像形成装置 |
Family Cites Families (48)
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US6486503B1 (en) * | 1994-01-28 | 2002-11-26 | California Institute Of Technology | Active pixel sensor array with electronic shuttering |
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US6166768A (en) * | 1994-01-28 | 2000-12-26 | California Institute Of Technology | Active pixel sensor array with simple floating gate pixels |
US5949483A (en) * | 1994-01-28 | 1999-09-07 | California Institute Of Technology | Active pixel sensor array with multiresolution readout |
US6456326B2 (en) | 1994-01-28 | 2002-09-24 | California Institute Of Technology | Single chip camera device having double sampling operation |
US6021172A (en) * | 1994-01-28 | 2000-02-01 | California Institute Of Technology | Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter |
US5793322A (en) * | 1995-11-07 | 1998-08-11 | California Institute Of Technology | Successive approximation analog-to-digital converter using balanced charge integrating amplifiers |
AU1074797A (en) * | 1995-11-07 | 1997-06-05 | California Institute Of Technology | Capacitively coupled successive approximation ultra low power analog-to-digital converter |
JP3962431B2 (ja) * | 1995-11-07 | 2007-08-22 | カリフォルニア インスティチュート オブ テクノロジー | 高ダイナミックレンジのリニア出力を有する画像センサ |
US5990506A (en) * | 1996-03-20 | 1999-11-23 | California Institute Of Technology | Active pixel sensors with substantially planarized color filtering elements |
US5929800A (en) * | 1996-08-05 | 1999-07-27 | California Institute Of Technology | Charge integration successive approximation analog-to-digital converter for focal plane applications using a single amplifier |
US5886659A (en) * | 1996-08-21 | 1999-03-23 | California Institute Of Technology | On-focal-plane analog-to-digital conversion for current-mode imaging devices |
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JP4192305B2 (ja) | 1998-08-27 | 2008-12-10 | 株式会社ニコン | 固体撮像素子 |
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-
2008
- 2008-02-18 JP JP2008035799A patent/JP5018539B2/ja not_active Expired - Fee Related
-
2009
- 2009-01-20 WO PCT/JP2009/000178 patent/WO2009104351A1/ja active Application Filing
-
2010
- 2010-07-19 US US12/839,123 patent/US8269870B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2009104351A1 (ja) | 2009-08-27 |
US20100283880A1 (en) | 2010-11-11 |
JP2009194816A (ja) | 2009-08-27 |
US8269870B2 (en) | 2012-09-18 |
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