JP5005603B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP5005603B2 JP5005603B2 JP2008096800A JP2008096800A JP5005603B2 JP 5005603 B2 JP5005603 B2 JP 5005603B2 JP 2008096800 A JP2008096800 A JP 2008096800A JP 2008096800 A JP2008096800 A JP 2008096800A JP 5005603 B2 JP5005603 B2 JP 5005603B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- frame
- tape
- wiring layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 114
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000011347 resin Substances 0.000 claims description 37
- 229920005989 resin Polymers 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 34
- 239000010949 copper Substances 0.000 claims description 29
- 238000007789 sealing Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- 239000010408 film Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- 238000004380 ashing Methods 0.000 claims description 3
- 238000000748 compression moulding Methods 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 131
- 229910000679 solder Inorganic materials 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000010931 gold Substances 0.000 description 10
- 229920001721 polyimide Polymers 0.000 description 10
- 239000009719 polyimide resin Substances 0.000 description 9
- 239000004020 conductor Substances 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011162 core material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000003351 stiffener Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/20—Structure, shape, material or disposition of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/20—Structure, shape, material or disposition of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01011—Sodium [Na]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Description
20…半導体チップ(半導体素子)、
21…電極端子(バンプ)、
30…積層配線層(パッケージ)、
31,33,35…絶縁層、
32,34,36…配線層(再配線層)、
37…ソルダレジスト層(絶縁層)、
38…外部接続端子、
40…フレーム、
41…封止樹脂、
50…テープ(片面に粘着剤が塗布された基材)、
51…アライメントパターンの付いた基材、
60…インターポーザ、
AP…アライメントパターン。
Claims (7)
- 電極端子が形成された半導体素子と、
前記半導体素子の電極端子が形成されている側に一体化された態様で設けられた積層配線層と、
前記積層配線層上で前記半導体素子を囲むように配置され、剛性を有した材料から形成されたフレームと、
前記半導体素子の側面と前記フレームの上面及び内側側面とを覆い、前記半導体素子の電極端子が形成されている側の面及びその反対側の面を露出させて形成された封止樹脂とを備え、
前記積層配線層は、前記半導体素子の電極端子が形成されている側の面に直接形成された絶縁層と、該絶縁層に設けられた開口部を充填して前記半導体素子の電極端子に直接接続された配線層と、前記半導体素子が搭載されている側と反対側の面であって前記半導体素子の搭載エリアに対応する面及びその外側エリアに対応する面にそれぞれ設けられ、前記配線層を介して前記半導体素子の電極端子と電気的に接続された外部接続端子接合用パッド部とを有することを特徴とする半導体装置。 - 前記外部接続端子接合用パッド部が露出するように保護膜が形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記フレームは、鉄或いはその合金、又は銅或いはその合金からなることを特徴とする請求項1又は2に記載の半導体装置。
- 剛性を有した材料からなり、かつ所要の大きさの開口部が形成された板状のフレームをテープ状の基材に貼り付けたものを用意する工程と、
前記テープ状の基材上の、前記フレーム内の開口部に対応する部分に、半導体素子をフェースダウン実装の態様で搭載する工程と、
前記半導体素子の側面と前記フレームの上面及び内側側面とを覆い、かつ、前記半導体素子の電極端子が形成されている側の面及びその反対側の面を露出させるように封止樹脂で封止する工程と、
前記テープ状の基材を除去する工程と、
前記テープ状の基材に接触していた、前記半導体素子の電極端子が形成されている側の面をアッシングし、前記半導体素子の電極端子が形成されている側の面を露出させる工程と、
前記半導体素子の電極端子が形成されている側の面に直接絶縁層を形成する工程と、
前記絶縁層に開口部を形成する工程と、
前記開口部を充填して前記半導体素子の電極端子に直接接続される配線層を形成する工程と、
前記配線層を介して前記半導体素子の電極端子と電気的に接続されるように、前記半導体素子が搭載されている側と反対側の面であって前記半導体素子の搭載エリアに対応する面及びその外側エリアに対応する面にそれぞれ外部接続端子接合用パッド部を形成する工程と、
前記外部接続端子接合用パッド部が露出するように保護膜を形成する工程とを含むことを特徴とする半導体装置の製造方法。 - 前記開口部が形成された板状のフレームをテープ状の基材に貼り付けたものを用意する工程において、前記開口部がフレーム毎に複数個配列されたものを前記テープ状の基材に貼り付けたものを用意し、
前記半導体素子を搭載する工程において、前記テープ状の基材上の、前記フレーム内の複数個の開口部に対応する部分にそれぞれ半導体素子を搭載し、
前記保護膜を形成する工程の後に、
前記外部接続端子接合用パッド部に外部接続端子を接合する工程と、
1個の半導体素子及びこれに対応するフレームを含むデバイスの単位に分割する工程とを含むことを特徴とする請求項4に記載の半導体素子の製造方法。 - 前記開口部がフレーム毎に複数個配列されたものを前記テープ状の基材に貼り付けたものを用意する工程において、前記テープ状の基材の、前記フレームが貼り付けられている側と反対側の面に、あらかじめ薄膜配線プロセスを用いてアライメントパターンが形成された基材を配置し、
前記フレーム内の複数個の開口部に対応する部分にそれぞれ半導体素子を搭載する工程において、前記アライメントパターンを読み取りそのパターン位置に合わせて当該半導体素子を搭載し、
前記テープ状の基材を除去する工程において、前記アライメントパターンが形成された基材も合わせて除去することを特徴とする請求項5に記載の半導体素子の製造方法。 - 前記封止樹脂で封止する工程において、モールディング用の金型を用いて熱とプレスによる圧縮成形を行うことにより樹脂封止を行うことを特徴とする請求項4に記載の半導体素子の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008096800A JP5005603B2 (ja) | 2008-04-03 | 2008-04-03 | 半導体装置及びその製造方法 |
US12/402,862 US7944039B2 (en) | 2008-04-03 | 2009-03-12 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008096800A JP5005603B2 (ja) | 2008-04-03 | 2008-04-03 | 半導体装置及びその製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009252859A JP2009252859A (ja) | 2009-10-29 |
JP2009252859A5 JP2009252859A5 (ja) | 2011-05-12 |
JP5005603B2 true JP5005603B2 (ja) | 2012-08-22 |
Family
ID=41132496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008096800A Active JP5005603B2 (ja) | 2008-04-03 | 2008-04-03 | 半導体装置及びその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7944039B2 (ja) |
JP (1) | JP5005603B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160011602A (ko) * | 2014-07-22 | 2016-02-01 | 아피쿠 야마다 가부시키가이샤 | 성형 금형, 성형 장치, 성형품의 제조 방법 및 수지 몰드 방법 |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6905914B1 (en) * | 2002-11-08 | 2005-06-14 | Amkor Technology, Inc. | Wafer level package and fabrication method |
US8373281B2 (en) * | 2008-07-31 | 2013-02-12 | Sanyo Electric Co., Ltd. | Semiconductor module and portable apparatus provided with semiconductor module |
JP4833307B2 (ja) * | 2009-02-24 | 2011-12-07 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 半導体モジュール、端子板、端子板の製造方法および半導体モジュールの製造方法 |
JP5543754B2 (ja) * | 2009-11-04 | 2014-07-09 | 新光電気工業株式会社 | 半導体パッケージ及びその製造方法 |
JP5589598B2 (ja) * | 2010-06-22 | 2014-09-17 | 富士通株式会社 | 半導体装置の製造方法 |
US8502372B2 (en) | 2010-08-26 | 2013-08-06 | Lsi Corporation | Low-cost 3D face-to-face out assembly |
JPWO2012029579A1 (ja) * | 2010-08-30 | 2013-10-28 | 住友ベークライト株式会社 | 半導体パッケージおよび半導体装置 |
JPWO2012029549A1 (ja) * | 2010-08-30 | 2013-10-28 | 住友ベークライト株式会社 | 半導体パッケージおよび半導体装置 |
JP5736714B2 (ja) * | 2010-10-14 | 2015-06-17 | 富士通株式会社 | 半導体装置及びその製造方法 |
US8674235B2 (en) * | 2011-06-06 | 2014-03-18 | Intel Corporation | Microelectronic substrate for alternate package functionality |
US8476111B2 (en) * | 2011-06-16 | 2013-07-02 | Stats Chippac Ltd. | Integrated circuit packaging system with intra substrate die and method of manufacture thereof |
JP6048050B2 (ja) * | 2011-10-13 | 2016-12-21 | 住友ベークライト株式会社 | 半導体パッケージおよび半導体装置 |
KR20130054769A (ko) * | 2011-11-17 | 2013-05-27 | 삼성전기주식회사 | 반도체 패키지 및 이를 포함하는 반도체 패키지 모듈 |
JP5895467B2 (ja) * | 2011-11-18 | 2016-03-30 | 富士通株式会社 | 電子装置及びその製造方法 |
US9224674B2 (en) | 2011-12-15 | 2015-12-29 | Intel Corporation | Packaged semiconductor die with bumpless die-package interface for bumpless build-up layer (BBUL) packages |
US8716859B2 (en) * | 2012-01-10 | 2014-05-06 | Intel Mobile Communications GmbH | Enhanced flip chip package |
KR101384343B1 (ko) * | 2012-05-24 | 2014-04-14 | 에스티에스반도체통신 주식회사 | 칩 패드가 없는 반도체 패키지 제조방법 |
US9087847B2 (en) | 2012-08-14 | 2015-07-21 | Bridge Semiconductor Corporation | Thermally enhanced interconnect substrate with embedded semiconductor device and built-in stopper and method of making the same |
US8901435B2 (en) | 2012-08-14 | 2014-12-02 | Bridge Semiconductor Corporation | Hybrid wiring board with built-in stopper, interposer and build-up circuitry |
US9282642B2 (en) * | 2012-09-28 | 2016-03-08 | KYOCERA Circuit Solutions, Inc. | Wiring board |
TWI473552B (zh) * | 2012-11-21 | 2015-02-11 | Unimicron Technology Corp | 具有元件設置區之基板結構及其製程 |
US9520350B2 (en) * | 2013-03-13 | 2016-12-13 | Intel Corporation | Bumpless build-up layer (BBUL) semiconductor package with ultra-thin dielectric layer |
JP2014236187A (ja) * | 2013-06-05 | 2014-12-15 | イビデン株式会社 | 配線板及びその製造方法 |
KR101863462B1 (ko) * | 2013-08-21 | 2018-05-31 | 인텔 코포레이션 | 범프리스 빌드업 층을 위한 범프리스 다이 패키지 인터페이스 |
CN103887291B (zh) * | 2014-04-02 | 2017-01-04 | 华进半导体封装先导技术研发中心有限公司 | 三维扇出型PoP封装结构及制造工艺 |
TWI566339B (zh) | 2014-11-11 | 2017-01-11 | 矽品精密工業股份有限公司 | 電子封裝件及其製法 |
US9806063B2 (en) * | 2015-04-29 | 2017-10-31 | Qualcomm Incorporated | Reinforced wafer level package comprising a core layer for reducing stress in a solder joint and improving solder joint reliability |
JP6885331B2 (ja) * | 2015-07-23 | 2021-06-16 | ソニーグループ株式会社 | 半導体装置およびその製造方法、並びに電子機器 |
KR101952862B1 (ko) * | 2016-08-30 | 2019-02-27 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
US10340198B2 (en) * | 2017-02-13 | 2019-07-02 | Mediatek Inc. | Semiconductor package with embedded supporter and method for fabricating the same |
US9899305B1 (en) * | 2017-04-28 | 2018-02-20 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor package structure |
CN107256848A (zh) * | 2017-05-25 | 2017-10-17 | 日月光封装测试(上海)有限公司 | 半导体封装件及其制造方法 |
CN110651007A (zh) * | 2017-06-09 | 2020-01-03 | 长濑化成株式会社 | 环氧树脂组合物、电子部件安装结构体及其制造方法 |
JP6991014B2 (ja) * | 2017-08-29 | 2022-01-12 | キオクシア株式会社 | 半導体装置 |
JP6943358B2 (ja) * | 2017-10-20 | 2021-09-29 | ホアウェイ・テクノロジーズ・カンパニー・リミテッド | チップパッケージ構造及びチップパッケージ方法 |
JP6581641B2 (ja) | 2017-11-17 | 2019-09-25 | 株式会社東芝 | 半導体装置の製造方法 |
JP7002321B2 (ja) * | 2017-12-22 | 2022-01-20 | 京セラ株式会社 | 配線基板 |
JP7157630B2 (ja) * | 2018-11-05 | 2022-10-20 | ローム株式会社 | 半導体素子および半導体装置 |
WO2023149133A1 (ja) * | 2022-02-02 | 2023-08-10 | 株式会社レゾナック | 半導体パッケージ及び半導体装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3400877B2 (ja) * | 1994-12-14 | 2003-04-28 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
US6317333B1 (en) * | 1997-08-28 | 2001-11-13 | Mitsubishi Denki Kabushiki Kaisha | Package construction of semiconductor device |
JPH11260973A (ja) * | 1998-03-09 | 1999-09-24 | Shinko Electric Ind Co Ltd | 半導体チップの実装構造 |
JPH11265960A (ja) * | 1998-03-18 | 1999-09-28 | Hitachi Chem Co Ltd | 金属製補強材付き半導体装置 |
JP3792445B2 (ja) * | 1999-03-30 | 2006-07-05 | 日本特殊陶業株式会社 | コンデンサ付属配線基板 |
JP2002016173A (ja) * | 2000-06-30 | 2002-01-18 | Mitsubishi Electric Corp | 半導体装置 |
JP4270769B2 (ja) * | 2000-12-15 | 2009-06-03 | イビデン株式会社 | 多層プリント配線板の製造方法 |
JP3773896B2 (ja) * | 2002-02-15 | 2006-05-10 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
US6879034B1 (en) * | 2003-05-01 | 2005-04-12 | Amkor Technology, Inc. | Semiconductor package including low temperature co-fired ceramic substrate |
JP2006203079A (ja) * | 2005-01-21 | 2006-08-03 | Sharp Corp | 半導体装置および半導体装置の製造方法 |
-
2008
- 2008-04-03 JP JP2008096800A patent/JP5005603B2/ja active Active
-
2009
- 2009-03-12 US US12/402,862 patent/US7944039B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160011602A (ko) * | 2014-07-22 | 2016-02-01 | 아피쿠 야마다 가부시키가이샤 | 성형 금형, 성형 장치, 성형품의 제조 방법 및 수지 몰드 방법 |
KR102455987B1 (ko) | 2014-07-22 | 2022-10-18 | 아피쿠 야마다 가부시키가이샤 | 성형 금형, 성형 장치, 성형품의 제조 방법 및 수지 몰드 방법 |
Also Published As
Publication number | Publication date |
---|---|
US20090250803A1 (en) | 2009-10-08 |
US7944039B2 (en) | 2011-05-17 |
JP2009252859A (ja) | 2009-10-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5005603B2 (ja) | 半導体装置及びその製造方法 | |
JP5460388B2 (ja) | 半導体装置及びその製造方法 | |
JP5249173B2 (ja) | 半導体素子実装配線基板及びその製造方法 | |
JP5207896B2 (ja) | 半導体装置及びその製造方法 | |
JP5649490B2 (ja) | 配線基板及びその製造方法 | |
US8174109B2 (en) | Electronic device and method of manufacturing same | |
JP5026400B2 (ja) | 配線基板及びその製造方法 | |
US7968992B2 (en) | Multi-chip package structure and method of fabricating the same | |
US8901725B2 (en) | Wiring board and method of manufacturing the same, and semiconductor device and method of manufacturing the same | |
US20090135574A1 (en) | Wiring board, semiconductor device having wiring board, and method of manufacturing wiring board | |
JP5406572B2 (ja) | 電子部品内蔵配線基板及びその製造方法 | |
JP2010147152A (ja) | 配線基板及びその製造方法 | |
WO2002015266A2 (en) | Direct build-up layer on an encapsulated die package | |
US20230033515A1 (en) | Semiconductor device package and method for manufacturing the same | |
US8176628B1 (en) | Protruding post substrate package structure and method | |
JP5147755B2 (ja) | 半導体装置及びその製造方法 | |
US9462704B1 (en) | Extended landing pad substrate package structure and method | |
JP5442236B2 (ja) | 電子部品内蔵配線基板の製造方法、電子部品内蔵配線基板及び半導体装置 | |
JP2004165277A (ja) | 電子部品実装構造及びその製造方法 | |
US20160218021A1 (en) | Semiconductor package and method of manufacturing the same | |
JP2008047732A (ja) | 半導体装置及びその製造方法 | |
US7763977B2 (en) | Semiconductor device and manufacturing method therefor | |
JP4528018B2 (ja) | 半導体装置及びその製造方法 | |
JP4321758B2 (ja) | 半導体装置 | |
JP5179391B2 (ja) | 半導体装置の製造方法および半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110325 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110325 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111213 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111215 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120131 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120522 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120523 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150601 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5005603 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |