JP5001550B2 - ポリイミド樹脂の無機薄膜形成方法及び表面改質した無機薄膜形成用ポリイミド樹脂の製造方法 - Google Patents
ポリイミド樹脂の無機薄膜形成方法及び表面改質した無機薄膜形成用ポリイミド樹脂の製造方法 Download PDFInfo
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- JP5001550B2 JP5001550B2 JP2005352585A JP2005352585A JP5001550B2 JP 5001550 B2 JP5001550 B2 JP 5001550B2 JP 2005352585 A JP2005352585 A JP 2005352585A JP 2005352585 A JP2005352585 A JP 2005352585A JP 5001550 B2 JP5001550 B2 JP 5001550B2
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- polyimide resin
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- metal
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- 229910052751 metal Inorganic materials 0.000 claims description 60
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- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
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- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 1
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- 238000000354 decomposition reaction Methods 0.000 description 1
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- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
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- XGCKLPDYTQRDTR-UHFFFAOYSA-H indium(iii) sulfate Chemical compound [In+3].[In+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O XGCKLPDYTQRDTR-UHFFFAOYSA-H 0.000 description 1
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- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 1
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- 239000011135 tin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- FAKFSJNVVCGEEI-UHFFFAOYSA-J tin(4+);disulfate Chemical compound [Sn+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O FAKFSJNVVCGEEI-UHFFFAOYSA-J 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910001456 vanadium ion Inorganic materials 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/04—Pretreatment of the material to be coated
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/06—Coating on selected surface areas, e.g. using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
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Description
(1)前記ポリイミド樹脂の無機薄膜形成部位にアルカリ性水溶液を塗布し、前記ポリイミド樹脂のイミド環を開裂させてカルボキシル基を生成させると共に前記ポリイミド樹脂をポリアミック酸に改質する工程、
(2)この改質された層に前記ポリアミック酸を可溶な溶媒を接触させることによって、前記改質層の一部を除去して凹部を形成する工程、
(3)前記凹部の内表面の前記カルボキシル基を有する前記ポリイミド樹脂に金属イオン含有溶液を接触させて前記カルボキシル基の金属塩を生成する工程、
(4)この金属塩を金属として、もしくは金属酸化物或いは半導体として、前記ポリイミド樹脂表面に析出させて前記無機薄膜を形成する工程、とを有することを特徴とするものである。
−COO−…M2+…−OOC−
のようにカルボキシル基に金属イオン(M2+)を配位させてカルボキシル基の金属塩(カルボン酸の金属塩)を生成させることができるものであり、図1(e)のように凹部3の内表面の改質層4の箇所に金属イオン含有改質層5を形成させることができるものである。ここで、ポリイミド樹脂に生成させたカルボキシル基中の水酸基、アルカリ金属もしくはアルカリ土類金属と、金属イオンとの間の配位子交換を進行させるために、水酸基やアルカリ金属もしくはアルカリ土類金属の解離度を増加させる必要がある。このためにはポリイミド樹脂基材1を酸性状態に保つことが必要であり、従ってこの場合には金属イオン含有溶液として金属イオン含有酸性溶液を用いるのが好ましい。
10M濃度のKOH水溶液100質量部に、増粘剤としてポリエチレングリコール10質量部を加え、これを攪拌して溶解させることによって、アルカリ性水溶液を調製した。
エチレンジアミン :0.60M
Co(NO3)2 :0.15M
アスコルビン酸 :0.01M
2,2’−ビピリジル :20ppm
pH :6.75
そして無電解銅めっき膜は凹部の内部において銅薄膜の上に析出し、膜厚が4μmの均一な銅めっき膜が得られた。銅めっき膜の電気抵抗は3×10−5Ωcmであり、先の銅薄膜とこの銅めっき膜とで、電子回路基板の回路を形成することができた(図1(g)参照)。
5M濃度のKOH水溶液を、ウォーターインオイルインウォーター法を用いてスチレンアクリル系樹脂のカプセルに内包し、粒径3μmのマイクロカプセルを調製した。
CH3COOH :1.0M
NaH2PO2 :0.2M
pH :4.5
そして無電解ニッケルめっき膜は凹部の内部において銀薄膜の上に析出し、膜厚が4μmの均一なニッケルめっき膜が得られた。ニッケルめっき膜の電気抵抗は3×10−5Ωcmであり、先の銀薄膜とこのニッケルめっき膜とで、電子回路基板の回路を形成することができた(図1(g)参照)。
1M濃度のNaOH水溶液に、増粘剤としてエチルセルロース30質量部を加え、これを攪拌して溶解させることによって、アルカリ性水溶液を調製した。
5M濃度のNaOH水溶液100質量部に、増粘剤としてエチルセルロース30質量部を加え、これを攪拌して溶解させることによって、アルカリ性水溶液を調製した。
3M濃度のMg(OH)2水溶液100質量部に、増粘剤としてエチルセルロース30質量部を加え、これを攪拌して溶解させることによって、アルカリ性水溶液を調製した。
5M濃度のKOH水溶液100質量部に、増粘剤としてグリセリン50質量部を加え、これを攪拌して溶解させることによって、アルカリ性水溶液を調製した。
5M濃度のエチレンジアミン水溶液100質量部に、増粘剤としてポリビニルピロリドン30質量部とグリセリン20質量部を加え、これを攪拌して溶解させることによって、アルカリ性水溶液を調製した。
5M濃度のエチレンジアミン水溶液100質量部に、増粘剤としてポリビニルピロリドン30質量部とグリセリン20質量部を加え、これを攪拌して溶解させることによって、アルカリ水溶液を調製した。
10M濃度のKOH水溶液100質量部に、増粘剤としてポリエチレングリコール10質量部を加え、これを攪拌して溶解させることによって、アルカリ水溶液を調製した。
2 アルカリ性水溶液
3 凹部
4 改質層
5 金属イオン含有改質層
6 無機薄膜
7 無電解めっき膜
Claims (13)
- ポリイミド樹脂の表面に膜厚が10〜500nmの無機薄膜を形成するにあたって、
(1)前記ポリイミド樹脂の無機薄膜形成部位にアルカリ性水溶液を塗布し、前記ポリイミド樹脂のイミド環を開裂させてカルボキシル基を生成させると共に前記ポリイミド樹脂をポリアミック酸に改質する工程、
(2)この改質された層に前記ポリアミック酸を可溶な溶媒を接触させることによって、前記改質層の一部を除去して凹部を形成する工程、
(3)前記凹部の内表面の前記カルボキシル基を有する前記ポリイミド樹脂に金属イオン含有溶液を接触させて前記カルボキシル基の金属塩を生成する工程、
(4)この金属塩を金属として、もしくは金属酸化物或いは半導体として、前記ポリイミド樹脂表面に析出させて前記無機薄膜を形成する工程、とを有することを特徴とするポリイミド樹脂の無機薄膜形成方法。 - 前記ポリアミック酸を可溶な溶媒が、アミド基を有する溶媒であることを特徴とする請求項1に記載のポリイミド樹脂の無機薄膜形成方法。
- 前記(1)工程において、前記アルカリ性水溶液をインクジェット法により前記ポリイミド樹脂の前記無機薄膜形成部位に塗布することを特徴とする請求項1又は2に記載のポリイミド樹脂の無機薄膜形成方法。
- 前記(1)工程において、前記アルカリ性水溶液を転写法により前記ポリイミド樹脂の前記無機薄膜形成部位に塗布することを特徴とする請求項1又は2に記載のポリイミド樹脂の無機薄膜形成方法。
- 前記(1)工程において、前記ポリイミド樹脂の前記無機薄膜形成部位以外の部分に耐アルカリ性保護層を形成した後、前記アルカリ性水溶液を塗布することにより、前記ポリイミド樹脂の前記無機薄膜形成部位に前記アルカリ性水溶液を接触させることを特徴とする請求項1又は2に記載のポリイミド樹脂の無機薄膜形成方法。
- 前記(4)の前記無機薄膜を形成する工程は、前記金属塩を還元処理することにより、前記金属塩を金属として前記ポリイミド樹脂表面に析出させて、金属薄膜を形成する工程であることを特徴とする請求項1乃至5のいずれか一項に記載のポリイミド樹脂の無機薄膜形成方法。
- 前記(4)の前記無機薄膜を形成する工程は、前記金属塩を活性ガスと反応させることにより、前記金属塩を金属酸化物或いは半導体として前記ポリイミド樹脂表面に析出させて、金属酸化物薄膜或いは半導体薄膜を形成する工程であることを特徴とする請求項1乃至5のいずれか一項に記載のポリイミド樹脂の無機薄膜形成方法。
- 前記(4)工程において、析出した前記無機薄膜は無機ナノ粒子の集合体から構成されていることを特徴とする請求項1乃至7のいずれか一項に記載のポリイミド樹脂の無機薄膜形成方法。
- 前記(4)工程において、前記無機ナノ粒子の前記集合体の一部が前記ポリイミド樹脂に埋包されていることを特徴とする請求項8に記載のポリイミド樹脂の無機薄膜形成方法。
- 前記(4)工程の後に、(5)前記無機薄膜を析出させた前記ポリイミド樹脂表面に無電解めっきを施す工程を有することを特徴とする請求項1乃至9のいずれか一項に記載のポリイミド樹脂の無機薄膜形成方法。
- 前記(5)工程において、前記無機ナノ粒子の前記集合体をめっき析出核として前記無電解めっきを行なうことを特徴とする請求項10に記載のポリイミド樹脂の無機薄膜形成方法。
- 前記無機薄膜形成部位は回路パターン形状であることを特徴とする請求項1乃至11のいずれか一項に記載のポリイミド樹脂の無機薄膜形成方法。
- ポリイミド樹脂の表面に、アルカリ性水溶液を部分的に塗布して、前記ポリイミド樹脂のイミド環を開裂させてカルボキシル基を生成させると共に前記ポリイミド樹脂をポリアミック酸に改質し、この改質された層に前記ポリアミック酸を可溶な溶媒を接触させることによって前記改質層の一部を除去し、前記カルボキシル基を有する前記改質層を残存させた状態で凹部を形成することを特徴とする表面改質した無機薄膜形成用ポリイミド樹脂の製造方法。
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