JP4976277B2 - 背面薄化処理した固体イメージデバイス - Google Patents
背面薄化処理した固体イメージデバイス Download PDFInfo
- Publication number
- JP4976277B2 JP4976277B2 JP2007501764A JP2007501764A JP4976277B2 JP 4976277 B2 JP4976277 B2 JP 4976277B2 JP 2007501764 A JP2007501764 A JP 2007501764A JP 2007501764 A JP2007501764 A JP 2007501764A JP 4976277 B2 JP4976277 B2 JP 4976277B2
- Authority
- JP
- Japan
- Prior art keywords
- array
- collimator
- pixel
- die
- image device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000007787 solid Substances 0.000 title claims description 3
- 230000006870 function Effects 0.000 claims description 11
- 238000003491 array Methods 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 33
- 238000000034 method Methods 0.000 description 33
- 229910052710 silicon Inorganic materials 0.000 description 32
- 239000010703 silicon Substances 0.000 description 32
- 239000000758 substrate Substances 0.000 description 29
- 230000008569 process Effects 0.000 description 19
- 238000005530 etching Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 238000013459 approach Methods 0.000 description 10
- 125000005843 halogen group Chemical class 0.000 description 10
- 238000001444 catalytic combustion detection Methods 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004297 night vision Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000005295 random walk Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/26—Image pick-up tubes having an input of visible light and electric output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
Claims (6)
- 第1及び第2ダイを有する固体イメージデバイスであって、
前記第1ダイは正面及び背面を有し、前記第1ダイは、前記第1ダイの第1領域部分内の前記正面に配置された画素アレイと、選択されたピッチpを有する画素と、前記第1ダイの他の領域部分に配置された前記画素アレイを読み出すための回路と、前記画素アレイと正反対にある前記背面の領域と、から成り、
前記第2ダイは、コリメータ構造のアレイを有し、各コリメータ構造は長さhの視準軸及び前記画素アレイの画素を受容するのに十分な断面を有し、前記断面及び前記画素は相似した幾何形状により特徴付けられており、
前記第1ダイと前記第2ダイを接着するために、前記第1ダイの前記背面の選択された部分に接着媒体が挿入され、
前記コリメータ構造は前記画素アレイに関してわずかに許容ミスアライメントして方向付けられており、
前記コリメータ構造のアレイの前記コリメータ構造は側壁を有し、
前記コリメータ構造は電子のコリメータであり、散乱電子に関してバッフルとして機能し、
前記第1ダイの前記背面は薄化されている、
ことを特徴とする固体イメージデバイス。 - 請求項1に記載の固体イメージデバイスであって、前記画素アレイの要素は選択された幾何学的分布を有し、前記コリメータ構造のアレイの要素は選択された幾何学的分布を有し、前記画素アレイのアレイ幾何形状と前記コリメータ構造のアレイのアレイ幾何形状は同じである、ところの固体イメージデバイス。
- 請求項2に記載の固体イメージデバイスであって、前記コリメータ構造のアレイの前記各コリメータ要素は視準軸を横切る内部領域を有し、前記内部領域は画素のサブアレイを実質的に収容し、前記画素のサブアレイの各々は共通の感応面を有する、ところの固体イメージデバイス。
- 請求項3に記載の固体イメージデバイスであって、前記サブアレイは単一の画素から成る、ところの固体イメージデバイス。
- 請求項4に記載の固体イメージデバイスであって、各画素は正方形の感応領域を有する、ところの固体イメージデバイス。
- 請求項1に記載の固体イメージデバイスであって、比率h/pは1から75の範囲にある、ところの固体イメージデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/795,040 | 2004-03-05 | ||
US10/795,040 US20040169248A1 (en) | 2003-01-31 | 2004-03-05 | Backside thinning of image array devices |
PCT/US2004/035238 WO2005096393A1 (en) | 2004-03-05 | 2004-10-25 | Backside thinning of image array devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007527122A JP2007527122A (ja) | 2007-09-20 |
JP4976277B2 true JP4976277B2 (ja) | 2012-07-18 |
Family
ID=35064083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007501764A Expired - Fee Related JP4976277B2 (ja) | 2004-03-05 | 2004-10-25 | 背面薄化処理した固体イメージデバイス |
Country Status (5)
Country | Link |
---|---|
US (1) | US20040169248A1 (ja) |
EP (1) | EP1741143B1 (ja) |
JP (1) | JP4976277B2 (ja) |
DE (1) | DE602004030951D1 (ja) |
WO (1) | WO2005096393A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE527101C2 (sv) * | 2004-05-19 | 2005-12-20 | Volvo Lastvagnar Ab | Magnetbrytararrangemang och förfarande för att erhålla en differentialmagnetbrytare |
US8482639B2 (en) * | 2008-02-08 | 2013-07-09 | Omnivision Technologies, Inc. | Black reference pixel for backside illuminated image sensor |
US9142586B2 (en) | 2009-02-24 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad design for backside illuminated image sensor |
US8531565B2 (en) | 2009-02-24 | 2013-09-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Front side implanted guard ring structure for backside illuminated image sensor |
TWI440169B (zh) * | 2009-08-31 | 2014-06-01 | Sumco Corp | 固態攝影元件用半導體晶圓的薄膜化控制方法 |
US8233066B2 (en) | 2010-02-18 | 2012-07-31 | Omnivision Technologies, Inc. | Image sensor with improved black level calibration |
US8698925B2 (en) | 2010-04-21 | 2014-04-15 | Intevac, Inc. | Collimator bonding structure and method |
US8338856B2 (en) | 2010-08-10 | 2012-12-25 | Omnivision Technologies, Inc. | Backside illuminated image sensor with stressed film |
NL2011905C2 (en) * | 2013-12-06 | 2015-06-09 | Photonis Netherlands B V | Electron-bombarded image sensor device. |
US11621289B2 (en) | 2020-05-22 | 2023-04-04 | Eotech, Llc | Compact proximity focused image sensor |
CN112086474A (zh) * | 2020-08-28 | 2020-12-15 | 清华大学深圳国际研究生院 | 荧光探测用图像传感器件 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4000503A (en) * | 1976-01-02 | 1976-12-28 | International Audio Visual, Inc. | Cold cathode for infrared image tube |
US4348690A (en) | 1981-04-30 | 1982-09-07 | Rca Corporation | Semiconductor imagers |
JPS59108461A (ja) * | 1982-12-14 | 1984-06-22 | Olympus Optical Co Ltd | 固体撮像装置 |
JP2578774B2 (ja) * | 1986-09-02 | 1997-02-05 | 日本板硝子株式会社 | レンズ付きモジュ−ルの製造方法 |
US5688715A (en) | 1990-03-29 | 1997-11-18 | The United States Of America As Represented By The Secretary Of The Navy | Excimer laser dopant activation of backside illuminated CCD's |
US5244817A (en) | 1992-08-03 | 1993-09-14 | Eastman Kodak Company | Method of making backside illuminated image sensors |
US5500540A (en) * | 1994-04-15 | 1996-03-19 | Photonics Research Incorporated | Wafer scale optoelectronic package |
JPH08160145A (ja) * | 1994-12-06 | 1996-06-21 | Toshiba Corp | X線検出器 |
DE19618593A1 (de) * | 1995-05-19 | 1996-11-21 | Heidenhain Gmbh Dr Johannes | Strahlungsempfindliches Detektorelement und Verfahren zur Herstellung desselben |
JPH11337646A (ja) * | 1998-05-29 | 1999-12-10 | Toshiba Corp | 放射線半導体検出器、放射線半導体検出器アレイおよびコリメータ設置装置 |
US6307586B1 (en) | 1999-07-20 | 2001-10-23 | Intevac, Inc. | Electron bombarded active pixel sensor camera incorporating gain control |
US20020020846A1 (en) * | 2000-04-20 | 2002-02-21 | Bo Pi | Backside illuminated photodiode array |
JP2002319669A (ja) * | 2001-04-23 | 2002-10-31 | Hamamatsu Photonics Kk | 裏面入射型ホトダイオード及びホトダイオードアレイ |
US7023126B2 (en) * | 2003-12-03 | 2006-04-04 | Itt Manufacturing Enterprises Inc. | Surface structures for halo reduction in electron bombarded devices |
-
2004
- 2004-03-05 US US10/795,040 patent/US20040169248A1/en not_active Abandoned
- 2004-10-25 JP JP2007501764A patent/JP4976277B2/ja not_active Expired - Fee Related
- 2004-10-25 EP EP04821873A patent/EP1741143B1/en active Active
- 2004-10-25 DE DE602004030951T patent/DE602004030951D1/de active Active
- 2004-10-25 WO PCT/US2004/035238 patent/WO2005096393A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JP2007527122A (ja) | 2007-09-20 |
US20040169248A1 (en) | 2004-09-02 |
DE602004030951D1 (de) | 2011-02-17 |
EP1741143B1 (en) | 2011-01-05 |
EP1741143A1 (en) | 2007-01-10 |
WO2005096393A1 (en) | 2005-10-13 |
EP1741143A4 (en) | 2007-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7479686B2 (en) | Backside imaging through a doped layer | |
EP1306906B1 (en) | Electron bombarded active pixel sensor | |
US6504158B2 (en) | Imaging array minimizing leakage currents | |
US6657178B2 (en) | Electron bombarded passive pixel sensor imaging | |
US20100327387A1 (en) | Avalanche Photodiode | |
US8304354B2 (en) | Methods to avoid laser anneal boundary effect within BSI CMOS image sensor array | |
JP2010098329A (ja) | フォトダイオードアレイ、その製造方法、及び放射線検出器 | |
US7855094B2 (en) | Photo-detector for detecting image signal of infrared laser radar and method of manufacturing the same | |
JP4976277B2 (ja) | 背面薄化処理した固体イメージデバイス | |
JP2003086827A (ja) | ホトダイオードアレイ、固体撮像装置、及び、放射線検出器 | |
US7042060B2 (en) | Backside thinning of image array devices | |
JP3441101B2 (ja) | 電子管 | |
CN114284305B (zh) | 光电探测器及其制备方法、射线探测装置 | |
EP1652237B1 (en) | Backside thinning of image array devices | |
KR100263474B1 (ko) | 고체 촬상 소자 및 그의 제조 방법 | |
JP7440545B2 (ja) | 薄層透過層支持構造を含むイメージインテンシファイア | |
EP0592400B1 (en) | Silicon avalanche photodiode array | |
CN115020504B (zh) | 硅探测器的制造方法 | |
WO2001018564A1 (en) | Digital x-ray imaging device | |
JPH05205674A (ja) | 撮像素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071016 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20080529 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101101 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110201 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110208 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110301 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110308 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110401 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120404 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120412 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150420 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |