JP4971365B2 - プラズマ反応チャンバ用の電極アセンブリ - Google Patents
プラズマ反応チャンバ用の電極アセンブリInfo
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- JP4971365B2 JP4971365B2 JP2008554288A JP2008554288A JP4971365B2 JP 4971365 B2 JP4971365 B2 JP 4971365B2 JP 2008554288 A JP2008554288 A JP 2008554288A JP 2008554288 A JP2008554288 A JP 2008554288A JP 4971365 B2 JP4971365 B2 JP 4971365B2
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- 238000006243 chemical reaction Methods 0.000 title claims description 13
- 239000000463 material Substances 0.000 claims description 100
- 238000012545 processing Methods 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 238000005304 joining Methods 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 24
- 235000012431 wafers Nutrition 0.000 description 23
- 238000000034 method Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 16
- 238000005530 etching Methods 0.000 description 13
- 229920001971 elastomer Polymers 0.000 description 12
- 239000000806 elastomer Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 9
- 239000007767 bonding agent Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007717 exclusion Effects 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
Claims (18)
- 半導体基板の処理において使用されるプラズマ反応チャンバ用の電極アセンブリであって、
下側接合表面を有する背面部材と、
一方の側に下側表面を、他方の側に接合表面を有し、当該接合表面が前記背面部材の前記下側接合表面に接合された内側電極と、
前記内側電極を取り囲んでいて、一方の側に下側表面を、他方の側に接合表面を有し、当該接合表面が前記背面部材の前記下側接合表面に接合された外側電極と、
前記内側電極および外側電極の前記接合表面と前記背面部材の前記下側接合表面との間に配置された接合材料と、を備え、
前記内側電極および前記外側電極の少なくとも一方が、他方の電極の前記下側表面の少なくとも一部分の下に延びるフランジを有し、これによりプラズマゾーンから前記接合材料への見通し線が排除されている、
ことを特徴とする電極アセンブリ。 - 前記フランジが、前記内側電極側にあり、前記外側電極の前記下側表面の下に延びることを特徴とする請求項1に記載の電極アセンブリ。
- 前記フランジが、前記外側電極側にあり、前記内側電極の前記下側表面の下に延びることを特徴とする請求項1に記載の電極アセンブリ。
- 前記内側電極および前記外側電極がそれぞれフランジを含み、前記外側電極の前記フランジが、前記内側電極の前記フランジの下に延びることを特徴とする請求項1に記載の電極アセンブリ。
- 前記内側電極および前記外側電極がそれぞれフランジを含み、前記内側電極の前記フランジが、前記外側電極の前記フランジの下に延びることを特徴とする請求項1に記載の電極アセンブリ。
- 前記フランジの内側表面が角度の付いた表面であることを特徴とする請求項3に記載の電極アセンブリ。
- 前記外側電極が、リング構成中に配置された複数のセグメントを含み、各セグメントが、隣接するセグメントの係合面と重なる係合面を有することを特徴とする請求項1に記載の電極アセンブリ。
- 前記複数のセグメントのそれぞれの前記係合面が、上側フランジおよび下側フランジを含むことを特徴とする請求項7に記載の電極アセンブリ。
- 前記背面部材が、内側背面部材および外側背面部材を備え、前記内側背面部材が、前記内側電極と同一の広さを有するとともに前記内側電極に取り付けられ、前記外側背面部材が、前記外側電極と同一の広さを有するとともに前記外側電極に取り付けられていることを特徴とする請求項1に記載の電極アセンブリ。
- 前記内側電極および前記外側電極が、シリコン製であることを特徴とする請求項1に記載の電極アセンブリ。
- 前記背面部材が、グラファイト製であることを特徴とする請求項1に記載の電極アセンブリ。
- 前記接合材料を受けるための少なくとも1つの凹部が前記背面部材に設けられていて、前記接合材料が、前記少なくとも1つの凹部に閉じ込められることを特徴とする請求項1に記載の電極アセンブリ。
- 前記電極が、前記背面部材の前記凹部内に受けられるように構成された突起部を有することを特徴とする請求項12に記載の電極アセンブリ。
- 前記背面部材の前記接合表面と前記内側電極および前記外側電極の前記接合表面との間の間隙を維持する少なくとも1つのスペーサを更に備え、前記背面部材が、前記接合材料を受けるための少なくとも1つの凹部を含むことを特徴とする請求項1に記載の電極アセンブリ。
- 前記内側電極および前記外側電極が、接合材料を受けるための凹部と、過剰な接合材料を取り込む外側溝とを有することを特徴とする請求項1に記載の電極アセンブリ。
- 前記凹部が、前記外側電極に設けられ、かつ、過剰な接合材料を取り込む内側溝および外側溝を含むことを特徴とする請求項15に記載の電極アセンブリ。
- 前記外側電極の前記接合表面が、複数の凹部を含むことを特徴とする請求項1に記載の電極アセンブリ。
- 前記内側電極および前記外側電極の対向する水平表面の間における水平間隙に前記接合材料がなく、前記外側電極の対向する垂直表面の間における垂直間隙が部分的に前記接合材料で充填されていて、前記垂直間隙は、前記内側電極および前記外側電極の前記接合表面と前記水平間隙との間に配置されていることを特徴とする請求項1に記載の電極アセンブリ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/352,307 US8789493B2 (en) | 2006-02-13 | 2006-02-13 | Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch |
US11/352,307 | 2006-02-13 | ||
PCT/US2007/003008 WO2007094984A2 (en) | 2006-02-13 | 2007-02-05 | SEALED ELASTOMER BONDED Si ELECTRODES AND THE LIKE FOR REDUCED PARTICLE CONTAMINATION IN DIELECTRIC ETCH |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009527107A JP2009527107A (ja) | 2009-07-23 |
JP2009527107A5 JP2009527107A5 (ja) | 2010-03-25 |
JP4971365B2 true JP4971365B2 (ja) | 2012-07-11 |
Family
ID=38367121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008554288A Active JP4971365B2 (ja) | 2006-02-13 | 2007-02-05 | プラズマ反応チャンバ用の電極アセンブリ |
Country Status (8)
Country | Link |
---|---|
US (1) | US8789493B2 (ja) |
EP (2) | EP3171393B1 (ja) |
JP (1) | JP4971365B2 (ja) |
KR (1) | KR101354281B1 (ja) |
CN (1) | CN101385127B (ja) |
MY (1) | MY167045A (ja) |
TW (1) | TWI412076B (ja) |
WO (1) | WO2007094984A2 (ja) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8789493B2 (en) | 2006-02-13 | 2014-07-29 | Lam Research Corporation | Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch |
US8440049B2 (en) * | 2006-05-03 | 2013-05-14 | Applied Materials, Inc. | Apparatus for etching high aspect ratio features |
US20070281032A1 (en) * | 2006-06-06 | 2007-12-06 | Hsu-Wei Fang | Method for generating polymeric wear particles |
JP5547366B2 (ja) * | 2007-03-29 | 2014-07-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US8216418B2 (en) * | 2007-06-13 | 2012-07-10 | Lam Research Corporation | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings |
US8152954B2 (en) * | 2007-10-12 | 2012-04-10 | Lam Research Corporation | Showerhead electrode assemblies and plasma processing chambers incorporating the same |
US8187414B2 (en) | 2007-10-12 | 2012-05-29 | Lam Research Corporation | Anchoring inserts, electrode assemblies, and plasma processing chambers |
CN101903979B (zh) * | 2007-12-19 | 2012-02-01 | 朗姆研究公司 | 组合喷淋头电极总成、连接其各部件的方法及衬底处理方法 |
SG187387A1 (en) * | 2007-12-19 | 2013-02-28 | Lam Res Corp | Film adhesive for semiconductor vacuum processing apparatus |
TWI501704B (zh) * | 2008-02-08 | 2015-09-21 | Lam Res Corp | 於電漿處理系統中用以改變面積比之方法與裝置 |
US8187413B2 (en) * | 2008-03-18 | 2012-05-29 | Lam Research Corporation | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket |
JP5348919B2 (ja) * | 2008-03-27 | 2013-11-20 | 東京エレクトロン株式会社 | 電極構造及び基板処理装置 |
US8161906B2 (en) * | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
US8221582B2 (en) | 2008-07-07 | 2012-07-17 | Lam Research Corporation | Clamped monolithic showerhead electrode |
US8206506B2 (en) * | 2008-07-07 | 2012-06-26 | Lam Research Corporation | Showerhead electrode |
CN101740298B (zh) * | 2008-11-07 | 2012-07-25 | 东京毅力科创株式会社 | 等离子体处理装置及其构成部件 |
US8869741B2 (en) * | 2008-12-19 | 2014-10-28 | Lam Research Corporation | Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber |
US8402918B2 (en) * | 2009-04-07 | 2013-03-26 | Lam Research Corporation | Showerhead electrode with centering feature |
US8272346B2 (en) | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
SG169960A1 (en) | 2009-09-18 | 2011-04-29 | Lam Res Corp | Clamped monolithic showerhead electrode |
JP3160877U (ja) | 2009-10-13 | 2010-07-15 | ラム リサーチ コーポレーションLam Research Corporation | シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極 |
DE202010014805U1 (de) * | 2009-11-02 | 2011-02-17 | Lam Research Corporation (Delaware Corporation) | Heissrandring mit geneigter oberer Oberfläche |
US8573152B2 (en) | 2010-09-03 | 2013-11-05 | Lam Research Corporation | Showerhead electrode |
JP5762798B2 (ja) * | 2011-03-31 | 2015-08-12 | 東京エレクトロン株式会社 | 天井電極板及び基板処理載置 |
US9859142B2 (en) | 2011-10-20 | 2018-01-02 | Lam Research Corporation | Edge seal for lower electrode assembly |
US9869392B2 (en) | 2011-10-20 | 2018-01-16 | Lam Research Corporation | Edge seal for lower electrode assembly |
CN104103566B (zh) * | 2013-04-15 | 2017-07-25 | 中微半导体设备(上海)有限公司 | 等离子体处理装置及其静电夹盘 |
US9433070B2 (en) | 2013-12-13 | 2016-08-30 | Kla-Tencor Corporation | Plasma cell with floating flange |
US9583377B2 (en) | 2013-12-17 | 2017-02-28 | Lam Research Corporation | Installation fixture for elastomer bands |
US10090211B2 (en) | 2013-12-26 | 2018-10-02 | Lam Research Corporation | Edge seal for lower electrode assembly |
JP6339866B2 (ja) | 2014-06-05 | 2018-06-06 | 東京エレクトロン株式会社 | プラズマ処理装置およびクリーニング方法 |
CN110379701A (zh) * | 2019-07-24 | 2019-10-25 | 沈阳拓荆科技有限公司 | 具有可调射频组件的晶圆支撑座 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5238499A (en) | 1990-07-16 | 1993-08-24 | Novellus Systems, Inc. | Gas-based substrate protection during processing |
US5074456A (en) * | 1990-09-18 | 1991-12-24 | Lam Research Corporation | Composite electrode for plasma processes |
JP2978358B2 (ja) | 1993-03-25 | 1999-11-15 | 東芝セラミックス株式会社 | エッチング用電極板 |
JP3210207B2 (ja) * | 1994-04-20 | 2001-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
TW299559B (ja) * | 1994-04-20 | 1997-03-01 | Tokyo Electron Co Ltd | |
US5569356A (en) | 1995-05-19 | 1996-10-29 | Lam Research Corporation | Electrode clamping assembly and method for assembly and use thereof |
US5534751A (en) * | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
JPH11162940A (ja) | 1997-11-28 | 1999-06-18 | Hitachi Chem Co Ltd | プラズマエッチング用電極 |
US6079356A (en) * | 1997-12-02 | 2000-06-27 | Applied Materials, Inc. | Reactor optimized for chemical vapor deposition of titanium |
JP3981967B2 (ja) | 1998-03-09 | 2007-09-26 | 三菱マテリアル株式会社 | 放熱性を有するプラズマエッチング用シリコン電極板 |
US6073577A (en) * | 1998-06-30 | 2000-06-13 | Lam Research Corporation | Electrode for plasma processes and method for manufacture and use thereof |
US6050216A (en) * | 1998-08-21 | 2000-04-18 | M.E.C. Technology, Inc. | Showerhead electrode for plasma processing |
US6451157B1 (en) * | 1999-09-23 | 2002-09-17 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US6170432B1 (en) * | 2000-01-24 | 2001-01-09 | M.E.C. Technology, Inc. | Showerhead electrode assembly for plasma processing |
US6391787B1 (en) * | 2000-10-13 | 2002-05-21 | Lam Research Corporation | Stepped upper electrode for plasma processing uniformity |
US20020127853A1 (en) * | 2000-12-29 | 2002-09-12 | Hubacek Jerome S. | Electrode for plasma processes and method for manufacture and use thereof |
US6827815B2 (en) * | 2002-01-15 | 2004-12-07 | Applied Materials, Inc. | Showerhead assembly for a processing chamber |
US6846726B2 (en) * | 2002-04-17 | 2005-01-25 | Lam Research Corporation | Silicon parts having reduced metallic impurity concentration for plasma reaction chambers |
JP3868341B2 (ja) | 2002-04-22 | 2007-01-17 | 日清紡績株式会社 | 耐熱性に優れたプラズマエッチング電極及びそれを装着したドライエッチング装置 |
EP1512164B1 (en) * | 2002-05-23 | 2016-01-06 | Lam Research Corporation | Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a mutli-part electrode |
US7267741B2 (en) | 2003-11-14 | 2007-09-11 | Lam Research Corporation | Silicon carbide components of semiconductor substrate processing apparatuses treated to remove free-carbon |
US7645341B2 (en) * | 2003-12-23 | 2010-01-12 | Lam Research Corporation | Showerhead electrode assembly for plasma processing apparatuses |
US8789493B2 (en) | 2006-02-13 | 2014-07-29 | Lam Research Corporation | Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch |
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2006
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Also Published As
Publication number | Publication date |
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EP1989727B1 (en) | 2016-12-28 |
EP3171393A1 (en) | 2017-05-24 |
CN101385127B (zh) | 2011-04-27 |
EP1989727A2 (en) | 2008-11-12 |
CN101385127A (zh) | 2009-03-11 |
TW200735211A (en) | 2007-09-16 |
WO2007094984A2 (en) | 2007-08-23 |
EP3171393B1 (en) | 2019-12-18 |
US20070187038A1 (en) | 2007-08-16 |
JP2009527107A (ja) | 2009-07-23 |
TWI412076B (zh) | 2013-10-11 |
EP1989727A4 (en) | 2010-09-15 |
MY167045A (en) | 2018-08-02 |
US8789493B2 (en) | 2014-07-29 |
KR20080096588A (ko) | 2008-10-30 |
WO2007094984A3 (en) | 2008-04-17 |
KR101354281B1 (ko) | 2014-01-23 |
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