JP4957650B2 - 磁界検出素子 - Google Patents
磁界検出素子 Download PDFInfo
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- JP4957650B2 JP4957650B2 JP2008129623A JP2008129623A JP4957650B2 JP 4957650 B2 JP4957650 B2 JP 4957650B2 JP 2008129623 A JP2008129623 A JP 2008129623A JP 2008129623 A JP2008129623 A JP 2008129623A JP 4957650 B2 JP4957650 B2 JP 4957650B2
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- 230000005291 magnetic effect Effects 0.000 title claims description 346
- 238000001514 detection method Methods 0.000 title claims description 39
- 230000005415 magnetization Effects 0.000 claims description 72
- 230000000694 effects Effects 0.000 claims description 47
- 230000008859 change Effects 0.000 claims description 30
- 230000008878 coupling Effects 0.000 claims description 10
- 238000010168 coupling process Methods 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000000725 suspension Substances 0.000 claims description 4
- 230000004044 response Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 47
- 239000000463 material Substances 0.000 description 17
- 230000003993 interaction Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 230000005290 antiferromagnetic effect Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 229910003321 CoFe Inorganic materials 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005381 magnetic domain Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000005330 Barkhausen effect Effects 0.000 description 1
- 229910019222 CoCrPt Inorganic materials 0.000 description 1
- 229910018979 CoPt Inorganic materials 0.000 description 1
- 230000005303 antiferromagnetism Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1107—Magnetoresistive
- Y10T428/1121—Multilayer
- Y10T428/1129—Super lattice [e.g., giant magneto resistance [GMR] or colossal magneto resistance [CMR], etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
Description
2 積層体
3 上部シールド電極層
4 下部シールド電極層
5 バッファ層
6,106 第1の磁性層
7 第1の非磁性中間層
8,108 第2の磁性層
9 第2の非磁性中間層
10 第3の磁性層
11キャップ層
12,13,15 絶縁層
14 バイアス磁性層
16 絶縁膜
P 膜面直交方向(積層方向)
S 記録媒体対向面
T トラック幅方向
Claims (8)
- 外部磁界に応じて磁化方向が変化する第1、第2、第3の磁性層であって、第1、第2、第3の磁性層の順で積層されている第1、第2、第3の磁性層と、該第1及び第2の磁性層の間に挟まれ、該第1及び第2の磁性層の間で磁気抵抗効果を生じさせる第1の非磁性中間層と、該第2及び第3の磁性層の間に挟まれ、無磁場中で該第2の磁性層と該第3の磁性層とを磁化方向が互いに反平行の向きとなるように交換結合させる第2の非磁性中間層と、を有し、センス電流が膜面直交方向に流れるようにされた積層体と、
前記積層体の記録媒体対向面の反対面に設けられ、前記積層体に該記録媒体対向面と直交する方向のバイアス磁界を印加するバイアス磁性層と、
を有し、
前記第1の非磁性中間層は、前記第1の磁性層と前記第2の磁性層との間に磁気抵抗効果を生じさせる金属、絶縁体、若しくは半導体、またはこれらの組み合わせを有し、
前記第3の磁性層の磁気膜厚は前記第2の磁性層の磁気膜厚よりも大きく、
前記バイアス磁界だけが印加された状態で、前記第1の磁性層は前記バイアス磁界と同じ方向に磁化され、前記第3の磁性層は、前記バイアス磁界の方向に対して最大40度の範囲の角度差で、前記バイアス磁界と同じ方向に磁化され、前記第2の磁性層は前記バイアス磁界と直交する方向に磁化されており、
前記第2の磁性層は感磁層として機能する、磁界検出素子。 - 外部磁界に応じて磁化方向が変化する第1、第2、第3の磁性層であって、第3、第2、第1の磁性層の順で積層されている第1、第2、第3の磁性層と、該第1及び第2の磁性層の間に挟まれ、該第1及び第2の磁性層の間で磁気抵抗効果を生じさせる第1の非磁性中間層と、該第2及び第3の磁性層の間に挟まれ、無磁場中で該第2の磁性層と該第3の磁性層とを磁化方向が互いに反平行の向きとなるように交換結合させる第2の非磁性中間層と、を有し、センス電流が膜面直交方向に流れるようにされた積層体と、
前記積層体の記録媒体対向面の反対面に設けられ、前記積層体に該記録媒体対向面と直交する方向のバイアス磁界を印加するバイアス磁性層と、
を有し、
前記第1の非磁性中間層は、前記第1の磁性層と前記第2の磁性層との間に磁気抵抗効果を生じさせる金属、絶縁体、若しくは半導体、またはこれらの組み合わせを有し、
前記第3の磁性層の磁気膜厚は前記第2の磁性層の磁気膜厚よりも大きく、
前記バイアス磁界だけが印加された状態で、前記第1の磁性層は前記バイアス磁界と同じ方向に磁化され、前記第3の磁性層は、前記バイアス磁界の方向に対して最大40度の範囲の角度差で、前記バイアス磁界と同じ方向に磁化され、前記第2の磁性層は前記バイアス磁界と直交する方向に磁化されており、
前記第2の磁性層は感磁層として機能する、磁界検出素子。 - 前記第2の非磁性中間層の交換結合定数は1×10-13J/m2以上、2×10-11J/m2以下の範囲にある、請求項1または2に記載の磁界検出素子。
- 前記第1の非磁性中間層の比抵抗は前記第2の非磁性中間層の比抵抗よりも大きい、請求項1から3のいずれか1項に記載の磁界検出素子。
- 請求項1から4のいずれか1項に記載の磁界検出素子を備えたスライダ。
- 請求項1から5のいずれか1項に記載の磁界検出素子となるべき積層体が形成されたウエハ。
- 請求項5に記載のスライダと、前記スライダを弾性的に支持するサスペンションと、を有するヘッドジンバルアセンブリ。
- 請求項5に記載のスライダと、該スライダを支持するとともに、該スライダを記録媒体に対して位置決めする装置と、を有するハードディスク装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/847,521 US20090061258A1 (en) | 2007-08-30 | 2007-08-30 | Cpp-type magnetoresistance effect element having characteristic free layers |
US11/847,521 | 2007-08-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009060079A JP2009060079A (ja) | 2009-03-19 |
JP4957650B2 true JP4957650B2 (ja) | 2012-06-20 |
Family
ID=40407992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008129623A Expired - Fee Related JP4957650B2 (ja) | 2007-08-30 | 2008-05-16 | 磁界検出素子 |
Country Status (2)
Country | Link |
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US (1) | US20090061258A1 (ja) |
JP (1) | JP4957650B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5132706B2 (ja) * | 2010-03-31 | 2013-01-30 | 株式会社東芝 | 磁気ヘッド、磁気ヘッドアセンブリおよび磁気記録再生装置 |
US8564911B2 (en) * | 2011-02-17 | 2013-10-22 | Tdk Corporation | Magneto-resistive effect element having spacer layer including gallium oxide layer with metal element |
US8593766B2 (en) * | 2011-02-22 | 2013-11-26 | Tdk Corporation | Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and metal intermediate layer |
US8498083B2 (en) * | 2011-03-16 | 2013-07-30 | Tdk Corporation | Magneto-resistive effect element having spacer layer containing gallium oxide, partially oxidized copper |
US8896971B2 (en) * | 2012-08-21 | 2014-11-25 | Seagate Technology Llc | Aligned magnetic insulating feature |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6169647B1 (en) * | 1998-06-11 | 2001-01-02 | Seagate Technology Llc | Giant magnetoresistive sensor having weakly pinned ferromagnetic layer |
AU2001255695A1 (en) * | 2000-09-19 | 2002-04-02 | Seagate Technology Llc | Giant magnetoresistive sensor having self-consistent demagnetization fields |
US6724583B2 (en) * | 2000-12-19 | 2004-04-20 | Seagate Technology Llc | Adjustable permanent magnet bias |
US7035062B1 (en) * | 2001-11-29 | 2006-04-25 | Seagate Technology Llc | Structure to achieve sensitivity and linear density in tunneling GMR heads using orthogonal magnetic alignments |
JP4275347B2 (ja) * | 2002-03-20 | 2009-06-10 | Tdk株式会社 | 磁気検出素子 |
JP2004039869A (ja) * | 2002-07-03 | 2004-02-05 | Hitachi Ltd | 磁気抵抗センサ、磁気ヘッド、ならびに磁気記録装置 |
US7019371B2 (en) * | 2004-01-26 | 2006-03-28 | Seagate Technology Llc | Current-in-plane magnetic sensor including a trilayer structure |
US7715154B2 (en) * | 2005-04-13 | 2010-05-11 | Seagate Technology Llc | Suppression of spin momentum transfer and related torques in magnetoresistive elements |
WO2007015355A1 (ja) * | 2005-08-02 | 2007-02-08 | Nec Corporation | Mram |
JP2007150254A (ja) * | 2005-10-28 | 2007-06-14 | Tdk Corp | 磁気抵抗効果素子、基体、ウエハ、ヘッドジンバルアセンブリ、ハードディスク装置、磁気メモリ素子、および磁気センサアセンブリ |
US8077436B2 (en) * | 2008-03-20 | 2011-12-13 | Tdk Corporation | CPP-type magnetoresistance effect element having three magnetic layers |
US8208230B2 (en) * | 2008-04-10 | 2012-06-26 | Headway Technologies, Inc. | Binary output reader structure (BORS) with high utilization rate |
US8018691B2 (en) * | 2008-10-20 | 2011-09-13 | Hitachi Global Storage Technologies Netherlands B.V. | CPP dual free layer magnetoresistive head for magnetic data storage |
-
2007
- 2007-08-30 US US11/847,521 patent/US20090061258A1/en not_active Abandoned
-
2008
- 2008-05-16 JP JP2008129623A patent/JP4957650B2/ja not_active Expired - Fee Related
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US20090061258A1 (en) | 2009-03-05 |
JP2009060079A (ja) | 2009-03-19 |
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