JP4953198B2 - 選択的エッチングを行う方法 - Google Patents
選択的エッチングを行う方法Info
- Publication number
- JP4953198B2 JP4953198B2 JP2006552600A JP2006552600A JP4953198B2 JP 4953198 B2 JP4953198 B2 JP 4953198B2 JP 2006552600 A JP2006552600 A JP 2006552600A JP 2006552600 A JP2006552600 A JP 2006552600A JP 4953198 B2 JP4953198 B2 JP 4953198B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- liquid
- liquid etchant
- etchant
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 21
- 238000005530 etching Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims description 53
- 239000007788 liquid Substances 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 25
- -1 fluoride ions Chemical class 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 230000002378 acidificating effect Effects 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 239000000243 solution Substances 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 150000004645 aluminates Chemical class 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
フッ化水素酸、および酸とアルコールとの両方を含んで成っている。
・ 基質上に群Aから選ばれる第1の材料を与え、
・ 基質上に群Bから選ばれる第2の材料を与え、
・ 基質の表面に平行な平均速度vが最低0.1m/秒になるような十分速い速度で、基質の表面を横切って液体エッチング剤を流すことにより該第2の材料に対して少なくとも2:1の選択率で該第1の材料を選択的にエッチングすることを含んで成る選択的エッチング法によって達成される。好ましい速度は0.5m/秒以上である。
・ 基質(ウェーハ)に実質的に平行に板を配置し、これによって基質と該板との間に距離dの間隙をつくる。
に加速または減速される。ここでvaはウェーハに接触した時の液体の速度である。
va 2=v0 2+2gl
下方から液が放出される場合:
va 2=v0 2−2gl
va...ウェーハと接触した時の液体の速度
vo...放出ノズルを離れる時の液体の速度
g...重力による加速度
l...ノズルと基質表面との高さの差
多結晶性珪素)を含んで成っている。二酸化珪素に対して第1の材料を選択的にエッチングする際、特にフッ素イオンを含んで成る液体エッチング剤を用いる場合、本発明方法は特に有用である。
・ フッ素イオン、および溶液の誘電率を低下させる添加物、例えばアルコールを含んで成る溶液。
Claims (5)
- − 基質上にエネルギーの高い粒子の衝撃で予備処理されたHfO2又はZrO2である第1の材料を与え、
− 基質上に第2の材料として二酸化珪素を与え、
− 基質の表面に平行な平均速度vが最低0.1m/秒になるような十分速い速度で、基質の表面を横切って液体エッチング剤を流すことにより該第2の材料に対して少なくとも2:1の選択率で該第1の材料を選択的にエッチングすることを含んで成り、こゝで、
該液体エッチング剤を自由ビームの連続流として基質の上に放出させ、基質の表面上に広げ、
該液体エッチング剤を少なくとも0.5リットル/分の容積流量で放出させ、
該液体エッチング剤に露出させながら該基質を回転させ
該液体エッチング剤が下記の群
フッ素イオン、および溶液の誘電率を低下させる添加物を含む溶液
フッ素イオンを含んで成る酸性水溶液
から選択される
ことを特徴とする選択的エッチング方法。 - 液体流の衝突点を基質の表面を横切って時系列的に動かすことを特徴とする請求項1記載の方法。
- 該液体エッチング剤はフッ素イオン、およびアルコールを含んで成る酸性水溶液であることを特徴とする請求項1記載の方法。
- 該液体エッチング剤はFとして計算された分析的な濃度として0.01モル/リットルより低いフッ素イオンを含んで成ることを特徴とする請求項1−3のいずれか1項記載の方法。
- 該液体エッチング剤は3より低いpH値をもっていることを特徴とする請求項1記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT2122004 | 2004-02-11 | ||
ATA212/2004 | 2004-02-11 | ||
PCT/EP2005/050510 WO2005078783A1 (en) | 2004-02-11 | 2005-02-07 | Method for selective etching |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007522663A JP2007522663A (ja) | 2007-08-09 |
JP4953198B2 true JP4953198B2 (ja) | 2012-06-13 |
Family
ID=34842242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006552600A Expired - Fee Related JP4953198B2 (ja) | 2004-02-11 | 2005-02-07 | 選択的エッチングを行う方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20070158307A1 (ja) |
EP (1) | EP1716589A1 (ja) |
JP (1) | JP4953198B2 (ja) |
KR (1) | KR101209827B1 (ja) |
CN (1) | CN1918699B (ja) |
TW (1) | TWI306625B (ja) |
WO (1) | WO2005078783A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI283442B (en) * | 2004-09-09 | 2007-07-01 | Sez Ag | Method for selective etching |
US20060054595A1 (en) * | 2004-09-10 | 2006-03-16 | Honeywell International Inc. | Selective hafnium oxide etchant |
EP1944801A1 (en) * | 2007-01-10 | 2008-07-16 | Interuniversitair Microelektronica Centrum | Methods for manufacturing a CMOS device with dual work function |
CN105428253B (zh) * | 2015-12-23 | 2018-09-28 | 通富微电子股份有限公司 | 半导体封装中控制凸点蚀刻底切的方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06103687B2 (ja) * | 1988-08-12 | 1994-12-14 | 大日本スクリーン製造株式会社 | 回転式表面処理方法および回転式表面処理における処理終点検出方法、ならびに回転式表面処理装置 |
WO2000052747A1 (en) * | 1999-03-03 | 2000-09-08 | Fsi International, Inc. | Method and system to uniformly etch substrates using an etching composition comprising a fluoride ion source and a hydrogen ion source |
JP3727299B2 (ja) * | 2001-12-04 | 2005-12-14 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US6667246B2 (en) * | 2001-12-04 | 2003-12-23 | Matsushita Electric Industrial Co., Ltd. | Wet-etching method and method for manufacturing semiconductor device |
US7887711B2 (en) * | 2002-06-13 | 2011-02-15 | International Business Machines Corporation | Method for etching chemically inert metal oxides |
US6835667B2 (en) * | 2002-06-14 | 2004-12-28 | Fsi International, Inc. | Method for etching high-k films in solutions comprising dilute fluoride species |
JP3795867B2 (ja) * | 2003-01-30 | 2006-07-12 | 株式会社ルネサステクノロジ | エッチング装置、エッチング方法および半導体装置の製造方法 |
JP2005032914A (ja) * | 2003-07-10 | 2005-02-03 | Dainippon Screen Mfg Co Ltd | 酸化ハフニウムのエッチング方法 |
-
2005
- 2005-01-24 TW TW094102000A patent/TWI306625B/zh not_active IP Right Cessation
- 2005-02-07 CN CN2005800046485A patent/CN1918699B/zh not_active Expired - Fee Related
- 2005-02-07 EP EP05707955A patent/EP1716589A1/en not_active Withdrawn
- 2005-02-07 JP JP2006552600A patent/JP4953198B2/ja not_active Expired - Fee Related
- 2005-02-07 US US10/588,766 patent/US20070158307A1/en not_active Abandoned
- 2005-02-07 WO PCT/EP2005/050510 patent/WO2005078783A1/en active Application Filing
-
2006
- 2006-09-05 KR KR1020067018098A patent/KR101209827B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2007522663A (ja) | 2007-08-09 |
KR20070005612A (ko) | 2007-01-10 |
WO2005078783A1 (en) | 2005-08-25 |
EP1716589A1 (en) | 2006-11-02 |
TWI306625B (en) | 2009-02-21 |
KR101209827B1 (ko) | 2012-12-07 |
TW200536012A (en) | 2005-11-01 |
CN1918699B (zh) | 2010-12-08 |
US20070158307A1 (en) | 2007-07-12 |
CN1918699A (zh) | 2007-02-21 |
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