JP5373853B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5373853B2 JP5373853B2 JP2011120851A JP2011120851A JP5373853B2 JP 5373853 B2 JP5373853 B2 JP 5373853B2 JP 2011120851 A JP2011120851 A JP 2011120851A JP 2011120851 A JP2011120851 A JP 2011120851A JP 5373853 B2 JP5373853 B2 JP 5373853B2
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- 239000004065 semiconductor Substances 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000007789 gas Substances 0.000 claims description 60
- 238000010438 heat treatment Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 28
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- -1 Ta 2 O 5 Inorganic materials 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000005465 channeling Effects 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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Description
また、前記イオン化したガスクラスターを照射することにより、前記誘電体膜における表面の膜質は、前記熱処理前の状態に近い状態に改質されるものであることを特徴とする。
また、前記熱処理により、前記誘電体膜の膜質を改質するものであって、前記イオン化したガスクラスターを照射することにより、前記誘電体膜の表面よりの厚さが2nm以下の領域の膜質を更に改質するものであることを特徴とする。
また、前記イオン化したガスクラスターを照射することにより、前記誘電体膜の表面よりの厚さが2nm以下の領域の膜質は、前記熱処理前の状態に近い状態に改質されるものであることを特徴とする。
また、前記熱処理は、前記誘電体膜を多結晶化するものであることを特徴とする。
図1に基づき本実施の形態における誘電体膜であるHigh-k膜の形成方法について説明する。
次に、本実施の形態において形成した誘電体膜の特性について説明する。ここで用いた誘電体膜の材料は酸化アルミニウムであり、成膜方法はCVD法により行った。尚、サンプルAはステップ102における成膜を行った後の状態のもの、サンプルBはステップ104における熱処理を行った後の状態のもの、サンプルCはステップ106におけるクラスターイオンを照射した後のものであり、本実施の形態における誘電体膜である。
次に、図7に基づき本実施の形態における半導体装置の製造方法について説明する。
12 イオン化電極
13 加速電極
14 クラスター選別部
15 ガスクラスター
21 シリコン基板
22 誘電体膜
22a ゲート絶縁膜
23 電極膜
23a ゲート電極
24 高濃度領域
25 ガスクラスター
Claims (10)
- 半導体基板上に誘電体膜を形成する成膜工程と、
前記誘電体膜を熱処理する熱処理工程と、
前記熱処理後の誘電体膜にイオン化したガスクラスターを照射する照射工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記熱処理により、前記誘電体膜の膜質を改質するものであって、
前記イオン化したガスクラスターを照射することにより、前記誘電体膜における表面の膜質を更に改質するものであることを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記イオン化したガスクラスターを照射することにより、前記誘電体膜における表面の膜質は、前記熱処理前の状態に近い状態に改質されるものであることを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記熱処理により、前記誘電体膜の膜質を改質するものであって、
前記イオン化したガスクラスターを照射することにより、前記誘電体膜の表面よりの厚さが2nm以下の領域の膜質を更に改質するものであることを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記イオン化したガスクラスターを照射することにより、前記誘電体膜の表面よりの厚さが2nm以下の領域の膜質は、前記熱処理前の状態に近い状態に改質されるものであることを特徴とする請求項4に記載の半導体装置の製造方法。
- 前記熱処理は、前記誘電体膜を多結晶化するものであることを特徴とする請求項2から5のいずれかに記載の半導体装置の製造方法。
- 前記誘電体膜を構成する材料は、HfO2、ZrO2、Al2O3、Ta2O5、TiO2、Y2O3のうちから選ばれる1または2以上のものを含む材料であることを特徴とする請求項1から6のいずれかに記載の半導体装置の製造方法。
- 前記ガスクラスターは、酸素又は窒素のガスクラスターを含むものであることを特徴とする請求項1から7のいずれかに記載の半導体装置の製造方法。
- 前記ガスクラスターを構成する原子の数の平均は、1000以上であることを特徴とする請求項1から8のいずれかに記載の半導体装置の製造方法。
- 前記誘電体膜は、CVD法又はALD法により成膜することにより形成されるものであることを特徴とする1から9のいずれかに記載の半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2011120851A JP5373853B2 (ja) | 2011-05-30 | 2011-05-30 | 半導体装置の製造方法 |
US13/473,817 US8741786B2 (en) | 2011-05-30 | 2012-05-17 | Fabrication method of semiconductor device |
TW101119043A TWI462176B (zh) | 2011-05-30 | 2012-05-29 | Manufacturing method of semiconductor device |
KR1020140033873A KR101816960B1 (ko) | 2011-05-30 | 2014-03-24 | 반도체 장치의 제조 방법 |
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JP2011120851A JP5373853B2 (ja) | 2011-05-30 | 2011-05-30 | 半導体装置の製造方法 |
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JP2012248759A JP2012248759A (ja) | 2012-12-13 |
JP5373853B2 true JP5373853B2 (ja) | 2013-12-18 |
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US20080017936A1 (en) * | 2006-06-29 | 2008-01-24 | International Business Machines Corporation | Semiconductor device structures (gate stacks) with charge compositions |
JP2010070788A (ja) * | 2008-09-17 | 2010-04-02 | Tokyo Electron Ltd | 基板処理方法 |
JP2010165705A (ja) * | 2009-01-13 | 2010-07-29 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
US7982196B2 (en) * | 2009-03-31 | 2011-07-19 | Tel Epion Inc. | Method for modifying a material layer using gas cluster ion beam processing |
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US20120309207A1 (en) | 2012-12-06 |
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TW201312654A (zh) | 2013-03-16 |
TWI462176B (zh) | 2014-11-21 |
US8741786B2 (en) | 2014-06-03 |
KR20140046429A (ko) | 2014-04-18 |
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