JP4947766B2 - シリコン系薄膜の形成方法 - Google Patents
シリコン系薄膜の形成方法 Download PDFInfo
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- JP4947766B2 JP4947766B2 JP2006092975A JP2006092975A JP4947766B2 JP 4947766 B2 JP4947766 B2 JP 4947766B2 JP 2006092975 A JP2006092975 A JP 2006092975A JP 2006092975 A JP2006092975 A JP 2006092975A JP 4947766 B2 JP4947766 B2 JP 4947766B2
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- thin film
- substrate
- gas
- silicon
- forming
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- 239000010409 thin film Substances 0.000 title claims description 76
- 238000000034 method Methods 0.000 title claims description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 32
- 229910052710 silicon Inorganic materials 0.000 title claims description 32
- 239000010703 silicon Substances 0.000 title claims description 32
- 239000007789 gas Substances 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 60
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 59
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 238000007789 sealing Methods 0.000 description 13
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 12
- 238000012546 transfer Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 208000018459 dissociative disease Diseases 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
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Description
(A)膜形成条件を以下に示す。
第1薄膜の形成時
成膜室4内の圧力:3Pa
H2ガスとArガスの混合ガスの導入速度:30sccm
HMDSガスの導入速度:3sccm
プラズマ電力:9kW
第2薄膜の形成時
成膜室4内の圧力:3Pa
N2ガスの導入速度:30sccm
HMDSガスの導入速度:3sccm
プラズマ電力:6kW
(B)第2薄膜の形成条件は、Aの場合と同一であり、第1薄膜は形成していない(水素プラズマ処理無し)。
11 第1薄膜
12 第2薄膜
K 基板
Claims (3)
- 絶縁機能またはバリア機能を有するシリコン系薄膜を、基板上にICPを用いたCVD法により形成するシリコン系薄膜の形成方法において、
先ず、原料ガスとして、水素元素を含むガスと、シリコン元素を含むガスとを用い、前記基板上にICPを用いたプラズマCVD法により第1薄膜を形成し、
次いで、窒素元素を含むガスと、シリコン元素を含むガスとを用い、絶縁機能またはバリア機能を有する第2薄膜を、前記第1薄膜上にICPを用いたCVD法により形成し、
第1薄膜及び第2薄膜を形成するにあたり、薄膜形成中に基板を揺動運動させることを特徴とするシリコン系薄膜の形成方法。 - 絶縁機能またはバリア機能を有するシリコン系薄膜を、基板上にICPを用いたCVD法により形成するシリコン系薄膜の形成方法において、
先ず、原料ガスとして、水素元素を含むガスと、シリコン元素を含むガスとを用い、前記基板上にICPを用いたプラズマCVD法により第1薄膜を形成し、
次いで、酸素元素を含むガスと、シリコン元素を含むガスとを用い、絶縁機能またはバリア機能を有する第2薄膜を、前記第1薄膜上にICPを用いたCVD法により形成し、
第1薄膜及び第2薄膜を形成するにあたり、薄膜形成中に基板を揺動運動させることを特徴とするシリコン系薄膜の形成方法。 - 第1薄膜及び第2薄膜を形成するにあたり用いる、シリコン元素を含むガスとして、H
MDSガスを用いる請求項1または請求項2に記載のシリコン系薄膜の形成方法。
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JP2006092975A JP4947766B2 (ja) | 2006-03-30 | 2006-03-30 | シリコン系薄膜の形成方法 |
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JP2006092975A JP4947766B2 (ja) | 2006-03-30 | 2006-03-30 | シリコン系薄膜の形成方法 |
Publications (2)
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JP2007262551A JP2007262551A (ja) | 2007-10-11 |
JP4947766B2 true JP4947766B2 (ja) | 2012-06-06 |
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JP2006092975A Active JP4947766B2 (ja) | 2006-03-30 | 2006-03-30 | シリコン系薄膜の形成方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5069597B2 (ja) * | 2008-03-27 | 2012-11-07 | 富士フイルム株式会社 | ガスバリアフィルムの製造方法 |
JP5798886B2 (ja) * | 2011-10-27 | 2015-10-21 | 株式会社カネカ | 有機el装置の製造方法 |
JP5967982B2 (ja) | 2012-03-07 | 2016-08-10 | 東レエンジニアリング株式会社 | プラズマcvd法により形成された化学蒸着膜 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03223342A (ja) * | 1989-03-22 | 1991-10-02 | Sekisui Chem Co Ltd | 酸化ケイ素被覆合成樹脂成形体およびその製造方法 |
JP2828152B2 (ja) * | 1991-08-13 | 1998-11-25 | 富士通 株式会社 | 薄膜形成方法、多層構造膜及びシリコン薄膜トランジスタの形成方法 |
JPH1018042A (ja) * | 1996-06-28 | 1998-01-20 | Osaka Gas Co Ltd | 薄膜作成装置 |
JP3476409B2 (ja) * | 2000-02-25 | 2003-12-10 | Necエレクトロニクス株式会社 | プラズマcvd装置 |
JP2001345450A (ja) * | 2000-06-01 | 2001-12-14 | Matsushita Electric Ind Co Ltd | 薄膜半導体素子の製造方法 |
JP2005166400A (ja) * | 2003-12-02 | 2005-06-23 | Samco Inc | 表面保護膜 |
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