JP4946590B2 - シリコン単結晶の育成方法、評価方法および生産方法 - Google Patents
シリコン単結晶の育成方法、評価方法および生産方法 Download PDFInfo
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- JP4946590B2 JP4946590B2 JP2007110378A JP2007110378A JP4946590B2 JP 4946590 B2 JP4946590 B2 JP 4946590B2 JP 2007110378 A JP2007110378 A JP 2007110378A JP 2007110378 A JP2007110378 A JP 2007110378A JP 4946590 B2 JP4946590 B2 JP 4946590B2
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- single crystal
- silicon single
- crystal
- dislocations
- dislocation
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 141
- 229910052710 silicon Inorganic materials 0.000 title claims description 141
- 239000010703 silicon Substances 0.000 title claims description 141
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000011156 evaluation Methods 0.000 title description 7
- 238000002109 crystal growth method Methods 0.000 title description 2
- 239000013078 crystal Substances 0.000 claims description 273
- 238000001816 cooling Methods 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 46
- 230000008646 thermal stress Effects 0.000 description 20
- 239000007788 liquid Substances 0.000 description 9
- 230000035882 stress Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- QLOKJRIVRGCVIM-UHFFFAOYSA-N 1-[(4-methylsulfanylphenyl)methyl]piperazine Chemical compound C1=CC(SC)=CC=C1CN1CCNCC1 QLOKJRIVRGCVIM-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000018734 Sambucus australis Nutrition 0.000 description 1
- 244000180577 Sambucus australis Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000008710 crystal-8 Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
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- Crystals, And After-Treatments Of Crystals (AREA)
Description
2:ヒーター
3:断熱材
4:シリコン単結晶
5:熱遮蔽体
6:冷却体
7:種結晶
8:シリコン融液
9:支持軸
10:引き上げ軸
Claims (3)
- チョクラルスキー法によるシリコン単結晶の育成方法であって、育成中のシリコン単結晶の周囲を囲繞するように冷却体を設けて前記シリコン単結晶を強制的に冷却しながら、前記シリコン単結晶の外表面に晶癖線を形成させ、結晶方位[110]のシリコン単結晶を育成することを特徴とするシリコン単結晶の育成方法。
- 強制的に冷却されながらチョクラルスキー法により育成された結晶方位[110]のシリコン単結晶を対象として、前記シリコン単結晶の外表面に形成される晶癖線の有無によって前記シリコン単結晶における転位発生の有無を判定することを特徴とするシリコン単結晶の評価方法。
- 育成中のシリコン単結晶を強制的に冷却しながら、結晶方位[110]のシリコン単結晶をチョクラルスキー法により育成し、得られた前記シリコン単結晶の外表面に晶癖線が存在する場合に、良品シリコン単結晶と判定することを特徴とするシリコン単結晶の生産方法。
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JP2007110378A JP4946590B2 (ja) | 2007-04-19 | 2007-04-19 | シリコン単結晶の育成方法、評価方法および生産方法 |
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JP2007110378A JP4946590B2 (ja) | 2007-04-19 | 2007-04-19 | シリコン単結晶の育成方法、評価方法および生産方法 |
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JP2008266068A JP2008266068A (ja) | 2008-11-06 |
JP4946590B2 true JP4946590B2 (ja) | 2012-06-06 |
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Families Citing this family (1)
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JP6425332B2 (ja) * | 2014-08-20 | 2018-11-21 | 三菱マテリアルテクノ株式会社 | 単結晶シリコン引上装置、および単結晶シリコン引上方法 |
Family Cites Families (2)
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JP3678129B2 (ja) * | 2000-09-26 | 2005-08-03 | 三菱住友シリコン株式会社 | 結晶成長方法 |
US7179330B2 (en) * | 2002-04-24 | 2007-02-20 | Shin-Etsu Handotai Co., Ltd. | Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer |
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