JP4943373B2 - デバイス実装方法 - Google Patents
デバイス実装方法 Download PDFInfo
- Publication number
- JP4943373B2 JP4943373B2 JP2008123105A JP2008123105A JP4943373B2 JP 4943373 B2 JP4943373 B2 JP 4943373B2 JP 2008123105 A JP2008123105 A JP 2008123105A JP 2008123105 A JP2008123105 A JP 2008123105A JP 4943373 B2 JP4943373 B2 JP 4943373B2
- Authority
- JP
- Japan
- Prior art keywords
- diode
- substrate
- igbt
- heat
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13062—Junction field-effect transistor [JFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
2 : IGBT
3 : ヒートシンク
4 : 樹脂基板
5 : スルーホール(貫通配線)
6 : ショッドキーダイオード端子
6': ショッドキーダイオード端子
7 : IGBT端子
7': IGBT端子
8 : アルミナブロック
9 : IGBTゲート端子
10 : ゲート接合用基板電極
11 : ショットキーダイオードチップ
12 : IGBTチップ
13 : アルミナ
14 : 樹脂基板
15 : スルーホール(貫通配線)
16 : ショットキーダイオード配線端子ワイヤ
16': ショットキーダイオード配線端子ワイヤ
17 : IGBT配線端子ワイヤ
17': IGBT配線端子ワイヤ
18 : ショットキーダイオード配線接合用電極パッド
19 : IGBTゲート配線ワイヤ
20 : ゲート接合用基板電極パッド
21 : IGBT配線接合用電極パッド
Claims (2)
- 200℃以上の高温で動作するダイオードデバイスと珪素材料からなるスイッチデバイスとを組み合わせて、高周波電気回路上で接続実装する方法において、2つのデバイスの間に熱絶縁可能な基板を少なくとも1層挟み、各々のデバイスを該基板の表裏に配置し、ダイオードデバイスとスイッチデバイスとを電気的に接続する接続部位の一部に、サーマルアンカーを設けることを特徴とするデバイス実装方法。
- 前記高温で動作するデバイスが、炭化珪素、ガリウム砒素、窒化ガリウム、及びダイヤモンドからなる群から選ばれた少なくとも1種の材料を基板として用いることを特徴とする請求項1のデバイス実装方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008123105A JP4943373B2 (ja) | 2008-05-09 | 2008-05-09 | デバイス実装方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008123105A JP4943373B2 (ja) | 2008-05-09 | 2008-05-09 | デバイス実装方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009272520A JP2009272520A (ja) | 2009-11-19 |
JP4943373B2 true JP4943373B2 (ja) | 2012-05-30 |
Family
ID=41438804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008123105A Expired - Fee Related JP4943373B2 (ja) | 2008-05-09 | 2008-05-09 | デバイス実装方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4943373B2 (ja) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000164800A (ja) * | 1998-11-30 | 2000-06-16 | Mitsubishi Electric Corp | 半導体モジュール |
JP3830860B2 (ja) * | 2001-05-31 | 2006-10-11 | 松下電器産業株式会社 | パワーモジュールとその製造方法 |
JP4096741B2 (ja) * | 2003-01-16 | 2008-06-04 | 松下電器産業株式会社 | 半導体装置 |
JP2005150454A (ja) * | 2003-11-17 | 2005-06-09 | Yaskawa Electric Corp | 電力変換装置の冷却構造 |
JP2006245171A (ja) * | 2005-03-02 | 2006-09-14 | Toshiba Corp | 電子部品モジュール |
JP4478618B2 (ja) * | 2005-06-28 | 2010-06-09 | 本田技研工業株式会社 | パワー半導体モジュール |
JP2008060430A (ja) * | 2006-08-31 | 2008-03-13 | Daikin Ind Ltd | 電力変換装置 |
-
2008
- 2008-05-09 JP JP2008123105A patent/JP4943373B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2009272520A (ja) | 2009-11-19 |
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