JP4926726B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4926726B2 JP4926726B2 JP2007005407A JP2007005407A JP4926726B2 JP 4926726 B2 JP4926726 B2 JP 4926726B2 JP 2007005407 A JP2007005407 A JP 2007005407A JP 2007005407 A JP2007005407 A JP 2007005407A JP 4926726 B2 JP4926726 B2 JP 4926726B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- die pad
- semiconductor device
- solder
- stress relaxation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 229910000679 solder Inorganic materials 0.000 claims description 71
- 238000007789 sealing Methods 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 25
- 239000000956 alloy Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 4
- 229910000833 kovar Inorganic materials 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 13
- 229910000881 Cu alloy Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000005304 joining Methods 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
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- 238000001816 cooling Methods 0.000 description 4
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- 229910001111 Fine metal Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- -1 moisture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/11—Device type
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
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- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Die Bonding (AREA)
Description
まず、本発明の半導体装置の第1実施形態について、図1、図2、及び図3を参照しながら説明する。図1は、第1実施形態の半導体装置の構成を示す概略平面図である。なお、図1は、半導体装置を半導体チップが搭載される側から見た図であり、便宜上半導体チップ等を封止する封止用樹脂が透明であるものとして描いている。また、図2は、第1実施形態の半導体装置の構成を示す概略断面図で、図1のA−A位置における断面図である。図3は、第1実施形態の半導体装置を製造する際に用いるリードフレームの構成を示す概略平面図である。
次に、本発明の半導体装置の第2実施形態について説明する。図6は、第2実施形態の半導体装置の構成を示す概略断面図である。第2実施形態の半導体装置51を説明するにあたって、第1実施形態の半導体装置1と重複する部分については同一の符号を付し、特に説明の必要がない場合にはその説明を省略する。
2 半導体チップ
3 ダイパッド
4 インナーリード
5 アウターリード
6 応力緩和層
7 封止体
8 はんだ層
Claims (6)
- 半導体チップと、
前記半導体チップの裏面全体を第1はんだで接合して搭載するダイパッドと、
前記半導体チップと電気的に導通される複数のリードと、
前記ダイパッドの前記半導体チップが搭載される面の裏面に第2はんだで接合されて前記半導体チップに加わる応力を緩和する応力緩和層と、
少なくとも前記半導体チップを封止する封止体と、
を備え、
前記ダイパッドが前記複数のリードよりも下方に位置し、
前記応力緩和層の表面が前記封止体の表面と面一となって露出し、
前記応力緩和層が前記ダイパッドと接合される接合面の大きさは、前記半導体チップが前記ダイパッドと接合される接合面の大きさとほぼ等しいことを特徴とする半導体装置。 - 前記ダイパッドの厚みが100〜150μmであることを特徴とする請求項1に記載の半導体装置。
- 前記第1はんだ及び前記第2はんだが、高融点はんだ又は鉛フリーはんだであることを特徴とする請求項1又は請求項2に記載の半導体装置。
- 前記応力緩和層の材料が、42アロイ材、コバール材、シリコンのうちのいずれか1つであることを特徴とする請求項1〜請求項3のいずれかに記載の半導体装置。
- 前記半導体チップが、パワー系の半導体チップであることを特徴とする請求項1〜請求項4のいずれかに記載の半導体装置。
- 前記半導体チップと前記ダイパッドとを接合する第1はんだと、前記ダイパッドと前記応力緩和層とを接合する第2はんだとが同一であることを特徴とする請求項1〜請求項5のいずれかに記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007005407A JP4926726B2 (ja) | 2007-01-15 | 2007-01-15 | 半導体装置 |
TW096145207A TW200839966A (en) | 2007-01-15 | 2007-11-28 | Semiconductor Device |
KR1020080002924A KR20080067289A (ko) | 2007-01-15 | 2008-01-10 | 반도체 장치 |
US11/972,945 US20080169538A1 (en) | 2007-01-15 | 2008-01-11 | Semiconductor Device |
CN2008100021214A CN101226903B (zh) | 2007-01-15 | 2008-01-15 | 半导体装置 |
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JP2007005407A JP4926726B2 (ja) | 2007-01-15 | 2007-01-15 | 半導体装置 |
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JP2008172115A JP2008172115A (ja) | 2008-07-24 |
JP4926726B2 true JP4926726B2 (ja) | 2012-05-09 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007005407A Expired - Fee Related JP4926726B2 (ja) | 2007-01-15 | 2007-01-15 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080169538A1 (ja) |
JP (1) | JP4926726B2 (ja) |
KR (1) | KR20080067289A (ja) |
CN (1) | CN101226903B (ja) |
TW (1) | TW200839966A (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6214433B2 (ja) | 2013-10-04 | 2017-10-18 | 株式会社フジクラ | 半導体圧力センサ |
DE102014111908A1 (de) * | 2014-08-20 | 2016-02-25 | Infineon Technologies Austria Ag | Hybrid-Leadframe und Verfahren zum Herstellen desselben |
KR101675138B1 (ko) * | 2015-02-04 | 2016-11-10 | 현대모비스 주식회사 | 전력반도체 모듈 및 이의 제조방법 |
CN110858574A (zh) * | 2018-08-22 | 2020-03-03 | 珠海格力电器股份有限公司 | 一种超薄芯片的封装结构 |
CN113299616A (zh) * | 2021-05-06 | 2021-08-24 | 浙江里阳半导体有限公司 | 半导体器件的制造方法 |
WO2024084899A1 (ja) * | 2022-10-17 | 2024-04-25 | ローム株式会社 | 半導体装置 |
CN116613118A (zh) * | 2023-07-19 | 2023-08-18 | 日月新半导体(苏州)有限公司 | 集成电路封装产品以及集成电路导线框架 |
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JPS6352451A (ja) * | 1986-08-22 | 1988-03-05 | Hitachi Vlsi Eng Corp | レジン封止型半導体装置 |
JPS62234336A (ja) * | 1986-09-19 | 1987-10-14 | Hitachi Ltd | 半導体ペレツトのハンダ付け方法 |
JPS63127129A (ja) * | 1986-11-17 | 1988-05-31 | Matsushita Electric Ind Co Ltd | 光ビ−ム径測定装置 |
US5012323A (en) * | 1989-11-20 | 1991-04-30 | Micron Technology, Inc. | Double-die semiconductor package having a back-bonded die and a face-bonded die interconnected on a single leadframe |
US5041902A (en) * | 1989-12-14 | 1991-08-20 | Motorola, Inc. | Molded electronic package with compression structures |
JPH04340751A (ja) * | 1991-05-17 | 1992-11-27 | Nec Kyushu Ltd | 樹脂封止型半導体装置 |
JPH05299445A (ja) * | 1992-04-20 | 1993-11-12 | Nec Corp | 樹脂封止型半導体装置 |
US5608267A (en) * | 1992-09-17 | 1997-03-04 | Olin Corporation | Molded plastic semiconductor package including heat spreader |
JPH06295970A (ja) * | 1993-04-08 | 1994-10-21 | Seiko Epson Corp | 半導体装置及び半導体装置製造方法 |
JP3688760B2 (ja) * | 1995-07-31 | 2005-08-31 | ローム株式会社 | 樹脂パッケージ型半導体装置およびその製造方法 |
JP3269745B2 (ja) * | 1995-01-17 | 2002-04-02 | 株式会社日立製作所 | モジュール型半導体装置 |
US5796159A (en) * | 1995-11-30 | 1998-08-18 | Analog Devices, Inc. | Thermally efficient integrated circuit package |
JP3494901B2 (ja) * | 1998-09-18 | 2004-02-09 | シャープ株式会社 | 半導体集積回路装置 |
US6188130B1 (en) * | 1999-06-14 | 2001-02-13 | Advanced Technology Interconnect Incorporated | Exposed heat spreader with seal ring |
JP3543681B2 (ja) * | 1999-06-28 | 2004-07-14 | 松下電器産業株式会社 | リードフレーム |
JP2001274316A (ja) * | 2000-03-23 | 2001-10-05 | Hitachi Ltd | 半導体装置及びその製造方法 |
SG102591A1 (en) * | 2000-09-01 | 2004-03-26 | Micron Technology Inc | Dual loc semiconductor assembly employing floating lead finger structure |
US6858922B2 (en) * | 2001-01-19 | 2005-02-22 | International Rectifier Corporation | Back-to-back connected power semiconductor device package |
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TWI267959B (en) * | 2002-11-27 | 2006-12-01 | Siliconware Precision Industries Co Ltd | Semiconductor package with chip-supporting member |
JP2006222406A (ja) * | 2004-08-06 | 2006-08-24 | Denso Corp | 半導体装置 |
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SG131789A1 (en) * | 2005-10-14 | 2007-05-28 | St Microelectronics Asia | Semiconductor package with position member and method of manufacturing the same |
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-
2007
- 2007-01-15 JP JP2007005407A patent/JP4926726B2/ja not_active Expired - Fee Related
- 2007-11-28 TW TW096145207A patent/TW200839966A/zh unknown
-
2008
- 2008-01-10 KR KR1020080002924A patent/KR20080067289A/ko not_active Application Discontinuation
- 2008-01-11 US US11/972,945 patent/US20080169538A1/en not_active Abandoned
- 2008-01-15 CN CN2008100021214A patent/CN101226903B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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US20080169538A1 (en) | 2008-07-17 |
CN101226903A (zh) | 2008-07-23 |
JP2008172115A (ja) | 2008-07-24 |
KR20080067289A (ko) | 2008-07-18 |
TW200839966A (en) | 2008-10-01 |
CN101226903B (zh) | 2012-08-08 |
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