JP4921948B2 - 薄膜パターンの製造装置及び方法 - Google Patents
薄膜パターンの製造装置及び方法 Download PDFInfo
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Description
まず、図1に示されているリバースレジストプリンティング装置は、ポリジメチルシロキサン(PDMS)からなるブランケット15が巻回されたロール状の印刷ローラ装置10と、エッチングレジスト溶液が噴射されるエッチングレジスト溶液噴射装置12と、形成しようとする薄膜パターンと同様の形状の溝20aと、溝20aを除いた突出部20bを有する凹版印刷版20を備える。
以下、図3ないし図5を参照し、本発明の望ましい実施例について説明する。
図3を参照すれば、ブランケット15の上にコーティングされたエッチングレジスト溶液14aの内部構造において、界面活性剤の親水性基22の殆どは、低い表面エネルギーを有するブランケット15方向に向け、界面活性剤の疎水性基23に当たるフルオリネート基は、空気の方に向ける構造を有している。ここで、表面エネルギー(γ)とは、空気と界面を成すために必要なエネルギーを言い、表面エネルギー(γ)が高い物質は、空気と界面を成すことが困難であり、自分と接触する液状または固形状などの相対面の表面エネルギー(γ)が低いほど相手面と界面を成そうとする性質が強い。即ち、表面エネルギー(γ)が高い物質は、その表面に表面エネルギー(γ)が低い流動性物質が塗布されると、その流動性物質を広く広げる。また、表面エネルギー(γ)が低い物質は、相手物質と界面を成すことが容易でないため、相手物質との分離が容易であり、空気との接触性質が強い。このような表面エネルギー(γ)は、数式1のように、非極性表面エネルギー(γd)と、極性表面エネルギー(γp)との和で表される。
[数式1]
γ =γd +γp
[数式2]
W=2(γd1*γd2)1/2+2(γp1*γp2)1/2
図5を参照すると、ブランケット15の上にコーティングされたエッチングレジスト溶液14aの内部構造において、界面活性剤は、疎水性基23に当たるフルオリネート基とハイドロカーボン鎖に区分される。ここで、ハイドロカーボン鎖としては、例えば、エチレンオキサイド(CH 2 O)、アミン(CH2N)などが挙げられる。このような構造を有する本発明における界面活性剤は、部分的にフルオリネート化された界面活性剤であって、界面活性剤そのものの表面エネルギーが、高分子鎖に似た表面エネルギー(約35mN/m)を有するため、如何なる方向性を有せずにランダムに位置することとなる。疎水性基は、ブランケット15の上にコーティングされたエッチングレジスト溶液14aの内部構造において、大気に接することなく、これによりブランケットから印刷版への転送特性が従来技術よりも有効に働く。
12:噴射装置
20:印刷版
14a:エッチングレジスト溶液
30:基板
15:ブランケット
Claims (7)
- ブランケットが巻回されたロール状の印刷ローラ装置と、
前記印刷ローラ装置の周辺に位置し、前記ブランケットにエッチングレジスト溶液を噴射する噴射装置と、
所望の薄膜状の溝と、前記溝を除いた突出部が形成された凹版印刷版とを備え、
前記エッチングレジスト溶液は、4〜20%程度のベースポリマーと、40〜60%程度のキャリアソルベントと、20〜40%程度のプリンティングソルベント及び0.05〜1%程度の界面活性剤と、を含んで、前記界面活性剤は[CF3(CF2)4(CH2CH2O)10又はCF3(CF2)5(CH2CH2O)14]のいずれか一つであることと、
前記界面活性剤の前記エチレンオキサイド(CH 2 CH 2 O)及びフルオリネート基の分子は、前記エッチングレジスト溶液内でランダムに分布すること及び前記エッチングレジスト溶液と印刷版との接着力は、前記エッチングレジスト溶液とブランケットとの接着力より強いことを特徴とする薄膜パターンの製造装置。 - 前記ベースポリマーは、ノボラック、PMMA(ポリメチルメタクリレート)の何れか一つであることを特徴とする請求項1に記載の薄膜パターンの製造装置。
- 前記キャリアソルベントは、アルコール系であることを特徴とする請求項1に記載の薄膜パターンの製造装置。
- 前記プリンティングソルベントは、NMP(N−メチルピロリドン)、エチルベンゾエイト、トリイソプロピルベンゼンの少なくとも何れか一つであることを特徴とする請求項1に記載の薄膜パターンの製造装置。
- ブランケットが巻回されたロール状の印刷ローラ装置を設ける段階と、
前記ブランケットに、エチレンオキサイドフルオリネートポリマー系物質からなる界面活性剤を含むエッチングレジスト溶液をコーティングする段階と、
溝と、前記溝を除いた突出部が形成された凹版印刷版を設ける段階と、
前記印刷版の突出部の上のみに前記エッチングレジスト溶液を転写させ、前記溝と対応する領域へのエッチングレジスト溶液は、前記印刷ローラ装置に残留させる段階と、を含むことを特徴とする薄膜パターンの製造方法において、
前記エッチングレジスト溶液は、4〜20%程度のベースポリマーと、40〜60%程度のキャリアソルベントと、20〜40%程度のプリンティングソルベント及び0.05〜1%程度の界面活性剤と、を含んで、前記界面活性剤は[CF3(CF2)4(CH2CH2O)10又はCF3(CF2)5(CH2CH2O)14]のいずれか一つであることと、
前記界面活性剤の前記エチレンオキサイド(CH 2 CH 2 O)及びフルオリネート基の分子は、前記エッチングレジスト溶液内でランダムに分布すること及び前記エッチングレジスト溶液と印刷版との接着力は、前記エッチングレジスト溶液とブランケットとの接着力より強いことを特徴とする薄膜パターンの製造方法。 - 前記印刷版の突出部の上に、前記エッチングレジスト溶液を転写させる段階は、前記エッチングレジスト溶液がコーティングされた印刷ローラ装置を回転さ、且つ前記エッチングレジスト溶液を前記突出部の表面に接触させる段階をさらに含むことを特徴とする請求項5に記載の薄膜パターンの製造方法。
- 薄膜層が形成された基板を設ける段階と、
前記印刷ローラ装置に残留するエッチングレジスト溶液を前記薄膜層の上に転写させ、前記印刷版の溝と同様の形状のエッチングレジスト溶液を前記薄膜層の上に形成する段階と、をさらに含むことを特徴とする請求項5に記載の薄膜パターンの製造方法。
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CN104854684B (zh) * | 2012-11-14 | 2017-10-10 | 太阳化学公司 | 用于制造背面钝化太阳能电池的组合物和方法 |
JP2014226876A (ja) * | 2013-05-24 | 2014-12-08 | ソニー株式会社 | ブランケットおよび印刷方法ならびに表示装置および電子機器の製造方法 |
JP2015159277A (ja) * | 2014-01-23 | 2015-09-03 | パナソニック株式会社 | 電子デバイスの製造方法 |
KR101919122B1 (ko) * | 2014-08-12 | 2018-11-15 | 주식회사 제우스 | 공정 분리형 기판 처리장치 및 처리방법 |
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JP2008004911A (ja) | 2008-01-10 |
US9091873B2 (en) | 2015-07-28 |
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