JP4919803B2 - 半導体撮像素子のパッケージの製造方法 - Google Patents
半導体撮像素子のパッケージの製造方法 Download PDFInfo
- Publication number
- JP4919803B2 JP4919803B2 JP2006532082A JP2006532082A JP4919803B2 JP 4919803 B2 JP4919803 B2 JP 4919803B2 JP 2006532082 A JP2006532082 A JP 2006532082A JP 2006532082 A JP2006532082 A JP 2006532082A JP 4919803 B2 JP4919803 B2 JP 4919803B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- manufacturing
- layer
- package
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 192
- 238000003384 imaging method Methods 0.000 title claims description 71
- 238000004519 manufacturing process Methods 0.000 title claims description 56
- 239000010410 layer Substances 0.000 claims description 132
- 229910052751 metal Inorganic materials 0.000 claims description 106
- 239000002184 metal Substances 0.000 claims description 106
- 238000000034 method Methods 0.000 claims description 62
- 239000010409 thin film Substances 0.000 claims description 41
- 238000007747 plating Methods 0.000 claims description 37
- 239000010408 film Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 35
- 229920000642 polymer Polymers 0.000 claims description 29
- 229920001002 functional polymer Polymers 0.000 claims description 28
- 229920001940 conductive polymer Polymers 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 239000012790 adhesive layer Substances 0.000 claims description 17
- 230000000903 blocking effect Effects 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 229920005992 thermoplastic resin Polymers 0.000 claims description 2
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
- 230000008569 process Effects 0.000 description 30
- 238000000151 deposition Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000002861 polymer material Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000037303 wrinkles Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010137 moulding (plastic) Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
conductive adhesive:ACA)、又は半硬化して所定形状を有する固体状の異方性導電フィルム(anisotropic
conductive film:ACF)を適用することができる。
Claims (18)
- 半導体撮像素子の表面に絶縁膜を形成した後、前記半導体撮像素子の縁部に形成された複数の電極パッドが露出するように、前記絶縁膜を選択的にエッチングする工程と、
前記半導体撮像素子の中央に形成されたイメージセンシング部上に、少なくとも1つの機能性ポリマー層を形成する工程と、
前記機能性ポリマー層が形成されたイメージセンシング部上に応力遮断用ポリマー層を形成する工程と、
前記の結果物の上部に少なくとも1つの金属薄膜層を形成する工程と、
前記金属薄膜層の上部に感光膜を形成した後、前記半導体撮像素子の電極パッドが形成された領域の金属薄膜層が露出するように露光及び現像する工程と、
前記半導体撮像素子の電極パッドが形成された領域に露出した金属薄膜層の上部にバンプを形成する工程と、
前記感光膜を除去した後、前記バンプをマスクとして適用して前記金属薄膜層をエッチングする工程と、
前記機能性ポリマー層が形成されたイメージセンシング部上に形成された応力遮断用ポリマー層を除去する工程と、
を含むことを特徴とする半導体撮像素子のパッケージの製造方法。 - 前記機能性ポリマー層が、積層された平坦化層、カラーフィルタ層、マイクロレンズからなることを特徴とする請求項1に記載の半導体撮像素子のパッケージの製造方法。
- 前記応力遮断用ポリマー層が、感光膜を塗布、露光、及び現像して形成されることを特徴とする請求項1に記載の半導体撮像素子のパッケージの製造方法。
- 前記機能性ポリマー層と前記応力遮断用ポリマー層とが、順次形成された後、前記応力遮断用ポリマー層として適用される感光膜の塗布、露光、及び現像により同時にパターニングされて、前記イメージセンシング部上に形成されることを特徴とする請求項1に記載の半導体撮像素子のパッケージの製造方法。
- 前記金属薄膜層が、積層された金属接着層、めっき用金属層からなることを特徴とする請求項1に記載の半導体撮像素子のパッケージの製造方法。
- 前記金属接着層が、Ti、Al、又はCr材質の金属材質、或いはTi、Al、及びCr材質のうち少なくとも1つを含有する合金材質で形成されることを特徴とする請求項5に記載の半導体撮像素子のパッケージの製造方法。
- 前記金属接着層が、100Å〜5000Åの厚さで形成されることを特徴とする請求項5に記載の半導体撮像素子のパッケージの製造方法。
- 前記めっき用金属層が、Au、Cu、又はNi材質の金属材質、或いはAu、Cu、及びNi材質のうち少なくとも1つを含有する合金材質で形成されることを特徴とする請求項5に記載の半導体撮像素子のパッケージの製造方法。
- 前記めっき用金属層が、100Å〜5000Åの厚さで形成されることを特徴とする請求項5に記載の半導体撮像素子のパッケージの製造方法。
- 前記バンプが、Au材質、半田材質、又はCu材質から選択されたいずれか1つの材質で形成されることを特徴とする請求項1に記載の半導体撮像素子のパッケージの製造方法。
- 前記半導体撮像素子の中央に備えられたイメージセンシング部が露出するように、複数の回路パターンが実装されたプリント基板上に開口部を形成する工程と、
前記開口部の縁部に沿って基板電極パッドを形成する工程と、
前記開口部の縁部に沿って異方性導電ポリマーを形成する工程と、
前記異方性導電ポリマーを、前記プリント基板に形成された基板電極パッドと前記半導体撮像素子に形成されたバンプとの間に介在させた状態で、熱圧着して硬化させる工程と、
前記プリント基板の開口部が覆われるように、前記プリント基板の開口部の縁部にガラスフィルタを取り付ける工程と、
前記半導体撮像素子のイメージセンシング部の上部にレンズユニットを装着する工程と、
をさらに含むことを特徴とする請求項1に記載の半導体撮像素子のパッケージの製造方法。 - 前記異方性導電ポリマーが、液体状の異方性導電接着剤、又は半硬化して所定形状を有する固体状の異方性導電フィルムで形成されることを特徴とする請求項11に記載の半導体撮像素子のパッケージの製造方法。
- 前記異方性導電ポリマーが、熱硬化性樹脂、熱可塑性樹脂、又はこれらが組み合わせられた樹脂を主成分とし、均一に分布した球形又は角形の導電性金属ボールを含有することを特徴とする請求項11に記載の半導体撮像素子のパッケージの製造方法。
- 前記導電性金属ボールが、Au、Ni、Ag、又はCuから選択されたいずれか1つの材質で形成されることを特徴とする請求項13に記載の半導体撮像素子のパッケージの製造方法。
- 前記導電性金属ボールが、0.5μm〜10μmの粒径で形成されることを特徴とする請求項13に記載の半導体撮像素子のパッケージの製造方法。
- 前記異方性導電ポリマーを熱圧着して硬化させる工程は、数十℃〜200℃の温度で熱圧着した後、数秒〜数分間維持して硬化させることを特徴とする請求項11に記載の半導体撮像素子のパッケージの製造方法。
- 前記異方性導電ポリマーを熱圧着して硬化させた後、前記異方性導電ポリマーを再加熱して再硬化させる工程をさらに含むことを特徴とする請求項11に記載の半導体撮像素子のパッケージの製造方法。
- 前記プリント基板の開口部が覆われるように、前記プリント基板の開口部の縁部にガラスフィルタを取り付ける工程は、不活性気体雰囲気で実施されることを特徴とする請求項11に記載の半導体撮像素子のパッケージの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030068283A KR100539082B1 (ko) | 2003-10-01 | 2003-10-01 | 반도체 촬상소자의 패키지 구조 및 그 제조방법 |
KR10-2003-0068283 | 2003-10-01 | ||
PCT/KR2004/002507 WO2005031875A1 (en) | 2003-10-01 | 2004-09-30 | Structure of package for semiconductor image pickup device and fabrication method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007507880A JP2007507880A (ja) | 2007-03-29 |
JP4919803B2 true JP4919803B2 (ja) | 2012-04-18 |
Family
ID=34386660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006532082A Expired - Fee Related JP4919803B2 (ja) | 2003-10-01 | 2004-09-30 | 半導体撮像素子のパッケージの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7491572B2 (ja) |
JP (1) | JP4919803B2 (ja) |
KR (1) | KR100539082B1 (ja) |
CN (1) | CN100524789C (ja) |
WO (1) | WO2005031875A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1624493A3 (fr) * | 2004-07-23 | 2006-09-13 | Stmicroelectronics Sa | Procédé de fabrication de module optique pour boîtier semiconducteur à capteur optique |
JP4382030B2 (ja) * | 2005-11-15 | 2009-12-09 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
KR101181629B1 (ko) | 2006-01-03 | 2012-09-10 | 엘지이노텍 주식회사 | 카메라 모듈 및 제조 방법 |
KR100775136B1 (ko) * | 2006-04-19 | 2007-11-08 | 삼성전기주식회사 | 이미지센서 모듈용 웨이퍼 레벨 칩 스케일 패키지 및 이의제조방법 및 칩 스케일 패키지를 이용한 카메라 모듈 |
CN101303443A (zh) * | 2007-05-11 | 2008-11-12 | 鸿富锦精密工业(深圳)有限公司 | 相机模组及其组装方法 |
US8071953B2 (en) | 2008-04-29 | 2011-12-06 | Redlen Technologies, Inc. | ACF attachment for radiation detector |
KR101070022B1 (ko) * | 2009-09-16 | 2011-10-04 | 삼성전기주식회사 | 다층 세라믹 회로 기판, 다층 세라믹 회로 기판 제조방법 및 이를 이용한 전자 디바이스 모듈 |
US8138019B2 (en) * | 2009-11-03 | 2012-03-20 | Toyota Motor Engineering & Manufactruing North America, Inc. | Integrated (multilayer) circuits and process of producing the same |
US9197796B2 (en) * | 2011-11-23 | 2015-11-24 | Lg Innotek Co., Ltd. | Camera module |
CN105448946A (zh) * | 2016-01-02 | 2016-03-30 | 北京工业大学 | 一种影像传感芯片封装结构与实现工艺 |
JP2017143092A (ja) * | 2016-02-08 | 2017-08-17 | ソニー株式会社 | ガラスインタポーザモジュール、撮像装置、および電子機器 |
KR102556023B1 (ko) * | 2016-02-26 | 2023-07-17 | 삼성디스플레이 주식회사 | 감광성 박막 소자 및 이를 포함하는 생체 정보 감지 장치 |
JP2017175047A (ja) | 2016-03-25 | 2017-09-28 | ソニー株式会社 | 半導体装置、固体撮像素子、撮像装置、および電子機器 |
JP6949515B2 (ja) * | 2017-03-15 | 2021-10-13 | ソニーセミコンダクタソリューションズ株式会社 | カメラモジュール及びその製造方法、並びに、電子機器 |
CN114878877A (zh) * | 2022-06-02 | 2022-08-09 | 中国农业大学 | 探针卡及晶圆测试方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04137663A (ja) * | 1990-09-28 | 1992-05-12 | Toshiba Corp | 固体撮像装置 |
US5792374A (en) * | 1996-05-15 | 1998-08-11 | Hualon Microelectronics Corporation | Method of fabricating a color image sensor from a gray scale image sensor |
JPH10307376A (ja) * | 1997-03-05 | 1998-11-17 | Fuji Photo Film Co Ltd | ハロゲン化銀感光材料および画像形成方法 |
US6753922B1 (en) * | 1998-10-13 | 2004-06-22 | Intel Corporation | Image sensor mounted by mass reflow |
JP2001068654A (ja) | 1999-06-25 | 2001-03-16 | Sony Corp | 固体撮像素子および固体撮像素子の製造方法 |
JP3607160B2 (ja) | 2000-04-07 | 2005-01-05 | 三菱電機株式会社 | 撮像装置 |
JP2002033468A (ja) * | 2000-07-18 | 2002-01-31 | Canon Inc | 固体撮像装置 |
US7139028B2 (en) | 2000-10-17 | 2006-11-21 | Canon Kabushiki Kaisha | Image pickup apparatus |
JP2002246582A (ja) * | 2000-10-26 | 2002-08-30 | Canon Inc | 放射線検出装置、その製造方法及びシステム |
KR100494023B1 (ko) * | 2001-11-21 | 2005-06-16 | 주식회사 네패스 | 반도체 촬상소자 패키지 및 그 제조방법 |
KR20030069321A (ko) * | 2002-02-19 | 2003-08-27 | 주식회사 씨큐브디지탈 | 플립칩 범핑을 이용한 반도체 촬상소자 패키지 및 그제조방법 |
KR100687069B1 (ko) * | 2005-01-07 | 2007-02-27 | 삼성전자주식회사 | 보호판이 부착된 이미지 센서 칩과 그의 제조 방법 |
-
2003
- 2003-10-01 KR KR1020030068283A patent/KR100539082B1/ko not_active IP Right Cessation
-
2004
- 2004-09-30 JP JP2006532082A patent/JP4919803B2/ja not_active Expired - Fee Related
- 2004-09-30 US US10/574,316 patent/US7491572B2/en not_active Expired - Fee Related
- 2004-09-30 WO PCT/KR2004/002507 patent/WO2005031875A1/en active Application Filing
- 2004-09-30 CN CNB2004800288579A patent/CN100524789C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100539082B1 (ko) | 2006-01-10 |
WO2005031875A1 (en) | 2005-04-07 |
US20070085180A1 (en) | 2007-04-19 |
KR20050032256A (ko) | 2005-04-07 |
JP2007507880A (ja) | 2007-03-29 |
CN100524789C (zh) | 2009-08-05 |
CN1864264A (zh) | 2006-11-15 |
US7491572B2 (en) | 2009-02-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10446504B2 (en) | Chip package and method for forming the same | |
US9502455B2 (en) | Optical apparatus having resin encased stacked optical and semiconductor devices | |
JP4919803B2 (ja) | 半導体撮像素子のパッケージの製造方法 | |
KR100738653B1 (ko) | 이미지 센서 모듈용 웨이퍼 레벨 칩 사이즈 패키지 및 이의제조방법 | |
JP3503133B2 (ja) | 電子デバイス集合体と電子デバイスの接続方法 | |
JP4611235B2 (ja) | イメージセンサモジュール及びその製造方法 | |
US8193624B1 (en) | Semiconductor device having improved contact interface reliability and method therefor | |
US20060171698A1 (en) | Chip scale image sensor module and fabrication method of same | |
JP2006210888A (ja) | 半導体パッケージ及びその製造方法 | |
JP2008228308A (ja) | ビルドインパッケージキャビティを有するイメージセンサモジュールおよびその方法 | |
KR100976812B1 (ko) | 전자 소자 패키지 및 그 제조 방법 | |
JP2008235869A (ja) | イメージセンサモジュール構造および半導体デバイスパッケージの形成方法 | |
WO2008112101A2 (en) | Packaging methods for imager devices | |
JP6993726B2 (ja) | 撮像アセンブリ及びそのパッケージング方法、レンズモジュール、電子機器 | |
JP2008205429A (ja) | イメージセンサパッケージおよびその形成方法 | |
KR101142347B1 (ko) | 포토센서 패키지 모듈 및 제작 방법 | |
US10566369B2 (en) | Image sensor with processor package | |
WO2020090601A1 (ja) | 半導体パッケージ用配線基板及び半導体パッケージ用配線基板の製造方法 | |
US9530818B2 (en) | Image sensor integrated circuit package with reduced thickness | |
JP2009516369A (ja) | チップアセンブリ及びそのチップアセンブリの製造方法 | |
US20040135919A1 (en) | Camera module and method of fabricating the same | |
JP7004335B2 (ja) | 撮像アセンブリ及びそのパッケージング方法、レンズモジュール、電子機器 | |
JP3589928B2 (ja) | 半導体装置 | |
KR20030069321A (ko) | 플립칩 범핑을 이용한 반도체 촬상소자 패키지 및 그제조방법 | |
KR100673354B1 (ko) | 반도체 촬상소자 패키지 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070829 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110913 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111209 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120110 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120131 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4919803 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150210 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |