JP4918366B2 - 送受信器における電力消費を削減する、電力増幅器の制御 - Google Patents
送受信器における電力消費を削減する、電力増幅器の制御 Download PDFInfo
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- JP4918366B2 JP4918366B2 JP2006552622A JP2006552622A JP4918366B2 JP 4918366 B2 JP4918366 B2 JP 4918366B2 JP 2006552622 A JP2006552622 A JP 2006552622A JP 2006552622 A JP2006552622 A JP 2006552622A JP 4918366 B2 JP4918366 B2 JP 4918366B2
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- 238000000034 method Methods 0.000 claims description 29
- 230000005540 biological transmission Effects 0.000 claims description 25
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- 230000008054 signal transmission Effects 0.000 claims description 10
- 230000003321 amplification Effects 0.000 claims description 6
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 description 17
- 230000004044 response Effects 0.000 description 11
- 230000009022 nonlinear effect Effects 0.000 description 7
- 238000004891 communication Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 4
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229920005994 diacetyl cellulose Polymers 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
- H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/372—Noise reduction and elimination in amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/543—A transmission line being used as coupling element between two amplifying stages
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B1/0475—Circuits with means for limiting noise, interference or distortion
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Amplifiers (AREA)
- Transceivers (AREA)
- Transmitters (AREA)
Description
電力増幅器56は、VGA54から供給される信号の電力を増幅し、それによって、増幅された送信信号を生成するよう動作可能である。例示的な実施例では、電力増幅器56は、複数のカスケード段を備え、一般に、その入力電力と出力電力との間での線形性を必要とする。本発明の原理によれば、電力増幅器56の最終段のバイアス電流を、電力増幅器56の非線形効果に帰することができる3次相互変調積の検出電力レベルに基づいて送信モード中に適応的に制御することができる。電力増幅器56のこのバイアス電流を制御することによって、本発明は効果的には、適用可能な出力電力スペクトル・マスクによるその線形性要件も満たす一方でその電力消費を削減することができる。電力増幅器56の更なる詳細は以下本明細書に記載する。
Claims (12)
- 別個の時間間隔中に信号を受信し、信号を送信する受信連鎖及び送信連鎖を備える装置(100)であって、
送信信号の信号送信手段(10)への流れ、又は受信信号の前記信号送信手段(10)からの流れを供給するスイッチング手段(12)と、
前記送信信号を増幅する電力増幅手段(56)と
を備え、
該電力増幅手段(56)に関連した3次相互変調積の電力レベル推定に基づいて前記電力増幅手段(56)のバイアス電流を制御する制御手段(30)を更に備え、前記相互変調積は、送信モード中に信号受信エレメントへ前記スイッチング手段(12)を通って流れる漏れ信号に含まれることを特徴とする装置。 - 請求項1記載の装置(100)であって、前記信号送信手段(10)は前記送信信号を無線で送信することを特徴とする装置。
- 請求項1記載の装置(100)であって、
前記制御手段(30)は、前記送信モード及び受信モードの間にディジタル・フィルタリング動作を行うディジタル・フィルタリング手段(32)を備えることを特徴とする装置。 - 請求項3記載の装置(100)であって、前記ディジタル・フィルタリング手段(32)は、前記送信モード中に高域通過ディジタル・フィルタリング動作を行い、前記受信モード中に低域通過ディジタル・フィルタリング動作を行うことを特徴とする装置。
- 請求項1記載の装置(100)であって、前記制御手段(30)は、前記送受信器装置(100)の送信電力レベルが所定の閾値レベルを超える場合にのみ、前記電力増幅手段(56)の前記バイアス電流を制御することを特徴とする装置。
- 別個の時間間隔中に信号を受信し、信号を送信する受信連鎖及び送信連鎖と、送信信号の信号送信手段(10)への流れ、又は受信信号の前記信号送信手段(10)からの流れを供給するスイッチング手段(12)と、前記送信信号を増幅する電力増幅手段(56)とを備える送受信器装置(100)を制御する方法(900)であって、
該電力増幅手段(56)に関連し、送信モード中に信号受信エレメントへ前記スイッチング手段(12)を通って流れる漏れ信号に含まれる3次相互変調積の電力レベル推定を検出する工程(950)と、
前記電力増幅手段(56)のバイアス電流を制御する工程(960、970)と
を備えることを特徴とする方法。 - 請求項6記載の方法であって、累算器レベルが基準レベルより低い場合に前記バイアス電流が減らされ、前記累算器レベルが前記基準レベルよりも高い場合に前記バイアス電流が増やされ、前記累算器レベルは、3次相互変調積の前記電力レベルの推定であることを特徴とする方法。
- 請求項6記載の方法であって、前記送受信器装置(100)の送信電力レベルが所定の閾値レベルを超える場合にのみ前記バイアス電流が修正されることを特徴とする方法。
- 請求項6乃至8の何れかに記載の方法(900)であって、
信号送信エレメント(10)を用いて送信信号を無線で送信する工程を更に備えることを特徴とする方法。 - 請求項6記載の方法(900)であって、
前記送受信器装置の送信電力レベルが所定の閾値レベル(910)を超える場合に前記検出する工程及び前記制御する工程(950乃至970)が行われることを特徴とする方法。 - 請求項1乃至5記載の装置(100)であって、
制御手段は、コントローラなどの単一の構成部分を用いて構成されることを特徴とする装置。 - 請求項1乃至5記載の装置(100)であって、
スイッチング手段は、スイッチなどの単一の構成部分を用いて構成されることを特徴とする装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04290406.0 | 2004-02-13 | ||
EP04290406A EP1564897A1 (en) | 2004-02-13 | 2004-02-13 | Control of a power amplifier for reducing power consumption in a transceiver |
PCT/EP2005/050581 WO2005081414A1 (en) | 2004-02-13 | 2005-02-09 | Control of a power amplifier for reducing power consumption in a transceiver |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007522747A JP2007522747A (ja) | 2007-08-09 |
JP4918366B2 true JP4918366B2 (ja) | 2012-04-18 |
Family
ID=34684785
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006552622A Active JP4918366B2 (ja) | 2004-02-13 | 2005-02-09 | 送受信器における電力消費を削減する、電力増幅器の制御 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7580722B2 (ja) |
EP (2) | EP1564897A1 (ja) |
JP (1) | JP4918366B2 (ja) |
KR (1) | KR101158311B1 (ja) |
CN (1) | CN1918797A (ja) |
DE (1) | DE602005016084D1 (ja) |
WO (1) | WO2005081414A1 (ja) |
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KR100835163B1 (ko) * | 2005-08-23 | 2008-06-04 | 삼성전자주식회사 | 시분할복신 무선통신시스템에서 수신회로 보호 장치 |
US7911272B2 (en) | 2007-06-19 | 2011-03-22 | Parkervision, Inc. | Systems and methods of RF power transmission, modulation, and amplification, including blended control embodiments |
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JP5135815B2 (ja) * | 2006-02-14 | 2013-02-06 | ミツミ電機株式会社 | 半導体集積回路装置 |
US7937106B2 (en) | 2006-04-24 | 2011-05-03 | ParkerVision, Inc, | Systems and methods of RF power transmission, modulation, and amplification, including architectural embodiments of same |
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JP6894370B2 (ja) * | 2015-06-15 | 2021-06-30 | 日本電気株式会社 | 低雑音増幅装置、方法、および減衰量調整プログラム |
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CN110504986B (zh) * | 2019-09-18 | 2021-05-28 | 京信通信***(中国)有限公司 | 收发隔离电路、tdd无线收发电路和基站 |
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2004
- 2004-02-13 EP EP04290406A patent/EP1564897A1/en not_active Withdrawn
-
2005
- 2005-02-09 KR KR1020067016108A patent/KR101158311B1/ko active IP Right Grant
- 2005-02-09 CN CNA2005800043307A patent/CN1918797A/zh active Pending
- 2005-02-09 US US10/589,167 patent/US7580722B2/en active Active
- 2005-02-09 DE DE602005016084T patent/DE602005016084D1/de active Active
- 2005-02-09 JP JP2006552622A patent/JP4918366B2/ja active Active
- 2005-02-09 WO PCT/EP2005/050581 patent/WO2005081414A1/en active Application Filing
- 2005-02-09 EP EP05716655A patent/EP1719251B1/en active Active
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JPH07177045A (ja) * | 1993-12-07 | 1995-07-14 | Nec Corp | 高周波増幅回路の消費電力低減方式 |
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Also Published As
Publication number | Publication date |
---|---|
EP1564897A1 (en) | 2005-08-17 |
EP1719251A1 (en) | 2006-11-08 |
KR101158311B1 (ko) | 2012-06-19 |
DE602005016084D1 (de) | 2009-10-01 |
EP1719251B1 (en) | 2009-08-19 |
WO2005081414A1 (en) | 2005-09-01 |
JP2007522747A (ja) | 2007-08-09 |
CN1918797A (zh) | 2007-02-21 |
KR20060127129A (ko) | 2006-12-11 |
US7580722B2 (en) | 2009-08-25 |
US20070184790A1 (en) | 2007-08-09 |
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