JP4918352B2 - 厚いフィルムペースト層のポリマー拡散によるパターン化方法 - Google Patents
厚いフィルムペースト層のポリマー拡散によるパターン化方法 Download PDFInfo
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- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 2
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- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
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- RUJPNZNXGCHGID-UHFFFAOYSA-N (Z)-beta-Terpineol Natural products CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
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- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
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- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 238000004140 cleaning Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
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- BRGJIIMZXMWMCC-UHFFFAOYSA-N tetradecan-2-ol Chemical compound CCCCCCCCCCCCC(C)O BRGJIIMZXMWMCC-UHFFFAOYSA-N 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0502—Patterning and lithography
- H05K2203/0511—Diffusion patterning
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0502—Patterning and lithography
- H05K2203/0525—Patterning by phototackifying or by photopatterning adhesive
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Architecture (AREA)
- Power Engineering (AREA)
- Cold Cathode And The Manufacture (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Description
a)ポリマーAのパターン化フィルムを基板上に付着させ、
b)厚いフィルムペーストをポリマーAのパターン化フィルムの上に付着させ、
c)厚いフィルムペーストを乾燥させ、その間にパターン化ポリマーAがペースト層中に拡散して、従ってパターンをペースト層に転写し、そして
d)ポリマーAに対する低い溶解度を有するペースト現像剤溶液にペースト層を暴露することによって過剰な厚いフィルムペーストを、ポリマーAが拡散していない領域から除去する
ことを含んでなる方法を包含する。
a)ポジ型フォトレジストを基板上に付着させ、
b)パターンをフォトレジスト上にマスクし、
c)フォトレジストをパターン化マスクを通して光に露光し、
d)フォトレジストを現像し、
e)厚いフィルムペーストをパターン化フォトレジストの上に付着させ、
f)厚いフィルムペーストを乾燥させ、
g)フォトレジストと混合していない過剰な厚いフィルムペーストを除去する
ことを含んでなる方法を包含する。
ある。フォトレジストは、ポリマー、溶解抑制剤(dissolution inhibitors)、モノマー、光開始剤、光酸発生剤、および/または溶剤を含有してもよい。厚いフィルムペーストは、ガラスフリット、無機粉末、金属粉末、バインダーポリマー、光活性モノマー、開始剤および/または溶剤を含有してもよい。ディスプレイの電子電界放出体として使用するための特殊な厚いフィルムペーストは、カーボン・ナノチューブをさらに含有する。
トし、レジスト層の光現像によって生じた空孔を塞ぐ。次いで、厚いフィルムペースト付着物を15〜60分間、50℃〜100℃で乾燥させ(5)、その間、厚いフィルムペースト中の溶剤が、ノボラックレジストを厚いフィルムペーストに混合するのを促進し、従って、混合された領域をアルカリ現像液に不溶性にする。次に、厚いフィルムペーストをアルカリ水溶液(例えば、0.5%の炭酸ナトリウム)の噴霧を用いてまたは超音波処理によって現像し(6)、レジストが厚いフィルムペーストと混合されていない領域のペーストを除去する。
と比較したときの厚いフィルムペーストの四角形の寸法の増加を示す。
Claims (16)
- 基板の上にパターン化された厚いフィルムペーストを付着させる方法であって、
(a)基板の上に溶媒に可溶なポリマーのパターン化された層を提供する工程、
(b)前記パターン化された層の上に溶媒を含む厚いフィルムペーストを付着させる工程、
(c)前記フィルムペースト中の溶媒でポリマーを溶解し、前記厚いフィルムペースト中にポリマーを拡散させる工程、
(d)ポリマーが拡散されていない厚いフィルムペーストを除去する工程を含んでなる方法。 - 厚いフィルムペーストでパターン化された基板を焼成する工程をさらに含んでなる請求項1に記載の方法。
- 厚いフィルムペーストを活性化する工程をさらに含んでなる請求項2に記載の方法。
- 前記ポリマーがフェノール樹脂、DNQ/ノボラックレジスト、アクリルポリマー、t−ブチル側基を有するポリマー、ポリスチレン、およびエチルセルロースよりなる群から選択される請求項1に記載の方法。
- ポリマーのパターン化された層は基板の上に印刷されている請求項1に記載の方法。
- 前記ポリマーはフォトレジストを含む請求項1に記載の方法。
- 前記フォトレジストはポジ型フォトレジストである請求項6に記載の方法。
- 前記溶媒は有機溶媒を含む請求項1に記載の方法。
- 前記有機溶媒はケトン、アルコール、エステル、エーテル、長鎖アセテートおよび芳香族化合物からなる群の一またはそれ以上から選択される請求項8に記載の方法。
- 前記厚いフィルムペーストは金属粉末、光活性モノマーおよび開始剤の一またはそれ以上を含む請求項1に記載の方法。
- 前記厚いフィルムペーストはカーボンナノチューブを含む請求項1に記載の方法。
- 前記工程(c)は厚いフィルムペーストを乾燥する工程を含む請求項1に記載の方法。
- 前記工程(d)はポリマーに対して溶解性の低い現像液を用いて付着した厚いフィルムペーストを現像する工程を含む請求項1に記載の方法。
- 前記現像する工程がアルカリスプレーまたは超音波処理を含む請求項13に記載の方法。
- 請求項1に記載の工程(a)〜(d)を含む方法で前記厚いフィルムペーストが付着された基板を用いて電子デバイスを製造する方法。
- 製造された電子デバイスは電界放出体を含む請求項15に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US44177303P | 2003-01-22 | 2003-01-22 | |
US60/441,773 | 2003-01-22 | ||
PCT/US2004/003571 WO2004066364A2 (en) | 2003-01-22 | 2004-01-21 | Binder diffusion patterning of a thick film paste layer |
Publications (2)
Publication Number | Publication Date |
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JP2006520529A JP2006520529A (ja) | 2006-09-07 |
JP4918352B2 true JP4918352B2 (ja) | 2012-04-18 |
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JP2006501140A Expired - Fee Related JP4918352B2 (ja) | 2003-01-22 | 2004-01-21 | 厚いフィルムペースト層のポリマー拡散によるパターン化方法 |
Country Status (7)
Country | Link |
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US (1) | US7358037B2 (ja) |
EP (1) | EP1586112B1 (ja) |
JP (1) | JP4918352B2 (ja) |
KR (1) | KR101012586B1 (ja) |
CN (1) | CN100592207C (ja) |
DE (1) | DE602004003904T2 (ja) |
WO (1) | WO2004066364A2 (ja) |
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US6885022B2 (en) * | 2000-12-08 | 2005-04-26 | Si Diamond Technology, Inc. | Low work function material |
KR100937085B1 (ko) * | 2002-10-26 | 2010-01-15 | 삼성전자주식회사 | 화학적 자기조립 방법을 이용한 탄소나노튜브 적층 및패턴 형성 방법 |
US20040170925A1 (en) * | 2002-12-06 | 2004-09-02 | Roach David Herbert | Positive imageable thick film compositions |
KR20050014430A (ko) * | 2003-07-31 | 2005-02-07 | 삼성에스디아이 주식회사 | 평판 표시소자의 전자 방출원 형성용 조성물 및 이로부터제조되는 전자 방출원 |
KR20050054141A (ko) * | 2003-12-04 | 2005-06-10 | 삼성에스디아이 주식회사 | 카본나노튜브 에미터의 형성방법 및 이를 이용한 전계방출표시소자의 제조방법 |
US7402373B2 (en) * | 2004-02-05 | 2008-07-22 | E.I. Du Pont De Nemours And Company | UV radiation blocking protective layers compatible with thick film pastes |
KR20060104657A (ko) | 2005-03-31 | 2006-10-09 | 삼성에스디아이 주식회사 | 전자 방출 소자 |
KR20060104652A (ko) * | 2005-03-31 | 2006-10-09 | 삼성에스디아이 주식회사 | 전자 방출 소자 |
US7608784B2 (en) | 2006-07-13 | 2009-10-27 | E. I. Du Pont De Nemours And Company | Photosensitive conductive paste for electrode formation and electrode |
WO2009086100A1 (en) | 2007-12-21 | 2009-07-09 | E. I. Du Pont De Nemours And Company | Patterning a thick film paste in surface features |
JP2009295745A (ja) * | 2008-06-04 | 2009-12-17 | Toshiba Corp | 半導体装置の製造方法 |
CN106908871B (zh) * | 2016-03-08 | 2019-02-26 | 宁波长阳科技股份有限公司 | 一种转印扩散膜的制备方法 |
CN106954347B (zh) * | 2017-04-21 | 2019-10-01 | 北京石油化工学院 | 光打印制备纳米银线电路板的方法 |
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JP2004046060A (ja) * | 2001-11-27 | 2004-02-12 | Fujitsu Ltd | レジストパターン厚肉化材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法 |
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JPS5541728A (en) * | 1978-09-18 | 1980-03-24 | Toshiba Corp | Pattern formation by thick film paste |
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US5192581A (en) * | 1989-08-10 | 1993-03-09 | Microelectronics And Computer Technology Corporation | Protective layer for preventing electroless deposition on a dielectric |
US5624782A (en) * | 1994-04-14 | 1997-04-29 | E. I. Du Pont De Nemours And Company | Method of manufacturing thick-film resistor elements |
JPH08148787A (ja) * | 1994-11-21 | 1996-06-07 | Sumitomo Kinzoku Ceramics:Kk | 厚膜ペースト |
US6258514B1 (en) * | 1999-03-10 | 2001-07-10 | Lsi Logic Corporation | Top surface imaging technique using a topcoat delivery system |
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JP2003140347A (ja) * | 2001-11-02 | 2003-05-14 | Tokyo Ohka Kogyo Co Ltd | 厚膜ホトレジスト層積層体、厚膜レジストパターンの製造方法、および接続端子の製造方法 |
US7659046B2 (en) * | 2002-04-10 | 2010-02-09 | Eastman Kodak Company | Water-developable infrared-sensitive printing plate |
TWI227380B (en) * | 2002-06-06 | 2005-02-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US20050032254A1 (en) * | 2003-07-08 | 2005-02-10 | Cheng Lap-Tak Andrew | Filling vias with thick film paste using contact printing |
US7384725B2 (en) * | 2004-04-02 | 2008-06-10 | Advanced Micro Devices, Inc. | System and method for fabricating contact holes |
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2004
- 2004-01-21 DE DE602004003904T patent/DE602004003904T2/de not_active Expired - Lifetime
- 2004-01-21 CN CN200480002598A patent/CN100592207C/zh not_active Expired - Fee Related
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- 2004-01-21 JP JP2006501140A patent/JP4918352B2/ja not_active Expired - Fee Related
- 2004-01-21 EP EP04704145A patent/EP1586112B1/en not_active Expired - Fee Related
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JPH06250379A (ja) * | 1993-02-26 | 1994-09-09 | Oki Electric Ind Co Ltd | パターン形成方法、位相シフト法用ホトマスクの形成方法 |
JPH07134422A (ja) * | 1993-09-14 | 1995-05-23 | Oki Electric Ind Co Ltd | パターン形成方法 |
JP2001109165A (ja) * | 1999-10-05 | 2001-04-20 | Clariant (Japan) Kk | パターン形成方法 |
JP2001194785A (ja) * | 2000-01-11 | 2001-07-19 | Mitsubishi Electric Corp | レジストパターン微細化材料及びこの材料を用いた半導体装置の製造方法並びにこの製造方法を用いた半導体装置 |
JP2004046060A (ja) * | 2001-11-27 | 2004-02-12 | Fujitsu Ltd | レジストパターン厚肉化材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
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EP1586112A2 (en) | 2005-10-19 |
KR20050102088A (ko) | 2005-10-25 |
US7358037B2 (en) | 2008-04-15 |
EP1586112B1 (en) | 2006-12-27 |
CN100592207C (zh) | 2010-02-24 |
WO2004066364A2 (en) | 2004-08-05 |
CN1742235A (zh) | 2006-03-01 |
KR101012586B1 (ko) | 2011-02-07 |
JP2006520529A (ja) | 2006-09-07 |
WO2004066364A3 (en) | 2005-01-20 |
DE602004003904T2 (de) | 2007-08-30 |
DE602004003904D1 (de) | 2007-02-08 |
US20040173818A1 (en) | 2004-09-09 |
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