JPS5541728A - Pattern formation by thick film paste - Google Patents

Pattern formation by thick film paste

Info

Publication number
JPS5541728A
JPS5541728A JP11442178A JP11442178A JPS5541728A JP S5541728 A JPS5541728 A JP S5541728A JP 11442178 A JP11442178 A JP 11442178A JP 11442178 A JP11442178 A JP 11442178A JP S5541728 A JPS5541728 A JP S5541728A
Authority
JP
Japan
Prior art keywords
base
resists
openings
thick film
paste
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11442178A
Other languages
Japanese (ja)
Inventor
Masanori Aoki
Tamio Saito
Kiyomi Tagaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11442178A priority Critical patent/JPS5541728A/en
Publication of JPS5541728A publication Critical patent/JPS5541728A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form patterns with openings as small as about 100 micrometers by firstly providing resist patterns on a multi-layer thick film base for LSI's to correspond to the openings, then applying a thick film insulating paste to the thus treated base and finally removing the resists to form the desired patterns.
CONSTITUTION: A photosensitive polymeric material 2 having a predetermined thickness is put in contact with a base 1. The photosensitive polymeric material 2 is exposed to light through a prescribed photomask, followed by development with a developing solution, to leave parts of the material 2 corresponding to openings as resists 3. Then an insulating paste 4 is applied over the base 1 in a thickness such that the resists are all covered. Thereupon, the resists 3 are removed together with the paste 4 just overlying each resist. The remaining portions of the paste 4 are dried and burnt to form patterns with openings 5 on the base 1.
COPYRIGHT: (C)1980,JPO&Japio
JP11442178A 1978-09-18 1978-09-18 Pattern formation by thick film paste Pending JPS5541728A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11442178A JPS5541728A (en) 1978-09-18 1978-09-18 Pattern formation by thick film paste

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11442178A JPS5541728A (en) 1978-09-18 1978-09-18 Pattern formation by thick film paste

Publications (1)

Publication Number Publication Date
JPS5541728A true JPS5541728A (en) 1980-03-24

Family

ID=14637280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11442178A Pending JPS5541728A (en) 1978-09-18 1978-09-18 Pattern formation by thick film paste

Country Status (1)

Country Link
JP (1) JPS5541728A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4525448A (en) * 1984-01-06 1985-06-25 International Telephone And Telegraph Corporation Method of fabricating sub-half-micron-size gates on semiconductor substrates
US4939071A (en) * 1984-03-06 1990-07-03 Harris Corporation Method for forming low resistance, sub-micrometer semiconductor gate structures
JPH06181616A (en) * 1992-12-21 1994-07-05 Kobashi Kogyo Co Ltd Harvester for farm product
WO2004066364A3 (en) * 2003-01-22 2005-01-20 Du Pont Binder diffusion patterning of a thick film paste layer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4525448A (en) * 1984-01-06 1985-06-25 International Telephone And Telegraph Corporation Method of fabricating sub-half-micron-size gates on semiconductor substrates
US4939071A (en) * 1984-03-06 1990-07-03 Harris Corporation Method for forming low resistance, sub-micrometer semiconductor gate structures
JPH06181616A (en) * 1992-12-21 1994-07-05 Kobashi Kogyo Co Ltd Harvester for farm product
WO2004066364A3 (en) * 2003-01-22 2005-01-20 Du Pont Binder diffusion patterning of a thick film paste layer
US7358037B2 (en) 2003-01-22 2008-04-15 E.I. Du Pont De Nemours And Company Binder diffusion transfer patterning of a thick film paste layer

Similar Documents

Publication Publication Date Title
JPS5569265A (en) Pattern-forming method
JPS5541728A (en) Pattern formation by thick film paste
DE3070434D1 (en) Mask for copying a pattern onto a photoresist layer, process for the production of this mask, and its use in a photolithographic process
JPS5461931A (en) Forming method of photo resist patterns
JPS52139375A (en) Mask for x-ray exposure
JPS55157737A (en) Resist pattern forming method for photofabrication
EP0517923A4 (en) Method of forming minute resist pattern
JPS57100428A (en) Method for photomechanical process
JPS55128832A (en) Method of making minute pattern
JPS57112753A (en) Exposure method
JPS5277671A (en) Method and equipment of masking
JPS56137632A (en) Pattern forming
JPS5654440A (en) Photosensitive lithographic material and plate making method
JPS533069A (en) Photoetching mask
JPS558013A (en) Semiconductor device manufacturing method
JPS5574544A (en) Photo mask correcting method
JPS57109331A (en) Formation of resist pattern
JPS5394771A (en) Forming method for thin film pattern
JPS5315075A (en) Forming method of etching mask in photoetching process
JPH02144989A (en) Method of treating printed circuit board
GB1535995A (en) Photolithographic production of resistance elements
JPS6427228A (en) Forming method for fine pattern of semiconductor element
JPS55128831A (en) Method of making photoresist film pattern
JPS57186329A (en) Exposing method
JPS6444935A (en) Pattern forming method