JP4909611B2 - 基板の洗浄処理装置及び洗浄処理方法 - Google Patents
基板の洗浄処理装置及び洗浄処理方法 Download PDFInfo
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- JP4909611B2 JP4909611B2 JP2006066257A JP2006066257A JP4909611B2 JP 4909611 B2 JP4909611 B2 JP 4909611B2 JP 2006066257 A JP2006066257 A JP 2006066257A JP 2006066257 A JP2006066257 A JP 2006066257A JP 4909611 B2 JP4909611 B2 JP 4909611B2
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- substrate
- organic matter
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- 239000000758 substrate Substances 0.000 title claims description 125
- 238000004140 cleaning Methods 0.000 title claims description 99
- 238000003672 processing method Methods 0.000 title description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 69
- 239000005416 organic matter Substances 0.000 claims description 61
- 239000007788 liquid Substances 0.000 claims description 44
- 239000000126 substance Substances 0.000 claims description 37
- 239000012530 fluid Substances 0.000 claims description 26
- 239000007921 spray Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 12
- 238000005507 spraying Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 2
- 238000005406 washing Methods 0.000 description 16
- 238000011144 upstream manufacturing Methods 0.000 description 11
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 6
- 238000010793 Steam injection (oil industry) Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000008399 tap water Substances 0.000 description 2
- 235000020679 tap water Nutrition 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/20—Cleaning of moving articles, e.g. of moving webs or of objects on a conveyor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Liquid Crystal (AREA)
- Cleaning In General (AREA)
Description
上記基板を搬送する搬送手段と、
搬送される上記基板に付着した有機物に物理力を付与してその有機物に傷を形成する物理力付与手段と、
有機物に傷が形成されて搬送される上記基板に加熱された水蒸気を噴射する水蒸気噴射手段と
を具備したことを特徴とする基板の洗浄処理装置にある。
上記基板を搬送する搬送工程と、
搬送される基板に付着した有機物に物理力を付与してその有機物に傷を形成する工程と
有機物に傷が形成されて搬送される基板に加熱された水蒸気を噴射する工程と
を具備したことを特徴とする基板の洗浄処理方法にある。
Claims (7)
- 基板に付着した有機物を除去する洗浄処理装置であって、
上記基板を搬送する搬送手段と、
搬送される上記基板に付着した有機物に物理力を付与してその有機物に傷を形成する物理力付与手段と、
有機物に傷が形成されて搬送される上記基板に加熱された水蒸気を噴射する水蒸気噴射手段と
を具備したことを特徴とする基板の洗浄処理装置。 - 上記物理力付与手段は、加圧された洗浄液を上記基板の有機物が付着した面に噴射するシャワー装置であることを特徴とする請求項1記載の基板の洗浄処理装置。
- 上記物理力付与手段は、洗浄液と気体を混合して上記基板の有機物が付着した面に噴射する二流体ノズル装置であることを特徴とする請求項1記載の基板の洗浄処理装置。
- 上記物理力付与手段は、洗浄液を加圧して上記基板の有機物が付着した面に噴射する高圧流体噴射装置であることを特徴とする請求項1記載の基板の洗浄処理装置。
- 上記物理力付与手段は、上記基板の有機物が付着した面に洗浄液を供給しながらブラシ洗浄する洗浄ブラシ装置であることを特徴とする請求項1記載の基板の洗浄処理装置。
- 基板に付着した有機物を除去する洗浄処理方法であって、
上記基板を搬送する搬送工程と、
搬送される基板に付着した有機物に物理力を付与してその有機物に傷を形成する工程と
有機物に傷が形成されて搬送される基板に加熱された水蒸気を噴射する工程と
を具備したことを特徴とする基板の洗浄処理方法。 - 上記水蒸気は100℃以上に加熱されていることを特徴とする請求項6記載の基板の洗浄処理方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006066257A JP4909611B2 (ja) | 2006-03-10 | 2006-03-10 | 基板の洗浄処理装置及び洗浄処理方法 |
US11/683,582 US20070256711A1 (en) | 2006-03-10 | 2007-03-08 | Substrate cleaning apparatus and method |
KR1020070023632A KR101244086B1 (ko) | 2006-03-10 | 2007-03-09 | 기판 세정 장치 및 방법 |
TW096108117A TWI436417B (zh) | 2006-03-10 | 2007-03-09 | 基板清潔裝置及方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006066257A JP4909611B2 (ja) | 2006-03-10 | 2006-03-10 | 基板の洗浄処理装置及び洗浄処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007237119A JP2007237119A (ja) | 2007-09-20 |
JP4909611B2 true JP4909611B2 (ja) | 2012-04-04 |
Family
ID=38583186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006066257A Expired - Fee Related JP4909611B2 (ja) | 2006-03-10 | 2006-03-10 | 基板の洗浄処理装置及び洗浄処理方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070256711A1 (ja) |
JP (1) | JP4909611B2 (ja) |
KR (1) | KR101244086B1 (ja) |
TW (1) | TWI436417B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009223084A (ja) * | 2008-03-18 | 2009-10-01 | Hitachi High-Technologies Corp | 基板洗浄装置、フラットパネルディスプレイの製造装置及びフラットパネルディスプレイ |
US10201840B2 (en) * | 2012-04-11 | 2019-02-12 | Gpcp Ip Holdings Llc | Process for cleaning a transport belt for manufacturing a paper web |
WO2018198466A1 (ja) * | 2017-04-25 | 2018-11-01 | 東京応化工業株式会社 | 洗浄方法、洗浄装置、記憶媒体、及び洗浄組成物 |
JP2021004149A (ja) * | 2019-06-26 | 2021-01-14 | 日本電気硝子株式会社 | ガラス板の洗浄装置及びガラス板の製造方法 |
KR102187188B1 (ko) * | 2019-07-01 | 2020-12-04 | 세메스 주식회사 | 기판 처리 장치 |
CN110882980A (zh) * | 2019-11-20 | 2020-03-17 | 蚌埠中光电科技有限公司 | 一种液晶玻璃基板的清洗方法 |
CN111687112B (zh) * | 2020-06-21 | 2022-04-22 | 无锡亚电智能装备有限公司 | 一种工件清洗方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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FI86944C (fi) * | 1989-02-02 | 1992-10-26 | Nokia Mobira Oy | Foerfarande foer tvaettning av kretsplattor och en anordning foeg anvaendning i foerfarandet |
DE19522525A1 (de) * | 1994-10-04 | 1996-04-11 | Kunze Concewitz Horst Dipl Phy | Verfahren und Vorrichtung zum Feinstreinigen von Oberflächen |
DE19916345A1 (de) * | 1999-04-12 | 2000-10-26 | Steag Electronic Systems Gmbh | Verfahren und Vorrichtung zum Reinigen von Substraten |
JP2001250773A (ja) * | 1999-08-12 | 2001-09-14 | Uct Kk | レジスト膜除去装置及びレジスト膜除去方法 |
JP2002169304A (ja) * | 2000-12-01 | 2002-06-14 | Dainippon Screen Mfg Co Ltd | 剥離装置及びレジスト膜の剥離方法 |
JP2004079595A (ja) * | 2002-08-12 | 2004-03-11 | Ici Kenkyusho:Kk | 基体洗浄方法 |
JP4494840B2 (ja) * | 2003-06-27 | 2010-06-30 | 大日本スクリーン製造株式会社 | 異物除去装置、基板処理装置および基板処理方法 |
JP4861609B2 (ja) * | 2004-05-28 | 2012-01-25 | 株式会社レナテック | 有機物質の除去方法および除去装置 |
JP2006026549A (ja) * | 2004-07-16 | 2006-02-02 | Zebiosu:Kk | 洗浄方法及びそれを実施するための洗浄装置 |
-
2006
- 2006-03-10 JP JP2006066257A patent/JP4909611B2/ja not_active Expired - Fee Related
-
2007
- 2007-03-08 US US11/683,582 patent/US20070256711A1/en not_active Abandoned
- 2007-03-09 KR KR1020070023632A patent/KR101244086B1/ko not_active IP Right Cessation
- 2007-03-09 TW TW096108117A patent/TWI436417B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2007237119A (ja) | 2007-09-20 |
KR101244086B1 (ko) | 2013-03-18 |
KR20070092681A (ko) | 2007-09-13 |
TWI436417B (zh) | 2014-05-01 |
US20070256711A1 (en) | 2007-11-08 |
TW200802572A (en) | 2008-01-01 |
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