JP4858238B2 - Laser welding member and semiconductor device using the same - Google Patents

Laser welding member and semiconductor device using the same Download PDF

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Publication number
JP4858238B2
JP4858238B2 JP2007053959A JP2007053959A JP4858238B2 JP 4858238 B2 JP4858238 B2 JP 4858238B2 JP 2007053959 A JP2007053959 A JP 2007053959A JP 2007053959 A JP2007053959 A JP 2007053959A JP 4858238 B2 JP4858238 B2 JP 4858238B2
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Japan
Prior art keywords
laser
welding
copper
plating film
laser welding
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JP2007053959A
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Japanese (ja)
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JP2008212977A (en
Inventor
克彦 吉原
圭輔 佐藤
友彰 後藤
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Publication of JP2008212977A publication Critical patent/JP2008212977A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/32—Bonding taking account of the properties of the material involved
    • B23K26/323—Bonding taking account of the properties of the material involved involving parts made of dissimilar metallic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/21—Bonding by welding
    • B23K26/22—Spot welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/32—Bonding taking account of the properties of the material involved
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Description

この発明は、溶接バラツキが少なく、低パワー・低エネルギーでレーザ溶接できるレーザ溶接部材およびそれを用いた半導体装置に関する。     The present invention relates to a laser welding member capable of performing laser welding with low power and low energy with little welding variation, and a semiconductor device using the same.

図７〜図９は、従来の半導体モジュールの構成図であり、図７は要部平面図、図８は図７のＹ−Ｙ線で切断した要部断面図、図９は図７のＸ−Ｘ線で切断した要部断面図である。
図７に示したのは、ＩＧＢＴ（絶縁ゲート型バイポーラトランジスタ）が６チップ、ＦＷＤ（フリーホイーリングダイオード）が６チップで構成される半導体モジュールの例であり、コンバータ回路やインバータ回路などの上下２アーム分で１相分に相当する。 7 to 9 are configuration diagrams of a conventional semiconductor module, in which FIG. 7 is a plan view of the main part, FIG. 8 is a cross-sectional view of the main part cut along line YY in FIG. 7, and FIG. It is principal part sectional drawing cut | disconnected by -X ray.
FIG. 7 shows an example of a semiconductor module in which an IGBT (insulated gate bipolar transistor) is composed of 6 chips and an FWD (free wheeling diode) is composed of 6 chips. The arm portion corresponds to one phase.

従って、例えば、三相モータを駆動するインバータ回路に用いる場合には、この半導体モジュール１００が３個必要になり、単相モータを駆動するインバータ回路に用いる場合には２個必要になる。
また、図７で半導体モジュール１００の右半分に位置する配線パターン４に形成された３個の並列接続されたＩＧＢＴチップ１６と３個の並列接続されたＦＷＤチップ１８は、後述する図１０で示す上アームを構成し、左半分に位置する配線パターン７上に形成された３個の並列接続されたＩＧＢＴチップ１６と３個の並列接続されたＦＷＤチップ１８は図１０で示す下アームを構成する。 Therefore, for example, three semiconductor modules 100 are required when used in an inverter circuit that drives a three-phase motor, and two semiconductor modules 100 are required when used in an inverter circuit that drives a single-phase motor.
Further, three parallel-connected IGBT chips 16 and three parallel-connected FWD chips 18 formed in the wiring pattern 4 located in the right half of the semiconductor module 100 in FIG. 7 are shown in FIG. The three parallel-connected IGBT chips 16 and the three parallel-connected FWD chips 18 that form the upper arm and are formed on the wiring pattern 7 located in the left half form the lower arm shown in FIG. .

また、半導体モジュール１００の上半分と下半分のＩＧＢＴチップ１６およびＦＷＤチップ１８の個数がそれぞれ３個づつで同数になるように配置されているのは、半導体モジュール１００の発熱が均一になるようにしているためである。
図１０は、三相モータを駆動するインバータ回路である。ＩＧＢＴ５１とＦＷＤ５２は逆並列に接続して上アームまたは下アームを構成し、その３個の出力端子１４は三相モータ５３に接続する。ＩＧＢＴ５１は図７の３個の並列接続されたＩＧＢＴチップ１６で構成され、ＦＷＤ５２は図７の３個の並列接続されたＦＷＤチップ１８で構成される。 In addition, the number of IGBT chips 16 and FWD chips 18 in the upper half and the lower half of the semiconductor module 100 are arranged to be the same number by three so that the heat generation of the semiconductor module 100 is uniform. This is because.
FIG. 10 is an inverter circuit that drives a three-phase motor. The IGBT 51 and the FWD 52 are connected in antiparallel to form an upper arm or a lower arm, and the three output terminals 14 are connected to the three-phase motor 53. The IGBT 51 is composed of the three parallel-connected IGBT chips 16 shown in FIG. 7, and the FWD 52 is composed of the three parallel-connected FWD chips 18 shown in FIG.

つぎに、図７〜図９の半導体モジュールの構成について説明する。セラミックス２ａおよびセラミックス２ｂの表側にそれぞれ形成された配線パターン４、５および配線パターン３、６、７と、裏面に形成された裏面導電膜２１と、配線パターン４、７にコレクタ側がはんだ２４で固着されるＩＧＢＴチップ１６とカソード側がはんだ２２で固着されるＦＷＤチップ１８と、ＩＧＢＴチップ１６のエミッタ側にはんだ２５で固着されるヒートスプレッダ１７と、ＦＷＤチップ１８のアノード側にはんだ２３で固着されるヒートスプレッダ１９と、ヒートスプレッダ１７、１９と配線パターン６を接続するアルミワイヤ２０と、配線パターン３、５、６とプラス端子８、マイナス端子１５、出力端子１４および配線パターン３と配線パターン４および配線パターン５と配線パターン７とをそれぞれ接続するアルミワイヤ９〜１３と、裏面導電膜２１にはんだ２６で固着される放熱基板１と、これらを被覆する図示しないモールド樹脂で構成される。     Next, the configuration of the semiconductor module of FIGS. 7 to 9 will be described. The wiring patterns 4, 5 and the wiring patterns 3, 6, 7 formed on the front side of the ceramics 2a and 2b, the back surface conductive film 21 formed on the back surface, and the collector side fixed to the wiring patterns 4, 7 with solder 24 IGBT chip 16 and FWD chip 18 whose cathode side is fixed by solder 22, heat spreader 17 fixed by solder 25 on the emitter side of IGBT chip 16, and heat spreader fixed by solder 23 on the anode side of FWD chip 18 19, heat spreaders 17 and 19, aluminum wire 20 connecting wiring pattern 6, wiring patterns 3, 5 and 6, plus terminal 8, minus terminal 15, output terminal 14 and wiring pattern 3, wiring pattern 4 and wiring pattern 5. And wiring pattern 7 are connected to each other. A wire 9 to 13, a heat dissipating substrate 1 is fixed by solder 26 to the back-surface conductive film 21, composed of a mold resin not shown to cover them.

図７を用いて、半導体モジール１００内の電流経路４６、４７について説明する。
プラス端子８⇒アルミワイヤ９⇒配線パターン３⇒アルミワイヤ１０⇒配線パターン４⇒配線パターン上に搭載されたＩＧＢＴチップ１６⇒ＩＧＢＴチップ１６上に搭載されたヒートスプレッダ１７⇒アルミワイヤ２０⇒配線パターン５⇒アルミワイヤ１２⇒出力端子１４⇒図１０の三相モータ５３などの負荷装置⇒ここでは便宜的に図７の半導体モジュール１００で説明するが、実際は別の半導体モジュールの出力端子１４へ電流は流れる（図１０参照）⇒アルミワイヤ１２⇒配線パターン５⇒アルミワイヤ１１⇒配線パターン７⇒７上のＩＧＢＴチップ１６⇒ＩＧＢＴチップ１６上のヒートスプレッダ１７⇒アルミワイヤ２０⇒配線パターン６⇒アルミワイヤ１３⇒マイナス端子１５となる。この場合のアルミワイヤの線径は、φ３００μｍ〜５００μｍが用いられる。 The current paths 46 and 47 in the semiconductor module 100 will be described with reference to FIG.
Positive terminal 8 ⇒ aluminum wire 9 ⇒ wiring pattern 3 ⇒ aluminum wire 10 ⇒ wiring pattern 4 ⇒ IGBT chip 16 mounted on the wiring pattern ⇒ heat spreader 17 mounted on the IGBT chip 16 ⇒ aluminum wire 20 ⇒ wiring pattern 5 ⇒ Aluminum wire 12 ⇒ output terminal 14 ⇒ load device such as three-phase motor 53 in FIG. 10 ⇒ Here, the semiconductor module 100 in FIG. 7 will be described for convenience, but in reality, current flows to the output terminal 14 of another semiconductor module ( 10) ⇒ Aluminum wire 12 ⇒ Wiring pattern 5 ⇒ Aluminum wire 11 ⇒ Wiring pattern 7 ⇒ IGBT chip 16 on 7 ⇒ Heat spreader 17 on IGBT chip 16 ⇒ Aluminum wire 20 ⇒ Wiring pattern 6 ⇒ Aluminum wire 13 ⇒ Negative terminal 15 In this case, φ300 μm to 500 μm is used as the wire diameter of the aluminum wire.

近年のチップに通電する電流が増大するのにともない、アルミワイヤ２０、アルミワイヤ９、アルミワイヤ１０およびアルミワイヤ１２に流れる電流が増加し、これらのアルミワイヤの自己発熱による温度上昇が問題となっている。自己発熱を回避するために、これらのアルミワイヤを太くしたり、本数を増やすなどの対応がなされているが、ヒートスプレッダ１７、１９の表面積が限られているため、アルミワイヤの太線化及び本数増加には限界がある。一方、性能向上にともなって、ＩＧＢＴチップ１６やＦＷＤチップ１８は年々小型化されてきており、ワイヤボンディング可能な面積はさらに縮小化されてくるため、アルミワイヤに代わる配線方法が必要となってきている。     As current flowing through the chip increases in recent years, the current flowing through the aluminum wire 20, the aluminum wire 9, the aluminum wire 10, and the aluminum wire 12 increases, and the temperature rise due to self-heating of these aluminum wires becomes a problem. ing. In order to avoid self-heating, measures such as thickening these aluminum wires or increasing the number of wires have been taken, but since the surface area of the heat spreaders 17 and 19 is limited, the aluminum wires are thickened and the number of wires is increased. Has its limits. On the other hand, as the performance is improved, the IGBT chip 16 and the FWD chip 18 are miniaturized year by year, and the area capable of wire bonding is further reduced, so that a wiring method instead of an aluminum wire is required. Yes.

そこで、アルミワイヤよりも断面積が大きな銅箔（リードフレーム）などを用いることにより、大電流化に対応する技術が考案されている（特許文献１など）。
特許文献１において、半導体チップ上面のエミッタ電極に、銅箔などのリードフレームを超音波溶接する方法が開示されている。また、絶縁基板上の配線パターンと銅箔との接合は超音波接合もしくはレーザ溶接方法とすることが開示されている。 In view of this, there has been devised a technique corresponding to the increase in current by using a copper foil (lead frame) having a cross-sectional area larger than that of the aluminum wire (Patent Document 1, etc.).
Patent Document 1 discloses a method of ultrasonically welding a lead frame such as a copper foil to an emitter electrode on an upper surface of a semiconductor chip. Further, it is disclosed that the bonding between the wiring pattern on the insulating substrate and the copper foil is an ultrasonic bonding or a laser welding method.

つぎに、リードフレームをレーザ溶接した従来の半導体装置（半導体モジュール）について説明する。
図１１〜図１３は、リードフレームをレーザ溶接した従来の半導体装置の構成図であり、図１１は要部平面図、図１２は図１１のＹ−Ｙ線で切断した要部断面図、図１３は図１１のＸ−Ｘ線で切断した要部断面図である。 Next, a conventional semiconductor device (semiconductor module) in which a lead frame is laser-welded will be described.
11 to 13 are configuration diagrams of a conventional semiconductor device in which a lead frame is laser-welded. FIG. 11 is a plan view of a main part, and FIG. 12 is a cross-sectional view of a main part taken along line YY in FIG. 13 is a cross-sectional view of a principal part taken along line XX in FIG.

図１１〜図１３に示した構造例は、図７〜図９に示したアルミワイヤ９〜１３部分をリードフレーム２７、２８、６０とレーザ溶接部３３、３４に代え、リードフレーム２７、２８、６０の固着をレーザ溶接（レーザ溶接部３５、６１、６２、６３）にて行った場合のものである。図７で示した電流経路４６、４７は図１１でも同じであるので説明を省略する。     11 to 13, the aluminum wires 9 to 13 shown in FIGS. 7 to 9 are replaced with lead frames 27, 28, 60 and laser welded portions 33, 34, and the lead frames 27, 28, This is a case where 60 is fixed by laser welding (laser welding portions 35, 61, 62, 63). The current paths 46 and 47 shown in FIG. 7 are the same in FIG.

ここでレーザ溶接部材はヒートスプレッダ１７、１９とリードフレーム６０およびリードフレーム２７、２８、６０と配線パターン３、４、５、７さらには配線パターン３、５、６とプラス端子８、出力端子１４、マイナス端子１５であり、レーザ溶接部３３〜３５、６１〜６３でそれぞれが固着する。
また、特許文献２によれば、表面に母材よりもレーザ吸収率の高い金属膜を形成してこの高い金属膜にレーザ照射して溶接することが開示されている。 Here, the laser welding members are the heat spreaders 17 and 19, the lead frame 60, the lead frames 27, 28 and 60, the wiring patterns 3, 4, 5, 7 and the wiring patterns 3, 5, 6 and the plus terminal 8, the output terminal 14, The negative terminal 15 is fixed to each other at the laser welding portions 33 to 35 and 61 to 63.
Further, Patent Document 2 discloses that a metal film having a laser absorption rate higher than that of the base material is formed on the surface, and this high metal film is irradiated with laser and welded.

また、特許文献３によれば、銅からなるリードフレームをＹＡＧレーザ溶接する場合、そのリードフレーム表面にＮｉめっき膜が形成されていることが開示されている。
特開２００４−９６１３５号公報 特開平７−２１４３６９号公報 特開２００１−１６８２４４号公報 Patent Document 3 discloses that when a lead frame made of copper is YAG laser welded, a Ni plating film is formed on the surface of the lead frame.
JP 2004-96135 A JP 7-214369 A JP 2001-168244 A

図１２に示した上側のリードフレーム６０（例えば、銅）を下側のヒートスプレッダ１７、１９（例えば、モリブデンの焼結体に銅を含浸させた複合材（以下、ＣｕＭｏ材という）にレーザ溶接する場合、上側のリードフレーム６０のレーザ照射面の吸収率が重要となる。例えば、レーザ光にＹＡＧレーザを用いた場合、ＹＡＧレーザの波長である１０６４ｎｍに対する銅（無酸素銅など）の吸収率は約１０％であり、そのままでは溶接が困難であることは周知である。そこで、銅のような低吸収率材の表面には、より吸収率の高いＮｉめっき膜等が形成されている。ＮｉめっきのＹＡＧレーザに対する吸収率は約２８％であり、銅の２．８倍である。     The upper lead frame 60 (for example, copper) shown in FIG. 12 is laser-welded to the lower heat spreaders 17 and 19 (for example, a composite material in which a molybdenum sintered body is impregnated with copper (hereinafter referred to as CuMo material). In this case, the absorptance of the laser irradiation surface of the upper lead frame 60 is important, for example, when a YAG laser is used as the laser light, the absorptance of copper (such as oxygen-free copper) with respect to the YAG laser wavelength of 1064 nm is Therefore, it is well known that welding is difficult as it is, and therefore, a Ni plating film having a higher absorption rate is formed on the surface of a low absorption rate material such as copper. The absorptivity of the plating with respect to the YAG laser is about 28%, which is 2.8 times that of copper.

前記したように、銅からなるリードフレーム６０とＣｕＭｏ材材からなるヒートスプレッダ１７、１９をＹＡＧレーザ溶接する場合、そのリードフレーム６０表面にＮｉめっき膜が形成されていることは、特許文献３で示されている。しかし、このＮｉめっき膜の形成はレーザの吸収率を上げる目的か否かは記載されていない。また、このＮｉめっき膜の膜質が無電解Ｎｉめっき膜なのか電解Ｎｉめっき膜なのかは記載されていない。     As described above, Patent Document 3 shows that when the lead frame 60 made of copper and the heat spreaders 17 and 19 made of a CuMo material are YAG laser welded, a Ni plating film is formed on the surface of the lead frame 60. Has been. However, it is not described whether or not the formation of the Ni plating film is for the purpose of increasing the absorption rate of the laser. Moreover, it is not described whether the film quality of this Ni plating film is an electroless Ni plating film or an electrolytic Ni plating film.

また、特許文献２には、レーザ照射面となる金属膜と母材の融点差については触れられていない。
また、特許文献１においては、レーザ溶接するときＮｉめっき膜を銅箔に被覆することなどは示されていない。
発明者がＹＡＧレーザを用いて、図１２に示すリードフレーム６０を形成する銅の表面に無電解Ｎｉめっき処理を行い、ヒートスプレッダ１７、１９であるＣｕＭｏ材とレーザ溶接をしたので、その結果について説明する。ヒートスプレッダ１７、１９は半導体チップで発生した熱を効率よく放散させる効果があり、シリコンとの熱膨張係数が銅より近いＣｕＭｏ材やダングステンの焼結体に銅を含浸させた複合材（以下、ＣｕＷ材という）などの銅より高融点材料が多用される。 Patent Document 2 does not mention the difference in melting point between the metal film serving as the laser irradiation surface and the base material.
Further, Patent Document 1 does not show that a Ni plating film is coated on a copper foil when laser welding is performed.
The inventor performed an electroless Ni plating process on the surface of copper forming the lead frame 60 shown in FIG. 12 using a YAG laser, and performed laser welding with the CuMo material as the heat spreaders 17 and 19, and the results will be described. To do. The heat spreaders 17 and 19 have an effect of efficiently dissipating heat generated in the semiconductor chip, and a CuMo material having a thermal expansion coefficient close to that of silicon or a composite material obtained by impregnating copper into a sintered body of dungsten (hereinafter referred to as CuW). High melting point materials are used more frequently than copper.

図１４は、表面に無電解Ｎｉめっき膜を形成した無酸素銅とＣｕＭｏ材との溶接強度のバラツキとレーザパワーの関係を示した図である。用いたレーザ溶接部材は上側に厚さが０．５ｍｍの無酸素銅３７、下側に厚さが１．０ｍｍのＣｕＭｏ材３９である。上側の無酸素銅３７の表面に無電解Ｎｉめっき膜３８を形成した。無電解Ｎｉめっき膜３８の厚さは２μｍ〜３μｍとした。ＹＡＧレーザ３６を用い、ファイバ径φ０．８ｍｍ、エネルギー１００Ｊおよびピークパワー７．３ｋＷ〜８．０ｋＷの範囲で溶接を行った。     FIG. 14 is a graph showing the relationship between the laser power and the variation in welding strength between oxygen-free copper having a surface formed with an electroless Ni plating film and a CuMo material. The laser welding member used is an oxygen-free copper 37 having a thickness of 0.5 mm on the upper side and a CuMo material 39 having a thickness of 1.0 mm on the lower side. An electroless Ni plating film 38 was formed on the surface of the upper oxygen-free copper 37. The thickness of the electroless Ni plating film 38 was 2 μm to 3 μm. Welding was performed using a YAG laser 36 in a range of fiber diameter φ0.8 mm, energy 100 J, and peak power 7.3 kW to 8.0 kW.

図１４から分かるように、無電解Ｎｉめっき膜３８はレーザパワー７．９ｋＷ以下では強度不足であり、レーザパワー８ｋＷにするとスパッタが発生し、使用できるレーザパワー範囲が７．９ｋＷを超えて８ｋＷ未満と狭い。このように、許容されるレーザパワー範囲が狭く、溶接状態のバラツキも大きい理由について説明する。
図１５は、無酸素銅の表面に無電解Ｎｉめっき膜を形成し、ＣｕＭｏ材とレーザ溶接した場合の溶接様態を示す図で、同図（ａ）は溶接の初期状態の図、同図（ｂ）はパワーを増大させて溶接した場合の図、同図（ｃ）はパワーをさらに増大した場合の図である。これは無酸素銅３７の表面に無電解Ｎｉめっき膜３８を行ったリードフレーム６０と、ＣｕＭｏ材３９で形成したヒートスプレッダ１７、１９とをＹＡＧレーザ３６を用いて溶接した状態を示す。レーザ溶接部材としては上側が無酸素銅３７であり下側がＣｕＭｏ材３９である。 As can be seen from FIG. 14, the electroless Ni plating film 38 has insufficient strength when the laser power is 7.9 kW or less, and spatter occurs when the laser power is 8 kW, and the usable laser power range exceeds 7.9 kW and less than 8 kW. And narrow. The reason why the allowable laser power range is narrow and the variation in the welding state is large will be described.
FIG. 15 is a diagram showing a welding state when an electroless Ni plating film is formed on the surface of oxygen-free copper and laser welding is performed with a CuMo material. FIG. 15 (a) is a diagram of an initial state of welding. (b) is a diagram in the case of welding with increasing power, and (c) is a diagram in the case of further increasing power. This shows a state in which the lead frame 60 in which the electroless Ni plating film 38 is formed on the surface of the oxygen-free copper 37 and the heat spreaders 17 and 19 formed of the CuMo material 39 are welded using the YAG laser 36. As the laser welding member, the upper side is oxygen-free copper 37 and the lower side is CuMo material 39.

図１５（ａ）において、照射したＹＡＧレーザ光３６が無電解Ｎｉめっき３８表面に当たり、一部（約２８％）がＮｉめっきに吸収され、熱エネルギーに変換される。変換された熱エネルギーによりＮｉが加熱され、融点を超えると溶融する。ここで、用いた無電解Ｎｉめっき膜３８の融点は８９０℃であるので、熱エネルギーによってＮｉが加熱され、融点である８９０℃を超えた箇所（無電解Ｎｉめっき膜が無くなった箇所４０）から溶融が始まる。無電解Ｎｉめっき膜３８下層の無酸素銅３７の融点は１０８３℃であるので、表層の無電解Ｎｉめっき膜３８が溶融しても、下層の無酸素銅３７の融点には達しないため、溶融初期は無電解Ｎｉめっき膜３８のみが溶融した状態となる。     In FIG. 15A, the irradiated YAG laser beam 36 hits the surface of the electroless Ni plating 38, and a part (about 28%) is absorbed by the Ni plating and converted into thermal energy. Ni is heated by the converted thermal energy and melts when the melting point is exceeded. Here, since the melting point of the electroless Ni plating film 38 used is 890 ° C., Ni is heated by the thermal energy, and from the point where the melting point exceeds 890 ° C. (the point 40 where the electroless Ni plating film disappears). Melting begins. Since the melting point of the oxygen-free copper 37 under the electroless Ni plating film 38 is 1083 ° C., even if the electroless Ni plating film 38 in the surface layer melts, the melting point of the oxygen-free copper 37 in the lower layer does not reach the melting point. Initially, only the electroless Ni plating film 38 is melted.

図１５（ｂ）において、所望の溶接強度を得るために、さらにレーザパワーを高くすると、溶融した無電解Ｎｉめっき膜３８が除去され、下層の無酸素銅３７の表面が出現すると考えられる。無酸素銅３７のＹＡＧレーザ光３６に対する吸収率は約１０％に過ぎないため、表層の無電解Ｎｉめっき膜３８が溶融するレーザパワーであっても、無酸素銅３７を溶融することができない。このため、レーザパワーを高くすると、今度は無電解Ｎｉめっき膜３８が飛散してしまい、レーザ吸収率が低い下層の無酸素銅３７が露出する。無電解Ｎｉめっき膜の除去状態により、下層の無酸素銅３７に対するＹＡＧレーザ光３６の当たり方にバラツキが生じるため、溶接バラツキが生じるものと考えられる。     In FIG. 15B, it is considered that when the laser power is further increased in order to obtain a desired welding strength, the melted electroless Ni plating film 38 is removed and the surface of the lower oxygen-free copper 37 appears. Since the absorptivity of the oxygen-free copper 37 with respect to the YAG laser light 36 is only about 10%, the oxygen-free copper 37 cannot be melted even with a laser power that melts the electroless Ni plating film 38 on the surface layer. For this reason, when the laser power is increased, the electroless Ni plating film 38 is scattered this time, and the lower oxygen-free copper 37 having a low laser absorption rate is exposed. Depending on the state of removal of the electroless Ni plating film, variations occur in the manner in which the YAG laser light 36 strikes the underlying oxygen-free copper 37, which is considered to cause variations in welding.

また、この無酸素銅３７の面にＹＡＧレーザ光３６が照射されても吸収率が低いため、なかなか溶融させることができない。銅溶融部４１の面積が少なく、下側のＣｕＭｏ材３９との接合面積が不足しており、充分な溶接強度が得られていない。
図１５（ｃ）において、充分な溶接強度を得るためにさらにレーザパワーを高くすると、今度は銅溶接部４１が下側のＣｕＭｏ材３９を貫通してしまう。図１５では省略しているが、下側のＣｕＭｏ材３９の下には、はんだ２３、２５を介してＩＧＢＴチップ１６およびＦＷＤチップ１８が配置されているため、銅溶接部４１が貫通することでチップ破壊を引き起こしてしまう。また、仮に下側のＣｕＭｏ材３９がセラミックス２ａ、２ｂ上の配線パターン３〜７である場合（通常は銅であるが）には、銅溶融部４１が配線パターン３〜７下のセラミックス２ａ、２ｂを破壊し、電気的な不具合を引き起こしてしまう。 Further, even if the surface of the oxygen-free copper 37 is irradiated with the YAG laser light 36, the absorption rate is low, so that it cannot be easily melted. The area of the copper melted portion 41 is small, and the joining area with the lower CuMo material 39 is insufficient, so that sufficient welding strength is not obtained.
In FIG. 15C, if the laser power is further increased in order to obtain sufficient welding strength, the copper welded portion 41 will penetrate the lower CuMo material 39 this time. Although omitted in FIG. 15, since the IGBT chip 16 and the FWD chip 18 are disposed under the lower CuMo material 39 via the solders 23 and 25, the copper welded portion 41 penetrates. This will cause chip destruction. Also, if the lower CuMo material 39 is the wiring patterns 3 to 7 on the ceramics 2a and 2b (usually copper), the copper melting portion 41 is the ceramics 2a below the wiring patterns 3 to 7, 2b will be destroyed and an electrical failure will be caused.

また、図１５（ｃ）に示したように、銅溶融部４１の一部がスパッタ４２として飛散した場合には、セラミックス２ａ、２ｂ上のＩＧＢＴチップ１６およびＦＷＤチップ１８の損傷、配線間の短絡が起こり、使用できなくなる。
このように、表面がＮｉめっき膜などの他の金属膜で被覆されていない無垢の無酸素銅３７の表面ではレーザ吸収率が低いため、無酸素銅３７の表面に無電解Ｎｉめっき膜３８を形成しても、無酸素銅３７で形成されたリードフレーム６０とＣｕＭｏ材３９で形成されたヒートスプレッダ１７、１９とのレーザ溶接においては所望の溶接状態を得ることが困難である。また、無電解Ｎｉめっき膜３８の飛散状態により、溶接状態が左右されるため溶接バラツキが多く、所望の溶接強度が得られるレーザパワー領域は狭い。これにより、出力の変動や、部材厚さのバラツキ、表面状態のバラツキなど、許容寸法公差内であっても、無電解めっき膜３８を形成した無酸素銅３７とＣｕＭｏ材３９のレーザ溶接部材の場合には、溶接バラツキが大きく、高パワー・高エネルギーのレーザ溶接となる。 Further, as shown in FIG. 15C, when a part of the copper melting portion 41 is scattered as the sputter 42, the IGBT chip 16 and the FWD chip 18 on the ceramics 2a and 2b are damaged, and the wiring is short-circuited. Occurs and cannot be used.
Thus, since the laser absorptance is low on the surface of the solid oxygen-free copper 37 whose surface is not covered with another metal film such as a Ni plating film, the electroless Ni plating film 38 is formed on the surface of the oxygen-free copper 37. Even if formed, it is difficult to obtain a desired welding state in laser welding of the lead frame 60 formed of oxygen-free copper 37 and the heat spreaders 17 and 19 formed of the CuMo material 39. Further, since the welding state depends on the scattering state of the electroless Ni plating film 38, there are many welding variations, and the laser power region in which a desired welding strength can be obtained is narrow. Thereby, even within the allowable dimensional tolerances such as output fluctuation, member thickness variation, surface state variation, etc., the laser-welded member of the oxygen free copper 37 and the CuMo material 39 on which the electroless plating film 38 is formed. In some cases, the welding variation is large, resulting in high power / high energy laser welding.

この発明の目的は、前記の課題を解決して、溶接バラツキが少なく、低パワー・低エネルギーでレーザ溶接できるレーザ溶接部材およびそれを用いた半導体装置を提供することある。     An object of the present invention is to solve the above-described problems, and to provide a laser welding member that can be laser-welded with low power and low energy with little welding variation, and a semiconductor device using the same.

前記の目的を達成するために、第１部材と該第１部材より融点の高い金属を主体主材とする第２部材で構成されるレーザ溶接部材において、前記第１部材の表面に該第１部材より融点の高い金属膜を被覆し、該金属膜をレーザ光の照射面とすることを特徴とするレーザ溶接部材。
また、前記第１部材が、無酸素銅もしくはタフピッチ銅であるとよい。 In order to achieve the above object, in a laser welding member composed of a first member and a second member mainly composed of a metal having a melting point higher than that of the first member, the first member is formed on the surface of the first member. A laser welding member characterized in that a metal film having a melting point higher than that of the member is coated, and the metal film is used as a laser light irradiation surface.
The first member may be oxygen-free copper or tough pitch copper.

また、前記第２部材が、モリブデンもしくはタングステンを主材とし、その気孔部に銅を有する複合材であるとよい。この複合材はたとえば、モリブデンもしくはタングステンの焼結体に銅を含浸させて形成する。
また、前記金属膜が、電解Ｎｉメッキ膜、Ｃｒ膜、Ｃｏ膜、Ｔｉ膜もしくはＰｄ膜のいずれか一つであるとよい。 The second member may be a composite material having molybdenum or tungsten as a main material and copper in the pores. For example, this composite material is formed by impregnating a sintered body of molybdenum or tungsten with copper.
The metal film may be any one of an electrolytic Ni plating film, a Cr film, a Co film, a Ti film, and a Pd film.

また、前記金属膜の膜厚が、１μｍ〜１００μｍであるとよい。
また、前記金属膜の膜厚が、１μｍ〜１０μｍであるとさらに好ましい。
また、前記のレーザ溶接部材を用いて形成した半導体装置において、ヒートスプレッダが前記第２部材で形成され、リードフレームが前記金属膜を被覆した前記第１部材で形成される半導体装置とする。 Moreover, the film thickness of the said metal film is good in it being 1 micrometer-100 micrometers.
Further, the thickness of the metal film is more preferably 1 μm to 10 μm.
In the semiconductor device formed using the laser welding member, a heat spreader is formed of the second member, and a lead frame is formed of the first member coated with the metal film.

この発明によれば、銅であるリードフレームと銅より高融点材料であるＣｕＭｏ材やＣｕＷ材で形成されたヒートスプレッダとをレーザ溶接する場合に、リードフレームの表面に電解Ｎｉめっき膜を形成し、この電解Ｎｉめっき膜面にレーザ光を照射してレーザ溶接することで、溶接バラツキが少なく、低パワー・低エネルギーでレーザ溶接することができる。その結果、良好なレーザ溶接とスパッタの飛散防止により、半導体装置の良品率を高めることができる。     According to the present invention, when laser welding a lead frame made of copper and a heat spreader made of CuMo material or CuW material which is a higher melting point than copper, an electrolytic Ni plating film is formed on the surface of the lead frame, By performing laser welding by irradiating the surface of the electrolytic Ni plating film with laser light, there is little welding variation, and laser welding can be performed with low power and low energy. As a result, the good product rate of the semiconductor device can be increased by good laser welding and prevention of spatter scattering.

実施の形態を以下の実施例で説明する。     Embodiments will be described in the following examples.

図１〜図４は、この発明の第１実施例の半導体装置の構成図であり、図１は要部平面図、図２は図１のＹ−Ｙ線で切断した要部断面図、図３は図１のＸ−Ｘ線で切断した要部断面図、図４は図２のＡ部拡大図である。この半導体装置は複数の半導体チップ（ここでは３個のＩＧＢＴチップ１６と３個のＦＷＤチップ１８である）で構成される半導体モジュールである。図１１〜図１３と同一部位には同一の符号を付した。但し、ヒートスプレッダ１７、１９とレーザ溶接されるリードフレームは本発明のポイントとなる部位のため、その符号を６０（図１１）から２９（図１）と変更した。     1 to 4 are block diagrams of a semiconductor device according to a first embodiment of the present invention. FIG. 1 is a plan view of a main part, and FIG. 2 is a cross-sectional view of the main part taken along line YY in FIG. 3 is a cross-sectional view of the main part taken along line XX in FIG. 1, and FIG. 4 is an enlarged view of part A in FIG. This semiconductor device is a semiconductor module composed of a plurality of semiconductor chips (here, three IGBT chips 16 and three FWD chips 18). The same parts as those in FIGS. 11 to 13 are denoted by the same reference numerals. However, since the lead frame to be laser welded to the heat spreaders 17 and 19 is a part of the present invention, the reference numeral was changed from 60 (FIG. 11) to 29 (FIG. 1).

セラミックス２ａおよびセラミックス２ｂの表側にそれぞれ形成された配線パターン４、５および配線パターン３、６、７と、裏面に形成された裏面導電膜２１と、配線パターン４、７にコレクタ側がはんだ２４で固着されるＩＧＢＴチップ１６とカソード側がはんだ２２で固着されるＦＷＤチップ１８と、ＩＧＢＴチップ１６のエミッタ側およびＦＷＤチップ１８のアノード側にはんだ２５、２３でそれぞれ固着されるヒートスプレッダ１７、１９と、これらのヒートスプレッダ１７、１９および配線パターン６にレーザ溶接でそれぞれ固着されるリードフレーム２９と、配線パターン３、５、６にレーザ溶接でそれぞれ固着されるプラス端子８、出力端子１４およびマイナス端子１５と、配線パターン３と配線パターン４にレーザ溶接で固着されるリードフレーム２７と、配線パターン５と配線パターン７にレーザ溶接で固着されるリードフレーム２８と、裏面導電膜２１にはんだ２６で固着される放熱基板１と、この放熱基板１の裏面を露出させ前記したＩＧＢＴチップ１６やＦＷＤチップ１８などを被覆した図示しないモールド樹脂（パッケージなど）で構成される。     The wiring patterns 4, 5 and the wiring patterns 3, 6, 7 formed on the front side of the ceramics 2a and 2b, the back surface conductive film 21 formed on the back surface, and the collector side fixed to the wiring patterns 4, 7 with solder 24 FWD chip 18 whose cathode side is fixed by solder 22 to IGBT chip 16 to be formed, heat spreaders 17 and 19 fixed by solder 25 and 23 to the emitter side of IGBT chip 16 and the anode side of FWD chip 18, respectively, Lead frames 29 fixed to the heat spreaders 17 and 19 and the wiring pattern 6 by laser welding, plus terminals 8, output terminals 14 and minus terminals 15 respectively fixed to the wiring patterns 3, 5, and 6 by laser welding, wiring Laser welding to pattern 3 and wiring pattern 4 The lead frame 27 to be attached, the lead frame 28 fixed to the wiring pattern 5 and the wiring pattern 7 by laser welding, the heat dissipation substrate 1 fixed to the back surface conductive film 21 with solder 26, and the back surface of the heat dissipation substrate 1 It is composed of a mold resin (package or the like) (not shown) that is exposed and covers the IGBT chip 16 or the FWD chip 18 described above.

ここでレーザ溶接部材はヒートスプレッダ１７、１９とリードフレーム２９およびリードフレーム２７、２８、２９と配線パターン３、４、５、７さらには配線パターン３、５、６とプラス端子８、出力端子１４、マイナス端子１５であり、レーザ溶接部３０〜３５でそれぞれが固着する。各部のレーザ溶接部の個数は流れる電流の大きさに応じて１個から１０個程度である。     Here, the laser welding members are the heat spreaders 17 and 19, the lead frame 29, the lead frames 27, 28 and 29, the wiring patterns 3, 4, 5, 7 and the wiring patterns 3, 5, 6 and the plus terminal 8, the output terminal 14, The negative terminal 15 is fixed to each other at the laser welding portions 30 to 35. The number of laser welds in each part is about 1 to 10 depending on the magnitude of the flowing current.

前記のヒートスプレッダ１７、１９は、高融点部材であり、モリブデンもしくはタングステンを主材とし、その気孔部に銅を有する複合材である。この複合材はたとえば、モリブデンもしくはタングステンの焼結体に銅を含浸させて形成する。
モリブデンの焼結体に銅を含浸させた複合材（ＣｕＭｏ材）、タングステンの焼結体に銅を含浸させた複合材（ＣｕＷ材）である。また、このヒートスプレッダ１７、１９とレーザ溶接で固着されるリードフレーム２９は無酸素銅３７（もしくはタフピッチ銅）の表面にこれらの銅より融点の高い金属膜（例えば、電解Ｎｉめっき膜４３）などが被覆されている。この電解Ｎｉめっき膜４３の厚さは１μｍ〜１００μｍとし、好ましくは１μｍ〜１０μｍの範囲とする。厚さが１μｍ未満にするとＮｉ膜が形成されない箇所が発生する。また、１００μｍを超えるとめっきする時間が長くなり製造コストが増大する。尚、前記のヒートスプレッダ１７、１９の表面にも電解Ｎｉめっき膜４３を形成した場合にも同様の結果が得られる。 The heat spreaders 17 and 19 are high melting point members, and are composite materials having molybdenum or tungsten as a main material and copper in the pores. For example, this composite material is formed by impregnating a sintered body of molybdenum or tungsten with copper.
A composite material (CuMo material) obtained by impregnating molybdenum into a sintered body of molybdenum, and a composite material (CuW material) obtained by impregnating copper into a sintered body of tungsten. Further, the lead frame 29 fixed to the heat spreaders 17 and 19 by laser welding has a metal film (for example, electrolytic Ni plating film 43) having a melting point higher than those of copper on the surface of oxygen-free copper 37 (or tough pitch copper). It is covered. The thickness of the electrolytic Ni plating film 43 is 1 μm to 100 μm, preferably 1 μm to 10 μm. When the thickness is less than 1 μm, a portion where the Ni film is not formed occurs. On the other hand, when the thickness exceeds 100 μm, the plating time becomes long and the manufacturing cost increases. The same result can be obtained when the electrolytic Ni plating film 43 is also formed on the surfaces of the heat spreaders 17 and 19.

またレーザ溶接に用いるレーザ光の波長は０．１９μｍ（エキシマレーザ）〜１０．６μｍ（ＣＯ２ガスレーザ）の範囲で所望の波長を用いる。通常よく用いられるのはＹＡＧレーザ（波長が１．０６４μｍ）である。
尚、前記の電解Ｎｉめっき膜４３の代わりに、銅（Ｃｕ：融点１０８３℃）より高融点材料である、クロム（Ｃｒ：同１８５７℃）、コバルト（Ｃｏ：同１４９５℃）、チタン（Ｔｉ：同１６６０℃）およびパラジウム（Ｐｄ：同１５５４℃）などを用いてもよい。膜厚や使用するレーザ光の波長の範囲は電解Ｎｉめっき膜４３の場合と同じである。 The wavelength of the laser beam used for laser welding is a desired wavelength in the range of 0.19 μm (excimer laser) to 10.6 μm (CO 2 gas laser). A YAG laser (wavelength: 1.064 μm) is usually used frequently.
In place of the electrolytic Ni plating film 43, chromium (Cr: 1857 ° C), cobalt (Co: 1495 ° C), titanium (Ti: 1660 ° C.) and palladium (Pd: 1554 ° C.) may be used. The film thickness and the range of the wavelength of the laser beam used are the same as in the case of the electrolytic Ni plating film 43.

また、これらの金属膜はめっき法で形成しても良いし、加熱圧接法を用いても良い。工業的に簡便なのは電気めっき法であるが、形成させる母材（無酸素銅もしくはタフピッチ銅）と金属膜の種類により、適宜選定すれば良い。
ここで、電解Ｎｉめっき膜４３で被覆した無酸素銅３７とＣｕＭｏ材３９とのレーザ溶接について詳細に説明する。 Further, these metal films may be formed by a plating method, or a heating pressure welding method may be used. The electroplating method is industrially simple, but may be selected as appropriate depending on the base material (oxygen-free copper or tough pitch copper) to be formed and the type of metal film.
Here, laser welding of the oxygen-free copper 37 covered with the electrolytic Ni plating film 43 and the CuMo material 39 will be described in detail.

従来例に示した無電解Ｎｉめっき膜３８は非晶質であるため、融点は８９０℃であるが、電解Ｎｉめっき膜４３は微結晶から結晶性（結晶化されていること）であるため融点が高く、１４５０℃である。
図５は、電解Ｎｉめっき膜を形成した銅と銅より高融点材料であるＣｕＭｏ材との溶接強度のバラツキとレーザパワーの関係を示した図である。参考までに図１４で説明した無電解Ｎｉめっき膜３８の場合も図示した。 Since the electroless Ni plating film 38 shown in the conventional example is amorphous, the melting point is 890 ° C., but since the electrolytic Ni plating film 43 is crystalline (crystalline), it has a melting point. Is 1450 ° C.
FIG. 5 is a diagram showing the relationship between the laser power and the variation in welding strength between copper on which an electrolytic Ni plating film is formed and a CuMo material having a higher melting point than copper. For reference, the electroless Ni plating film 38 described with reference to FIG. 14 is also illustrated.

用いたレーザ溶接部材は上側に厚さが０．５ｍｍの無酸素銅３７（リードフレーム２９）、下側に厚さが１．０ｍｍのＣｕＭｏ材３９（ヒートスプレッダ１７、１９）である。上側の無酸素銅３７の表面に電解Ｎｉめっき膜４３（従来は無電解Ｎｉめっき膜３８）を形成した。電解Ｎｉめっき膜４３の厚さは２μｍ〜３μｍとした。レーザはＹＡＧレーザ３６を用い、ファイバ径φ０．８ｍｍ、エネルギー１００Ｊおよびピークパワー７．３ｋＷ〜８．０ｋＷの範囲で溶接を行った。     The laser welding member used is oxygen-free copper 37 (lead frame 29) having a thickness of 0.5 mm on the upper side and CuMo material 39 (heat spreaders 17 and 19) having a thickness of 1.0 mm on the lower side. An electrolytic Ni plating film 43 (conventional electroless Ni plating film 38) was formed on the surface of the upper oxygen-free copper 37. The thickness of the electrolytic Ni plating film 43 was 2 μm to 3 μm. The laser was YAG laser 36, and welding was performed in the range of fiber diameter φ0.8 mm, energy 100 J, and peak power 7.3 kW to 8.0 kW.

従来の無電解Ｎｉめっき膜３８では前記したように溶接強度のバラツキが大きいが、電解Ｎｉめっき膜４３ではバラツキが小さく抑制された。また、前記したように、無電解Ｎｉめっき膜３８では使用できるレーザパワー範囲が７．９ｋＷを超えて８ｋＷ未満と狭いが、電解Ｎｉめっき膜４３では、レーザパワー７．４ｋＷ〜７．６ｋＷの広い範囲で充分な接合強度が得られ、スパッタの発生も無く良好であった。     The conventional electroless Ni plating film 38 has a large variation in welding strength as described above, but the electrolytic Ni plating film 43 has a small variation. In addition, as described above, the laser power range that can be used for the electroless Ni plating film 38 is as narrow as less than 8 kW, exceeding 7.9 kW, but the electrolytic Ni plating film 43 has a wide laser power range of 7.4 kW to 7.6 kW. Sufficient bonding strength was obtained in the range, and no spatter was generated.

ここで、電解Ｎｉめっき膜４３にすることで、溶接バラツキが少なくなりレーザパワーが低くても溶接が可能となった理由について、以下に説明する。
図６は、無酸素銅に電解Ｎｉめっき膜を形成し、ＣｕＭｏ材とレーザ溶接した場合の溶接形態を説明する図で、同図（ａ）は溶接の初期状態の図、同図（ｂ）は溶接後の状態の図である。 Here, the reason why the electrolytic Ni plating film 43 is used for welding even when the welding variation is reduced and the laser power is low will be described.
FIG. 6 is a diagram for explaining a welding mode when an electrolytic Ni plating film is formed on oxygen-free copper and laser welding is performed with a CuMo material. FIG. 6 (a) is a diagram of an initial state of welding, and FIG. These are figures of the state after welding.

図６（ａ）において、無酸素銅３７の表面に形成された電解Ｎｉめっき膜４３の表面をレーザ照射面としてＹＡＧレーザ光３６を照射すると、無電解Ｎｉめっき膜３８で説明した場合と同じように、一部のレーザ光（ＮｉのＹＡＧレーザ光３６に対する吸収率は約２８％）はＮｉに吸収され、熱エネルギーに変換される。この熱エネルギーによって電解Ｎｉめっき膜４３が加熱され、電解Ｎｉめっき膜４３の融点１４５０℃に達すると、溶融し始め溶融したＮｉめっき層４４が形成される。ここで、電解Ｎｉめっき膜４３の下層である無酸素銅３７の融点は１０８３℃であるので、表層の電解Ｎｉめっき膜４３が溶融した時（溶融したＮｉめっき層４４が形成された時）は、既に下層の無酸素銅３７は溶融状態にあると考えられる。     In FIG. 6A, when the YAG laser light 36 is irradiated with the surface of the electrolytic Ni plating film 43 formed on the surface of the oxygen-free copper 37 as the laser irradiation surface, it is the same as the case described for the electroless Ni plating film 38. In addition, a part of the laser light (the absorption rate of Ni with respect to the YAG laser light 36 is approximately 28%) is absorbed by Ni and converted into thermal energy. The electrolytic Ni plating film 43 is heated by this thermal energy, and when the melting point of the electrolytic Ni plating film 43 reaches 1450 ° C., the molten Ni plating layer 44 is formed. Here, since the melting point of the oxygen-free copper 37 which is the lower layer of the electrolytic Ni plating film 43 is 1083 ° C., when the surface electrolytic Ni plating film 43 is melted (when the molten Ni plating layer 44 is formed). The underlying oxygen-free copper 37 is considered to be in a molten state.

溶融した電解Ｎｉめっき膜４４（融点１４５０℃）が無酸素銅３７表面から一部除去され、無垢（電解Ｎｉめっき膜４３のない）の無酸素銅３７表面が露出したとしても、既に無酸素銅３７表面は融点の１０８３℃以上に達していると思われるため、もはや固体の銅のレーザ吸収率ではなくなり、レーザ吸収率は高くなっている。
溶融状態の金属に対するＹＡＧレーザ３６の吸収率は、固体状態の金属より数倍高くなることは一般的によく知られていることである。よって、表面に電解Ｎｉめっき膜４３を形成したものは、表面に無電解Ｎｉめっき膜３８を形成した場合よりも低いレーザパワーで溶接が可能となったと考えられる。 Even if the molten electrolytic Ni plating film 44 (melting point 1450 ° C.) is partially removed from the surface of the oxygen-free copper 37 and the surface of the pure oxygen (without the electrolytic Ni plating film 43) is exposed, the oxygen-free copper is already present. Since the surface of 37 seems to have reached the melting point of 1083 ° C. or higher, it is no longer the solid laser absorption rate of copper, and the laser absorption rate is high.
It is generally well known that the absorptance of the YAG laser 36 for molten metal is several times higher than for solid metal. Accordingly, it is considered that welding with the electrolytic Ni plating film 43 on the surface enabled welding with a lower laser power than when the electroless Ni plating film 38 was formed on the surface.

電解Ｎｉめっき膜４３を表層に形成することで、表面材質自体の融点は高くなるが、一度溶融すればその下層の無酸素銅３７も溶融状態にあるため、低いレーザパワーで容易に溶接が可能となるものと考えられる。
また、図６（ｂ）に示すように、レーザパワーとしては、表層の電解Ｎｉめっき膜４３を溶融させることができるパワーを少し超えたパワーで下側のＣｕＭｏ材３９を溶融させ、所望の深さの銅溶融部４５（レーザ溶接部３０、３１）が形成されるので、溶融状態のコントロールがしやすく、溶接バラツキの少ない接合が可能となる。 By forming the electrolytic Ni plating film 43 on the surface layer, the melting point of the surface material itself becomes high, but once melted, the underlying oxygen-free copper 37 is also in a molten state, so that it can be easily welded with low laser power. It is considered that.
Further, as shown in FIG. 6 (b), as the laser power, the CuMo material 39 on the lower side is melted at a power slightly higher than the power capable of melting the electrolytic Ni plating film 43 on the surface layer, and a desired depth is obtained. Since the copper melted part 45 (laser welded parts 30, 31) is formed, it is easy to control the melted state, and joining with less welding variation is possible.

尚、前記の実施例での説明は、電解Ｎｉめっき膜４３をリードフレーム２９の表面に形成し場合であるが、リードフレーム２７、２８、プラス端子８、出力端子１４およびマイナス端子１５が無酸素銅３７で形成されている場合、その表面に電解Ｎｉめっき膜４３を形成しても、前記と同様に溶接バラツキが少なくなりレーザパワーを低くても溶接が可能となる。但し、この場合には下地が、通常、銅（例えば、無酸素銅）で形成された配線パターン３〜７である場合には、レーザ溶接時にスパッタが発生しやすいので、溶接箇所以外の領域にスパッタが飛散するのを防止する方策が必要となる。     In the above embodiment, the electrolytic Ni plating film 43 is formed on the surface of the lead frame 29. However, the lead frames 27 and 28, the positive terminal 8, the output terminal 14 and the negative terminal 15 are oxygen-free. In the case of being formed of copper 37, even if the electrolytic Ni plating film 43 is formed on the surface, welding variation is reduced as described above, and welding is possible even if the laser power is low. However, in this case, when the base is usually a wiring pattern 3 to 7 formed of copper (for example, oxygen-free copper), spatter is likely to occur during laser welding. A measure to prevent the spatter from scattering is required.

この発明の第１実施例の半導体装置の要部平面図The principal part top view of the semiconductor device of 1st Example of this invention 図１のＹ−Ｙ線で切断した要部断面図Sectional drawing of the principal part cut | disconnected by the YY line of FIG. 図１のＸ−Ｘ線で切断した要部断面図Sectional drawing of the principal part cut | disconnected by the XX line of FIG. 図２のＡ部拡大図Part A enlarged view of FIG. 電解Ｎｉめっき膜を形成した銅と銅より高融点材料であるＣｕＭｏ材との溶接強度のバラツキとレーザパワーの関係を示した図The figure which showed the relation between the welding power variation and the laser power of copper which formed the electrolytic Ni plating film and CuMo material which is higher melting point material than copper 無酸素銅に電解Ｎｉめっき膜を形成し、ＣｕＭｏ材とレーザ溶接した場合の溶接形態を説明する図で、（ａ）は溶接の初期状態の図、（ｂ）は溶接後の状態の図It is a figure explaining the welding form at the time of forming an electrolytic Ni plating film in oxygen free copper, and carrying out laser welding with a CuMo material, (a) is a figure of the initial state of welding, (b) is a figure of the state after welding. 従来の半導体モジュールの要部平面図Plan view of main parts of a conventional semiconductor module 図７のＹ−Ｙ線で切断した要部断面図Sectional drawing of the principal part cut | disconnected by the YY line of FIG. 図７のＸ−Ｘ線で切断した要部断面図Sectional drawing of the principal part cut | disconnected by the XX line of FIG. 三相モータを駆動するインバータ回路Inverter circuit that drives a three-phase motor リードフレームをレーザ溶接した従来の半導体装置の要部平面図Plan view of relevant parts of a conventional semiconductor device with a lead frame laser welded 図１１のＹ−Ｙ線で切断した要部断面図Sectional drawing of the principal part cut | disconnected by the YY line of FIG. 図１１のＸ−Ｘ線で切断した要部断面図Sectional drawing of the principal part cut | disconnected by the XX line of FIG. 表面に無電解Ｎｉめっき膜を形成した無酸素銅とＣｕＭｏ材との溶接強度のバラツキとレーザパワーの関係を示した図The figure which showed the relation between laser power and variation in welding strength between oxygen free copper and CuMo material with electroless Ni plating film formed on the surface 無酸素銅の表面に無電解Ｎｉめっき膜を形成し、ＣｕＭｏ材とレーザ溶接した場合の溶接様態を示す図で、（ａ）は溶接の初期状態の図、（ｂ）はパワーを増大させて溶接した場合の図、（ｃ）はパワーをさらに増大した場合の図It is a figure which shows the welding mode at the time of forming an electroless Ni plating film on the surface of oxygen free copper, and laser welding with CuMo material, (a) is a figure of the initial state of welding, (b) is increasing power. Figure when welding, (c) is a figure when the power is further increased

符号の説明Explanation of symbols

１ 放熱基板
２ａ セラミックス（上アーム）
２ｂ セラミックス（下アーム）
３、４、５、６、７ 配線パターン
８ プラス端子
１４ 出力端子
１５ マイナス端子
１６ ＩＧＢＴチップ
１７ ヒートスプレッダ（ＩＧＢＴ上）
１８ ＦＷＤチップ
１９ ヒートスプレッダ（ＦＷＤ上）
２１ 裏面導電膜
２２、２３、２４、２５、２６ はんだ
２７、２８ リードフレーム（配線パターン間接続）
２９ リードフレーム（ヒートスプレッダと接続）
３０、３１、３２、３３、３４、３５ レーザ溶接部
３６ レーザ光
３７ 無酸素銅
３９ ＣｕＭｏ材
４３ 電解Ｎｉめっき膜
４４ 溶融したＮｉめっき層
４５ 銅溶融部
1 Heat dissipation board 2a Ceramics (upper arm)
2b Ceramics (lower arm)
3, 4, 5, 6, 7 Wiring pattern 8 Positive terminal 14 Output terminal 15 Negative terminal 16 IGBT chip 17 Heat spreader (on IGBT)
18 FWD chip 19 Heat spreader (on FWD)
21 Back surface conductive film 22, 23, 24, 25, 26 Solder 27, 28 Lead frame (connection between wiring patterns)
29 Lead frame (connected to heat spreader)
30, 31, 32, 33, 34, 35 Laser welded portion 36 Laser light 37 Oxygen-free copper 39 CuMo material 43 Electrolytic Ni plating film 44 Melted Ni plating layer 45 Copper fusion zone

Claims (7)

第１部材と該第１部材より融点の高い金属を主材とする第２部材で構成されるレーザ溶接部材において、前記第１部材の表面に該第１部材より融点の高い金属膜を被覆し、該金属膜をレーザ光の照射面とすることを特徴とするレーザ溶接部材。 In a laser welding member composed of a first member and a second member mainly composed of a metal having a melting point higher than that of the first member, a metal film having a melting point higher than that of the first member is coated on the surface of the first member. A laser welding member, wherein the metal film is used as a laser light irradiation surface. 前記第１部材が、無酸素銅もしくはタフピッチ銅であることを特徴とする請求項１に記載のレーザ溶接部材。 The laser welding member according to claim 1, wherein the first member is oxygen-free copper or tough pitch copper. 前記第２部材が、モリブデンもしくはタングステンを主材とし気孔部に銅を有する複合材であることを特徴とする請求項１に記載のレーザ溶接部材。 The laser welding member according to claim 1, wherein the second member is a composite material having molybdenum or tungsten as a main material and copper in a pore portion. 前記金属膜が、電解Ｎｉメッキ膜、Ｃｒ膜、Ｃｏ膜、Ｔｉ膜もしくはＰｄ膜のいずれか一つであることを特徴とする請求項１〜３のいずれか一項に記載のレーザ溶接部材。 The laser welding member according to any one of claims 1 to 3, wherein the metal film is any one of an electrolytic Ni plating film, a Cr film, a Co film, a Ti film, or a Pd film. 前記金属膜の膜厚が、１μｍ〜１００μｍであることを特徴とする請求項４に記載のレーザ溶接部材。 The thickness of the said metal film is 1 micrometer-100 micrometers, The laser welding member of Claim 4 characterized by the above-mentioned. 前記金属膜の膜厚が、１μｍ〜１０μｍであることを特徴とする請求項５に記載のレーザ溶接部材。 The thickness of the said metal film is 1 micrometer-10 micrometers, The laser welding member of Claim 5 characterized by the above-mentioned. 請求項１〜６のいずれか一項に記載のレーザ溶接部材を用いて形成した半導体装置において、ヒートスプレッダが前記第２部材で形成され、リードフレームが前記金属膜を被覆した前記第１部材で形成されることを特徴とする半導体装置。
The semiconductor device formed using the laser welding member according to claim 1, wherein a heat spreader is formed by the second member, and a lead frame is formed by the first member covered with the metal film. A semiconductor device that is characterized in that:
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