JP4856745B2 - Conductor for flexible substrate, method for producing the same, and flexible substrate - Google Patents
Conductor for flexible substrate, method for producing the same, and flexible substrate Download PDFInfo
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Description
本発明は、配線用導体及び端末接続部に係り、特に電子機器に使用されるフレキシブルフラットケーブル（ＦＦＣ）、フレキシブルプリント配線板（ＦＰＣ）等のフレキシブル基板に用いる導体およびその製造方法並びにフレキシブル基板に関するものである。 The present invention relates to a wiring conductor and a terminal connection portion, and more particularly to a conductor used for a flexible substrate such as a flexible flat cable (FFC) and a flexible printed wiring board (FPC) used in an electronic device, a manufacturing method thereof, and a flexible substrate. Is.
従来、配線材、特に銅や銅合金の表面には、配線材の酸化を防ぐために、Ｓｎ，Ａｇ，ＡｕやＮｉのめっきが施される。 Conventionally, the surface of a wiring material, particularly copper or copper alloy, is plated with Sn, Ag, Au, or Ni in order to prevent the wiring material from being oxidized.
例えば、図２に示すように、コネクタ１１とフレキシブルフラットケーブル（以下、ＦＦＣという）１３の端末接続部においては、コネクタ（コネクタ部材）１１のコネクタピン（金属端子）１２や、ＦＦＣ１３の導体１４の表面などにめっきが施されている。なかでも、Ｓｎはコストが安価であり、軟らかいため嵌合の圧力で容易に変形し、接触面積が増え、接触抵抗が低く抑えられることから、配線材の表面にＳｎめっきを施したものが広く一般的に使用されている。 For example, as shown in FIG. 2, in the terminal connection part of the connector 11 and flexible flat cable (hereinafter referred to as FFC) 13, the connector pins (metal terminals) 12 of the connector (connector member) 11 and the conductors 14 of the FFC 13 The surface is plated. In particular, Sn is inexpensive and soft, so it easily deforms with the pressure of fitting, increases the contact area, and keeps the contact resistance low, so the surface of the wiring material with Sn plating is widely used. Commonly used.
このＳｎめっき用合金として、従来は、耐ウィスカ性が良好なＳｎ−Ｐｂ合金が用いられてきたが、近年は環境面での対応の観点から、Ｐｂフリー材（非鉛材）、ノンハロゲン材の使用が求められており、配線材に使用される各種材料に対してもＰｂフリー化、ノンハロゲン化が求められている Conventionally, Sn-Pb alloys having good whisker resistance have been used as the Sn plating alloy. However, in recent years, Pb-free materials (lead-free materials) and non-halogen materials have been used from the viewpoint of environmental support. Pb-free and non-halogenated are also required for various materials used for wiring materials.
ところがＳｎめっきのＰｂフリー化に伴って、特にＳｎまたはＳｎ系合金めっきにおいては、図３に示すようにＳｎの針状結晶であるウィスカ２１がめっきから発生し、ウィスカ２１により隣接配線間の短絡事故が問題となっている。 However, as Sn plating becomes Pb-free, particularly in Sn or Sn-based alloy plating, whisker 21 which is a needle crystal of Sn is generated from plating as shown in FIG. Accidents are a problem.
ウィスカの発生原因の一つとして考えられているＳｎめっき中の応力を緩和させるため、電気めっきしたＳｎをリフロー処理することにより、ウィスカの発生を低減させることが可能であるとされている。しかし、そのウィスカ抑制のメカニズムは正確にはわかっていない。また、コネクタとの嵌合など新たな外部応力がかかる場合は、リフロー処理を施してもウィスカの発生を抑えることができない。またＢｉやＡｇなどの合金電解あるいは無電解めっきによりウィスカを抑制することができるが、リフロー処理することにより逆に純Ｓｎのときよりもウィスカが発生してしまうことが報告されている。 In order to relieve stress during Sn plating, which is considered as one of the causes of whisker generation, it is said that reflow treatment of electroplated Sn can reduce the generation of whiskers. However, the exact mechanism of whisker suppression is unknown. In addition, when a new external stress such as fitting with a connector is applied, the occurrence of whiskers cannot be suppressed even if reflow processing is performed. Moreover, whisker can be suppressed by alloy electrolysis or electroless plating such as Bi or Ag, but it has been reported that whisker is generated by reflow treatment, compared to pure Sn.
電子部品の場合は、部品実装のためリフロー処理が必須となっており、これら合金めっきにも問題がある。 In the case of electronic components, reflow processing is essential for component mounting, and there is a problem with these alloy platings.
現在のところ有効な対策として１μｍ以下の薄いＳｎめっきを施す方法も開示されているが、特に高温放置時において従来よりも接触抵抗が増大するという問題がある。 As a currently effective measure, a method of applying a thin Sn plating of 1 μm or less is also disclosed, but there is a problem that the contact resistance is increased as compared with the prior art particularly when left at high temperatures.
以上の事情を考慮して本発明は創案されたものであり、その目的は、特にコネクタとの嵌合など大きな外部応力がかかる環境下においても、導体周囲のＳｎめっき膜表面やはんだからウィスカが発生するおそれの少ない、あるいはほとんど発生せず、高温放置環境においても接触抵抗が増大することのないフレキシブル基板用導体およびその製造方法並びにフレキシブル基板を提供することにある。 The present invention has been devised in view of the above circumstances, and its purpose is to provide whisker from the Sn plating film surface and solder around the conductor even in an environment where a large external stress such as fitting with a connector is applied. It is an object of the present invention to provide a flexible substrate conductor, a method for manufacturing the same, and a flexible substrate that are less likely to occur or hardly occur, and that do not increase contact resistance even in a high temperature standing environment.
上記目的を達成するために請求項１の発明は、フレキシブルフラットケーブルやフレキシブルプリント基板内部に配設される導体において、Ｃｕ又はＣｕ合金からなる導体の表面にＳｎ又はＳｎ合金めっき膜が形成され、そのめっき膜の表面酸化膜が、Ｐ，Ａｌ，Ｔｉのうちから選ばれる少なくとも1種以上の元素の酸化物からなり、上記表面酸化膜の膜厚が５ｎｍ以下であることを特徴とするフレキシブル基板用導体である。 In order to achieve the above object, the invention according to claim 1 is a conductor arranged inside a flexible flat cable or a flexible printed circuit board, and a Sn or Sn alloy plating film is formed on the surface of the conductor made of Cu or Cu alloy, The surface oxide film of the plating film is made of an oxide of at least one element selected from P, Al, and Ti, and the film thickness of the surface oxide film is 5 nm or less. Conductor.
請求項２の発明は、フレキシブルフラットケーブルやフレキシブルプリント基板内部に配設される導体の製造方法において、Ｃｕ又はＣｕ合金からなる導体の表面にＳｎ又はＳｎ合金めっき膜を形成すると共にその表面にＰ，Ａｌ，Ｔｉのうちから選ばれる少なくとも１種以上の元素のめっき膜を形成し、その後リフロー処理により、表面酸化膜を、これら選択した元素の酸化物とすると共に、上記表面酸化膜の膜厚を、５ｎｍ以下とすることを特徴とするフレキシブル基板用導体の製造方法である。 According to a second aspect of the present invention, there is provided a method for producing a conductor disposed in a flexible flat cable or a flexible printed circuit board, in which a Sn or Sn alloy plating film is formed on the surface of a conductor made of Cu or Cu alloy and P is formed on the surface thereof. , Al, to form a plated film of at least one element selected from among Ti, by subsequent reflow process, the surface oxide film, with the oxides of these elements selected, the thickness of the surface oxide film Is a method for producing a conductor for a flexible substrate, wherein the thickness is 5 nm or less.
請求項３の発明は、フレキシブルフラットケーブルやフレキシブルプリント基板内部に配設される導体の製造方法において、Ｃｕ又はＣｕ合金からなる導体の表面にＰ，Ａｌ，Ｔｉのうちから選ばれる少なくとも１種以上の元素を含むＳｎ又はＳｎ合金めっき膜を形成し、その後リフロー処理により、表面酸化膜を、これら選択した元素の酸化物とすると共に、上記表面酸化膜の膜厚を、５ｎｍ以下とすることを特徴とするフレキシブル基板用導体の製造方法である。 According to a third aspect of the present invention, there is provided a method for producing a conductor disposed inside a flexible flat cable or a flexible printed circuit board, and at least one selected from P 1 , Al and Ti on the surface of the conductor made of Cu or Cu alloy. Forming a Sn or Sn alloy plating film containing any of the above elements, and then making the surface oxide film an oxide of these selected elements by reflow treatment, and reducing the thickness of the surface oxide film to 5 nm or less. It is the manufacturing method of the conductor for flexible substrates characterized.
請求項４の発明は、請求項１に記載のフレキシブル基板用導体を、複数本並行に配列してなる導体群の両面に、絶縁層を設けたことを特徴とするフレキシブル基板である。 The invention according to claim 4 is a flexible substrate characterized in that an insulating layer is provided on both surfaces of a conductor group in which a plurality of conductors for flexible substrate according to claim 1 are arranged in parallel.
請求項５の発明は、上記絶縁層を、片面に接着層を有する樹脂フィルム材で構成した請求項４に記載のフレキシブル基板である。 A fifth aspect of the invention is the flexible substrate according to the fourth aspect , wherein the insulating layer is made of a resin film material having an adhesive layer on one side.
本発明により、フレキシブルフラットケーブルやフレキシブルプリント配線板において嵌合部のような外部応力がかかる場合においてもＳｎの針状結晶であるウィスカを抑制することが可能になり、隣接配線間の短絡といった不具合を解決することができる。また高温環境においても接触信頼性を損なうことがない。 According to the present invention, it is possible to suppress whisker which is a needle crystal of Sn even when an external stress such as a fitting portion is applied to a flexible flat cable or a flexible printed wiring board, and a problem such as a short circuit between adjacent wirings. Can be solved. In addition, contact reliability is not impaired even in a high temperature environment.
以下、本発明の好適な一実施の形態を添付図面に基づいて詳述する。 A preferred embodiment of the present invention will be described below in detail with reference to the accompanying drawings.
Ｓｎめっき導体の酸化膜は、通常Ｓｎの酸化物だけで構成されるが、上記目的を達成すべく、本発明に関わる導体は表面酸化膜をＳｎ以外の元素の酸化物としたことにある。Ｓｎ以外の元素としてＰ，Ａｌ，Ｔｉがある。 The oxide film of the Sn-plated conductor is usually composed only of an oxide of Sn. In order to achieve the above object, the conductor according to the present invention is that the surface oxide film is an oxide of an element other than Sn. As an element other than Sn a certain P, Al, is Ti.
例えば、図１に示すように、Ｃｕ又はＣｕ合金からなる導体（図示せず）の表面あるいは周囲に、ＳｎまたはＳｎ合金めっき膜１５を形成し、めっき膜１５の表面に、Ｐ酸化物あるいはＳｎ酸化物とＰ酸化物からなる表面酸化膜１６ｂを形成したものである。 For example, as shown in FIG. 1, a Sn or Sn alloy plating film 15 is formed on or around a conductor (not shown) made of Cu or Cu alloy , and P oxide or Sn is formed on the surface of the plating film 15. A surface oxide film 16b made of oxide and P oxide is formed.
この表面酸化膜１６ｂは、ＳｎまたはＳｎ合金めっき膜１５の表面にＰ，ＡｌやＴｉのめっきを形成した後に、これを酸化物としても、あるいはＳｎまたはＳｎ合金にそれらの元素を添加し、これを導体にめっきしてＳｎ合金めっき膜１５を形成し、その表面を酸化してＰ，ＡｌやＴｉを含む表面酸化膜１６ｂを形成するようにしてもよい。 This surface oxide film 16b is formed by forming P , Al or Ti plating on the surface of the Sn or Sn alloy plating film 15 and then adding these elements as oxides or adding these elements to Sn or Sn alloy. The Sn alloy plating film 15 may be formed by plating a conductor, and the surface thereof may be oxidized to form a surface oxide film 16b containing P 2 , Al, or Ti.
通常、Ｓｎめっきに応力が加わったとき、表面酸化膜の欠陥がウィスカ発生の核となり、成長するということが言われている。（参考文献：錫ウィスカ成長プロセスの解明と対策 Ｒ＆Ｄプランニング社）
特許文献１では、Ｓｎめっき膜を酸化処理することにより、厚く緻密なＳｎ酸化物または水酸化膜を形成させ、表面の欠陥を減らし、ウィスカを抑制する方法が開示されている。
Usually, it is said that when stress is applied to Sn plating, defects in the surface oxide film serve as nuclei for whisker generation and grow. (Reference: Clarification of tin whisker growth process and countermeasures R & D Planning)
Patent Document 1 discloses a method of forming a thick and dense Sn oxide or hydroxide film by oxidizing a Sn plating film, reducing surface defects, and suppressing whiskers.
しかし、コネクタの嵌合部などＳｎめっき膜が大きく変形する場合では、表面酸化膜の欠陥の発生を防ぐことはできない。また表面に厚く酸化膜を形成させることは接触抵抗を増大させることになり、好ましくない。 However, when the Sn plating film is greatly deformed, such as the fitting part of the connector, it is not possible to prevent the occurrence of defects in the surface oxide film. Further, it is not preferable to form a thick oxide film on the surface because it increases the contact resistance.
本発明者らが鋭意研究した結果、Ｐ，Ａｌ，Ｔｉのうち少なくとも１種の酸化物を表面に形成させることで、従来Ｓｎの酸化物のみからなる酸化膜の性状を変えることができ、ウィスカ発生頻度を低減できることを見出した。またこれら酸化物が厚くなると、コネクタ嵌合によるウィスカ発生頻度は逆に大きくなることが分かった。 As a result of intensive studies by the present inventors, by forming at least one oxide of P 2 , Al, and Ti on the surface, it is possible to change the properties of an oxide film made of only an oxide of Sn in the prior art. It has been found that the frequency of occurrence can be reduced. It was also found that when these oxides become thicker, the frequency of whisker generation due to connector fitting increases.
そこで、Ｃｕ平角線に溶融めっきにより、種々の濃度のＺｎ，Ｐ，ＡｌやＴｉを添加した厚さ８〜１０μｍのＳｎめっき膜を施し、ＸＰＳ分析（Ｘ線光電子分光法）により表面酸化物の種類を、ＡＥＳ深さ方向分析（オージェ電子分光法）から酸化膜の厚さを調査した。またそれぞれの試料をコネクタと嵌合し、２週間室温放置後、コネクタから外し、嵌合部をＳＥＭ観察し１０μｍ以上のウィスカのウィスカ発生頻度を計測した。 Therefore, an Sn plating film having a thickness of 8 to 10 μm to which various concentrations of Zn, P, Al, and Ti are added is applied to a Cu rectangular wire by hot dipping, and the surface oxide is analyzed by XPS analysis (X-ray photoelectron spectroscopy). The thickness of the oxide film was investigated from AES depth direction analysis (Auger electron spectroscopy). Each sample was fitted with a connector, allowed to stand at room temperature for 2 weeks, removed from the connector, the fitting part was observed with an SEM, and the whisker occurrence frequency of whiskers of 10 μm or more was measured.
表１にそれぞれのデータを示す。 Table 1 shows the respective data.
表面酸化膜がＳｎ酸化物のみからなる試料Ｎｏ．１と比較して、Ｚｎ酸化物からなる試料Ｎｏ．２〜５，Ｓｎ酸化物とＰ酸化物の混合からなる試料Ｎｏ．６，Ａｌ酸化物からなる試料Ｎｏ．７，Ｔｉ酸化物からなる試料Ｎｏ．８は、ウィスカ発生頻度を低減させることができた。 Sample No. whose surface oxide film is composed only of Sn oxide. Compared to Sample No. 1 made of Zn oxide. Sample Nos. 2 to 5, consisting of a mixture of Sn oxide and P oxide. 6, Sample No. made of Al oxide. 7. Sample No. made of Ti oxide. No. 8 was able to reduce the occurrence frequency of whiskers.
このように表面をＳｎ酸化物のみからなる場合と比較して、Ｓｎ以外の元素の酸化物あるいはＳｎ酸化物とＳｎ以外の元素の酸化物の混合とすることで、ウィスカ発生頻度を抑制できることを確認した。 Compared to the case where the surface is made of only Sn oxide in this way, the frequency of whisker generation can be suppressed by using an oxide of an element other than Sn or a mixture of an oxide of Sn oxide and an element other than Sn. confirmed.
また試料５の結果から、表面酸化膜をＳｎ以外の元素の酸化物としても、その厚さが厚い場合にはウィスカ抑制効果が得られないことが分かった。したがって、表面酸化膜は５ｎｍ以下好ましくは３ｎｍ以下とすることが望ましい。 From the results of Sample 5, it was found that even if the surface oxide film is an oxide of an element other than Sn, the whisker suppressing effect cannot be obtained when the thickness is large. Therefore, the surface oxide film is desirably 5 nm or less, preferably 3 nm or less.
Ｐ，Ａｌ，ＴｉはどちらもＳｎより酸化し易い傾向にあり、これら元素をＳｎめっきに添加し熱処理することで、自然にこれらの酸化物を形成させることができ、Ｓｎめっき表面酸化膜の性状を変化させることができる。 P , Al, and Ti all tend to oxidize more easily than Sn. By adding these elements to Sn plating and heat treatment, these oxides can be formed naturally, and the properties of the Sn plating surface oxide film. Can be changed.
１１ コネクタ
１２ コネクタピン
１３ ＦＦＣ
１４ 導体
１５ Ｓｎめっき膜
１６ｂ 表面酸化膜
２１ ウィスカ
11 Connector 12 Connector pin 13 FFC
14 Conductor 15 Sn plating film 16b Surface oxide film 21 Whisker
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| JPH08186050A (en) * | 1994-12-28 | 1996-07-16 | Taiyo Yuden Co Ltd | Electronic device and production thereof |
| JP2004349078A (en) * | 2003-05-21 | 2004-12-09 | Mitsubishi Electric Corp | Circuit-breaker |
| JP4878735B2 (en) * | 2004-01-22 | 2012-02-15 | 住友電気工業株式会社 | Flat cable |
| JP4367149B2 (en) * | 2004-01-30 | 2009-11-18 | 日立電線株式会社 | Flat cable conductor, method of manufacturing the same, and flat cable |
| JP4228234B2 (en) * | 2004-07-08 | 2009-02-25 | 株式会社フジクラ | Flexible printed circuit board terminal or flexible flat cable terminal |
| JP4525285B2 (en) * | 2004-10-12 | 2010-08-18 | 富士通株式会社 | Electronic component and manufacturing method thereof |
| JP4570948B2 (en) * | 2004-12-10 | 2010-10-27 | 日鉱金属株式会社 | Sn-plated strip of Cu-Zn alloy with reduced whisker generation and method for producing the same |
| JP2006196323A (en) * | 2005-01-14 | 2006-07-27 | Takamatsu Mekki:Kk | Connection terminal and its manufacturing method |
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