JP2008210584A - Flexible flat cable terminal - Google Patents
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Abstract
Description
本発明は、錫めっき処理された平角銅導体を用いたフレキシブルフラットケーブル端子部（以下、ＦＦＣ端子部）に関し、特に銅によるマイグレーションを完全に防止でき、コネクタと嵌合して使用されるＦＦＣ端子部に関する。 The present invention relates to a flexible flat cable terminal portion (hereinafter referred to as an FFC terminal portion) using a tin-plated flat copper conductor, and in particular, it can completely prevent migration due to copper and can be used by fitting with a connector. Related to the department.
電子機器等に用いられる部品や配線基板等は、銅や銅合金を配線部に使用されている。そして、これ等を他の配線基板等と電気的に接続する場合には、半田付や超音波接合などの金属結合によって接合する他に、コネクタ接続も多く行われている。特にコネクタ接続する場合には、配線とコネクタの接触抵抗を低くして導通不良をなくすために、銅配線端子部を表面処理することが行われている。一般に、錫−鉛合金（以下、Ｓｎ−Ｐｂ合金）による電解めっき処理である。しかしながら、またＰｂを含む合金によるめっき処理では、Ｐｂが酸性雨等により溶出して環境を汚染する問題が指摘されており、Ｐｂフリー化が望まれている。このために、純ＳｎめっきやＰｂを含まない錫合金系のめっきが検討されている。しかし純錫めっき（以下、Ｓｎめっき）やＰｂを含まないＳｎ合金めっき（以下、Ｓｎ合金めっき）の場合、銅配線端子部をコネクタと嵌合して使用すると、コネクタのピンによって押付けられた箇所の周辺のめっき皮膜から、ウイスカーと称する髭状の結晶が急速に発生してくることが、純ＳｎめっきやＰｂを含まないＳｎ系合金めっきに於いて顕著であることも判ってきた。このようなウイスカーの発生は、配線どうしの短絡につながる問題がある。このため、発生するウイスカーの長さを抑制する種々の表面処理が提案されている。しかしながら、純Ｓｎ系めっきを使用する限り、ウイスカーの発生をゼロにすることはできなかった。そこで、ＦＦＣ端子部は、Ｐｂを含有せず、配線端子部をコネクタ嵌合しても銅によるマイグレーションを完全に防止しウイスカーが発生せず、また挿抜特性にも優れたものであることが望まれている。 Components and wiring boards used in electronic devices and the like use copper or copper alloy for the wiring portion. When these are electrically connected to other wiring boards or the like, many connectors are connected in addition to joining by metal bonding such as soldering or ultrasonic bonding. In particular, when a connector is connected, the copper wiring terminal portion is subjected to a surface treatment in order to reduce the contact resistance between the wiring and the connector to eliminate the conduction failure. Generally, it is an electroplating process with a tin-lead alloy (hereinafter, Sn—Pb alloy). However, in the plating treatment with an alloy containing Pb, there is a problem that Pb is eluted by acid rain or the like and pollutes the environment, and Pb-free is desired. For this reason, pure Sn plating and tin alloy plating not containing Pb have been studied. However, in the case of pure tin plating (hereinafter referred to as Sn plating) or Sn alloy plating that does not contain Pb (hereinafter referred to as Sn alloy plating), when the copper wiring terminal portion is fitted to the connector and used, the portion pressed by the connector pin It has also been found that the fact that whisker-like crystals called whiskers are rapidly generated from the plating film in the vicinity of is remarkable in pure Sn plating and Sn-based alloy plating not containing Pb. The generation of such whiskers has a problem that leads to a short circuit between the wirings. For this reason, various surface treatments that suppress the length of the generated whiskers have been proposed. However, as long as pure Sn-based plating was used, the generation of whiskers could not be made zero. Therefore, it is hoped that the FFC terminal part does not contain Pb, and even if the wiring terminal part is fitted to the connector, migration due to copper is completely prevented, whiskers are not generated, and the insertion / extraction characteristics are excellent. It is rare.
このため、コネクタ嵌合する配線端子部の表面処理として、端末部の錫めっきを除去した後、ニッケルめっき（以下、Ｎｉめっき）を介して金めっき（以下、Ａｕめっき）を施すことが考えられている。例えば、特許文献１に見られるような方法である。すなわち、錫めっきが施された複数本の平角銅導体を平行に並べて絶縁フィルムで被覆し、少なくとも一方の端部に電気コネクタと接続する接続端末部を形成したＦＦＣで、接続端末部の接続導体は錫めっきが除去され、このＳｎめっきが除去された部分にＮｉメッキを介してＡｕめっきが施されたものである。これによって、ケーブルの導体部分は柔軟性を有しマイグレーション発生がなく、接続部分はＡｕめっきが施されているので高信頼性のあるフラットケーブルが製造できるとしている。しかしがら、Ｓｎめっきを除去する工程が必要となるため製造コストが増加する。また、このようなＳｎメッキの除去作業によって接続端末部のＳｎも若干溶解するという問題が生じる。
よって本発明が解決しようとする課題は、Ｓｎめっきが施された複数本の平角銅導体（以下、平角Ｃｕ導体）上に、Ｎｉめっき層、Ａｕめっき層を施したＦＦＣ端子部をコネクタ嵌合して使用した場合に、Ｃｕによるマイグレーションの発生がなく、また繰返しの挿抜特性（接触抵抗の増加が少ない）に優れると共にクラックが生じ難く、腐食環境下での耐食性（接触抵抗の著しい増加がない）に優れたＦＦＣ端子部を提供することにある。 Therefore, the problem to be solved by the present invention is that the FFC terminal portion provided with the Ni plating layer and the Au plating layer on the plurality of flat copper conductors (hereinafter referred to as flat Cu conductors) subjected to Sn plating is connector-fitted. When used, the occurrence of migration due to Cu does not occur, it is excellent in repeated insertion / extraction characteristics (increase in contact resistance is small) and cracks are difficult to occur, and corrosion resistance in a corrosive environment (no significant increase in contact resistance) ) To provide an excellent FFC terminal portion.
前記解決しようとする課題は、請求項１に記載されるように、厚さ０．２μｍ以上１．５μｍ未満の錫めっきが施された複数本の平角Ｃｕ導体が、必要な間隔で接着剤付絶縁テープによってラミネートされて平行に配置され、かつその端部には導体露出部が形成され、前記導体露出部の錫めっき平角Ｃｕ導体には、厚さ０．３〜５．０μｍのニッケルめっき層、ついで厚さ０．０３〜１．００μｍの金めっき層が施されコネクタと嵌合して使用されるＦＦＣ端子部とすることによって、解決される。 The problem to be solved is that, as described in claim 1, a plurality of flat rectangular Cu conductors having a thickness of 0.2 μm or more and less than 1.5 μm are coated with an adhesive at a necessary interval. Laminated by an insulating tape and arranged in parallel, and a conductor exposed portion is formed at an end thereof, and a nickel plating layer having a thickness of 0.3 to 5.0 μm is formed on the tin-plated rectangular Cu conductor of the conductor exposed portion. Then, a gold plating layer having a thickness of 0.03 to 1.00 μm is applied, and the FFC terminal portion is used by being fitted to the connector.
以上のような本発明によれば、厚さ０．２μｍ以上１．５μｍ未満のＳｎめっきが施された複数本の平角Ｃｕ導体上に、厚さ０．３〜５．０μｍのＮｉめっき層、ついで厚さ０．０３〜１．００μｍのＡｕめっき層を施したＦＦＣ端子部としたので、Ｃｕによるマイグレーションの発生がなく、またウイスカー問題がない。さらに、接触抵抗の増加が少なく、クラックが生じにくい繰返しの挿抜特性に優れると共に、耐食性に優れているので腐食環境下での接触抵抗の著しい増加のないＦＦＣ端子部が得られる。このため、コネクタと嵌合して使用してもウイスカーの発生による問題がなく、導体間の距離が狭いＦＦＣ端子部であっても問題なく使用できる。さらに、本発明のＦＦＣ端子部では、Ｐｂによる環境汚染の問題もない。 According to the present invention as described above, a Ni plating layer having a thickness of 0.3 to 5.0 μm on a plurality of flat Cu conductors to which Sn plating having a thickness of 0.2 μm or more and less than 1.5 μm is applied, Next, since the FFC terminal portion is provided with an Au plating layer having a thickness of 0.03 to 1.00 μm, there is no migration due to Cu and there is no whisker problem. Furthermore, the contact resistance does not increase so much, and it is excellent in repeated insertion / extraction characteristics in which cracks do not easily occur, and it has excellent corrosion resistance. For this reason, even if it fits and uses with a connector, there is no problem by generation of a whisker, and even if it is an FFC terminal part with a short distance between conductors, it can be used without a problem. Furthermore, in the FFC terminal portion of the present invention, there is no problem of environmental contamination due to Pb.
以下に本発明を詳細に説明する。請求項１に記載する発明は、厚さ０．２μｍ以上１．５μｍ未満の錫めっきが施された複数本の平角Ｃｕ導体が、必要な間隔で接着剤付絶縁テープによってラミネートされて平行に配置され、かつその端部には導体露出部が形成され、前記導体露出部の錫めっき平角Ｃｕ導体には、厚さ０．３〜５．０μｍのニッケルめっき層、ついで厚さ０．０３〜１．００μｍの金めっき層が施されコネクタと嵌合して使用されるＦＦＣ端子部である。 The present invention is described in detail below. In the first aspect of the present invention, a plurality of flat Cu conductors plated with tin with a thickness of 0.2 μm or more and less than 1.5 μm are laminated in parallel by an insulating tape with an adhesive at a necessary interval and arranged in parallel. In addition, a conductor exposed portion is formed at the end, and a tin plated rectangular Cu conductor of the conductor exposed portion has a nickel plated layer having a thickness of 0.3 to 5.0 μm, and then a thickness of 0.03 to 1 This is an FFC terminal portion that is used by being mated with a connector to which a gold plating layer of .00 μm is applied.
このような発明に至ったのは、従来のようにＳｎめっきが施された複数本の平角Ｃｕ導体を平行に並べて絶縁フィルムで被覆し、少なくとも一方の端部に電気コネクタと接続する端子部を形成したＦＦＣに於いて、前記端子部の接続導体はＳｎめっきを除去しＳｎめっきが除去された部分にＮｉメッキを介してＡｕめっきを施したＦＦＣ端子部である。このようなＦＦＣ端子部は、Ｓｎめっきを除去するための工程が必要なため製造コストが高くなり問題であった。また、Ｎｉめっき層やＡｕめっき層の厚さを特定しないと、耐食性の問題や材料コストの上昇問題等があり好ましくないものであった。 Such an invention has been achieved by arranging a plurality of flat-angle Cu conductors plated with Sn as in the prior art in parallel and covering with an insulating film, and at least one end portion having a terminal portion connected to the electrical connector. In the formed FFC, the connection conductor of the terminal portion is an FFC terminal portion in which Sn plating is removed and the portion where the Sn plating is removed is subjected to Au plating via Ni plating. Such an FFC terminal is problematic because it requires a process for removing Sn plating, which increases the manufacturing cost. Further, unless the thickness of the Ni plating layer or the Au plating layer is specified, there is a problem of corrosion resistance, an increase in material cost, and the like, which is not preferable.
これに対して本発明のＦＦＣ端子部は、Ｓｎめっきが施された所定の径の銅線が、Ｓｎめっき層の厚さが０．２μｍ以上１．５μｍ未満となるように所望の平角Ｃｕ導体に加工され、通常、焼鈍処理が行われＳｎめっき平角Ｃｕ導体とされる。そして、例えば予め導体露出部が形成された接着剤付絶縁テープによって、前記Ｓｎめっき平角Ｃｕ導体が必要な間隔で平行に配置、ラミネートされて導体露出部を有するＦＦＣとし、前記導体露出部のＳｎめっき平角Ｃｕ導体上に厚さ０．３〜５．０μｍのＮｉめっき層、その上には厚さ０．０３〜１．００μｍのＡｕめっき層を形成することによって、前述した問題がないＦＦＣ端子部とすることができる。 On the other hand, the FFC terminal portion of the present invention has a desired rectangular Cu conductor so that the Sn-plated copper wire with a predetermined diameter has a Sn plating layer thickness of 0.2 μm or more and less than 1.5 μm. Usually, annealing treatment is performed to obtain a Sn-plated flat Cu conductor. For example, the Sn plated flat Cu conductors are arranged in parallel at a necessary interval and laminated to form an FFC having a conductor exposed portion by using an insulating tape with an adhesive in which a conductor exposed portion is previously formed, and Sn of the conductor exposed portion is formed. By forming a Ni plating layer with a thickness of 0.3 to 5.0 μm on a plated rectangular Cu conductor and forming an Au plating layer with a thickness of 0.03 to 1.00 μm thereon, an FFC terminal that does not have the above-mentioned problems Part.
以上のようなＦＦＣ端子部は、厚さ０．２μｍ以上１．５μｍ未満のＳｎめっきが施された平角Ｃｕ導体を使用するので、ウイスカーの発生がない耐マイグレーション性に優れたものとなる。また、Ｓｎめっき層の厚さを１．５μｍ未満のＳｎめっき層とすることによって、コネクタ嵌合した場合にもその押圧によってＮｉめっき層が陥没して亀裂を発生させて、Ｓｎめっき層が露出して耐食性が低下することもない。具体的には、腐食環境下で通電した後にマイグレーション試験を行った時に、マイグレーション発生閾値を＜５．０×１０５Ωとした場合、試験中にこの値を下回ることがない特性を有することになる。さらに、Ｎｉめっき層の厚さを０．３〜５．０μｍとしたので、下層のＳｎがＮｉめっき層中に拡散して耐食性を損なうことがなく、上限厚さを５．０μｍまでとすることにより、コネクタ嵌合時の挿抜作業を繰り返し受けてもクラックが生じないことになる。さらに、Ａｕめっき層厚を０．０３〜１．００μｍとしたので、耐食性や挿抜作業を繰り返しうけても十分にその作業性を有するものである。より具体的に説明すると、コネクタに嵌合し後腐食ガス試験を行った場合に、腐食ガス試験前の接触抵抗値に対して２０％未満の増加率を維持できるものである。また上限を１．００μｍとしたので材料コスト的にも実用範囲のＦＦＣ端子部である。 Since the FFC terminal portion as described above uses a flat Cu conductor on which Sn plating having a thickness of 0.2 μm or more and less than 1.5 μm is applied, it has excellent migration resistance without generation of whiskers. In addition, when the Sn plating layer has a thickness of less than 1.5 μm, even when the connector is fitted, the Ni plating layer sinks and cracks are generated by the pressing, and the Sn plating layer is exposed. Thus, the corrosion resistance is not lowered. Specifically, when conducting a migration test after energization in a corrosive environment, if the migration occurrence threshold is set to <5.0 × 10 5 Ω, it has a characteristic that does not fall below this value during the test. Become. Furthermore, since the thickness of the Ni plating layer is set to 0.3 to 5.0 μm, the lower layer Sn does not diffuse into the Ni plating layer and the corrosion resistance is not impaired, and the upper limit thickness is set to 5.0 μm. Thus, cracks do not occur even when the insertion / extraction work at the time of connector fitting is repeated. Furthermore, since the Au plating layer thickness is set to 0.03 to 1.00 μm, the workability is sufficiently obtained even if the corrosion resistance and insertion / extraction operations are repeated. More specifically, when the post-corrosion gas test is performed after fitting to the connector, an increase rate of less than 20% can be maintained with respect to the contact resistance value before the corrosive gas test. Further, since the upper limit is set to 1.00 μm, the FFC terminal portion is in a practical range in terms of material cost.
表１に記載した実施例並びに比較例によって、本発明の効果を確認した。すなわち、Ｓｎめっきを施したＣｕ線を幅０．３ｍｍ、厚さ０．０５ｍｍの平角状に加工してＳｎめっき平角Ｃｕ導体とした。これを４０本並列に配置し、ポリエステル系の熱可塑性接着剤がコーティングされたポリエステル製絶縁テープで、コネクタに接続される端子部を除いてラミネート加工を行いＦＦＣを作製した。その後、前記Ｓｎめっき平角Ｃｕ導体上に、Ｎｉめっき層、Ａｕめっき層を順次施して試料とした。 The effects of the present invention were confirmed by the examples and comparative examples described in Table 1. In other words, the Sn-plated Cu wire was processed into a rectangular shape having a width of 0.3 mm and a thickness of 0.05 mm to obtain a Sn-plated rectangular Cu conductor. Forty pieces of these were arranged in parallel and laminated with a polyester insulating tape coated with a polyester-based thermoplastic adhesive, except for the terminal portion connected to the connector, to produce an FFC. Thereafter, a Ni plating layer and an Au plating layer were sequentially applied on the Sn plated flat Cu conductor to prepare a sample.
ついでこの試料を、Ａｕ／Ｎｉめっき（Ａｕめっき厚さが０．３μｍ、Ｎｉめっき厚さが３μｍ）したノンＺＩＦタイプのコネクタに嵌合し、硫化水素１０ｐｐｍ、湿度８５％の雰囲気中に４８時間放置して、腐食ガス試験を行った。ついで、接触抵抗を測定した。腐食ガス試験前の接触抵抗値に対して、２０％未満の増加率のものを合格として〇印で、２０％以上の増加率のものを不合格として×印で記載した。一方、前記ＦＦＣ端末部と前記コネクタの挿抜を３０回繰り返した後の接触抵抗を測定した。またクラックの有無について確認した。挿抜前の接触抵抗値に対する増加率を計算した。挿抜前の接触抵抗値に対して２０％未満の増加率のものを合格として〇印で、２０％以上の増加率のものを不合格として×印で記載した。めっき層のクラックの発生状態を顕微鏡によって観察しクラックの発生が全く見られない場合を合格として〇印で、クラックの発生が見られる場合を不合格として、×印で記載した。さらに、８０℃、８５％ＲＨ、印加電圧６０Ｖで２４０時間曝した後のマイグレーション試験を行った。試験は、絶縁抵抗劣化システム（楠本化成社のＳＩＲ１２）を用い、８０ｍｓで抵抗値をモニタし、マイグレーション発生閾値を＜５．０×１０５Ωとし、試験中にこの値を下回った場合を不合格として×印で、下回らなかった場合を合格として〇印で記載した。結果を表１に示した。 Next, this sample was fitted into a non-ZIF type connector plated with Au / Ni (Au plating thickness: 0.3 μm, Ni plating thickness: 3 μm), and in an atmosphere of 10 ppm hydrogen sulfide and 85% humidity for 48 hours. The corrosive gas test was conducted by leaving it alone. Subsequently, the contact resistance was measured. With respect to the contact resistance value before the corrosive gas test, those with an increase rate of less than 20% are indicated as ◯, and those with an increase rate of 20% or more are indicated as x with a failure. On the other hand, the contact resistance after repeating insertion and removal of the FFC terminal part and the connector 30 times was measured. The presence or absence of cracks was also confirmed. The increase rate with respect to the contact resistance value before insertion / extraction was calculated. Those with an increase rate of less than 20% with respect to the contact resistance value before insertion / removal are indicated as ◯, and those with an increase rate of 20% or more are indicated as x with a failure. The state of occurrence of cracks in the plating layer was observed with a microscope, and a case where no cracks were observed was marked as “good”, and a case where cracks were observed was marked as “bad”. Further, a migration test was conducted after exposure for 240 hours at 80 ° C., 85% RH, and an applied voltage of 60V. The test uses an insulation resistance degradation system (Enomoto Kasei Co., Ltd. SIR12), monitors the resistance value at 80 ms, sets the migration occurrence threshold to <5.0 × 10 5 Ω, and fails if the value falls below this value during the test. The case where it was not lower than “x” as a pass was indicated as “◯” as a pass. The results are shown in Table 1.
表１の実施例１〜９に示されるように、少なくともコネクタと嵌合されるＦＦＣ端子部のＣｕ或いはＣｕ合金配線上に、厚さ０．２μｍ以上１．５μｍ未満のＳｎめっきが施された複数本の平角Ｃｕ導体上に、厚さ０．３〜５．０μｍのＮｉめっき層、ついで厚さ０．０３〜１．００μｍのＡｕめっき層を施したＦＦＣ端子部としたものは、コネクタに嵌合後、硫化水素１０ｐｐｍ、湿度８５％の雰囲気中に４８時間放置した接触抵抗が、腐食ガス試験前の接触抵抗値に対して、２０％未満の増加率である。また、前記コネクタとの挿抜を３０回繰り返した後の接触抵抗が、挿抜前の接触抵抗値に対する増加率として２０％未満であった。またクラックの有無について顕微鏡によって観察したが、全くクラックは見られなかった。さらに、８０℃、８５％ＲＨ、印加電圧６０Ｖで２４０時間曝した後のマイグレーション試験を行った結果、マイグレーション発生閾値を＜５．０×１０５Ωとした場合、試験中にこの値を下回ったものは見られなかった。 As shown in Examples 1 to 9 in Table 1, Sn plating having a thickness of 0.2 μm or more and less than 1.5 μm was applied on at least the Cu or Cu alloy wiring of the FFC terminal portion fitted to the connector. An FFC terminal portion in which a Ni plating layer having a thickness of 0.3 to 5.0 μm and then an Au plating layer having a thickness of 0.03 to 1.00 μm is formed on a plurality of flat Cu conductors is used as a connector. After fitting, the contact resistance left for 48 hours in an atmosphere of 10 ppm hydrogen sulfide and 85% humidity is an increase rate of less than 20% with respect to the contact resistance value before the corrosive gas test. Moreover, the contact resistance after repeating insertion / extraction with the said connector 30 times was less than 20% as an increase rate with respect to the contact resistance value before insertion / extraction. The presence or absence of cracks was observed with a microscope, but no cracks were observed. Furthermore, as a result of performing a migration test after exposure for 240 hours at 80 ° C., 85% RH, and an applied voltage of 60 V, when the migration occurrence threshold was set to <5.0 × 10 5 Ω, this value was lower during the test. Nothing was seen.
すなわち、実施例１に見られるように、Ｓｎめっき層の厚さが０．２２μｍで、Ｎｉめっき層の厚さが０．３５μｍ、Ａｕめっき層の厚さが０．０４０μｍのものは、腐食ガス試験前の接触抵抗値に対して２０％未満の増加率であり、コネクタ嵌合に於ける挿抜前の接触抵抗値に対する増加率も２０％未満であった。またクラックも全く見られなかった。さらに、マイグレーション発生閾値を＜５．０×１０５Ωとした場合に、試験中にこの値を下回るものは見られず、全ての項目に合格した。また、実施例２に見られるように、Ｓｎめっき層の厚さが０．２２μｍで、Ｎｉめっき層の厚さが０．３５μｍ、Ａｕめっき層の厚さが０．９４０μｍのものも、同様であった。さらに、実施例３のように、Ｓｎめっき層の厚さが０．２２μｍで、Ｎｉめっき層の厚さが４．７０μｍ、Ａｕめっき層の厚さが０．０３５μｍのものも、全ての項目に合格であった。また、実施例４のように、Ｓｎめっき層の厚さが０．２２μｍで、Ｎｉめっき層の厚さが４．７０μｍ、Ａｕめっき層の厚さが０．９２０μｍのものも、全ての項目に合格であった。さらに、実施例５に見られるように、Ｓｎめっき層の厚さが１．４０μｍで、Ｎｉめっき層の厚さが０．３５μｍ、Ａｕめっき層の厚さが０．０３５μｍのものも、全ての項目に合格であった。また、実施例６のように、Ｓｎめっき層の厚さが１．４０μｍで、Ｎｉめっき層の厚さが４．５０μｍ、Ａｕめっき層の厚さが０．０５０μｍのものも、全ての項目に合格であった。さらに、実施例７および８のように、Ｓｎめっき層の厚さが０．８０μｍであって、Ｎｉめっき層の厚さが２．０５μｍおよび０．３１μｍ、Ａｕめっき層の厚さが０．１５０μｍのものも、全ての項目に合格であった。また、実施例９のように、Ｓｎめっき層の厚さが０．８０μｍで、Ｎｉめっき層の厚さが２．０５μｍ、Ａｕめっき層の厚さが０．９８０μｍのものも、全ての項目に合格であった。 That is, as seen in Example 1, the Sn plating layer thickness is 0.22 μm, the Ni plating layer thickness is 0.35 μm, and the Au plating layer thickness is 0.040 μm. It was an increase rate of less than 20% with respect to the contact resistance value before the test, and the increase rate with respect to the contact resistance value before insertion / extraction in connector fitting was also less than 20%. Also, no cracks were seen. Furthermore, when the migration occurrence threshold was set to <5.0 × 10 5 Ω, nothing lower than this value was found during the test, and all items passed. Further, as seen in Example 2, the same applies to the Sn plating layer thickness of 0.22 μm, the Ni plating layer thickness of 0.35 μm, and the Au plating layer thickness of 0.940 μm. there were. Further, as in Example 3, the Sn plating layer thickness is 0.22 μm, the Ni plating layer thickness is 4.70 μm, and the Au plating layer thickness is 0.035 μm. It was a pass. Further, as in Example 4, the Sn plating layer thickness is 0.22 μm, the Ni plating layer thickness is 4.70 μm, and the Au plating layer thickness is 0.920 μm. It was a pass. Further, as seen in Example 5, the Sn plating layer thickness is 1.40 μm, the Ni plating layer thickness is 0.35 μm, and the Au plating layer thickness is 0.035 μm. The item passed. Further, as in Example 6, the Sn plating layer thickness is 1.40 μm, the Ni plating layer thickness is 4.50 μm, and the Au plating layer thickness is 0.050 μm. It was a pass. Further, as in Examples 7 and 8, the thickness of the Sn plating layer was 0.80 μm, the thickness of the Ni plating layer was 2.05 μm and 0.31 μm, and the thickness of the Au plating layer was 0.150 μm. Also passed all items. Also, as in Example 9, the Sn plating layer thickness was 0.80 μm, the Ni plating layer thickness was 2.05 μm, and the Au plating layer thickness was 0.980 μm. It was a pass.
これに対して、比較例１〜９に示す本発明の範囲を外れたＦＦＣ端子部は、腐食ガス試験前の接触抵抗値に対する増加率、コネクタ嵌合に於ける挿抜前の接触抵抗値に対する増加率、またクラックの発生、マイグレーション発生閾値のいずれかが不合格であった。すなわち、比較例１〜３のようにＳｎめっき層の厚さが０．１７μｍと薄い場合は、いずれもマイグレーション発生閾値を＜５．０×１０５Ωとした場合に、試験中にこの値を下回った。また、比較例４〜６のように、Ｓｎめっき層が１．６０μｍと厚すぎる場合は、腐食ガス試験前の接触抵抗値に対して２０％以上増加した。さらに、実施例７のように、Ｎｉめっき層の厚さが０．２５μｍと薄い場合にも、腐食ガス試験前の接触抵抗値に対して２０％以上増加した。また、比較例８のように、Ｎｉめっき層の厚さが５．３０μｍと厚い場合は、めっき層にクラックが見られた。さらに、比較例９のように、Ａｕめっき層が０．０２０μｍのように薄いと、腐食ガス試験前の接触抵抗値に対する増加率、コネクタ嵌合に於ける挿抜前の接触抵抗値に対する増加率のいずれも２０％以上増加して不合格であった。 On the other hand, the FFC terminal portion outside the scope of the present invention shown in Comparative Examples 1 to 9 has an increase rate with respect to the contact resistance value before the corrosive gas test, and an increase with respect to the contact resistance value before insertion / extraction in connector fitting. Any of the rate, the occurrence of cracks, and the threshold for occurrence of migration failed. That is, when the thickness of the Sn plating layer is as thin as 0.17 μm as in Comparative Examples 1 to 3, this value was set during the test when the migration occurrence threshold was set to <5.0 × 10 5 Ω. Below. Moreover, when Sn plating layer was too thick with 1.60 micrometers like Comparative Examples 4-6, it increased by 20% or more with respect to the contact resistance value before a corrosive gas test. Furthermore, as in Example 7, even when the thickness of the Ni plating layer was as thin as 0.25 μm, the contact resistance value before the corrosive gas test increased by 20% or more. Moreover, when the thickness of the Ni plating layer was as thick as 5.30 μm as in Comparative Example 8, cracks were found in the plating layer. Further, as in Comparative Example 9, when the Au plating layer is as thin as 0.020 μm, the increase rate with respect to the contact resistance value before the corrosive gas test and the increase rate with respect to the contact resistance value before insertion / extraction in connector fitting All increased by 20% or more and failed.
本発明のように、厚さ０．２μｍ以上１．５μｍ未満のＳｎめっきが施された複数本の平角Ｃｕ導体上に、厚さ０．３〜５．０μｍのニッケルめっき層、ついで厚さ０．０３〜１．００μｍのＡｕめっき層を施した導体露出部を有するＦＦＣ端子部は、ＦＦＣ端子部をコネクタ嵌合して使用した場合にＣｕによるマイグレーションの発生がなく、また繰返しの挿抜特性に優れると共にクラックが生じ難く、腐食環境下での耐食性に優れたＦＦＣ端子部を提供でき、種々の電子機器類に使用することが可能である。 As in the present invention, a nickel plating layer having a thickness of 0.3 to 5.0 μm is formed on a plurality of flat Cu conductors to which Sn plating having a thickness of 0.2 μm or more and less than 1.5 μm is applied. The FFC terminal part with the exposed conductor part with the Au plating layer of 0.03 to 1.00 μm has no occurrence of migration due to Cu when the FFC terminal part is used with the connector fitted, and repeatable insertion / extraction characteristics An FFC terminal portion that is excellent in resistance to cracking and excellent in corrosion resistance in a corrosive environment can be provided, and can be used in various electronic devices.
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