JP4856399B2 - 液晶表示装置のtft素子電極形状 - Google Patents
液晶表示装置のtft素子電極形状 Download PDFInfo
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- JP4856399B2 JP4856399B2 JP2005192589A JP2005192589A JP4856399B2 JP 4856399 B2 JP4856399 B2 JP 4856399B2 JP 2005192589 A JP2005192589 A JP 2005192589A JP 2005192589 A JP2005192589 A JP 2005192589A JP 4856399 B2 JP4856399 B2 JP 4856399B2
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- tft element
- gate
- width
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 22
- 230000003071 parasitic effect Effects 0.000 claims description 17
- 239000011159 matrix material Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000035515 penetration Effects 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0247—Flicker reduction other than flicker reduction circuits used for single beam cathode-ray tubes
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal Display Device Control (AREA)
Description
Vgh:ゲート電圧のオンレベル
Vgl:ゲート電圧のオフレベル
Cgs:ゲート・ソース間の寄生容量
Clc:画素容量
Cs:蓄積容量
10a・・ゲート線突出部
20・・・データ線
30・・・アモルファス半導体パッチ
40・・・ドレイン電極
50・・・ソース電極
60・・・画素電極
60a・・蓄積容量部
Claims (2)
- 第1と第2の基板間に配置された液晶、
前記第1の基板上でマトリックス状に配置された、表示領域を画成しているゲート線とデータ線、
前記第1の基板上で、前記ゲート線とデータ線の交点各々に規定された画素領域内に形成された画素電極、
前記第1又は第2の基板上で、前記画素電極との間に液晶駆動電圧を印加するよう形成された共通電極、
前記表示領域の外側に設けられ、前記ゲート線各々を順次走査するよう、前記ゲート線にゲート信号を印加するゲートドライバ、
前記表示領域の外側に設けられ、前記データ線各々にデータ信号を印加するデータドライバ、及び
前記画素領域各々に設けられたTFT素子であって、前記ゲート線上のゲート信号によってオンになったとき、前記データ線上のデータ信号を前記画素電極に印加するTFT素子とからなるアクティブマトリックス液晶表示装置において、
前記TFT素子は、前記ゲート線上に配置されたアモルファス半導体パッチ、前記パッチ上に配置されたドレイン電極とソース電極とからなり、
前記ドレイン電極の形状は、互いに向き合う第1及び第2の側面、前記第1及び第2の側面を接続する第3の側面、並びに第1乃至第3の辺によって囲まれたへこみ部分を含む凹形であり、
前記ソース電極の少なくとも一部は、前記ドレイン電極のへこみ部分に入り、
前記TFT素子は、前記ゲートドライバから第1の距離で配置されている第1のTFT素子及び前記ゲートドライバから第1の距離より長い第2の距離で配置されている第2のTFT素子を含み、
前記第2のTFT素子が前記第1のTFT素子より大きいゲート・ソース寄生容量を有するように、前記第2のTFT素子のソース電極の幅は前記第1のTFT素子のソース電極の幅より広く、
前記第2のTFT素子のチャネルギャップL″が前記第1のTFT素子のチャネルギャップL′と同じになるように、前記第2のTFT素子のドレイン電極の第1及び第2の辺の幅は、前記第1のTFT素子のドレイン電極の第1及び第2の辺の幅より狭くて、前記第2のTFT素子のドレイン電極の第3の辺の幅は、前記第1のTFT素子のドレイン電極の第3の辺の幅より狭く、
前記第2のTFT素子のチャネル幅W″が前記第1のTFT素子のチャネル幅W′と同じになるように、前記第2のTFT素子のドレイン電極の第1及び第2の辺の長さは、前記第1のTFT素子のドレイン電極の第1及び第2の辺の長さより短く、
前記第1及び第2のTFT素子のドレイン電極が同じ幅Dを有するように、前記第2のTFT素子のドレイン電極の第1及び第2の辺は、前記第1のTFT素子のドレイン電極の第1及び第2の辺より長い距離互いに離れて配置されているアクティブマトリックス液晶表示装置。 - 請求項1に記載のアクティブマトリックス液晶表示装置において、前記ゲートドライバの位置からの距離に関わらず、前記TFT素子各々の前記ゲート線に与える負荷容量が一定であるアクティブマトリックス液晶表示装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005192589A JP4856399B2 (ja) | 2005-06-30 | 2005-06-30 | 液晶表示装置のtft素子電極形状 |
KR1020050078211A KR101166830B1 (ko) | 2005-06-30 | 2005-08-25 | 액티브 매트릭스 액정표시장치 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2005192589A JP4856399B2 (ja) | 2005-06-30 | 2005-06-30 | 液晶表示装置のtft素子電極形状 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007011056A JP2007011056A (ja) | 2007-01-18 |
JP4856399B2 true JP4856399B2 (ja) | 2012-01-18 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005192589A Expired - Fee Related JP4856399B2 (ja) | 2005-06-30 | 2005-06-30 | 液晶表示装置のtft素子電極形状 |
Country Status (2)
Country | Link |
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JP (1) | JP4856399B2 (ja) |
KR (1) | KR101166830B1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20090054572A (ko) | 2007-11-27 | 2009-06-01 | 삼성전자주식회사 | 표시 장치 |
CN101750826B (zh) * | 2009-12-28 | 2011-09-14 | 深超光电(深圳)有限公司 | 像素结构 |
KR102097024B1 (ko) | 2013-01-04 | 2020-04-06 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 |
KR102128969B1 (ko) | 2014-02-17 | 2020-07-02 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
TWI545381B (zh) * | 2014-05-21 | 2016-08-11 | 群創光電股份有限公司 | 顯示裝置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05232512A (ja) * | 1992-02-25 | 1993-09-10 | Sanyo Electric Co Ltd | 液晶表示装置 |
JP2001075127A (ja) * | 1999-09-03 | 2001-03-23 | Matsushita Electric Ind Co Ltd | アクティブマトッリクス型液晶表示素子及びその製造方法 |
JP2002072250A (ja) * | 2000-04-24 | 2002-03-12 | Matsushita Electric Ind Co Ltd | 表示装置およびその駆動方法 |
KR20020042898A (ko) * | 2000-12-01 | 2002-06-08 | 구본준, 론 위라하디락사 | 액정표시장치용 어레이기판과 그 제조방법 |
TWI287132B (en) * | 2001-11-23 | 2007-09-21 | Chi Mei Optoelectronics Corp | A liquid crystal display having reduced flicker |
-
2005
- 2005-06-30 JP JP2005192589A patent/JP4856399B2/ja not_active Expired - Fee Related
- 2005-08-25 KR KR1020050078211A patent/KR101166830B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR101166830B1 (ko) | 2012-07-19 |
JP2007011056A (ja) | 2007-01-18 |
KR20070003497A (ko) | 2007-01-05 |
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