JP4844716B2 - 無電解パラジウムめっき浴 - Google Patents
無電解パラジウムめっき浴 Download PDFInfo
- Publication number
- JP4844716B2 JP4844716B2 JP2005279180A JP2005279180A JP4844716B2 JP 4844716 B2 JP4844716 B2 JP 4844716B2 JP 2005279180 A JP2005279180 A JP 2005279180A JP 2005279180 A JP2005279180 A JP 2005279180A JP 4844716 B2 JP4844716 B2 JP 4844716B2
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- JP
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- Prior art keywords
- acid
- plating
- unsaturated carboxylic
- palladium
- plating bath
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/54—Contact plating, i.e. electroless electrochemical plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/745—Apparatus for manufacturing wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45664—Palladium (Pd) as principal constituent
Description
本発明の無電解パラジウムめっき浴は、パラジウム化合物と、錯化剤としてアンモニア及びアミン化合物から選ばれる少なくとも1種と、還元剤として次亜リン酸及び次亜リン酸塩から選ばれる次亜リン酸化合物を少なくとも1種と、不飽和カルボン酸、不飽和カルボン酸無水物、不飽和カルボン酸塩及び不飽和カルボン酸誘導体から選ばれる不飽和カルボン酸化合物を少なくとも1種とを含有するものである。
表2及び3に示される組成の無電解パラジウムめっき浴を調製し、めっき浴のめっき性能、めっき皮膜の特性及びめっき浴の安定性を以下の方法で評価した。更に、参考例1及び2並びに実施例1及び2においては、以下に記載の方法で50℃連続めっき試験を行った後のめっき浴を用いてめっき皮膜特性を評価した。結果を表2及び3に示す。
銅板(大きさ10cm×20cm 厚さ0.1mm)に対して、表1に示される処理(1)〜(5)〔前処理〕、及び処理(6)〜(8)〔めっき処理〕を施し、得られためっき皮膜の外観を目視にて評価し、外観ムラがない場合を「良」、外観ムラがある場合を「不良」とした。
銅板(大きさ10cm×20cm 厚さ0.1mm)に対して、表1に示される処理(1)〜(6)を施し、表2及び3に示される無電解パラジウムめっき浴(1L)に60分間浸漬し、形成されたパラジウム皮膜の厚さから析出速度を算出した。
銅板(大きさ10cm×20cm 厚さ0.1mm)に対して、表1に示される処理(1)〜(5)を施し、更に表1の(6)の無電解Ni−Pめっき浴を用いて膜厚5μmのNi−P皮膜を形成した後、表2及び3に示される無電解パラジウムめっき浴に浸漬し、パラジウム皮膜を連続形成した。なお、2時間経過毎にめっき浴中のパラジウムの減量分を補充した。
めっき浴500mlをポリエチレン製容器中に密閉したものを80℃恒温槽中で保存した。
めっき浴500mlをポリエチレン製容器中に密閉したものを室温で保存した。
Dage社製ボンドテスタSERIES4000により1条件につき20点評価し、合金層部分で断裂又は切断せずに、はんだ部分が切断した場合を「良」、合金層部分で一部でも断裂又は切断した場合を「不良」とした。なお、測定条件は以下のとおりである。
測定方式:ボールプルテスト
基板:上村工業(株)製BGA基板(パット径 φ0.5mm)
半田ボール:千住金属製 φ0.6mm Sn−3.0Ag−0.5Cu
リフロー:マルチリフロー(タムラ製作所製)
リフロー条件:Top 260℃
リフロー回数:1回及び5回
フラックス:千住金属製 529D−1(RMAタイプ)
テストスピード:170μm/秒
半田マウント後エージング:2〜3時間
K&S社製4524Aワイヤプルテスタによりワイヤボンディングを行い、Dage社製ボンドテスタSERIES4000により1条件につき10点評価し、第1又は第2ボンド部分で断裂又は切断せずに、ワイヤ自体が切断した場合を「良」、第1又は第2ボンド部分で一部でも断裂又は切断した場合を「不良」とした。なお、測定条件は以下のとおりである。
キャピラリー:40472−0010−3201
ワイヤ:1Mil−Gold
ステージ温度:180℃
超音波(mW):25(第1),115(第2)
ボンディング時間:(ミリ秒):36(第1),136(第2)
引っ張り力(gf):44(第1),70(第2)
ステップ(第1から第2への長さ):0.812mm
測定方式:ワイヤープルテスト
基板:上村工業(株)BGA基板
テストスピード:170μm/秒
Claims (1)
- パラジウム化合物と、錯化剤としてアンモニア及びアミン化合物から選ばれる少なくとも1種と、還元剤として次亜リン酸及び次亜リン酸塩から選ばれる少なくとも1種と、イタコン酸、シトラコン酸、メサコン酸及び桂皮酸並びにそれらの無水物、塩及び誘導体から選ばれる不飽和カルボン酸化合物を少なくとも1種とを含有することを特徴とする無電解パラジウムめっき浴。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005279180A JP4844716B2 (ja) | 2005-09-27 | 2005-09-27 | 無電解パラジウムめっき浴 |
US12/067,662 US7678183B2 (en) | 2005-09-27 | 2006-09-22 | Electroless palladium plating bath and electroless palladium plating method |
CN201410049533.9A CN103774127B (zh) | 2005-09-27 | 2006-09-22 | 无电镀钯浴和无电镀钯方法 |
TW095135224A TWI431151B (zh) | 2005-09-27 | 2006-09-22 | Electrolytic palladium plating and electroless palladium plating |
KR1020087008317A KR101297676B1 (ko) | 2005-09-27 | 2006-09-22 | 무전해 팔라듐 도금욕 및 무전해 팔라듐 도금 방법 |
EP06810440.5A EP1930472B1 (en) | 2005-09-27 | 2006-09-22 | Electroless palladium plating bath and electroless palladium plating method |
CNA2006800356378A CN101356299A (zh) | 2005-09-27 | 2006-09-22 | 无电镀钯浴和无电镀钯方法 |
PCT/JP2006/318827 WO2007037176A1 (ja) | 2005-09-27 | 2006-09-22 | 無電解パラジウムめっき浴及び無電解パラジウムめっき方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005279180A JP4844716B2 (ja) | 2005-09-27 | 2005-09-27 | 無電解パラジウムめっき浴 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011173492A Division JP2012001817A (ja) | 2011-08-09 | 2011-08-09 | 無電解パラジウムめっき浴及び無電解パラジウムめっき方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007092092A JP2007092092A (ja) | 2007-04-12 |
JP4844716B2 true JP4844716B2 (ja) | 2011-12-28 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005279180A Active JP4844716B2 (ja) | 2005-09-27 | 2005-09-27 | 無電解パラジウムめっき浴 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7678183B2 (ja) |
EP (1) | EP1930472B1 (ja) |
JP (1) | JP4844716B2 (ja) |
KR (1) | KR101297676B1 (ja) |
CN (2) | CN103774127B (ja) |
TW (1) | TWI431151B (ja) |
WO (1) | WO2007037176A1 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008184679A (ja) * | 2007-01-31 | 2008-08-14 | Okuno Chem Ind Co Ltd | 無電解パラジウムめっき用活性化組成物 |
JP2012511105A (ja) | 2008-12-05 | 2012-05-17 | オーエムジー、アメリカズ、インク | 無電解パラジウムめっき液及び使用法 |
KR101049236B1 (ko) * | 2009-01-08 | 2011-07-13 | 안병승 | 팔라듐을 이용한 무전해 도금방법 |
JP4511623B1 (ja) * | 2009-05-08 | 2010-07-28 | 小島化学薬品株式会社 | 無電解パラジウムめっき液 |
DE102010012204B4 (de) | 2010-03-19 | 2019-01-24 | MacDermid Enthone Inc. (n.d.Ges.d. Staates Delaware) | Verbessertes Verfahren zur Direktmetallisierung von nicht leitenden Substraten |
CN102605359A (zh) * | 2011-01-25 | 2012-07-25 | 台湾上村股份有限公司 | 化学钯金镀膜结构及其制作方法、铜线或钯铜线接合的钯金镀膜封装结构及其封装工艺 |
EP2581470B1 (en) * | 2011-10-12 | 2016-09-28 | ATOTECH Deutschland GmbH | Electroless palladium plating bath composition |
TWI479048B (zh) * | 2011-10-24 | 2015-04-01 | Kojima Chemicals Co Ltd | 無電解鈀敷液 |
JP6020070B2 (ja) * | 2011-11-17 | 2016-11-02 | Tdk株式会社 | 被覆体及び電子部品 |
KR20130055956A (ko) * | 2011-11-21 | 2013-05-29 | 삼성전기주식회사 | 무전해 팔라듐 도금액 |
EP2784182A1 (de) | 2013-03-28 | 2014-10-01 | Technische Universität Darmstadt | Ein Palladium-Abscheidungsbad und dessen Verwendung zur hochkontrollierten stromfreien Palladium-Abscheidung auf nanopartikulären Strukturen |
KR20160088414A (ko) * | 2013-11-21 | 2016-07-25 | 헤레우스 도이칠란트 게엠베하 운트 코. 카게 | 본딩용 코팅 와이어 |
EP3129526B1 (en) * | 2014-04-10 | 2019-08-07 | ATOTECH Deutschland GmbH | Plating bath composition and method for electroless plating of palladium |
US9603258B2 (en) * | 2015-08-05 | 2017-03-21 | Uyemura International Corporation | Composition and method for electroless plating of palladium phosphorus on copper, and a coated component therefrom |
TWI707061B (zh) * | 2015-11-27 | 2020-10-11 | 德商德國艾托特克公司 | 鈀之電鍍浴組合物及無電電鍍方法 |
US10941494B2 (en) * | 2017-05-18 | 2021-03-09 | Japan Pure Chemical Co., Ltd. | Electroless platinum plating solution and platinum film obtained using same |
CN108754467B (zh) * | 2018-06-27 | 2021-01-12 | 深圳市贝加电子材料有限公司 | 钌钯合金化学镀液及其施镀方法和应用 |
JP6572376B1 (ja) * | 2018-11-30 | 2019-09-11 | 上村工業株式会社 | 無電解めっき浴 |
CN109881173B (zh) * | 2019-04-25 | 2021-03-23 | 北京洁尔爽高科技有限公司 | 一种在镀银尼龙表面形成金属复合层的工艺及其制品 |
JP7407644B2 (ja) * | 2020-04-03 | 2024-01-04 | 上村工業株式会社 | パラジウムめっき液及びめっき方法 |
CN112301334B (zh) * | 2020-10-30 | 2021-09-10 | 吉安宏达秋科技有限公司 | 一种化学镀钯液及其应用、化学镀钯的方法 |
EP4215642A1 (en) * | 2022-01-25 | 2023-07-26 | Atotech Deutschland GmbH & Co. KG | Compostion for depositing a palladium coating on an activated copper-coated substrate |
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KR960005765A (ko) * | 1994-07-14 | 1996-02-23 | 모리시다 요이치 | 반도체 장치의 배선형성에 이용하는 무전해 도금욕 및 반도체 장치의 배선성형방법 |
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JP4117016B1 (ja) * | 2007-08-15 | 2008-07-09 | 小島化学薬品株式会社 | 無電解パラジウムめっき液 |
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2005
- 2005-09-27 JP JP2005279180A patent/JP4844716B2/ja active Active
-
2006
- 2006-09-22 KR KR1020087008317A patent/KR101297676B1/ko active IP Right Grant
- 2006-09-22 CN CN201410049533.9A patent/CN103774127B/zh active Active
- 2006-09-22 CN CNA2006800356378A patent/CN101356299A/zh active Pending
- 2006-09-22 WO PCT/JP2006/318827 patent/WO2007037176A1/ja active Application Filing
- 2006-09-22 EP EP06810440.5A patent/EP1930472B1/en active Active
- 2006-09-22 TW TW095135224A patent/TWI431151B/zh active
- 2006-09-22 US US12/067,662 patent/US7678183B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20080055888A (ko) | 2008-06-19 |
US7678183B2 (en) | 2010-03-16 |
CN103774127A (zh) | 2014-05-07 |
EP1930472B1 (en) | 2013-07-17 |
EP1930472A1 (en) | 2008-06-11 |
TW200726857A (en) | 2007-07-16 |
JP2007092092A (ja) | 2007-04-12 |
CN103774127B (zh) | 2016-02-24 |
TWI431151B (zh) | 2014-03-21 |
CN101356299A (zh) | 2009-01-28 |
EP1930472A4 (en) | 2012-01-04 |
KR101297676B1 (ko) | 2013-08-21 |
US20090133603A1 (en) | 2009-05-28 |
WO2007037176A1 (ja) | 2007-04-05 |
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