JP4826079B2 - 有機el素子の製造方法 - Google Patents
有機el素子の製造方法 Download PDFInfo
- Publication number
- JP4826079B2 JP4826079B2 JP2004276255A JP2004276255A JP4826079B2 JP 4826079 B2 JP4826079 B2 JP 4826079B2 JP 2004276255 A JP2004276255 A JP 2004276255A JP 2004276255 A JP2004276255 A JP 2004276255A JP 4826079 B2 JP4826079 B2 JP 4826079B2
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- Prior art keywords
- organic
- voltage
- panel
- layer
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000012044 organic layer Substances 0.000 claims description 31
- 230000032683 aging Effects 0.000 claims description 28
- 239000010410 layer Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 22
- 230000015556 catabolic process Effects 0.000 claims description 13
- 230000002950 deficient Effects 0.000 claims description 9
- 239000011521 glass Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000006378 damage Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- Electroluminescent Light Sources (AREA)
Description
V=3.6×10−3・C−0.5[V] (Cは有機EL素子の静電容量)
W=1/2・CV 2
C=ε・S/d
W=1/2・ε・S/d・V 2 ・・・(1)
尚、Wは静電エネルギー[J]、Cは静電容量[F]、Vは充電電圧(有機EL素子7の破壊,修復電圧に相当する)[V]、εは誘電率、Sは発光面積[m 2 ]、dは有機層5の膜厚[m]であり、括弧内は単位を示す。
上記式(1)からも分かるように、静電エネルギーWは、有機EL素子7の面積Sと膜厚dと充電電圧Vによって決まることが明らかである。
W=6.7×10 −6 [J](小数点第二位は四捨五入)
V=3.6×10 −3 ・C −0.5 [V]・・・・(2)
R<Vr<V
R<Vr<3.6×10 −3 ・C −0.5 ・・・(3)
2 ガラス基板(支持基板)
3 透明電極(陽極)
5 有機層
6 背面電極(陰極)
7 有機EL素子
11 異物
12 欠陥部
S1 素子形成工程(有機EL素子形成工程)
S3 エージング処理工程
Claims (1)
- 少なくとも発光層を有する有機層を陽極と陰極とで狭持した有機EL素子を透光性の支持基板上に形成してなる有機EL素子形成工程と、前記有機EL素子形成工程後に、前記陽極及び前記陰極からなる両電極間に所定の逆バイアス電圧からなる修復電圧Vrを印加し、前記有機EL素子の欠陥部を破壊するエージング処理工程とを含む有機EL素子の製造方法であって、
前記エージング処理工程の前記修復電圧Vrは、下記式にて求められる破壊電圧V未満に設定されてなることを特徴とする有機EL素子の製造方法。
V=3.6×10−3・C−0.5[V] (Cは有機EL素子の静電容量)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004276255A JP4826079B2 (ja) | 2004-09-24 | 2004-09-24 | 有機el素子の製造方法 |
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---|---|---|---|
JP2004276255A JP4826079B2 (ja) | 2004-09-24 | 2004-09-24 | 有機el素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006092886A JP2006092886A (ja) | 2006-04-06 |
JP4826079B2 true JP4826079B2 (ja) | 2011-11-30 |
Family
ID=36233676
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004276255A Expired - Fee Related JP4826079B2 (ja) | 2004-09-24 | 2004-09-24 | 有機el素子の製造方法 |
Country Status (1)
Country | Link |
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JP (1) | JP4826079B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4836718B2 (ja) * | 2006-09-04 | 2011-12-14 | オンセミコンダクター・トレーディング・リミテッド | エレクトロルミネッセンス表示装置の欠陥検査方法及び欠陥検査装置及びこれらを利用したエレクトロルミネッセンス表示装置の製造方法 |
JP4626649B2 (ja) * | 2007-12-21 | 2011-02-09 | ソニー株式会社 | 有機発光装置の製造方法 |
JP5263605B2 (ja) * | 2009-01-28 | 2013-08-14 | 日本精機株式会社 | マザーパネル及び有機elパネルの製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3562522B2 (ja) * | 2002-01-15 | 2004-09-08 | 株式会社デンソー | 有機el素子の製造方法 |
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2004
- 2004-09-24 JP JP2004276255A patent/JP4826079B2/ja not_active Expired - Fee Related
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Publication number | Publication date |
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JP2006092886A (ja) | 2006-04-06 |
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