JP4813929B2 - 固体撮像素子 - Google Patents
固体撮像素子 Download PDFInfo
- Publication number
- JP4813929B2 JP4813929B2 JP2006062712A JP2006062712A JP4813929B2 JP 4813929 B2 JP4813929 B2 JP 4813929B2 JP 2006062712 A JP2006062712 A JP 2006062712A JP 2006062712 A JP2006062712 A JP 2006062712A JP 4813929 B2 JP4813929 B2 JP 4813929B2
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- JP
- Japan
- Prior art keywords
- light
- solid
- photosensitive
- imaging device
- state imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000003384 imaging method Methods 0.000 claims description 32
- 239000011159 matrix material Substances 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 description 66
- 238000010586 diagram Methods 0.000 description 9
- 210000001747 pupil Anatomy 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
12 高感度部
14 低感度部
16 トランスファーゲート
18 列転送部
Claims (6)
- 被写界からの光が照射される面に第1の感光部と第2の感光部とがマトリックス状に複数配列され、第1の感光部の感光面積が第2の感光部の感光面積より広い固体撮像素子において、該固体撮像素子は、
第1の感光部の前記光が照射される側に設けられ、該光を集光する第1の集光手段と、
第2の感光部の前記光が照射される側に設けられ、該光を集光する第2の集光手段とを含み、
第2の集光手段の曲率は、第1の集光手段の曲率よりも小さいことを特徴とする固体撮像素子。 - 請求項1に記載の固体撮像素子において、該固体撮像素子はさらに、
第1の感光部と第1の集光手段との間に設けられ、第1の集光手段により集光された光をさらに集光する第3の集光手段と、
第2の感光部と第2の集光手段との間に設けられ、第2の集光手段により集光された光をさらに集光する第4の集光手段とを含み、
第4の集光手段の曲率は、第3の集光手段の曲率よりも小さいことを特徴とする固体撮像素子。 - 請求項1または2に記載の固体撮像素子において、第2の集光手段、および第4の集光手段の曲率は、ゼロであることを特徴とする固体撮像素子。
- 請求項1ないし3のいずれかに記載の固体撮像素子において、該固体撮像素子はさらに、第1の集光手段および第2の集光手段の前記光が照射される側の面を平坦にする平坦化手段を含むことを特徴とする固体撮像素子。
- 請求項1に記載の固体撮像素子において、第1および第2の感光部のフォトダイオードは遮光膜で覆われ、第1および第2の感光部の感光面積は、該遮光膜の該感光部における開口面積により決定されることを特徴とする固体撮像素子。
- 請求項1に記載の固体撮像素子において、第1および第2の感光部の感光面積は、該感光部のフォトダイオードの大きさにより決定されることを特徴とする固体撮像素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006062712A JP4813929B2 (ja) | 2006-03-08 | 2006-03-08 | 固体撮像素子 |
US11/714,119 US7608866B2 (en) | 2006-03-08 | 2007-03-06 | Solid-state image sensor with micro-lenses for anti-shading |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006062712A JP4813929B2 (ja) | 2006-03-08 | 2006-03-08 | 固体撮像素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007242857A JP2007242857A (ja) | 2007-09-20 |
JP4813929B2 true JP4813929B2 (ja) | 2011-11-09 |
Family
ID=38478044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006062712A Active JP4813929B2 (ja) | 2006-03-08 | 2006-03-08 | 固体撮像素子 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7608866B2 (ja) |
JP (1) | JP4813929B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20080113489A (ko) * | 2007-06-25 | 2008-12-31 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
JP5283371B2 (ja) * | 2007-11-29 | 2013-09-04 | パナソニック株式会社 | 固体撮像素子 |
JP2010093081A (ja) * | 2008-10-08 | 2010-04-22 | Panasonic Corp | 固体撮像装置およびその製造方法 |
JP2011109033A (ja) * | 2009-11-20 | 2011-06-02 | Sharp Corp | 層内レンズおよびその製造方法、カラーフィルタおよびその製造方法、固体撮像素子およびその製造方法、並びに電子情報機器 |
JP5091964B2 (ja) * | 2010-03-05 | 2012-12-05 | 株式会社東芝 | 固体撮像装置 |
JP2020005142A (ja) * | 2018-06-28 | 2020-01-09 | キヤノン株式会社 | 撮像装置及びその制御方法、プログラム、記憶媒体 |
US20220028912A1 (en) * | 2018-12-26 | 2022-01-27 | Sony Semiconductor Solutions Corporation | Imaging element and imaging apparatus |
US11217613B2 (en) * | 2019-11-18 | 2022-01-04 | Omnivision Technologies, Inc. | Image sensor with split pixel structure and method of manufacturing thereof |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2868915B2 (ja) | 1991-03-27 | 1999-03-10 | 株式会社東芝 | 固体撮像装置 |
JPH05167054A (ja) * | 1991-12-19 | 1993-07-02 | Toshiba Corp | 固体撮像装置の製造方法 |
JPH06151797A (ja) * | 1992-11-11 | 1994-05-31 | Sony Corp | 固体撮像素子 |
US6221687B1 (en) * | 1999-12-23 | 2001-04-24 | Tower Semiconductor Ltd. | Color image sensor with embedded microlens array |
JP4262446B2 (ja) * | 2002-06-21 | 2009-05-13 | 富士フイルム株式会社 | 固体撮像装置 |
JP2005116568A (ja) * | 2003-10-02 | 2005-04-28 | Sony Corp | 固体撮像素子 |
KR100648997B1 (ko) * | 2004-12-24 | 2006-11-28 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
-
2006
- 2006-03-08 JP JP2006062712A patent/JP4813929B2/ja active Active
-
2007
- 2007-03-06 US US11/714,119 patent/US7608866B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20070210345A1 (en) | 2007-09-13 |
US7608866B2 (en) | 2009-10-27 |
JP2007242857A (ja) | 2007-09-20 |
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