JP3992713B2 - Cmosイメージセンサー及びその製造方法 - Google Patents
Cmosイメージセンサー及びその製造方法 Download PDFInfo
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- JP3992713B2 JP3992713B2 JP2004376938A JP2004376938A JP3992713B2 JP 3992713 B2 JP3992713 B2 JP 3992713B2 JP 2004376938 A JP2004376938 A JP 2004376938A JP 2004376938 A JP2004376938 A JP 2004376938A JP 3992713 B2 JP3992713 B2 JP 3992713B2
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- Prior art keywords
- layer
- light
- image sensor
- microlens
- cmos image
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000010410 layer Substances 0.000 claims description 87
- 239000011229 interlayer Substances 0.000 claims description 20
- 238000005468 ion implantation Methods 0.000 claims description 14
- 238000009826 distribution Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 22
- 230000003287 optical effect Effects 0.000 description 10
- 230000000295 complement effect Effects 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
22 層間絶縁層
23 カラーフィルター層
24 平坦化層
25 マイクロレンズ
26 マスク層
Claims (2)
- CMOSイメージセンサーの製造方法であって、
半導体基板上に形成された複数の光感知素子上に層間絶縁層を形成する段階と、
各光感知素子に各カラーフィルター層が対面するように、前記層間絶縁層上に複数のカラーフィルター層を形成する段階と、
前記カラーフィルター層上に平坦化層を形成する段階と、
前記平坦化層上にレンズ形成用物質層を蒸着し、かつイオン注入及び拡散法を用いることによって、対面する光感知素子に光が集束するような屈折率分布を有しているマイクロレンズ層を形成する段階とを具備し、
矩形形状が形成されるようにパターン化されたレンズ形成用物質層の中央部分を開けているマスク層を用いてイオンが注入されることを特徴とするCMOSイメージセンサーの製造方法。 - 前記レンズ形成用物質層を矩形形状にパターン化した後、該レンズ形成用物質層が各光感知素子に対面するように、前記イオンが該レンズ形成用物質層に注入されかつ拡散されることを特徴とする請求項1に記載のCMOSイメージセンサーの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040063032A KR100672680B1 (ko) | 2004-08-11 | 2004-08-11 | 씨모스 이미지 센서 및 그의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006054413A JP2006054413A (ja) | 2006-02-23 |
JP3992713B2 true JP3992713B2 (ja) | 2007-10-17 |
Family
ID=35721599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004376938A Expired - Fee Related JP3992713B2 (ja) | 2004-08-11 | 2004-12-27 | Cmosイメージセンサー及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7223625B2 (ja) |
JP (1) | JP3992713B2 (ja) |
KR (1) | KR100672680B1 (ja) |
DE (1) | DE102004062954A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100685881B1 (ko) * | 2004-06-22 | 2007-02-23 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
KR100640972B1 (ko) * | 2004-07-15 | 2006-11-02 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그의 제조 방법 |
EP1944808A1 (fr) * | 2007-01-15 | 2008-07-16 | Stmicroelectronics Sa | Module optique imageur destiné à être associé à un composant semi-conducteur optique et procédé pour sa fabrication. |
KR100825805B1 (ko) * | 2007-02-13 | 2008-04-29 | 삼성전자주식회사 | 이미지 센서 소자 및 그 센서 소자의 제조방법 |
KR100923595B1 (ko) * | 2007-12-18 | 2009-10-23 | 주식회사 동부하이텍 | Cmos 이미지 센서 |
FR2930372B1 (fr) * | 2008-04-18 | 2011-05-27 | St Microelectronics Sa | Element et module optique imageur pour composant semi-conducteur optique, procede pour le traitement d'un element optique imageur et appareil de captation d'images |
KR101033384B1 (ko) | 2008-08-06 | 2011-05-09 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
KR101038825B1 (ko) | 2008-11-05 | 2011-06-03 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
KR101776955B1 (ko) * | 2009-02-10 | 2017-09-08 | 소니 주식회사 | 고체 촬상 장치와 그 제조 방법, 및 전자 기기 |
JP5556122B2 (ja) * | 2009-10-27 | 2014-07-23 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、電子機器 |
KR102302594B1 (ko) | 2014-09-16 | 2021-09-15 | 삼성전자주식회사 | 고 굴절지수의 마이크로 렌즈를 갖는 이미지 센서 |
US10488560B2 (en) * | 2018-02-13 | 2019-11-26 | Visera Technologies Company Limited | Optical elements |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6213067A (ja) | 1985-07-11 | 1987-01-21 | Nippon Texas Instr Kk | レンズ領域を有する固体撮像装置 |
JPH05228946A (ja) | 1992-02-21 | 1993-09-07 | Kuraray Co Ltd | 光学部品の製造法および光学部品複製用母型 |
JP2860001B2 (ja) | 1992-06-29 | 1999-02-24 | シャープ株式会社 | 単板式液晶プロジェクション用液晶表示素子 |
KR100239408B1 (ko) * | 1996-12-31 | 2000-01-15 | 김영환 | 고체 촬상 소자의 제조 방법 |
KR100359768B1 (ko) * | 1999-03-18 | 2002-11-07 | 주식회사 하이닉스반도체 | 고체 촬상 소자 및 그 제조방법 |
JP4107800B2 (ja) | 2000-11-15 | 2008-06-25 | 株式会社リコー | 平板状レンズの製造方法 |
JP4882182B2 (ja) | 2001-08-08 | 2012-02-22 | 凸版印刷株式会社 | 固体撮像素子 |
JP4000802B2 (ja) | 2001-09-14 | 2007-10-31 | セイコーエプソン株式会社 | 半透過反射表示パネル及びこれを用いた電気光学装置 |
JP4136374B2 (ja) | 2002-01-11 | 2008-08-20 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP2003222705A (ja) * | 2002-01-30 | 2003-08-08 | Toppan Printing Co Ltd | マイクロレンズの製造方法 |
-
2004
- 2004-08-11 KR KR1020040063032A patent/KR100672680B1/ko not_active IP Right Cessation
- 2004-12-27 JP JP2004376938A patent/JP3992713B2/ja not_active Expired - Fee Related
- 2004-12-28 DE DE102004062954A patent/DE102004062954A1/de not_active Withdrawn
- 2004-12-29 US US11/024,312 patent/US7223625B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20060033176A1 (en) | 2006-02-16 |
JP2006054413A (ja) | 2006-02-23 |
KR20060014481A (ko) | 2006-02-16 |
KR100672680B1 (ko) | 2007-01-22 |
DE102004062954A1 (de) | 2006-02-23 |
US7223625B2 (en) | 2007-05-29 |
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