JP4803975B2 - 半導体素子の素子分離膜形成方法 - Google Patents
半導体素子の素子分離膜形成方法 Download PDFInfo
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- JP4803975B2 JP4803975B2 JP2004191126A JP2004191126A JP4803975B2 JP 4803975 B2 JP4803975 B2 JP 4803975B2 JP 2004191126 A JP2004191126 A JP 2004191126A JP 2004191126 A JP2004191126 A JP 2004191126A JP 4803975 B2 JP4803975 B2 JP 4803975B2
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- 238000000034 method Methods 0.000 title claims description 85
- 238000002955 isolation Methods 0.000 title claims description 41
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 238000005530 etching Methods 0.000 claims description 54
- 239000007789 gas Substances 0.000 claims description 51
- 239000012535 impurity Substances 0.000 claims description 31
- 229910052731 fluorine Inorganic materials 0.000 claims description 16
- 239000011737 fluorine Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 6
- 229910001882 dioxygen Inorganic materials 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 14
- 230000008021 deposition Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04B—KNITTING
- D04B9/00—Circular knitting machines with independently-movable needles
- D04B9/42—Circular knitting machines with independently-movable needles specially adapted for producing goods of particular configuration
- D04B9/46—Circular knitting machines with independently-movable needles specially adapted for producing goods of particular configuration stockings, or portions thereof
-
- A—HUMAN NECESSITIES
- A41—WEARING APPAREL
- A41B—SHIRTS; UNDERWEAR; BABY LINEN; HANDKERCHIEFS
- A41B11/00—Hosiery; Panti-hose
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- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04B—KNITTING
- D04B15/00—Details of, or auxiliary devices incorporated in, weft knitting machines, restricted to machines of this kind
- D04B15/06—Sinkers
-
- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04B—KNITTING
- D04B15/00—Details of, or auxiliary devices incorporated in, weft knitting machines, restricted to machines of this kind
- D04B15/14—Needle cylinders
- D04B15/16—Driving devices for reciprocatory action
-
- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04B—KNITTING
- D04B15/00—Details of, or auxiliary devices incorporated in, weft knitting machines, restricted to machines of this kind
- D04B15/18—Dials
-
- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04B—KNITTING
- D04B15/00—Details of, or auxiliary devices incorporated in, weft knitting machines, restricted to machines of this kind
- D04B15/24—Sinker heads; Sinker bars
-
- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04B—KNITTING
- D04B15/00—Details of, or auxiliary devices incorporated in, weft knitting machines, restricted to machines of this kind
- D04B15/32—Cam systems or assemblies for operating knitting instruments
- D04B15/322—Cam systems or assemblies for operating knitting instruments in circular knitting machines with needle cylinder and dial
-
- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04B—KNITTING
- D04B15/00—Details of, or auxiliary devices incorporated in, weft knitting machines, restricted to machines of this kind
- D04B15/32—Cam systems or assemblies for operating knitting instruments
- D04B15/34—Cam systems or assemblies for operating knitting instruments for dials
-
- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04B—KNITTING
- D04B9/00—Circular knitting machines with independently-movable needles
- D04B9/26—Circular knitting machines with independently-movable needles for producing patterned fabrics
- D04B9/38—Circular knitting machines with independently-movable needles for producing patterned fabrics with stitch patterns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
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- Engineering & Computer Science (AREA)
- Textile Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Element Separation (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
Description
32、42、52 トンネル酸化膜
33、43、53 ポリシリコン膜
34、44、54 窒化膜
35、45、55 第1酸化膜
36、46、56 FSG膜
37、47、57 第2酸化膜
Claims (19)
- 半導体基板を所定深さにエッチングしてトレンチを形成するステップと、
酸化工程によりトレンチ内部に側壁酸化膜を形成した後、全体構造の上部に第1酸化膜を形成するステップと、
フッ素が含まれたエッチングガスを利用して前記第1酸化膜を全面エッチングし、前記第1酸化膜の上部に不純物が残留するステップと、
酸素または水素が含まれたエッチングガスを利用したエッチング工程により前記不純物を除去するステップと、
前記不純物が除去された結果物の全体構造の上部に第2酸化膜を形成した後、全面エッチング工程を行って素子分離膜を形成するステップと、
を備えることを特徴とする半導体素子の素子分離膜形成方法。 - 前記第1酸化膜の全面エッチング工程は、NF3 ガスとHeガスの混合ガスを用いて行うことを特徴とする請求項1に記載の半導体素子の素子分離膜形成方法。
- 前記NF3ガスは50ないし200sccm、前記Heガスは200ないし500sccm程度を用いることを特徴とする請求項2に記載の半導体素子の素子分離膜形成方法。
- 前記第1酸化膜の全面エッチング工程は、500ないし1000W程度のHFパワーと3000ないし4000W程度のLFパワーを印加して行うことを特徴とする請求項1に記載の半導体素子の素子分離膜形成方法。
- 前記不純物除去工程は、酸素ガスとHeガスの混合ガスを用いて行うことを特徴とする請求項1に記載の半導体素子の素子分離膜形成方法。
- 前記酸素ガスは100ないし1000sccm、前記Heガスは200ないし500sccm程度を用いることを特徴とする請求項5に記載の半導体素子の素子分離膜形成方法。
- 前記不純物除去工程は、500ないし2000WのHFパワーと1000ないし8000WのLFパワーを印加して行うことを特徴とする請求項1に記載の半導体素子の素子分離膜形成方法。
- 前記不純物除去工程は水素ガスとHeガスの混合ガスを用いて行うことを特徴とする請求項1に記載の半導体素子の素子分離膜形成方法。
- 前記水素ガスは100ないし1000sccm、前記Heガスは200ないし500sccm程度を用いることを特徴とする請求項8に記載の半導体素子の素子分離膜形成方法。
- 半導体基板上部にトンネル酸化膜、ポリシリコン膜及び窒化膜を順次形成した後、前記膜の所定領域をエッチングして半導体基板を露出させるステップと、
前記露出した半導体基板を所定の深さにエッチングしてトレンチを形成するステップと、
酸化工程によりトレンチ内部に側壁酸化膜を形成した後、全体構造の上部に第1酸化膜を形成するステップと、
フッ素が含まれたエッチングガスを利用して前記第1酸化膜を全面エッチングし、これにより前記第1酸化膜の上部に不純物が残留するステップと、
酸素または水素プラズマを用いたエッチング工程により前記不純物を除去するステップと、
前記不純物が除去された結果物の全体構造の上部に第2酸化膜を形成した後、全面エッチング工程を行って素子分離膜を形成するステップと、
を備えることを特徴とする半導体素子の素子分離膜形成方法。 - 前記第1酸化膜の全面エッチング工程は、前記第1酸化膜の上面が前記トンネル酸化膜と前記ポリシリコン膜の界面よりも上に位置するように行うことを特徴とする請求項10に記載の半導体素子の素子分離膜形成方法。
- 前記第1酸化膜の全面エッチング工程は、NF3 ガスとHeガスの混合ガスを用いて行うことを特徴とする請求項11に記載の半導体素子の素子分離膜形成方法。
- 前記NF3ガスは50ないし200sccm、前記Heガスは200ないし500sccm程度を用いることを特徴とする請求項12に記載の半導体素子の素子分離膜形成方法。
- 前記第1酸化膜の全面エッチング工程は、500ないし1000W程度のHFパワーと3000ないし4000W程度のLFパワーを印加して行うことを特徴とする請求項11に記載の半導体素子の素子分離膜形成方法。
- 前記不純物除去工程は、酸素ガスとHeガスの混合ガスを用いて行うことを特徴とする請求項11に記載の半導体素子の素子分離膜形成方法。
- 前記酸素ガスは100ないし1000sccm、前記Heガスは200ないし500sccm程度を用いることを特徴とする請求項15に記載の半導体素子の素子分離膜形成方法。
- 前記不純物除去工程は、500ないし2000WのHFパワーと1000ないし8000WのLFパワーを印加して行うことを特徴とする請求項11に記載の半導体素子の素子分離膜形成方法。
- 前記不純物除去工程は水素とHe混合ガスを用いて行うことを特徴とする請求項11に記載の半導体素子の素子分離膜形成方法。
- 前記水素ガスは100ないし1000sccm、前記Heガスは200ないし500sccm程度を用いることを特徴とする請求項18に記載の半導体素子の素子分離膜形成方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020040024186A KR100554828B1 (ko) | 2004-04-08 | 2004-04-08 | 반도체 소자의 소자 분리막 형성 방법 |
KR2004-24186 | 2004-04-08 |
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JP2005303247A JP2005303247A (ja) | 2005-10-27 |
JP4803975B2 true JP4803975B2 (ja) | 2011-10-26 |
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Country Status (4)
Country | Link |
---|---|
US (1) | US7205242B2 (ja) |
JP (1) | JP4803975B2 (ja) |
KR (1) | KR100554828B1 (ja) |
TW (1) | TWI253125B (ja) |
Families Citing this family (5)
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KR100788377B1 (ko) | 2006-09-13 | 2008-01-02 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
KR100978859B1 (ko) * | 2008-07-11 | 2010-08-31 | 피에스케이 주식회사 | 할로우 캐소드 플라즈마 발생장치 및 할로우 캐소드플라즈마를 이용한 대면적 기판 처리장치 |
KR101046335B1 (ko) * | 2008-07-29 | 2011-07-05 | 피에스케이 주식회사 | 할로우 캐소드 플라즈마 발생방법 및 할로우 캐소드플라즈마를 이용한 대면적 기판 처리방법 |
JP5599350B2 (ja) * | 2011-03-29 | 2014-10-01 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JP2017152531A (ja) | 2016-02-24 | 2017-08-31 | 東京エレクトロン株式会社 | 基板処理方法 |
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JPH06236864A (ja) * | 1969-04-23 | 1994-08-23 | Hitachi Ltd | エッチング処理方法及びエッチングの後処理方法並びにエッチング設備 |
JP3134324B2 (ja) * | 1991-02-13 | 2001-02-13 | ソニー株式会社 | 半導体装置の製造方法 |
JP3058112B2 (ja) * | 1997-02-27 | 2000-07-04 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US5968279A (en) * | 1997-06-13 | 1999-10-19 | Mattson Technology, Inc. | Method of cleaning wafer substrates |
JPH1174339A (ja) * | 1997-08-28 | 1999-03-16 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US6194283B1 (en) * | 1997-10-29 | 2001-02-27 | Advanced Micro Devices, Inc. | High density trench fill due to new spacer fill method including isotropically etching silicon nitride spacers |
JP3519589B2 (ja) * | 1997-12-24 | 2004-04-19 | 株式会社ルネサステクノロジ | 半導体集積回路の製造方法 |
JP2000332099A (ja) * | 1999-05-21 | 2000-11-30 | Matsushita Electronics Industry Corp | 半導体装置およびその製造方法 |
JP2001015616A (ja) * | 1999-06-29 | 2001-01-19 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
JP2001077189A (ja) * | 1999-09-08 | 2001-03-23 | Sony Corp | 半導体装置の製造方法 |
US6207532B1 (en) * | 1999-09-30 | 2001-03-27 | Taiwan Semiconductor Manufacturing Company | STI process for improving isolation for deep sub-micron application |
JP2002198525A (ja) * | 2000-12-27 | 2002-07-12 | Toshiba Corp | 半導体装置及びその製造方法 |
US20020162571A1 (en) * | 2001-05-02 | 2002-11-07 | Su Chun Lien | Planar clean method applicable to shallow trench isolation |
JP3477462B2 (ja) * | 2001-08-21 | 2003-12-10 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US6524930B1 (en) * | 2002-04-25 | 2003-02-25 | Texas Instruments Incorporated | Method for forming a bottom corner rounded STI |
JP2004111429A (ja) * | 2002-09-13 | 2004-04-08 | Renesas Technology Corp | 半導体装置 |
US7091104B2 (en) * | 2003-01-23 | 2006-08-15 | Silterra Malaysia Sdn. Bhd. | Shallow trench isolation |
US7081414B2 (en) * | 2003-05-23 | 2006-07-25 | Applied Materials, Inc. | Deposition-selective etch-deposition process for dielectric film gapfill |
US6921721B2 (en) * | 2003-10-24 | 2005-07-26 | Texas Instruments Incorporated | Post plasma clean process for a hardmask |
-
2004
- 2004-04-08 KR KR1020040024186A patent/KR100554828B1/ko not_active IP Right Cessation
- 2004-06-29 US US10/880,278 patent/US7205242B2/en not_active Expired - Fee Related
- 2004-06-29 JP JP2004191126A patent/JP4803975B2/ja not_active Expired - Fee Related
- 2004-06-30 TW TW093119316A patent/TWI253125B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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US7205242B2 (en) | 2007-04-17 |
TW200534405A (en) | 2005-10-16 |
KR100554828B1 (ko) | 2006-02-22 |
KR20050099097A (ko) | 2005-10-13 |
US20050227495A1 (en) | 2005-10-13 |
JP2005303247A (ja) | 2005-10-27 |
TWI253125B (en) | 2006-04-11 |
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