JP2005303247A - 半導体素子の素子分離膜形成方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 87
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000000926 separation method Methods 0.000 title abstract 3
- 238000005530 etching Methods 0.000 claims abstract description 55
- 239000012535 impurity Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000001301 oxygen Substances 0.000 claims abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- 239000007789 gas Substances 0.000 claims description 38
- 238000002955 isolation Methods 0.000 claims description 37
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 150000004767 nitrides Chemical class 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 abstract description 13
- 239000011737 fluorine Substances 0.000 abstract description 13
- 230000006866 deterioration Effects 0.000 abstract description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 12
- 230000008021 deposition Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- D04B—KNITTING
- D04B9/00—Circular knitting machines with independently-movable needles
- D04B9/42—Circular knitting machines with independently-movable needles specially adapted for producing goods of particular configuration
- D04B9/46—Circular knitting machines with independently-movable needles specially adapted for producing goods of particular configuration stockings, or portions thereof
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- A41—WEARING APPAREL
- A41B—SHIRTS; UNDERWEAR; BABY LINEN; HANDKERCHIEFS
- A41B11/00—Hosiery; Panti-hose
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- D04B15/06—Sinkers
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- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04B—KNITTING
- D04B15/00—Details of, or auxiliary devices incorporated in, weft knitting machines, restricted to machines of this kind
- D04B15/14—Needle cylinders
- D04B15/16—Driving devices for reciprocatory action
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- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04B—KNITTING
- D04B15/00—Details of, or auxiliary devices incorporated in, weft knitting machines, restricted to machines of this kind
- D04B15/18—Dials
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- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04B—KNITTING
- D04B15/00—Details of, or auxiliary devices incorporated in, weft knitting machines, restricted to machines of this kind
- D04B15/24—Sinker heads; Sinker bars
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- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04B—KNITTING
- D04B15/00—Details of, or auxiliary devices incorporated in, weft knitting machines, restricted to machines of this kind
- D04B15/32—Cam systems or assemblies for operating knitting instruments
- D04B15/322—Cam systems or assemblies for operating knitting instruments in circular knitting machines with needle cylinder and dial
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- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04B—KNITTING
- D04B15/00—Details of, or auxiliary devices incorporated in, weft knitting machines, restricted to machines of this kind
- D04B15/32—Cam systems or assemblies for operating knitting instruments
- D04B15/34—Cam systems or assemblies for operating knitting instruments for dials
-
- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04B—KNITTING
- D04B9/00—Circular knitting machines with independently-movable needles
- D04B9/26—Circular knitting machines with independently-movable needles for producing patterned fabrics
- D04B9/38—Circular knitting machines with independently-movable needles for producing patterned fabrics with stitch patterns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H10B—ELECTRONIC MEMORY DEVICES
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- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
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- Chemical Kinetics & Catalysis (AREA)
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- Inorganic Chemistry (AREA)
- Element Separation (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
Abstract
【解決手段】 半導体基板を所定の深さにエッチングしてトレンチを形成するステップと、酸化工程によりトレンチ内部に側壁酸化膜を形成した後、全体構造の上部に第1酸化膜を形成するステップと、前記第1酸化膜を全面エッチングし、前記第1酸化膜の上部に不純物が残留するステップと、エッチング工程により前記不純物を除去するステップと、全体構造の上部に第2酸化膜を形成した後、全面エッチング工程を行って素子分離膜を形成するステップとを備える。
【選択図】図4
Description
32、42、52 トンネル酸化膜
33、43、53 ポリシリコン膜
34、44、54 窒化膜
35、45、55 第1酸化膜
36、46、56 FSG膜
37、47、57 第2酸化膜
Claims (20)
- 半導体基板を所定の深さにエッチングしてトレンチを形成するステップと、
酸化工程によりトレンチ内部に側壁酸化膜を形成した後、全体構造の上部に第1酸化膜を形成するステップと、
前記第1酸化膜を全面エッチングし、前記第1酸化膜の上部に不純物が残留するステップと、
エッチング工程により前記不純物を除去するステップと、
全体構造の上部に第2酸化膜を形成した後、全面エッチング工程を行って素子分離膜を形成するステップと
を備えることを特徴とする半導体素子の素子分離膜形成方法。 - 前記第1酸化膜の全面エッチング工程は、NF3とHeの混合ガスを用いて行うことを特徴とする請求項1に記載の半導体素子の素子分離膜形成方法。
- 前記NF3ガスは50ないし200sccm、前記Heガスは200ないし500sccm程度を用いることを特徴とする請求項2に記載の半導体素子の素子分離膜形成方法。
- 前記第1酸化膜の全面エッチング工程は、500ないし1000W程度のHFパワーと3000ないし4000W程度のLFパワーを印加して行うことを特徴とする請求項1に記載の半導体素子の素子分離膜形成方法。
- 前記不純物除去工程は、酸素とHe混合ガスを用いて行うことを特徴とする請求項1に記載の半導体素子の素子分離膜形成方法。
- 前記酸素ガスは100ないし1000sccm、前記Heガスは200ないし500sccm程度を用いることを特徴とする請求項5に記載の半導体素子の素子分離膜形成方法。
- 前記不純物除去工程は、500ないし2000WのHFパワーと1000ないし8000WのLFパワーを印加して行うことを特徴とする請求項1に記載の半導体素子の素子分離膜形成方法。
- 前記不純物除去工程は水素とHe混合ガスを用いて行うことを特徴とする請求項1に記載の半導体素子の素子分離膜形成方法。
- 前記水素ガスは100ないし1000sccm、前記Heガスは200ないし500sccm程度を用いることを特徴とする請求項8に記載の半導体素子の素子分離膜形成方法。
- 前記不純物除去工程は、500ないし2000WのHFパワーと1000ないし8000WのLFパワーを印加して行うことを特徴とする請求項1に記載の半導体素子の素子分離膜形成方法。
- 半導体基板の上部にトンネル酸化膜、ポリシリコン膜及び窒化膜を順次形成した後、前記膜の所定領域をエッチングして半導体基板を露出させるステップと、
前記露出した半導体基板を所定の深さにエッチングしてトレンチを形成するステップと、
酸化工程によりトレンチ内部に側壁酸化膜を形成した後、全体構造の上部に第1酸化膜を形成するステップと、
前記第1酸化膜を全面エッチングし、これにより前記第1酸化膜の上部に不純物が残留するステップと、
酸素または水素プラズマを用いたエッチング工程により前記不純物を除去するステップと、
全体構造の上部に第2酸化膜を形成した後、全面エッチング工程を行って素子分離膜を形成するステップと
を備えることを特徴とする半導体素子の素子分離膜形成方法。 - 前記第1酸化膜の全面エッチング工程は、前記第1酸化膜の上面が前記トンネル酸化膜と前記ポリシリコン膜の界面よりも上に位置するように行うことを特徴とする請求項11に記載の半導体素子の素子分離膜形成方法。
- 前記第1酸化膜の全面エッチング工程は、NF3とHeの混合ガスを用いて行うことを特徴とする請求項12に記載の半導体素子の素子分離膜形成方法。
- 前記NF3ガスは50ないし200sccm、前記Heガスは200ないし500sccm程度を用いることを特徴とする請求項12に記載の半導体素子の素子分離膜形成方法。
- 前記第1酸化膜の全面エッチング工程は、500ないし1000W程度のHFパワーと3000ないし4000W程度のLFパワーを印加して行うことを特徴とする請求項12に記載の半導体素子の素子分離膜形成方法。
- 前記不純物除去工程は、酸素とHe混合ガスを用いて行うことを特徴とする請求項12に記載の半導体素子の素子分離膜形成方法。
- 前記酸素ガスは100ないし1000sccm、前記Heガスは200ないし500sccm程度を用いることを特徴とする請求項16に記載の半導体素子の素子分離膜形成方法。
- 前記不純物除去工程は、500ないし2000WのHFパワーと1000ないし8000WのLFパワーを印加して行うことを特徴とする請求項12に記載の半導体素子の素子分離膜形成方法。
- 前記不純物除去工程は水素とHe混合ガスを用いて行うことを特徴とする請求項12に記載の半導体素子の素子分離膜形成方法。
- 前記水素ガスは100ないし1000sccm、前記Heガスは200ないし500sccm程度を用いることを特徴とする請求項19に記載の半導体素子の素子分離膜形成方法。
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KR1020040024186A KR100554828B1 (ko) | 2004-04-08 | 2004-04-08 | 반도체 소자의 소자 분리막 형성 방법 |
KR2004-24186 | 2004-04-08 |
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JP2005303247A true JP2005303247A (ja) | 2005-10-27 |
JP4803975B2 JP4803975B2 (ja) | 2011-10-26 |
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US (1) | US7205242B2 (ja) |
JP (1) | JP4803975B2 (ja) |
KR (1) | KR100554828B1 (ja) |
TW (1) | TWI253125B (ja) |
Cited By (1)
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US10256107B2 (en) | 2016-02-24 | 2019-04-09 | Tokyo Electron Limited | Substrate processing method |
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KR100788377B1 (ko) | 2006-09-13 | 2008-01-02 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
KR100978859B1 (ko) * | 2008-07-11 | 2010-08-31 | 피에스케이 주식회사 | 할로우 캐소드 플라즈마 발생장치 및 할로우 캐소드플라즈마를 이용한 대면적 기판 처리장치 |
KR101046335B1 (ko) * | 2008-07-29 | 2011-07-05 | 피에스케이 주식회사 | 할로우 캐소드 플라즈마 발생방법 및 할로우 캐소드플라즈마를 이용한 대면적 기판 처리방법 |
JP5599350B2 (ja) * | 2011-03-29 | 2014-10-01 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
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JPH10242259A (ja) * | 1997-02-27 | 1998-09-11 | Nec Corp | 半導体装置およびその製造方法 |
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JP2004111429A (ja) * | 2002-09-13 | 2004-04-08 | Renesas Technology Corp | 半導体装置 |
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JPH1174339A (ja) * | 1997-08-28 | 1999-03-16 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
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-
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- 2004-04-08 KR KR1020040024186A patent/KR100554828B1/ko not_active IP Right Cessation
- 2004-06-29 JP JP2004191126A patent/JP4803975B2/ja not_active Expired - Fee Related
- 2004-06-29 US US10/880,278 patent/US7205242B2/en not_active Expired - Fee Related
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US10256107B2 (en) | 2016-02-24 | 2019-04-09 | Tokyo Electron Limited | Substrate processing method |
Also Published As
Publication number | Publication date |
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JP4803975B2 (ja) | 2011-10-26 |
KR100554828B1 (ko) | 2006-02-22 |
US7205242B2 (en) | 2007-04-17 |
KR20050099097A (ko) | 2005-10-13 |
TW200534405A (en) | 2005-10-16 |
US20050227495A1 (en) | 2005-10-13 |
TWI253125B (en) | 2006-04-11 |
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