JP4785039B2 - シリコンウェーハのライフタイム測定方法 - Google Patents
シリコンウェーハのライフタイム測定方法 Download PDFInfo
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- JP4785039B2 JP4785039B2 JP2005231973A JP2005231973A JP4785039B2 JP 4785039 B2 JP4785039 B2 JP 4785039B2 JP 2005231973 A JP2005231973 A JP 2005231973A JP 2005231973 A JP2005231973 A JP 2005231973A JP 4785039 B2 JP4785039 B2 JP 4785039B2
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- 229910052710 silicon Inorganic materials 0.000 title claims description 41
- 239000010703 silicon Substances 0.000 title claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 40
- 238000000691 measurement method Methods 0.000 title description 2
- 235000012431 wafers Nutrition 0.000 claims description 71
- 238000005259 measurement Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 31
- 230000006798 recombination Effects 0.000 claims description 21
- 238000005215 recombination Methods 0.000 claims description 21
- 238000006388 chemical passivation reaction Methods 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 4
- 239000002801 charged material Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 13
- 239000010408 film Substances 0.000 description 13
- 238000002161 passivation Methods 0.000 description 12
- 239000000523 sample Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 10
- 239000000969 carrier Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
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- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 230000001443 photoexcitation Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000011573 trace mineral Substances 0.000 description 2
- 235000013619 trace mineral Nutrition 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013068 control sample Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- DHEIAYDROZXXGS-UHFFFAOYSA-N ethanol;iodine Chemical compound [I].CCO DHEIAYDROZXXGS-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Images
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
更に、フッ化水素蒸気雰囲気中に半導体ウェーハを置いたケミカルパシベーションが提案されている。(例えば特許文献2参照)
しかしながら、上記方法は煩雑で特殊な装置を必要とする欠点がある。
2 測定ステージ
3 導波管
5 サーキュレータ
6 ガンダイオード
7 マイクロ波検出器
8 レーザダイオード
9 解析部
Claims (3)
- シリコンウェーハのライフタイムをマイクロ波光導電減衰法により測定する方法において、表面再結合を抑制するためにケミカルパシベーション処理をし、帯電材質によって測定ウェーハの保管環境を囲むことによりシリコンウェーハ表面に帯電した電荷を一定状態に維持することを特徴とするシリコンウェーハのライフタイム測定方法。
- シリコンウェーハのライフタイムをマイクロ波光導電減衰法により測定する方法において、表面再結合を抑制するためにケミカルパシベーション処理をし、シリコンウェーハと同じ帯電状態としたダミーウェーハを上下または左右に載置した搬送キャリアで保管することによって、シリコンウェーハ表面に帯電した電荷を一定状態に維持することを特徴とするシリコンウェーハのライフタイム測定方法。
- 前記ケミカルパシベーション処理として、シリコンウェーハがHF溶液に浸漬処理されることによって、水素終端することを特徴とする請求項1又は2記載のシリコンウェーハのライフタイム測定方法。
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JP2005231973A JP4785039B2 (ja) | 2005-08-10 | 2005-08-10 | シリコンウェーハのライフタイム測定方法 |
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JP2005231973A JP4785039B2 (ja) | 2005-08-10 | 2005-08-10 | シリコンウェーハのライフタイム測定方法 |
Publications (2)
Publication Number | Publication Date |
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JP2007048959A JP2007048959A (ja) | 2007-02-22 |
JP4785039B2 true JP4785039B2 (ja) | 2011-10-05 |
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JP2005231973A Active JP4785039B2 (ja) | 2005-08-10 | 2005-08-10 | シリコンウェーハのライフタイム測定方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010103400A (ja) * | 2008-10-27 | 2010-05-06 | Covalent Materials Corp | シリコンウェーハのキャリアライフタイム測定方法 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5504634B2 (ja) * | 2009-01-27 | 2014-05-28 | 信越半導体株式会社 | ライフタイムの評価方法 |
JP5099024B2 (ja) * | 2009-01-27 | 2012-12-12 | 信越半導体株式会社 | エピタキシャルウエーハの製造方法及び半導体装置の製造方法 |
JP5455393B2 (ja) * | 2009-02-20 | 2014-03-26 | Sumco Techxiv株式会社 | 半導体ウエハの再結合ライフタイム測定方法 |
JP5477697B2 (ja) * | 2009-08-31 | 2014-04-23 | 株式会社Sumco | シリコンウェーハの表面または表層評価方法 |
JP5350345B2 (ja) | 2010-09-22 | 2013-11-27 | 株式会社神戸製鋼所 | 薄膜半導体の結晶性評価装置および方法 |
RU2484551C1 (ru) * | 2012-01-31 | 2013-06-10 | Закрытое Акционерное Общество "ТЕЛЕКОМ-СТВ" | Способ измерения времени жизни неосновных носителей заряда в кремнии |
RU2486629C1 (ru) * | 2012-01-31 | 2013-06-27 | Закрытое Акционерное Общество "ТЕЛЕКОМ-СТВ" | Способ контроля времени жизни неосновных носителей заряда в слитках кремния |
JP5882801B2 (ja) | 2012-03-16 | 2016-03-09 | 株式会社神戸製鋼所 | 半導体結晶性評価装置および該方法 |
JP6219559B2 (ja) * | 2012-09-07 | 2017-10-25 | 株式会社神戸製鋼所 | 半導体キャリア寿命測定装置および該方法 |
JP6080101B2 (ja) * | 2013-02-15 | 2017-02-15 | 信越半導体株式会社 | シリコン基板の再結合ライフタイム測定方法 |
JP6421711B2 (ja) * | 2015-07-03 | 2018-11-14 | 信越半導体株式会社 | 再結合ライフタイム測定の前処理方法 |
KR20180013276A (ko) * | 2016-07-29 | 2018-02-07 | 에스케이실트론 주식회사 | 반도체 기판의 전처리 조건의 평가 방법 및 라이프 타임 측정 방법 |
KR20180091246A (ko) | 2017-02-06 | 2018-08-16 | 에스케이실트론 주식회사 | 웨이퍼 제조 방법 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3670051B2 (ja) * | 1995-06-06 | 2005-07-13 | 株式会社神戸製鋼所 | 半導体試料のキャリアのライフタイム測定方法及びその装置 |
JPH10270516A (ja) * | 1997-03-26 | 1998-10-09 | Sumitomo Metal Ind Ltd | 半導体ウエハの評価方法及びその装置 |
HU227170B1 (en) * | 2000-02-17 | 2010-09-28 | Semilab Felvezetoe Fiz Lab Rt | Surface passivation method and arrangement for measuring life time of minority carrier of semiconductors |
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- 2005-08-10 JP JP2005231973A patent/JP4785039B2/ja active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010103400A (ja) * | 2008-10-27 | 2010-05-06 | Covalent Materials Corp | シリコンウェーハのキャリアライフタイム測定方法 |
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