JP4749785B2 - ガス処理装置 - Google Patents
ガス処理装置 Download PDFInfo
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- JP4749785B2 JP4749785B2 JP2005208760A JP2005208760A JP4749785B2 JP 4749785 B2 JP4749785 B2 JP 4749785B2 JP 2005208760 A JP2005208760 A JP 2005208760A JP 2005208760 A JP2005208760 A JP 2005208760A JP 4749785 B2 JP4749785 B2 JP 4749785B2
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- 238000012545 processing Methods 0.000 title claims description 86
- 230000002093 peripheral effect Effects 0.000 claims description 47
- 238000012546 transfer Methods 0.000 claims description 24
- 230000017525 heat dissipation Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 23
- 238000009792 diffusion process Methods 0.000 claims description 22
- 239000003507 refrigerant Substances 0.000 claims description 18
- 229910052735 hafnium Inorganic materials 0.000 claims description 16
- 238000001816 cooling Methods 0.000 claims description 15
- 238000007599 discharging Methods 0.000 claims description 15
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 239000002826 coolant Substances 0.000 claims description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 175
- 239000010408 film Substances 0.000 description 77
- 235000012431 wafers Nutrition 0.000 description 36
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 18
- 238000000034 method Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 10
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 9
- 238000000354 decomposition reaction Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 239000002994 raw material Substances 0.000 description 7
- 238000005979 thermal decomposition reaction Methods 0.000 description 7
- 239000000047 product Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 4
- 238000011068 loading method Methods 0.000 description 4
- 230000008016 vaporization Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052914 metal silicate Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910004129 HfSiO Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- FIPWRIJSWJWJAI-UHFFFAOYSA-N Butyl carbitol 6-propylpiperonyl ether Chemical compound C1=C(CCC)C(COCCOCCOCCCC)=CC2=C1OCO2 FIPWRIJSWJWJAI-UHFFFAOYSA-N 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- -1 hafnium alkoxide Chemical class 0.000 description 1
- HRDRRWUDXWRQTB-UHFFFAOYSA-N hafnium(4+);propan-2-olate Chemical compound [Hf+4].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-] HRDRRWUDXWRQTB-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 150000002978 peroxides Chemical group 0.000 description 1
- 229960005235 piperonyl butoxide Drugs 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31645—Deposition of Hafnium oxides, e.g. HfO2
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Description
そして、成膜温度に加熱されたウエハW上でHTB、TEOSおよびO2ガスの反応が生じ、ウエハW上にハフニウムシリケート(HfSiOx)膜が成膜される。
2…載置台
4…シャワーヘッド(ガス吐出機構)
40…ガス導入プレート(ガス導入部)
41…ガス吐出プレート(ガス吐出部)
42a…第1のガス導入孔
42b…第2のガス導入孔
43…ガス拡散プレート(ガス拡散部)
44a…第1のガス拡散空間
44b…第2のガス拡散空間
45a…第1のガス吐出孔
45b…第2のガス吐出孔
46…中央部
47…外周部
48…カバー部材
50…放熱部材
51…環状冷媒流路
52…給水管
53…排水管
54…熱電対
55…ヒーター
56…温度コントローラ
57…冷媒源出力ユニット
58…ヒーター電源出力ユニット
59…伝熱調整部材
60…熱電半導体素子
W…ウエハ(被処理基板)
Claims (13)
- 被処理基板を収容する処理容器と、
前記処理容器内に配置され、被処理基板が載置される載置台と、
前記載置台上と対向する位置に設けられ、前記処理容器内へ処理ガスを吐出するガス吐出機構と、
前記処理容器内を排気する排気機構と
を具備するガス処理装置であって、
前記ガス吐出機構は、
前記処理ガスを吐出するための多数のガス吐出孔が形成された中央部と、
前記中央部の外周側に位置する、前記ガス吐出孔の存在しない外周部と
を有し、
前記ガス吐出機構の熱を前記外周部の略全周から大気側に放熱する放熱機構をさらに具備し、
前記放熱機構は、前記外周部に略全周にわたって環状に、かつ大気に接するように設けられ、前記ガス吐出機構の熱を伝熱して大気側に放熱する放熱部材と、
前記外周部と前記放熱部材との熱伝達を調整する環状の伝熱調整部材とを有し、
前記放熱部材は、前記伝熱調整部材を介して前記外周部に略全周にわたって接するように設けられていることを特徴とするガス処理装置。 - 被処理基板を収容する処理容器と、
前記処理容器内に配置され、被処理基板が載置される載置台と、
前記載置台上と対向する位置に設けられ、前記処理容器内へ処理ガスを吐出するガス吐出機構と、
前記処理容器内を排気する排気機構と、
を具備するガス処理装置であって、
前記ガス吐出機構は、
前記処理ガスを導入するためのガス導入孔が形成されたガス導入部と、
前記載置台に向けて前記処理ガスを吐出するための多数のガス吐出孔が形成されたガス吐出部と、
前記ガス導入部と前記ガス吐出部との間に設けられた、前記処理ガスを拡散させるガス拡散部と
を有し、
前記ガス吐出部は、
前記処理ガスを吐出するための多数のガス吐出孔が形成された中央部と、
前記中央部の外周側に位置する、前記ガス吐出孔の存在しない外周部と
を有し、
前記ガス吐出機構の熱を前記外周部の略全周から大気側に放熱する放熱機構をさらに具備し、
前記放熱機構は、前記外周部に略全周にわたって環状に、かつ大気に接するように設けられ、前記ガス吐出機構の熱を伝熱して大気側に放熱する放熱部材と、
前記外周部と前記放熱部材との熱伝達を調整する環状の伝熱調整部材とを有し、
前記放熱部材は、前記伝熱調整部材を介して前記外周部に略全周にわたって接するように設けられていることを特徴とするガス処理装置。 - 前記放熱機構は、前記放熱部材に設けられ、前記外周部から前記ガス吐出機構を冷却する冷却機構を有していることを特徴とする請求項1または請求項2に記載のガス処理装置。
- 前記冷却機構は、冷却媒体が流通する環状の冷媒流路を有していることを特徴とする請求項3に記載のガス処理装置。
- 前記冷却機構は熱電半導体素子を有していることを特徴とする請求項3または請求項4に記載のガス処理装置。
- 前記放熱機構は、加熱して前記ガス吐出機構の温度を調整する加熱機構をさらに有することを特徴とする請求項3から請求項5のいずれか1項に記載のガス処理装置。
- 被処理基板を収容する処理容器と、
前記処理容器内に配置され、被処理基板が載置される載置台と、
前記載置台上と対向する位置に設けられ、前記処理容器内へ処理ガスを吐出するガス吐出機構と、
前記処理容器内を排気する排気機構と、
を具備するガス処理装置であって、
前記ガス吐出機構は、
前記処理ガスを導入するためのガス導入孔が形成されたガス導入部と、
前記載置台に向けて前記処理ガスを吐出するための多数のガス吐出孔が形成されたガス吐出部と、
前記ガス導入部と前記ガス吐出部との間に設けられた、前記処理ガスを拡散させるガス拡散部と
を有し、
前記ガス吐出部は、
前記処理ガスを吐出するための多数のガス吐出孔が形成された中央部と、
前記中央部の外周側に位置する、前記ガス吐出孔の存在しない外周部と
を有し、
前記外周部は、環状をなし、その上側に略全周にわたって放熱面が形成されており、
前記放熱面に対応するように前記外周部の略全周に沿って環状に、かつ大気に接するように設けられ、前記ガス吐出機構の熱を伝熱して大気側に放熱する放熱部材と、
前記放熱面と前記放熱部材との間に、全周にわたってこれらに接触するように設けられ、これらの接触面積を調整することにより、前記外周部からの前記放熱部材への熱伝達を調整する伝熱調整部材と、
前記放熱部材に設けられ、この放熱部材を介して前記ガス吐出機構を冷却する冷却機構と、
前記放熱部材に設けられ、この放熱部材を加熱して前記ガス吐出機構の温度を調整する加熱機構と
を具備することを特徴とするガス処理装置。 - 前記冷却機構は、冷却媒体が流通する環状の冷媒流路を有していることを特徴とする請求項7に記載のガス処理装置。
- 前記冷却機構は、熱電半導体素子を有していることを特徴とする請求項7または請求項8に記載のガス処理装置。
- 前記中央部の前記載置台上と対向する面には、前記ガス吐出孔を有するカバー部材が着脱可能に設けられていることを特徴とする請求項1から請求項9のいずれか1項に記載のガス処理装置。
- 前記カバー部材の表面にはアルマイト加工が施されていることを特徴とする請求項10に記載のガス処理装置。
- MOCVD装置であることを特徴とする請求項1から請求項11のいずれか1項に記載のガス処理装置。
- 前記処理ガスはハフニウム系原料を含んで構成されていることを特徴とする請求項1から請求項12のいずれか1項に記載のガス処理装置。
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US11/996,077 US20090250008A1 (en) | 2005-07-19 | 2006-07-18 | Gas treatment apparatus |
KR1020087001392A KR101031741B1 (ko) | 2005-07-19 | 2006-07-18 | 가스 처리 장치 |
PCT/JP2006/314147 WO2007010887A1 (ja) | 2005-07-19 | 2006-07-18 | ガス処理装置 |
CNB2006800263640A CN100557777C (zh) | 2005-07-19 | 2006-07-18 | 气体处理装置 |
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JP (1) | JP4749785B2 (ja) |
KR (1) | KR101031741B1 (ja) |
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US11859286B2 (en) | 2020-03-09 | 2024-01-02 | Kioxia Corporation | Semiconductor manufacturing apparatus and manufacturing method of semiconductor device |
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KR100949913B1 (ko) * | 2007-11-28 | 2010-03-30 | 주식회사 케이씨텍 | 원자층 증착 장치 |
KR101004927B1 (ko) * | 2008-04-24 | 2010-12-29 | 삼성엘이디 주식회사 | Cvd용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치 |
WO2010087385A1 (ja) * | 2009-01-29 | 2010-08-05 | 東京エレクトロン株式会社 | 成膜装置およびガス吐出部材 |
KR20120043636A (ko) * | 2010-10-26 | 2012-05-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 플라즈마 처리 장치 및 플라즈마 cvd 장치 |
WO2012077590A1 (ja) * | 2010-12-09 | 2012-06-14 | 株式会社アルバック | 有機薄膜形成装置 |
CN102953050B (zh) * | 2011-08-26 | 2014-06-18 | 杭州士兰明芯科技有限公司 | 大直径mocvd反应器的喷淋头 |
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CN104813440A (zh) * | 2012-09-26 | 2015-07-29 | 应用材料公司 | 于基板处理***中控制温度 |
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JP6054470B2 (ja) | 2015-05-26 | 2016-12-27 | 株式会社日本製鋼所 | 原子層成長装置 |
CN107667418B (zh) * | 2015-06-05 | 2022-03-01 | 应用材料公司 | 用于降低基板温度非均匀性的改良式装置 |
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US11859286B2 (en) | 2020-03-09 | 2024-01-02 | Kioxia Corporation | Semiconductor manufacturing apparatus and manufacturing method of semiconductor device |
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