JP4740599B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4740599B2 JP4740599B2 JP2005002972A JP2005002972A JP4740599B2 JP 4740599 B2 JP4740599 B2 JP 4740599B2 JP 2005002972 A JP2005002972 A JP 2005002972A JP 2005002972 A JP2005002972 A JP 2005002972A JP 4740599 B2 JP4740599 B2 JP 4740599B2
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- 239000004065 semiconductor Substances 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 118
- 229920005591 polysilicon Polymers 0.000 claims description 118
- 239000007789 gas Substances 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 62
- 238000005530 etching Methods 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 50
- 238000001312 dry etching Methods 0.000 claims description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- 238000002955 isolation Methods 0.000 claims description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052717 sulfur Inorganic materials 0.000 claims description 7
- 239000011593 sulfur Substances 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 description 104
- 238000001020 plasma etching Methods 0.000 description 12
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 11
- 229910001882 dioxygen Inorganic materials 0.000 description 11
- 238000000059 patterning Methods 0.000 description 7
- 239000006227 byproduct Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000001788 irregular Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- -1 alkyl compound Chemical class 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910018999 CoSi2 Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
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- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
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Description
前記ドライエッチング工程は、第1の温度で実行される第1の段階と、第2の温度で実行される第2の段階とを含み、前記ドライエッチング工程の前記第2の段階は、前記エッチングガスに、酸素と硫黄を含む堆積性のガスを添加することにより実行され、前記第2の温度は前記第1の温度よりも低いことを特徴とする半導体装置の製造方法を提供する。
図6(A)〜(C)は、本発明の第1実施例によるポリシリコンゲート電極パターンの形成方法を示す。
[第2実施例]
図8(A)〜図9(G)は、本発明の第2実施例によるCMOS素子の製造方法を示す図である。
[第3実施例]
本発明のドライエッチング方法は、ポリシリコン膜をパターニングしてゲート電極を形成する場合のみならず、単結晶シリコンよりなるシリコン基板中にSTI型の素子分離構造を形成するのにも有効である。
シリコン面をドライエッチングする工程を含む半導体装置の製造方法であって、
前記ドライエッチング工程は、HBr,HCl,Cl2,Br2,HIよりなる群から選ばれる少なくとも一のガス種を含むエッチングガスにより実行され、
前記ドライエッチング工程は、第1の温度で実行される第1の段階と、第2の温度で実行される第2の段階とを含むことを特徴とする半導体装置の製造方法。
前記第2の温度は前記第1の温度よりも低いことを特徴とする付記1記載の半導体装置の製造方法。
前記第1の温度は40℃以上であり、前記第2の温度は40℃以下であることを特徴とする付記1または2記載の半導体装置の製造方法。
前記ドライエッチング工程の前記第2の段階は、前記エッチングガスに、酸素と硫黄を含む堆積性のガスを添加することにより実行される付記1〜3のうち、いずれか一項記載の半導体装置の製造方法。
前記堆積性のガスはSO2であることを特徴とする付記4記載の半導体装置の製造方法。
前記ドライエッチング工程の前記第2の段階は、前記エッチングガスに、酸素ガスと硫化カルボニルガスまたは硫化水素ガスを添加することにより実行されることを特徴とする付記1〜3のうち、いずれか一項記載の半導体装置の製造方法。
前記ドライエッチング工程の前記第2の段階は、前記エッチングガスに、酸素ガスとアルキル化合物ガスを添加することにより実行されることを特徴とする付記1〜3のうち、いずれか一項記載の半導体装置の製造方法。
前記第1および第2の段階は、同一の処理容器中において連続して実行されることを特徴とする付記1〜7のうち、いずれか一項記載の半導体装置の製造方法。
前記シリコン面は、単結晶シリコン面、ポリシリコン面およびアモルファスシリコン面のいずれかであることを特徴とする付記1〜8のうち、いずれか一項記載の半導体装置の製造方法。
前記ドライエッチング工程は、ゲート絶縁膜上にポリシリコンゲート電極を形成する工程であり、
前記第1の段階は、前記ゲート絶縁膜を構成する絶縁膜上のポリシリコン膜を、前記ゲート絶縁膜が露出するまでドライエッチングして、前記ポリシリコンゲート電極に対応したポリシリコンパターンを形成する工程よりなり、
前記第2の段階は、前記ポリシリコンパターンをオーバーエッチングする工程よりなることを特徴とする付記1〜8のうち、いずれか一項記載の半導体装置の製造方法。
前記ポリシリコンゲート電極はn型ポリシリコンよりなることを特徴とする付記10記載の半導体装置の製造方法。
前記ドライエッチング工程は、ゲート絶縁膜上のn型ポリシリコンゲート電極とp型ポリシリコンゲート電極とを同時に形成する工程とを含み、前記第1の段階は、前記ゲート絶縁膜を構成する絶縁膜上のn型ポリシリコン膜を前記ゲート絶縁膜が露出するまでドライエッチングして、前記n型ポリシリコンゲート電極に対応した第1のポリシリコンパターンを形成し、同時に前記絶縁膜上のp型ポリシリコン膜を前記ゲート絶縁膜が露出するまでドライエッチングして前記p型ポリシリコンゲート電極に対応した第2のポリシリコンパターンを形成する工程とを含み、前記第2の段階は、前記第1および第2のポリシリコンパターンをオーバーエッチングする工程を含むことを特徴とする付記1〜8のうち、いずれか一項記載の半導体装置の製造方法。
前記ドライエッチング工程は、シリコン基板中の素子分離溝を形成する工程であり、
前記第1の段階は、前記シリコン基板中に前記素子分離溝に対応した溝を形成する工程よりなり、
前記第2の段階は、前記溝の底部に角度の浅いテーパ部を形成する工程よりなることを特徴とする付記1〜8のうち、いずれか一項記載の半導体装置の製造方法。
前記溝は、前記シリコン基板表面に形成されたn型ウェル中に形成されることを特徴とする付記13記載の半導体装置の製造方法。
前記溝は、前記シリコン基板表面に形成されたn型ウェルおよびp型ウェル中に、同時に形成されることを特徴とする付記13記載の半導体装置の製造方法。
シリコン面のドライエッチング方法であって、
第1の温度で実行される第1の工程と、
第2の温度で実行される第2の工程とよりなり、
前記第1および第2の工程は、HBr,HCl,Cl2,Br2,HIよりなる群から選ばれる少なくとも一のガス種を含むエッチングガスにより実行され、
前記第2の工程では、さらに酸素あるいは硫黄、あるいはその両方を含む堆積性のガスが添加されることを特徴とするドライエッチング方法。
12,22,44 ゲート絶縁膜
13,23,45 ポリシリコン膜
13G,23G ポリシリコンゲート電極
23X ポリシリコンパターニング残渣
24,47 ハードマスク膜
24A ハードマスクパターン
25 BARC膜
42 p型ウェル
43 n型ウェル
45A n型ポリシリコンゲート電極
45B p型ポリシリコンゲート電極
46A,46B,R1,R2 レジストマスク
48 側壁絶縁膜
49 シリサイド膜
61 n型ソース/ドレインエクステンション領域
62 p型ソース/ドレインエクステンション領域
63 n型ソース/ドレイン領域
64 p型ソース/ドレイン領域
81A 素子分離溝
81a 熱酸化膜
82 犠牲酸化膜
83 SiN膜
83A 開口部
84 CVD酸化膜
Claims (5)
- シリコン結晶面をドライエッチングする工程を含む半導体装置の製造方法であって、
前記ドライエッチング工程は、HBr,HCl,Cl2,Br2,HIよりなる群から選ばれる少なくとも一のガス種を含むエッチングガスにより実行され、
前記ドライエッチング工程は、第1の温度で実行される第1の段階と、第2の温度で実行される第2の段階とを含み、
前記ドライエッチング工程の前記第2の段階は、前記エッチングガスに、酸素と硫黄を含む堆積性のガスを添加することにより実行され、
前記第2の温度は前記第1の温度よりも低いことを特徴とする半導体装置の製造方法。 - 前記ドライエッチング工程は、ゲート絶縁膜上にポリシリコンゲート電極を形成する工程であり、
前記第1の段階は、前記ゲート絶縁膜を構成する絶縁膜上のポリシリコン膜を、前記ゲート絶縁膜が露出するまでドライエッチングして、前記ポリシリコンゲート電極に対応したポリシリコンパターンを形成する工程よりなり、
前記第2の段階は、前記ポリシリコンパターンをオーバーエッチングする工程よりなることを特徴とする請求項1記載の半導体装置の製造方法。 - 前記ドライエッチング工程は、ゲート絶縁膜上のn型ポリシリコンゲート電極とp型ポリシリコンゲート電極とを同時に形成する工程とを含み、前記第1の段階は、前記ゲート絶縁膜を構成する絶縁膜上のn型ポリシリコン膜を前記ゲート絶縁膜が露出するまでドライエッチングして、前記n型ポリシリコンゲート電極に対応した第1のポリシリコンパターンを形成し、同時に前記絶縁膜上のp型ポリシリコン膜を前記ゲート絶縁膜が露出するまでドライエッチングして前記p型ポリシリコンゲート電極に対応した第2のポリシリコンパターンを形成する工程とを含み、前記第2の段階は、前記第1および第2のポリシリコンパターンをオーバーエッチングする工程を含むことを特徴とする請求項1または2記載の半導体装置の製造方法。
- 前記ドライエッチング工程は、シリコン基板中の素子分離溝を形成する工程であり、
前記第1の段階は、前記シリコン基板中に前記素子分離溝に対応した溝を形成する工程よりなり、
前記第2の段階は、前記溝の底部に角度の浅いテーパ部を形成する工程よりなることを特徴とする請求項1記載の半導体装置の製造方法。 - シリコン結晶面のドライエッチングを含む半導体装置の製造方法であって、
第1の温度で実行される第1の工程と、
第2の温度で実行される第2の工程とよりなり、
前記第1および第2の工程は、HBr,HCl,Cl2,Br2,HIよりなる群から選ばれる少なくとも一のガス種を含むエッチングガスにより実行され、
前記第2の工程では、さらに硫黄を含む堆積性のガスが添加され、
前記第2の温度は前記第1の温度よりも低いことを特徴とする半導体装置の製造方法。
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