JP4727993B2 - 強誘電性単結晶膜構造物の製造方法 - Google Patents
強誘電性単結晶膜構造物の製造方法 Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims description 69
- 238000000034 method Methods 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000010410 layer Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000012790 adhesive layer Substances 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 229920001187 thermosetting polymer Polymers 0.000 claims 1
- 239000010408 film Substances 0.000 description 36
- 239000000463 material Substances 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 238000002844 melting Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000008710 crystal-8 Substances 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000010944 silver (metal) Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical compound [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
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Description
N. Setter, Piezoelectric Materials in Devices, Ceramics Laboratory, EPEL 2002
〔式中、
(A)は、Pb(Mg1/3Nb2/3)O3又はPb(Zn1/3Nb2/3)O3、
(B)は、PbTiO3、
(C)は、LiTaO3、
(P)は、Pt、Au、Ag、Pd及びRhからなる群から選ばれる金属、
(N)は、Ni、Co、Fe、Sr、Sc、Ru、Cu及びCdからなる群から選ばれる金属の酸化物、
xは、0.65〜0.98範囲の数、
yは、0.01〜0.34範囲の数、
zは、0.01〜0.1範囲の数であり、そして
p及びnは、各々独立して0.01〜5範囲の数である。〕
前記式(I)の物質は均質な単結晶であり、韓国特許公開第2001−96505号に開示されているように固相反応させた後、溶融結晶化させることによって製造できる。具体的には、前記式(I)の物質は(a)Pb(Mg1/3Nb2/3)O3及びPb(Zn1/3Nb2/3)O3のいずれか一成分をPbTiO3およびLiTaO3と各々0.65〜0.98、0.01〜0.34および0.01〜0.1範囲の相対モル量で混合し、(b)前記段階(a)で得られた混合物にPt、Au、Ag、PdおよびRhからなる群から選ばれる金属およびNi、Co、Fe、Sr、Sc、Ru、CuおよびCdからなる群から選ばれる金属の酸化物を該混合物の総量を基準として各々0.01〜5重量%の量で加え、(c)前記段階(b)で得られた混合物を焼成した後、焼成体を粉砕し、(d)前記段階(c)で得られた粉末を溶融した後、(e)溶融物を冷却して結晶化することによって製造できる。前記工程によって製造された単結晶は、好ましくは5cm以上の直径を有する。
Claims (6)
- 強誘電性単結晶膜構造物の製造方法であって、
強誘電性単結晶板およびシリコン基板を別々に用意する工程、
二酸化ケイ素層を前記シリコン基板上に形成する工程、
前記二酸化ケイ素層上に熱硬化性導電性接着剤層を塗布する工程、
前記接着剤層上に前記単結晶板を積層する工程、
熱処理により前記接着剤層を硬化し、下部電極層を形成すると共に、前記シリコン基板と前記単結晶板を接合する工程、
前記単結晶板を研磨して強誘電性単結晶膜を形成する工程、
上部電極層を前記単結晶膜上に形成する工程、
前記単結晶膜を分極化して分極化強誘電性単結晶膜を得る工程、および
前記基板、前記上部および下部電極層、並びに前記分極化強誘電性単結晶膜を望ましいパターンにエッチングする工程、
を含む方法。 - 前記単結晶板を前記基板と接合する前及び後に1〜100μmの厚さに研磨することを特徴とする請求項1記載の方法。
- 前記接着剤層は室温〜150℃範囲の温度で1〜24時間熱処理により硬化されることを特徴とする請求項1記載の方法。
- 前記強誘電性単結晶膜は、1,000以上の誘電常数を有することを特徴とする請求項1記載の方法。
- さらに前記接着剤層と向かい合う前記単結晶板の表面上にスパッタリング又は電子ビーム蒸着法によって導電性金属層を形成することを含むことを特徴とする請求項1記載の方法。
- 前記強誘電性単結晶板は下記式(I)の組成を有することを特徴とする請求項1記載の方法。
x(A)y(B)z(C)−p(P)n(N) (I)
〔式中、
(A)は、Pb(Mg 1/3 Nb 2/3 )O 3 又はPb(Zn 1/3 Nb 2/3 )O 3 、
(B)は、PbTiO 3 、
(C)は、LiTaO 3 、
(P)は、Pt、Au、Ag、Pd及びRhからなる群から選ばれる金属、
(N)は、Ni、Co、Fe、Sr、Sc、Ru、Cu及びCdからなる群から選ばれる金属の酸化物、
xは、0.65〜0.98範囲の数、
yは、0.01〜0.34範囲の数、
zは、0.01〜0.1範囲の数であり、そして
p及びnは、各々独立して0.01〜5範囲の数である。〕
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JP5257397B2 (ja) * | 2010-03-31 | 2013-08-07 | ブラザー工業株式会社 | 光走査装置の製造方法 |
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CN103346253B (zh) * | 2013-06-08 | 2015-01-21 | 西安交通大学 | 铁电单晶/环氧2-2结构及应力板加固的2-2结构复合材料 |
CN111423231A (zh) * | 2020-03-31 | 2020-07-17 | 上海师范大学 | 一种三元系弛豫铁电薄膜材料及其制备方法和应用 |
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JP2006510222A (ja) | 2006-03-23 |
CN100350562C (zh) | 2007-11-21 |
KR100570586B1 (ko) | 2006-04-13 |
HK1082321A1 (en) | 2006-06-02 |
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