JP4722576B2 - 半導体実装用ボンディングワイヤの製造方法 - Google Patents
半導体実装用ボンディングワイヤの製造方法 Download PDFInfo
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- JP4722576B2 JP4722576B2 JP2005175351A JP2005175351A JP4722576B2 JP 4722576 B2 JP4722576 B2 JP 4722576B2 JP 2005175351 A JP2005175351 A JP 2005175351A JP 2005175351 A JP2005175351 A JP 2005175351A JP 4722576 B2 JP4722576 B2 JP 4722576B2
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- wire
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- concentration
- bonding wire
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- Wire Bonding (AREA)
Description
(1)金属材料を成型加工して半導体実装用ボンディングワイヤを製造する方法であって、酸化の速さの異なる2種類以上の元素からなる金属材料を酸素を含む気体中で一定時間加熱し、その後形成した表面酸化物を機械的又は化学的に除去して、酸化の速さが速い成分の濃度を表面から深さ方向に相対的に高くすることを特徴とする半導体実装用ボンディングワイヤの製造方法。
(2) 前記加熱の前に、金属材料を成型加工する(1)記載の半導体実装用ボンディングワイヤの製造方法。
(3) 前記加熱と前記酸化物の除去の間に金属材料を成型加工する(1)に記載の半導体実装用ボンディングワイヤの製造方法。
(4) 前記工程に引き続き、金属材料を成型加工する(1)に記載の半導体実装用ボンディングワイヤの製造方法。
(5) 前記成型加工が、圧延加工、引抜加工、又は押出加工の少なくとも1種である(2)〜(4)の何れかに記載の半導体実装用ボンディングワイヤの製造方法。
(6) 前記金属材料が、金、パラジウム、白金、ロジウム、銀、銅から選ばれる単体もしくは2種類以上の元素から成る固溶体を主体とし、該単体又は固溶体の元素以外の1種以上の元素を溶質元素として含有させる(1)〜(4)の何れかに記載の半導体実装用ボンディングワイヤの製造方法。
(7) 前記主体となる金属が金であり、前記溶質元素が、カルシウム、希土類金属(イットリウムとスカンジウムを含むランタノイド系金属)、ベリリウム、アルミニウム、ホウ素、ケイ素、ゲルマニウム、インジウム、銀、銅、マンガン、鉄、チタン、パラジウム、白金、ロジウムの中から選ばれる少なくとも1種である(6)記載の半導体実装用ボンディングワイヤの製造方法。
場合、主体とする金属の融点の80%以上の温度が効率的であるが、表面近傍のみ濃度遷移領域を設けたい場合はこの限りではない。
99.99mass%のボンディングワイヤ用金素材について、本発明を適用した。純度99.9999mass%の金に、カルシウム、イットリウム、ベリリウム、アルミウムを添加して、表1の組成を有する直径5mm、長さ100mmのインゴットAを鋳造した。
99mass%のボンディングワイヤ用金素材について本発明を適用した。純度99.9999mass%の金に、カルシウム、セリウム、ランタン、白金、パラジウム、銅を添加して、表9の組成を有する直径20mm、長さ200mmのインゴットCを鋳造した。
99.99mass%のボンディングワイヤ用金素材について本発明を適用した。純度99.9999mass%の金に、カルシウム、ネオジウム、ベリリウム、プラセオジウムを添加して、表16の組成を有する直径20mm、長さ200mmのインゴットEを鋳造した。その後、溝圧延とドローベンチによる引抜加工によって、直径12mmに減面加工を施した。
99mass%のボンディングワイヤ用金素材について本発明を適用した。純度99.9999mass%の金に、カルシウム、パラジウムを添加して、表24の組成を有する直径20mm、長さ200mmのインゴットGを鋳造した。その後、溝圧延とドローベンチによる引抜加工によって、直径12mmに減面加工を施した。
99mass%のボンディングワイヤ用銅素材について本発明を適用した。純度99.999mass%の銅に、カルシウムを添加して、表32の組成を有する直径20mm、長さ200mmのインゴットIを鋳造した。その後、溝圧延とドローベンチによる引抜加工によって、直径12mmに減面加工を施した。
Claims (7)
- 金属材料を成型加工して半導体実装用ボンディングワイヤを製造する方法であって、酸化の速さの異なる2種類以上の元素からなる金属材料を酸素を含む気体中で一定時間加熱し、その後形成した表面酸化物を機械的又は化学的に除去して、酸化の速さが速い成分の濃度を表面から深さ方向に相対的に高くすることを特徴とする半導体実装用ボンディングワイヤの製造方法。
- 前記加熱の前に、金属材料を成型加工する請求項1に記載の半導体実装用ボンディングワイヤの製造方法。
- 前記加熱と前記酸化物の除去の間に金属材料を成型加工する請求項1に記載の半導体実装用ボンディングワイヤの製造方法。
- 前記工程に引き続き、金属材料を成型加工する請求項1に記載の半導体実装用ボンディングワイヤの製造方法。
- 前記成型加工が、圧延加工、引抜加工又は押出加工の少なくとも1種である請求項2〜4の何れかに記載の半導体実装用ボンディングワイヤの製造方法。
- 前記金属材料が、金、パラジウム、白金、ロジウム、銀、銅から選ばれる単体もしくは2種類以上の元素から成る固溶体を主体とし、該単体又は固溶体以外の1種以上の元素を溶質元素として含有させる請求項1〜4の何れかに記載の半導体実装用ボンディングワイヤの製造方法。
- 前記主体となる金属が金であり、前記溶質元素が、カルシウム、希土類金属(イットリウムとスカンジウムを含むランタノイド系金属)、ベリリウム、アルミニウム、ホウ素、ケイ素、ゲルマニウム、インジウム、銀、銅、マンガン、鉄、チタン、パラジウム、白金、ロジウムの中から選ばれる少なくとも1種である請求項6に記載の半導体実装用ボンディングワイヤの製造方法。
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CN108292612A (zh) * | 2016-04-28 | 2018-07-17 | 日铁住金新材料股份有限公司 | 半导体装置用接合线 |
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JP5166738B2 (ja) * | 2006-03-24 | 2013-03-21 | 新日鉄住金マテリアルズ株式会社 | 半導体素子接続用金線 |
JP2009062588A (ja) * | 2007-09-07 | 2009-03-26 | Tanaka Electronics Ind Co Ltd | 伸線用インゴットの成分濃度傾斜化方法 |
CN101802994B (zh) | 2008-01-25 | 2012-02-08 | 新日铁高新材料株式会社 | 半导体装置用接合线 |
DE102009031168A1 (de) | 2009-06-29 | 2010-12-30 | W.C. Heraeus Gmbh | Festigkeitserhöhung von Iridium, Rhodium und ihren Legierungen |
CN101834165B (zh) * | 2010-05-07 | 2016-03-02 | 北京中庆微数字设备开发有限公司 | 一种集成电路芯片封装体 |
JP5775015B2 (ja) * | 2012-03-09 | 2015-09-09 | タツタ電線株式会社 | Agボンディングワイヤおよびその製造方法 |
JP5669335B1 (ja) * | 2014-09-26 | 2015-02-12 | 田中電子工業株式会社 | 銀金合金ボンディングワイヤ |
US11342299B2 (en) | 2016-04-28 | 2022-05-24 | Nippon Micrometal Corporation | Bonding wire for semiconductor devices |
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