JP5775015B2 - Agボンディングワイヤおよびその製造方法 - Google Patents
Agボンディングワイヤおよびその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000005491 wire drawing Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000005266 casting Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- 239000000155 melt Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- 150000001247 metal acetylides Chemical class 0.000 claims description 3
- 239000010931 gold Substances 0.000 description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 239000012298 atmosphere Substances 0.000 description 9
- 229910001873 dinitrogen Inorganic materials 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
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- 229910052751 metal Inorganic materials 0.000 description 4
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- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 230000000052 comparative effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
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- 238000002845 discoloration Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
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- 239000002994 raw material Substances 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
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- 229910052791 calcium Inorganic materials 0.000 description 1
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- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000009661 fatigue test Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
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- 238000009864 tensile test Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H01L2224/43985—Methods of manufacturing wire connectors involving a specific sequence of method steps
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2924/01006—Carbon [C]
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- H01L2924/01047—Silver [Ag]
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- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
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- Led Device Packages (AREA)
Description
しかし、Auボンディングワイヤは重量の99%から99.99%がAuであるため非常に高価であり、コスト面からボンディングワイヤ用の材料として安価な材料に替えたいという強い要請が成されていた。
また、ICやLSIパッケージではパッケージの熱膨張率をシリコンチップに近い値まで下げるために無機微小シリコーンフィラーの充填が行われているが、LEDパッケージでは光透過性が重要であるため、熱膨張率の調製に無機微小シリコーンフィラーを充填することは難しく、そのため、LEDパッケージはICに比べて熱膨張変化が大きく、封止されているボンディングワイヤは大きな熱ストレスを受けやすく、従ってボンディングワイヤに使用する金属材料には繰り返し応力による疲労耐性が要求されるが、Agボンディングワイヤにおいては、この疲労耐性向上と光反射率とのトレードオフが実用化に際しての難しい大きな理由である。
そこで、LED市場ではLEDパッケージとしての明るさがより得られるAgボンディングワイヤの光反射率の向上が強く求められている。
その溶解鋳造は、介在物除去に適する下抜きの真空溶解連続鋳造炉を用いて、純度99.999%以上のカーボン製ルツボを使用し、酸化を防止するために雰囲気を真空度1×10−4Pa以下にした高周波溶解法にて行い、発生するガス成分の除去のために、溶湯温度を1100℃以上、溶湯での保持時間を10分以上の条件で行い、十分に脱ガスした後に、窒素ガスなどの不活性ガスを注入して大気圧に戻して鋳造すると良い。
その表面研削の方法としては、化学研摩法やブラスト処理もあるが、伸線加工機を用いて線材表面をダイヤモンドや超鋼合金の内周刃によってそぎ落とす皮剥ダイス加工が簡易で好ましい。
以上のような介在物の除去作業や表面の酸化防止策により、0.1μm以上の介在物は除去され、その線肌は全面が金属面となって、LEDパッケージ組立後には安定した光度を得ることができる。
以下、本発明に係るAgボンディングワイヤについて実施例を用いて詳細に説明する。
表1で「皮剥加工あり」と記された試料は、溶解鋳造された8mm径のインゴットを4回に分けて皮剥ダイスを用いて表面切削してから伸線加工を行った。
放電条件は窒素ガス流量を0.5リットル/分とし、直径50μmのボールが得られるように放電電流を調整し、潰しボールの直径が75μmで厚みが10μmとなるようにLED素子上の金電極面にボールボンディングを行った。
また、アルミニウム電極との接合信頼性については、シリコンチップ上のAl−0.5質量%Cu電極面に同様にボールボンディングを行った。
ボール形状については顕微鏡にて球形か鏃形か、さらにボール底部への尖りの発生有無を観察し、球形で尖りの無い場合を○、鏃形もしくは尖りが発生した場合には×と判断した。
その評価は、従来LED用ワイヤで広く使用されているAu線のプル強度9.2gfよりも10%以上高い場合を良(○印)、10%未満で高い場合を可(△印)、Au線のプル強度9.2grfより低い場合を不良(×印)と判断した。
シア強度もDage社製の「Dage−SERIES−5000」を用いて測定し、従来LED用ワイヤで広く使用されているAu線のシア強度48.8gfよりも10%以上高い場合を良(○印)、10%未満で高い場合を可(△印)、Au線のシア強度48.8grfより低い場合を不良(×印)と判断した。
具体的には試料ワイヤを引張り、試料の破断強度の95%の張力となったところで一旦元に戻すという繰り返し引張試験を行い、破断までの平均引張回数を測定するもので、従来LED用ワイヤで広く使用されているAu線の破断までの平均引張回数155回よりも低い場合を不良(×印)、155回以上200回未満を可(△印)、200回以上300回未満を良(○印)、300回以上を優(◎印)と評価した。
従来のAu線を使用したパッケージの光度を100%としたとき、100%以上102%未満で明るい場合を可(△印)、102%以上103%未満で明るい場合を良(○印)、103%以上で明るい場合を優(◎印)と評価した。
以上の測定結果を纏めて表2に示す。
皮剥加工を行った実施例の試料番号1から10のワイヤを光学顕微鏡で観察したところ、非常に金属光沢があり、任意の5箇所の表面をそれぞれ5mm長にわたって走査電子顕微鏡で観察したところ、0.1μm以上の大きさの介在物は観察されなかった。
一方、皮剥加工を行わなかった実施例の試料番号11から19のワイヤでは、同様の走査電子顕微鏡による観察で0.1μm以上の介在物が5箇所すべてで観察された。
また、皮剥加工を行った比較例の試料番号25から28のワイヤについては、走査電子顕微鏡による観察では0.1μm以上の介在物は観察されなかったものの、ECIテクノロジ社製「酸化膜測定装置 QC−200」を用いた連続電気化学還元法による酸化膜測定の結果、厚み数ナノメートル以下の酸化膜が観察された。
実施例の試料番号1から19、及び比較例の試料番号20から24、29、30では酸化膜は観察されなかった。(これらの評価も合わせて表2に示す。)
Claims (5)
- Auを1.0質量%以上、3.0質量%以下、Pdを0.05質量%以上、1.0質量%以下、Beを1質量ppm以上、8質量ppm以下、Caを1質量ppm以上、20質量ppm以下含有し、残部がAg及び不可避不純物からなることを特徴とするLEDパッケージ用Agボンディングワイヤ。
- Auを1.0質量%以上、3.0質量%以下、Pdを0.05質量%以上、1.0質量%以下、Beを1質量ppm以上、8質量ppm以下、Caを1質量ppm以上、20質量ppm以下含有し、さらにCe、Laのいずれか又は両者を合計で1質量ppm以上、20質量ppm以下含有し、残部がAg及び不可避不純物からなることを特徴とするLEDパッケージ用Agボンディングワイヤ。
- 請求項1又は2記載のLEDパッケージ用Agボンディングワイヤにおける前記ボンディングワイヤ表面に、酸化物または炭化物などの表面介在物が存在していないことを特徴とするLEDパッケージ用Agボンディングワイヤ。
- 請求項3に記載のLEDパッケージ用Agボンディングワイヤの製造方法であって、
溶解鋳造工程で得られたインゴットを、伸線工程に供する前に、皮剥ダイス加工による表面研削を行い、前記インゴットの表面介在物を除去することを特徴とするLEDパッケージ用Agボンディングワイヤの製造方法。 - 溶解鋳造工程により所定の径に形成されたインゴットに、複数回の皮剥ダイス加工を施し、次いで伸線加工と、材料の軟化を目的とした熱処理を繰り返し少なくとも1回施して、最終線径に加工した後、伸び率を調整する仕上げ熱処理を施すことを特徴とする請求項4記載のLEDパッケージ用Agボンディングワイヤの製造方法。
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