JP4675803B2 - 平坦化装置 - Google Patents
平坦化装置 Download PDFInfo
- Publication number
- JP4675803B2 JP4675803B2 JP2006065960A JP2006065960A JP4675803B2 JP 4675803 B2 JP4675803 B2 JP 4675803B2 JP 2006065960 A JP2006065960 A JP 2006065960A JP 2006065960 A JP2006065960 A JP 2006065960A JP 4675803 B2 JP4675803 B2 JP 4675803B2
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- Prior art keywords
- contact body
- coating film
- wafer
- flattening
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000000576 coating method Methods 0.000 claims description 109
- 239000011248 coating agent Substances 0.000 claims description 106
- 239000007788 liquid Substances 0.000 claims description 89
- 238000012545 processing Methods 0.000 claims description 71
- 238000004140 cleaning Methods 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 42
- 239000002904 solvent Substances 0.000 claims description 29
- 238000001514 detection method Methods 0.000 claims description 18
- 238000003754 machining Methods 0.000 claims description 15
- 238000003825 pressing Methods 0.000 claims description 12
- 239000012530 fluid Substances 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 130
- 238000000034 method Methods 0.000 description 35
- 239000007921 spray Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 8
- 239000002002 slurry Substances 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009739 binding Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/005—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents using brushes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Coating Apparatus (AREA)
Description
4 加熱炉
18 平坦化装置
71 スピンチャック
81 第1のアーム
101 ブラシ
110 加工液供給ノズル
A 塗布絶縁膜
B 下地パターン
W ウェハ
Claims (12)
- 基板上に塗布された塗布膜を硬化する前に平坦化する平坦化装置であって,
基板上の塗布膜の表面に接触させる接触体と,
前記接触体を塗布膜の表面に押し当て,当該接触体を塗布膜の表面に沿って移動させて,塗布膜の表面を平坦化する接触体駆動機構と,
前記接触体が塗布膜を平坦化する際に基板に供給される加工液を供給する加工液供給部と,を有し,
前記加工液は,塗布膜の溶剤であることを特徴とする,平坦化装置。 - 前記加工液供給部は,前記接触体に形成されていることを特徴とする,請求項1に記載の平坦化装置。
- 前記加工液供給部として,基板の中心部に加工液を供給するノズルと,基板の中心部と外縁部の間に加工液を供給するノズルを有することを特徴とする,請求項1に記載の平坦化装置。
- 基板上に塗布された塗布膜を硬化する前に平坦化する平坦化装置であって,
基板上の塗布膜の表面に接触させる接触体と,
前記接触体を塗布膜の表面に押し当て,当該接触体を塗布膜の表面に沿って移動させて,塗布膜の表面を平坦化する接触体駆動機構と,
前記塗布膜が接触体により平坦化された後に基板に洗浄液を供給する洗浄液供給部とを有し,
前記洗浄液は,前記塗布膜の溶剤であることを特徴とする,平坦化装置。 - 前記洗浄液供給部として,洗浄液を噴霧するノズル,超音波振動を付加した洗浄液を噴出するノズル,又は基板に接触した状態で,当該接触部分に洗浄液を供給する洗浄体の少なくともいずれかを有することを特徴とする,請求項4に記載の平坦化装置。
- 前記基板を保持して回転させる回転保持部材を有し,
前記接触体は,前記回転保持部材に保持され回転された基板に押し当てられることを特徴とする,請求項1〜5のいずれかに記載の平坦化装置。 - 前記塗布膜の膜厚を検出する膜厚センサと,
前記膜厚センサによる膜厚の検出結果に基づいて,前記接触体の押し当て圧力を制御して,塗布膜を所定の膜厚に平坦化する制御部と,をさらに有することを特徴とする,請求項1〜6のいずれかに記載の平坦化装置。 - 前記接触体駆動機構は,前記接触体を支持して移動させる支持部材を有し,
前記膜厚センサは,前記支持部材に取り付けられていることを特徴とする,請求項7に記載の平坦化装置。 - 基板の歪みを検出する歪み検出センサと,
前記歪み検出センサによる歪みの検出結果に基づいて,前記接触体の基板に対する高さを制御して,塗布膜を所定の膜厚に平坦化する制御部と,をさらに有することを特徴とする,請求項1〜6のいずれかに記載の平坦化装置。 - 前記接触体駆動機構は,前記接触体を支持して移動させる支持部材を有し,
前記歪み検出センサは,前記支持部材に取り付けられていることを特徴とする,請求項9に記載の平坦化装置。 - 前記接触体は,回転可能に構成されていることを特徴とする,請求項1〜10のいずれかに記載の平坦化装置。
- 前記接触体は,スポンジ状に構成されていることを特徴とする,請求項1〜11のいずれかに記載の平坦化装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006065960A JP4675803B2 (ja) | 2006-03-10 | 2006-03-10 | 平坦化装置 |
US11/680,237 US7416474B2 (en) | 2006-03-10 | 2007-02-28 | Planarization apparatus |
KR1020070023248A KR101291406B1 (ko) | 2006-03-10 | 2007-03-09 | 평탄화 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006065960A JP4675803B2 (ja) | 2006-03-10 | 2006-03-10 | 平坦化装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007243030A JP2007243030A (ja) | 2007-09-20 |
JP4675803B2 true JP4675803B2 (ja) | 2011-04-27 |
Family
ID=38534093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006065960A Expired - Fee Related JP4675803B2 (ja) | 2006-03-10 | 2006-03-10 | 平坦化装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7416474B2 (ja) |
JP (1) | JP4675803B2 (ja) |
KR (1) | KR101291406B1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017165068A1 (en) * | 2016-03-25 | 2017-09-28 | Applied Materials, Inc. | Local area polishing system and polishing pad assemblies for a polishing system |
WO2017165046A1 (en) * | 2016-03-25 | 2017-09-28 | Applied Materials, Inc. | Polishing system with local area rate control and oscillation mode |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7729978B2 (en) | 2007-03-28 | 2010-06-01 | Trading Technologies International, Inc. | System and method for dynamically changing an electronic trade order quantity |
JP5103356B2 (ja) * | 2008-10-31 | 2012-12-19 | 東京エレクトロン株式会社 | 基板洗浄ブラシ及び基板処理装置並びに基板洗浄方法 |
KR101000298B1 (ko) | 2008-11-18 | 2010-12-13 | 세메스 주식회사 | 평판 디스플레이 소자 제조용 기판 처리 장치 |
EP2270838B1 (en) * | 2009-07-02 | 2019-06-12 | IMEC vzw | Method and apparatus for controlling optimal operation of acoustic cleaning |
JP2012028697A (ja) * | 2010-07-27 | 2012-02-09 | Toshiba Corp | 洗浄装置、方法 |
KR20160011201A (ko) * | 2013-06-18 | 2016-01-29 | 애플 인크. | 적층 시스템을 위한 압력-감지 롤러 |
JP6281161B2 (ja) * | 2013-09-27 | 2018-02-21 | 東京エレクトロン株式会社 | 液処理装置 |
US10504753B2 (en) * | 2013-12-13 | 2019-12-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Brush cleaning apparatus, chemical-mechanical polishing (CMP) system and wafer processing method |
WO2016125408A1 (ja) * | 2015-02-05 | 2016-08-11 | 東京エレクトロン株式会社 | 研磨装置、塗布膜形成装置、塗布膜形成方法、記憶媒体、パターン形成方法及びパターン形成装置 |
JP6468147B2 (ja) * | 2015-02-05 | 2019-02-13 | 東京エレクトロン株式会社 | 研磨装置、塗布膜形成装置、塗布膜形成方法及び記憶媒体 |
CN107221491B (zh) * | 2016-03-22 | 2021-10-22 | 东京毅力科创株式会社 | 基板清洗装置 |
US10147636B2 (en) * | 2016-06-27 | 2018-12-04 | Vanguard International Semiconductor Corporation | Methods for fabricating trench isolation structure |
CN106694429A (zh) * | 2016-12-23 | 2017-05-24 | 无锡市湖昌机械制造有限公司 | 精准定位清洗的清洗喷枪机构 |
US11747742B2 (en) * | 2017-04-11 | 2023-09-05 | Visera Technologies Company Limited | Apparatus and method for removing photoresist layer from alignment mark |
JP6823541B2 (ja) | 2017-05-30 | 2021-02-03 | 株式会社荏原製作所 | キャリブレーション方法およびキャリブレーションプログラム |
CN108971086B (zh) * | 2018-07-20 | 2021-05-04 | 杭州派祺空气净化科技有限公司 | 一种电子科技产品配件用清洗装置 |
CN116056979A (zh) * | 2020-07-09 | 2023-05-02 | 康宁公司 | 基板设备和方法 |
CN111715869A (zh) * | 2020-07-15 | 2020-09-29 | 四川欧亚高强铝业有限公司 | 一种铝合金铸锭表面清理设备 |
CN112337887A (zh) * | 2020-09-04 | 2021-02-09 | 国网山东省电力公司潍坊供电公司 | 基于超声波与高压脉冲水柱的绝缘子清洗装置及使用方法 |
CN112731099A (zh) * | 2020-12-17 | 2021-04-30 | 余万理 | 一种集成电路板生产用检测设备及其生产工艺 |
Citations (4)
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JPH0982616A (ja) * | 1995-09-19 | 1997-03-28 | Sony Corp | 絶縁膜の平坦化方法 |
JPH10154701A (ja) * | 1996-09-24 | 1998-06-09 | Tokyo Electron Ltd | 枚葉回転処理方法及びその装置 |
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JP2000173948A (ja) * | 1998-12-02 | 2000-06-23 | Ulvac Japan Ltd | 塗布膜形成方法および塗布膜形成装置 |
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JP2004106084A (ja) | 2002-09-17 | 2004-04-08 | Ebara Corp | ポリッシング装置及び基板処理装置 |
US20040242121A1 (en) * | 2003-05-16 | 2004-12-02 | Kazuto Hirokawa | Substrate polishing apparatus |
US7033252B2 (en) * | 2004-03-05 | 2006-04-25 | Strasbaugh | Wafer carrier with pressurized membrane and retaining ring actuator |
US7764377B2 (en) * | 2005-08-22 | 2010-07-27 | Applied Materials, Inc. | Spectrum based endpointing for chemical mechanical polishing |
-
2006
- 2006-03-10 JP JP2006065960A patent/JP4675803B2/ja not_active Expired - Fee Related
-
2007
- 2007-02-28 US US11/680,237 patent/US7416474B2/en not_active Expired - Fee Related
- 2007-03-09 KR KR1020070023248A patent/KR101291406B1/ko active IP Right Grant
Patent Citations (4)
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JPH0982616A (ja) * | 1995-09-19 | 1997-03-28 | Sony Corp | 絶縁膜の平坦化方法 |
JPH10154701A (ja) * | 1996-09-24 | 1998-06-09 | Tokyo Electron Ltd | 枚葉回転処理方法及びその装置 |
JP2000005679A (ja) * | 1998-06-24 | 2000-01-11 | Shibaura Mechatronics Corp | 塗布装置および電子部品実装装置 |
JP2000173948A (ja) * | 1998-12-02 | 2000-06-23 | Ulvac Japan Ltd | 塗布膜形成方法および塗布膜形成装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017165068A1 (en) * | 2016-03-25 | 2017-09-28 | Applied Materials, Inc. | Local area polishing system and polishing pad assemblies for a polishing system |
WO2017165046A1 (en) * | 2016-03-25 | 2017-09-28 | Applied Materials, Inc. | Polishing system with local area rate control and oscillation mode |
US10434623B2 (en) | 2016-03-25 | 2019-10-08 | Applied Materials, Inc. | Local area polishing system and polishing pad assemblies for a polishing system |
US10610994B2 (en) | 2016-03-25 | 2020-04-07 | Applied Materials, Inc. | Polishing system with local area rate control and oscillation mode |
TWI723144B (zh) * | 2016-03-25 | 2021-04-01 | 美商應用材料股份有限公司 | 局部區域研磨系統及用於研磨系統的研磨墊組件 |
Also Published As
Publication number | Publication date |
---|---|
KR101291406B1 (ko) | 2013-07-30 |
KR20070092653A (ko) | 2007-09-13 |
US20070224918A1 (en) | 2007-09-27 |
JP2007243030A (ja) | 2007-09-20 |
US7416474B2 (en) | 2008-08-26 |
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