JP4669737B2 - フォトレジスト除去用シンナー組成物及びそれを用いた半導体装置又は液晶表示装置の製造方法 - Google Patents

フォトレジスト除去用シンナー組成物及びそれを用いた半導体装置又は液晶表示装置の製造方法 Download PDF

Info

Publication number: JP4669737B2
Authority: JP; Japan
Prior art keywords: photoresist; thinner composition; ether acetate; liquid crystal; crystal display
Prior art date: 2004-05-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP2005146572A

Other languages

English (en)

Japanese (ja)

Other versions

JP2005338825A (ja

Inventor

ユーン，スクイル

パク，ヘジン

ジョン，ジョンヒュン

キム，ビョンウク

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Dongjin Semichem Co Ltd

Original Assignee

Dongjin Semichem Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2004-05-25

Filing date

2005-05-19

Publication date

2011-04-13

2005-05-19 Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd

2005-12-08 Publication of JP2005338825A publication Critical patent/JP2005338825A/ja

2011-04-13 Application granted granted Critical

2011-04-13 Publication of JP4669737B2 publication Critical patent/JP4669737B2/ja

Status Expired - Fee Related legal-status Critical Current

2025-05-19 Anticipated expiration legal-status Critical

Links

229920002120 photoresistant polymer Polymers 0.000 title claims description 56
239000000203 mixture Substances 0.000 title claims description 40
238000000034 method Methods 0.000 title claims description 26
238000004519 manufacturing process Methods 0.000 title claims description 20
239000004065 semiconductor Substances 0.000 title claims description 20
239000004973 liquid crystal related substance Substances 0.000 title claims description 16
LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 18
-1 alkyl ethanoate Chemical compound 0.000 claims description 13
QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 10
125000002947 alkylene group Chemical group 0.000 claims description 10
150000001346 alkyl aryl ethers Chemical class 0.000 claims description 9
WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 9
LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 5
FUWDFGKRNIDKAE-UHFFFAOYSA-N 1-butoxypropan-2-yl acetate Chemical compound CCCCOCC(C)OC(C)=O FUWDFGKRNIDKAE-UHFFFAOYSA-N 0.000 claims description 2
LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 claims description 2
DMFAHCVITRDZQB-UHFFFAOYSA-N 1-propoxypropan-2-yl acetate Chemical compound CCCOCC(C)OC(C)=O DMFAHCVITRDZQB-UHFFFAOYSA-N 0.000 claims description 2
150000001875 compounds Chemical class 0.000 claims 1
239000000758 substrate Substances 0.000 description 15
235000012431 wafers Nutrition 0.000 description 14
DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 9
XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
238000005530 etching Methods 0.000 description 5
239000011521 glass Substances 0.000 description 5
231100000111 LD50 Toxicity 0.000 description 4
FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 4
230000000052 comparative effect Effects 0.000 description 4
LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
230000002093 peripheral effect Effects 0.000 description 4
238000000206 photolithography Methods 0.000 description 4
ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
125000000217 alkyl group Chemical group 0.000 description 3
125000004432 carbon atom Chemical group C* 0.000 description 3
238000004090 dissolution Methods 0.000 description 3
230000000694 effects Effects 0.000 description 3
JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 2
SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 2
238000004140 cleaning Methods 0.000 description 2
JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
235000019439 ethyl acetate Nutrition 0.000 description 2
229940116333 ethyl lactate Drugs 0.000 description 2
JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropyl acetate Chemical compound CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 description 2
230000000704 physical effect Effects 0.000 description 2
YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 2
239000011347 resin Substances 0.000 description 2
229920005989 resin Polymers 0.000 description 2
239000002904 solvent Substances 0.000 description 2
239000007921 spray Substances 0.000 description 2
238000005507 spraying Methods 0.000 description 2
231100000820 toxicity test Toxicity 0.000 description 2
ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
206010053759 Growth retardation Diseases 0.000 description 1
NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
241000699666 Mus <mouse, genus> Species 0.000 description 1
241000699670 Mus sp. Species 0.000 description 1
OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
206010074268 Reproductive toxicity Diseases 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
238000009835 boiling Methods 0.000 description 1
239000003990 capacitor Substances 0.000 description 1
238000010227 cup method (microbiological evaluation) Methods 0.000 description 1
230000007547 defect Effects 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
150000002170 ethers Chemical class 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
230000006870 function Effects 0.000 description 1
231100000001 growth retardation Toxicity 0.000 description 1
230000003394 haemopoietic effect Effects 0.000 description 1
FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
230000007062 hydrolysis Effects 0.000 description 1
238000006460 hydrolysis reaction Methods 0.000 description 1
238000005468 ion implantation Methods 0.000 description 1
150000002576 ketones Chemical class 0.000 description 1
210000003734 kidney Anatomy 0.000 description 1
150000003903 lactic acid esters Chemical class 0.000 description 1
201000002364 leukopenia Diseases 0.000 description 1
231100001022 leukopenia Toxicity 0.000 description 1
210000004185 liver Anatomy 0.000 description 1
230000015654 memory Effects 0.000 description 1
230000008558 metabolic pathway by substance Effects 0.000 description 1
125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
210000000056 organ Anatomy 0.000 description 1
239000003960 organic solvent Substances 0.000 description 1
230000035515 penetration Effects 0.000 description 1
238000007540 photo-reduction reaction Methods 0.000 description 1
229920000642 polymer Polymers 0.000 description 1
239000000047 product Substances 0.000 description 1
230000001850 reproductive effect Effects 0.000 description 1
230000007696 reproductive toxicity Effects 0.000 description 1
231100000372 reproductive toxicity Toxicity 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
238000004528 spin coating Methods 0.000 description 1
239000013589 supplement Substances 0.000 description 1
229910021642 ultra pure water Inorganic materials 0.000 description 1
239000012498 ultrapure water Substances 0.000 description 1

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Life Sciences & Earth Sciences (AREA)
Engineering & Computer Science (AREA)
Chemical Kinetics & Catalysis (AREA)
Oil, Petroleum & Natural Gas (AREA)
Wood Science & Technology (AREA)
Inorganic Chemistry (AREA)
Photosensitive Polymer And Photoresist Processing (AREA)
Cleaning Or Drying Semiconductors (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

JP2005146572A 2004-05-25 2005-05-19 フォトレジスト除去用シンナー組成物及びそれを用いた半導体装置又は液晶表示装置の製造方法 Expired - Fee Related JP4669737B2 (ja)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1020040037385A KR101142868B1 (ko)	2004-05-25	2004-05-25	포토레지스트 제거용 씬너 조성물

Publications (2)

Publication Number	Publication Date
JP2005338825A JP2005338825A (ja)	2005-12-08
JP4669737B2 true JP4669737B2 (ja)	2011-04-13

Family

ID=35492409

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2005146572A Expired - Fee Related JP4669737B2 (ja)	2004-05-25	2005-05-19	フォトレジスト除去用シンナー組成物及びそれを用いた半導体装置又は液晶表示装置の製造方法

Country Status (4)

Country	Link
JP (1)	JP4669737B2 (zh)
KR (1)	KR101142868B1 (zh)
CN (1)	CN1702560B (zh)
TW (1)	TWI405051B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW200641560A (en) *	2005-02-09	2006-12-01	Showa Denko Kk	Photosensitive composition removing liquid
US8021490B2 (en)	2007-01-04	2011-09-20	Eastman Chemical Company	Substrate cleaning processes through the use of solvents and systems
WO2014104192A1 (ja) *	2012-12-27	2014-07-03	富士フイルム株式会社	レジスト除去液およびレジスト剥離方法
KR102445582B1 (ko) *	2016-02-11	2022-09-22	주식회사 이엔에프테크놀로지	컬러레지스트 제거용 신너 조성물
CN106773562A (zh) *	2016-12-23	2017-05-31	昆山艾森半导体材料有限公司	一种去除az光刻胶的去胶液
CN114375378B (zh)	2019-09-24	2024-02-09	大金工业株式会社	熔敷体

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH07128867A (ja) *	1993-06-28	1995-05-19	Tokyo Ohka Kogyo Co Ltd	レジスト洗浄除去用溶剤及びそれを使用する電子部品製造用基材の製造方法
WO2003058350A1 (en) *	2002-01-11	2003-07-17	Clariant International Ltd.	A cleaning agent composition for a positive or a negative photoresist

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3978255B2 (ja) *	1997-06-24	2007-09-19	Ａｚエレクトロニックマテリアルズ株式会社	リソグラフィー用洗浄剤
KR100271761B1 (ko) *	1997-11-21	2000-12-01	윤종용	반도체장치 제조용 현상장치 및 그의 제어방법
KR100638243B1 (ko) *	2000-11-20	2006-10-24	주식회사 동진쎄미켐	액정 디스플레이 디바이스용 레지스트 세정액 조성물
KR100569533B1 (ko) *	2001-10-25	2006-04-07	주식회사 하이닉스반도체	포토레지스트 세정용 조성물
KR100843984B1 (ko) *	2002-02-22	2008-07-07	주식회사 동진쎄미켐	감광성 수지 조성물을 제거하기 위한 씬너 조성물

2004
- 2004-05-25 KR KR1020040037385A patent/KR101142868B1/ko active IP Right Grant
2005
- 2005-05-19 JP JP2005146572A patent/JP4669737B2/ja not_active Expired - Fee Related
- 2005-05-19 TW TW094116294A patent/TWI405051B/zh not_active IP Right Cessation
- 2005-05-25 CN CN2005100740420A patent/CN1702560B/zh not_active Expired - Fee Related

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH07128867A (ja) *	1993-06-28	1995-05-19	Tokyo Ohka Kogyo Co Ltd	レジスト洗浄除去用溶剤及びそれを使用する電子部品製造用基材の製造方法
WO2003058350A1 (en) *	2002-01-11	2003-07-17	Clariant International Ltd.	A cleaning agent composition for a positive or a negative photoresist

Also Published As

Publication number	Publication date
CN1702560A (zh)	2005-11-30
TWI405051B (zh)	2013-08-11
KR20050112333A (ko)	2005-11-30
CN1702560B (zh)	2011-08-03
KR101142868B1 (ko)	2012-05-10
TW200604760A (en)	2006-02-01
JP2005338825A (ja)	2005-12-08

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