TW200604760A - Thinner composition for removing photosensitive resin - Google Patents

Thinner composition for removing photosensitive resin

Info

Publication number
TW200604760A
TW200604760A TW094116294A TW94116294A TW200604760A TW 200604760 A TW200604760 A TW 200604760A TW 094116294 A TW094116294 A TW 094116294A TW 94116294 A TW94116294 A TW 94116294A TW 200604760 A TW200604760 A TW 200604760A
Authority
TW
Taiwan
Prior art keywords
thinner composition
provides
photosensitive resin
alkyl
liquid crystal
Prior art date
Application number
TW094116294A
Other languages
Chinese (zh)
Other versions
TWI405051B (en
Inventor
Suk-Il Yoon
Hee-Jin Park
Jong-Hyun Jeong
Byung-Uk Kim
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of TW200604760A publication Critical patent/TW200604760A/en
Application granted granted Critical
Publication of TWI405051B publication Critical patent/TWI405051B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/044—Hydroxides or bases
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5013—Organic solvents containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The invention provides a thinner composition for removing photoresist, which is used at peripheral and back portions of a wafer during manufacturing a glass substrate and a semiconductor for a liquid crystal display to remove undesirable photoresist efficiently in a short period. The invention provides a thinner composition for removing photoresist including (a) alkyl amide, and (b) alkyl ethanoate. Preferably, the thinner composition includes (a) 1-99 parts by weight of alkyl amide, and (b) 1-80 parts by weight of alkyl ethanoate. Additionally, the invention provides a method for manufacturing a semiconductor device or a liquid crystal display using the thinner composition.
TW094116294A 2004-05-25 2005-05-19 Thinner composition for removing photosensitive resin TWI405051B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040037385A KR101142868B1 (en) 2004-05-25 2004-05-25 Thinner composition for removing photosensitive resin

Publications (2)

Publication Number Publication Date
TW200604760A true TW200604760A (en) 2006-02-01
TWI405051B TWI405051B (en) 2013-08-11

Family

ID=35492409

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094116294A TWI405051B (en) 2004-05-25 2005-05-19 Thinner composition for removing photosensitive resin

Country Status (4)

Country Link
JP (1) JP4669737B2 (en)
KR (1) KR101142868B1 (en)
CN (1) CN1702560B (en)
TW (1) TWI405051B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200641560A (en) * 2005-02-09 2006-12-01 Showa Denko Kk Photosensitive composition removing liquid
US8021490B2 (en) 2007-01-04 2011-09-20 Eastman Chemical Company Substrate cleaning processes through the use of solvents and systems
WO2014104192A1 (en) * 2012-12-27 2014-07-03 富士フイルム株式会社 Resist-removing liquid and resist-stripping method
KR102445582B1 (en) * 2016-02-11 2022-09-22 주식회사 이엔에프테크놀로지 Thinner composition for removing color resist
CN106773562A (en) * 2016-12-23 2017-05-31 昆山艾森半导体材料有限公司 A kind of removal AZ photoresists remove glue
CN114375378B (en) 2019-09-24 2024-02-09 大金工业株式会社 Welded body

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3248781B2 (en) * 1993-06-28 2002-01-21 東京応化工業株式会社 Solvent for removing and cleaning resist and method for producing base material for producing electronic parts using the same
JP3978255B2 (en) * 1997-06-24 2007-09-19 Ａｚエレクトロニックマテリアルズ株式会社 Lithographic cleaning agent
KR100271761B1 (en) * 1997-11-21 2000-12-01 윤종용 Manufacturing method of semiconductor device
KR100638243B1 (en) * 2000-11-20 2006-10-24 주식회사 동진쎄미켐 Thinner compositon for washing resist of lcd device
KR100569533B1 (en) * 2001-10-25 2006-04-07 주식회사 하이닉스반도체 Solution composition for removing a remaining photoresist resins
US7172996B2 (en) * 2002-01-11 2007-02-06 Az Electronic Materials Usa Corp. Cleaning agent composition for a positive or a negative photoresist
KR100843984B1 (en) * 2002-02-22 2008-07-07 주식회사 동진쎄미켐 Thinner composition for removing photosensitive resin

Also Published As

Publication number Publication date
CN1702560A (en) 2005-11-30
KR101142868B1 (en) 2012-05-10
KR20050112333A (en) 2005-11-30
CN1702560B (en) 2011-08-03
TWI405051B (en) 2013-08-11
JP2005338825A (en) 2005-12-08
JP4669737B2 (en) 2011-04-13

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees