JP4666219B2 - container - Google Patents

container Download PDF

Info

Publication number
JP4666219B2
JP4666219B2 JP2005348955A JP2005348955A JP4666219B2 JP 4666219 B2 JP4666219 B2 JP 4666219B2 JP 2005348955 A JP2005348955 A JP 2005348955A JP 2005348955 A JP2005348955 A JP 2005348955A JP 4666219 B2 JP4666219 B2 JP 4666219B2
Authority
JP
Japan
Prior art keywords
surface treatment
substrate
treatment jig
induction coil
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005348955A
Other languages
Japanese (ja)
Other versions
JP2007157886A (en
Inventor
周史 小枝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2005348955A priority Critical patent/JP4666219B2/en
Publication of JP2007157886A publication Critical patent/JP2007157886A/en
Application granted granted Critical
Publication of JP4666219B2 publication Critical patent/JP4666219B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Description

本発明は、表面処理用冶具に関するものである。   The present invention relates to a surface treatment jig.

近年、半導体ウェハー等の基板の加工においては、基板の薄型化や基板両面への素子形成が盛んに行われている。
しかしながら、基板を薄型化すると、基板のハンドリングが難しい。また、基板両面に素子を形成する場合には、加工面の裏面が加工用ステージと接触するのを避ける必要がある。
In recent years, in the processing of a substrate such as a semiconductor wafer, thinning of the substrate and element formation on both surfaces of the substrate are actively performed.
However, when the substrate is thinned, it is difficult to handle the substrate. Further, when elements are formed on both surfaces of the substrate, it is necessary to avoid the back surface of the processing surface from coming into contact with the processing stage.

これらの課題に対し、基板に保護シートを貼り付けることで、薄い基板を補強し、裏面の素子が加工用ステージ等に接触して破損するのを防止する方法が利用されている。
このような保護シートには、紫外線や熱を加えることにより基板からの剥離が容易になるなどの工夫がされていることが一般的である。しかし、保護シートは有機材料であることから、例えば全ての半導体プロセスに対応することは困難である。そのため、一連の製造プロセスの間に、何度も保護シートを貼りなおす必要があり、大量の廃棄物が生じていた。また、基板からの剥離が容易とはいえ、貼り合わせには細心の注意が必要で、剥離後も接着剤が残っていないか検査する必要があった。さらに、基板の裏面に段差形状が形成されている場合には、保護シートを貼り付けることは困難であった。
For these problems, a method is used in which a protective sheet is attached to the substrate to reinforce the thin substrate and prevent the elements on the back surface from coming into contact with the processing stage or the like and being damaged.
Such a protective sheet is generally devised such that it can be easily peeled off from the substrate by applying ultraviolet rays or heat. However, since the protective sheet is an organic material, it is difficult to cope with all semiconductor processes, for example. Therefore, it was necessary to reapply the protective sheet many times during a series of manufacturing processes, and a large amount of waste was generated. Further, although it is easy to peel off from the substrate, it is necessary to pay close attention to the bonding, and it is necessary to inspect whether the adhesive remains after the peeling. Furthermore, when the step shape is formed on the back surface of the substrate, it is difficult to attach the protective sheet.

そこで、特許文献1に開示されているような、真空吸着を利用して裏面に貼付することが可能な表面処理用治具が提案されている。しかし、このような治具は負圧によって基板に吸着していることから、真空装置内では吸着力を維持することができない。よって、真空処理を含む製造プロセスでは使用できない。   Then, the surface treatment jig | tool which can be affixed on a back surface using vacuum suction as disclosed by patent document 1 is proposed. However, since such a jig is adsorbed to the substrate by a negative pressure, the adsorbing force cannot be maintained in the vacuum apparatus. Therefore, it cannot be used in a manufacturing process including vacuum processing.

特開2005−126815号公報JP 2005-126815 A

本発明の目的は、真空装置内でも利用可能であり、移送も容易な基板裏面保護用の表面処理用治具を得ることである。   An object of the present invention is to obtain a surface treatment jig for protecting the back surface of a substrate that can be used in a vacuum apparatus and can be easily transferred.

本発明に係るコンテナは、表面処理用治具に取り付けた加工基板を収納するコンテナであって、前記表面処理用治具は、渦巻状の第1の誘導コイルと、前記第1の誘導コイルから供給される電流によって充電される電荷保持部と、前記電荷保持部から電力の供給を受ける電極パターンと、前記電極パターンを覆う絶縁層を備え、前記絶縁層を介して、前記電極パターンとの間の静電引力により被加工基板を吸着し、前記コンテナは、交流電源と、複数の第2の誘導コイルと、各々の第2の誘導コイルの間に設けられた基板収納部と、を備え、前記表面処理用治具に取り付けられた前記加工基板は、前記基板収納部に、前記第1の誘導コイルの渦巻面と前記第2の誘導コイルの渦巻面が平行になるように設置され、前記交流電源からの交流電流が前記第2の誘導コイルに供給されると、前記基板収納部内に前記第1の誘導コイルの渦巻面と垂直な方向の交流磁界が発生し、前記第1の誘導コイルに交流電流が生じる、ものである。
これにより、表面処理用治具単独で電流供給が可能となり、表面処理用治具に電源供給用のコード等を設ける必要がないので、表面処理用治具を取り付けた状態で加工対象基板の移送が容易に行える。
The container which concerns on this invention is a container which accommodates the processed substrate attached to the surface treatment jig | tool, Comprising: The said surface treatment jig | tool is from the spiral 1st induction coil and the said 1st induction coil. A charge holding unit that is charged by a supplied current; an electrode pattern that is supplied with electric power from the charge holding unit; and an insulating layer that covers the electrode pattern, the gap between the electrode pattern and the electrode pattern. The container is provided with an alternating current power source, a plurality of second induction coils, and a substrate storage portion provided between each of the second induction coils, The processed substrate attached to the surface treatment jig is installed in the substrate storage portion so that the spiral surface of the first induction coil and the spiral surface of the second induction coil are parallel to each other, AC current from AC power supply When supplied to the second induction coil, an alternating magnetic field in a direction perpendicular to the spiral surface of the first induction coil is generated in the substrate housing portion, and an alternating current is generated in the first induction coil. It is.
This makes it possible to supply current with the surface treatment jig alone, and it is not necessary to provide a power supply cord or the like to the surface treatment jig, so the substrate to be processed can be transferred with the surface treatment jig attached. Can be done easily.

特に、加工対象基板を真空装置内に移す場合、真空装置は密封されるためコードなどが取り付けられていると不便であるが、本発明によれば、表面処理用治具に装着したままで加工対象基板を真空装置内に入れることができる。   In particular, when transferring the substrate to be processed into a vacuum apparatus, it is inconvenient if a cord or the like is attached because the vacuum apparatus is sealed, but according to the present invention, processing is performed with the surface mounted on the surface treatment jig. The target substrate can be placed in a vacuum apparatus.

このように、加工対象基板の製造工程を通して、表面処理用治具を取り付けておくことができるため、表面処理用治具の着脱による工数の増加を防止でき、廃棄物の量も減らすことができる。   As described above, since the surface treatment jig can be attached throughout the manufacturing process of the substrate to be processed, it is possible to prevent an increase in man-hours due to the attachment / detachment of the surface treatment jig and to reduce the amount of waste. .

また、電荷保持部を設けたことにより、電流の供給がなくても、数十秒〜数分程度の間吸着力を維持できる程度の電圧保持が可能となる。これにより、搬送用キャリア等から真空装置等の加工装置内へ表面処理用治具を移す間の吸着力の保持が可能となる。   Further, by providing the charge holding portion, it is possible to hold the voltage enough to maintain the attractive force for about several tens of seconds to several minutes without supplying current. This makes it possible to maintain the suction force during the transfer of the surface treatment jig from the carrier for conveyance to a processing apparatus such as a vacuum apparatus.

また、誘導コイルを設けたことにより、外部から与えられる交流磁界によって電磁誘導により電流を発生させることができる。すなわち、コンテナから交流磁界を供給するだけで、表面処理用治具の吸着力を維持することが可能となる。 Further, by providing the induction coil, a current can be generated by electromagnetic induction by an alternating magnetic field given from the outside. That is, it is possible to maintain the attracting force of the surface treatment jig simply by supplying an AC magnetic field from the container .

また、前記表面処理用治具は、外部から電流の供給を受ける端子をさらに備え、前記電荷保持部は、前記端子を介して供給される電流によって充電される、ことが望ましい。
これにより、電荷保持部に数十秒〜数分程度の間吸着力を維持できる程度の電圧保持が可能なので、コンテナから真空装置等の加工装置内へ表面処理用治具を移す間の吸着力の保持が可能となる。
In addition, it is preferable that the surface treatment jig further includes a terminal that receives a current from the outside, and the charge holding unit is charged by a current supplied through the terminal.
As a result, it is possible to hold the voltage to the charge holding portion so that the suction force can be maintained for several tens of seconds to several minutes, so the suction force during the transfer of the surface treatment jig from the container into the processing device such as a vacuum device. Can be maintained.

前記電荷保持部は例えばフィルムキャパシタとすることができる。フィルムキャパシタを用いることにより、装置の軽量化、小型化を図ることができる。
電荷保持部には、電池等を用いることもできる。
なお、本発明の表面処理用治具は、各種半導体プロセス、水晶発振子、マイクロマシン全般に適用することができる。
The charge holding part may be a film capacitor, for example. By using a film capacitor, the apparatus can be reduced in weight and size.
A battery or the like can also be used for the charge holding portion.
The surface treatment jig of the present invention can be applied to various semiconductor processes, crystal oscillators, and micromachines in general.

以下、本発明の実施の形態について図面を参照して説明する。
実施の形態1.
図1は、本発明の実施の形態1による静電力を利用した表面処理用治具100の断面図である。上側ケース101、下側ケース102、フィルムキャパシタ(電荷保持部)103、誘導コイル(電流供給部)104、整流回路105、制御回路106、昇圧回路107、導通電極108、電極パターン109、絶縁層110を備えている。
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
Embodiment 1 FIG.
FIG. 1 is a cross-sectional view of a surface treatment jig 100 using an electrostatic force according to Embodiment 1 of the present invention. Upper case 101, lower case 102, film capacitor (charge holding unit) 103, induction coil (current supply unit) 104, rectifier circuit 105, control circuit 106, booster circuit 107, conductive electrode 108, electrode pattern 109, insulating layer 110 It has.

上側ケース101および下側ケース102は、ガラス、セラミック等のプロセス条件に適した材料で形成される。上側ケース101と下側ケース102を合わせると内部に空間が形成され、その空間にフィルムキャパシタ103、誘導コイル104、整流回路105、制御回路106、および昇圧回路107が収納される。整流回路105、制御回路106、昇圧回路107は、ダイオードやトランジスタなどを用いた一般的な回路を用いることができる。   The upper case 101 and the lower case 102 are formed of a material suitable for process conditions such as glass and ceramic. When the upper case 101 and the lower case 102 are combined, a space is formed therein, and the film capacitor 103, the induction coil 104, the rectifier circuit 105, the control circuit 106, and the booster circuit 107 are accommodated in the space. As the rectifier circuit 105, the control circuit 106, and the booster circuit 107, a general circuit using a diode, a transistor, or the like can be used.

上側ケース101の上には電極パターン109が設けられており、上側ケース101に埋め込まれた導通電極108を通してケース内部の回路と接続されている。電極パターン109の上には絶縁層110が設けられている。電極パターン109は、図2(A)に示すように、双極方式の電極パターンである。   An electrode pattern 109 is provided on the upper case 101 and is connected to a circuit inside the case through a conductive electrode 108 embedded in the upper case 101. An insulating layer 110 is provided on the electrode pattern 109. The electrode pattern 109 is a bipolar electrode pattern as shown in FIG.

下側ケース102には、図2(B)に示すような渦巻状の誘導コイル104が設けられている。誘導コイル104には、外部から供給される交流磁界により交流電流が生じる。誘導コイル104に生じた交流電流は、整流回路105を経てフィルムキャパシタ103に供給され、フィルムキャパシタ103を充電する。   The lower case 102 is provided with a spiral induction coil 104 as shown in FIG. An alternating current is generated in the induction coil 104 by an alternating magnetic field supplied from the outside. The alternating current generated in the induction coil 104 is supplied to the film capacitor 103 via the rectifier circuit 105 and charges the film capacitor 103.

フィルムキャパシタ103は、軽量化、小型化に適しているが、多くても数十V程度の電圧しか得られないため、制御回路106、昇圧回路107を通して数百〜1kVに昇圧し、導通電極108を通して電極パターン109に供給する。ここで、表面処理用治具100が基板を吸着するためには、一般に数百〜1kVの電圧が必要である。   The film capacitor 103 is suitable for weight reduction and downsizing, but since only a voltage of about several tens of volts can be obtained at most, the film capacitor 103 is boosted to several hundreds to 1 kV through the control circuit 106 and the booster circuit 107, and the conductive electrode 108 is obtained. Is supplied to the electrode pattern 109. Here, in order for the surface treatment jig 100 to attract the substrate, a voltage of several hundred to 1 kV is generally required.

表面処理用治具100と基板(被加工基板)200の吸着原理について説明する。
基板200は、絶縁層110の上に設置される。電極パターン109に電圧が印加されることにより、図3に示すように絶縁層110上の基板200が分極し、表面処理用治具100と基板200がコンデンサーを構成する状態となり、両者は静電力により吸着する。
The principle of suction between the surface treatment jig 100 and the substrate (substrate to be processed) 200 will be described.
The substrate 200 is installed on the insulating layer 110. When a voltage is applied to the electrode pattern 109, the substrate 200 on the insulating layer 110 is polarized as shown in FIG. 3, and the surface treatment jig 100 and the substrate 200 constitute a capacitor. Adsorbed by

ここで、表面処理用治具100と基板200は絶縁層110によって絶縁されており、放電が発生しない限り吸着力は保持されるはずであるが、実際には高電圧による電荷のリークが避けられない。このため、搬送用キャリア等、外部装置から供給される交流磁界から表面処理用治具100を離すと、僅かな時間で基板200の吸着力が消失する。   Here, the surface treatment jig 100 and the substrate 200 are insulated by the insulating layer 110, and the adsorption force should be maintained unless discharge occurs, but in reality, charge leakage due to high voltage can be avoided. Absent. For this reason, when the surface treatment jig 100 is separated from an AC magnetic field supplied from an external device such as a carrier for conveyance, the adsorption force of the substrate 200 disappears in a short time.

そこで、表面処理用治具100を貼り付けた基板200の移送、加工中は、常に交流磁界を発生する専用コンテナ等に収納しておく必要がある。
図4は、表面処理用治具を貼り付けた加工基板を収納するコンテナ300を示す図である。図に示すように、コンテナ300は交流電源301、複数の誘導コイル302、誘導コイル302と誘導コイル302の間に設けられた基板収納部303を備えている。
Therefore, during the transfer and processing of the substrate 200 to which the surface treatment jig 100 is attached, it is necessary to always store it in a dedicated container or the like that generates an alternating magnetic field.
FIG. 4 is a view showing a container 300 for storing a processed substrate on which a surface treatment jig is attached. As shown in the figure, the container 300 includes an AC power supply 301, a plurality of induction coils 302, and a substrate storage portion 303 provided between the induction coils 302.

表面処理用治具100に取り付けられた基板200は、この基板収納部303に、誘導コイル104の渦巻面と誘導コイル302の渦巻面が平行になるように設置される。
交流電源301からの交流電流が誘導コイル302に供給されると、基板収納部303内に誘導コイル104の渦巻面と垂直な方向の交流磁界が発生し、誘導コイル104に交流電流が生じる。
The substrate 200 attached to the surface treatment jig 100 is installed in the substrate housing 303 so that the spiral surface of the induction coil 104 and the spiral surface of the induction coil 302 are parallel to each other.
When an alternating current from the alternating current power supply 301 is supplied to the induction coil 302, an alternating magnetic field in a direction perpendicular to the spiral surface of the induction coil 104 is generated in the substrate housing 303, and an alternating current is generated in the induction coil 104.

以上のように、実施の形態1によれば、表面処理用治具100に、誘導コイル104と、誘導コイル104から供給される交流電流により充電されるフィルムキャパシタ103とを設け、フィルムキャパシタ103の電圧を電極パターン109に印加することにより、基板200を分極させ、静電引力で吸着するようにしたので、外部のコンテナ等から交流磁界を供給するだけで、表面処理用治具100の吸着力を維持することが可能である。このため、表面処理用治具100に電源供給用のコード等を設ける必要がないので、表面処理用治具100を取り付けた状態で基板200の移送が容易に行える。   As described above, according to the first embodiment, the surface treatment jig 100 is provided with the induction coil 104 and the film capacitor 103 charged by the alternating current supplied from the induction coil 104. By applying a voltage to the electrode pattern 109, the substrate 200 is polarized and attracted by electrostatic attraction, so that the attracting force of the surface treatment jig 100 can be obtained simply by supplying an AC magnetic field from an external container or the like. Can be maintained. For this reason, since it is not necessary to provide a power supply cord or the like on the surface treatment jig 100, the substrate 200 can be easily transferred with the surface treatment jig 100 attached.

特に、基板200を真空装置内に移す場合、真空装置は密封されるためコードなどが取り付けられていると不便であるが、実施の形態1による表面処理用治具100を用いれば、表面処理用治具100に装着したままで基板200を真空装置内に入れることができる。   In particular, when the substrate 200 is moved into the vacuum apparatus, it is inconvenient if a cord or the like is attached because the vacuum apparatus is sealed. However, if the surface treatment jig 100 according to the first embodiment is used, the surface treatment jig 100 is used. The substrate 200 can be placed in the vacuum apparatus while being mounted on the jig 100.

このように、基板200の製造工程を通して、表面処理用治具100を取り付けておくことができるため、表面処理用治具100の着脱による工数の増加を防止でき、廃棄物の量も減らすことができる。   Thus, since the surface treatment jig 100 can be attached throughout the manufacturing process of the substrate 200, an increase in man-hours due to the attachment / detachment of the surface treatment jig 100 can be prevented, and the amount of waste can be reduced. it can.

また、フィルムキャパシタ103を設けたことにより、外部からの交流磁界の供給がなくても、数十秒〜数分程度の間吸着力を維持できる程度の電圧供給が可能となる。これにより、移動用キャリア等から真空装置等の加工装置内へ表面処理用治具100を移す間の吸着力の保持が可能となる。   Further, by providing the film capacitor 103, it is possible to supply a voltage that can maintain the attractive force for several tens of seconds to several minutes without supplying an AC magnetic field from the outside. This makes it possible to maintain the suction force during the transfer of the surface treatment jig 100 from the moving carrier or the like into a processing apparatus such as a vacuum apparatus.

なお、表面処理用治具100は、各種半導体プロセス、水晶発振子、マイクロマシン全般に適用することができる。   The surface treatment jig 100 can be applied to various semiconductor processes, crystal oscillators, and micromachines in general.

なお、実施の形態1では、電磁誘導によって誘導コイル104に発生した交流電流を用いてフィルムキャパシタ103を充電したが、フィルムキャパシタ103に電流を供給する手段はこれに限られず、例えば、表面処理用治具100内に太陽電池を備えて電流を供給してもよい。   In the first embodiment, the film capacitor 103 is charged using the alternating current generated in the induction coil 104 by electromagnetic induction. However, the means for supplying the current to the film capacitor 103 is not limited to this, for example, for surface treatment A solar cell may be provided in the jig 100 to supply current.

実施の形態2.
図5は、本発明の実施の形態2による表面処理用治具400の断面図である。実施の形態2では、表面処理用治具400の外部に端子401を設け、フィルムキャパシタ103に外部から直接電流を供給して充電できるようにしている。
Embodiment 2. FIG.
FIG. 5 is a cross-sectional view of a surface treatment jig 400 according to Embodiment 2 of the present invention. In the second embodiment, a terminal 401 is provided outside the surface treatment jig 400 so that the film capacitor 103 can be charged by supplying current directly from the outside.

図6は、実施の形態2による表面処理用治具を貼り付けた加工基板を収納するコンテナ500を示す図である。図に示すように、コンテナ500は直流電源501、複数の端子502、複数の基板収納部503を備えている。   FIG. 6 is a view showing a container 500 for storing a processed substrate to which a surface treatment jig according to the second embodiment is attached. As shown in the figure, the container 500 includes a DC power source 501, a plurality of terminals 502, and a plurality of substrate storage units 503.

表面処理用治具400に取り付けられた基板200は、この基板収納部503に、端子401を端子502に接触させて設置される。
直流電源501からの電流は、端子502、端子401を介してフィルムキャパシタ103に供給され、フィルムキャパシタ103が充電される。
The substrate 200 attached to the surface treatment jig 400 is installed in the substrate storage portion 503 with the terminal 401 in contact with the terminal 502.
The current from the DC power source 501 is supplied to the film capacitor 103 via the terminal 502 and the terminal 401, and the film capacitor 103 is charged.

実施の形態2によれば、表面処理用治具400にさらに端子401を設けたので、外部から供給される電流によってもフィルムキャパシタ103の充電をすることが可能である。
なお、表面処理用治具400は、誘導コイル104を設けず、端子401を介した外部からの電流のみでフィルムキャパシタ103を充電する構成とすることもできる。
According to the second embodiment, since the terminal 401 is further provided on the surface treatment jig 400, the film capacitor 103 can be charged by a current supplied from the outside.
The surface treatment jig 400 may be configured to charge the film capacitor 103 only by an external current through the terminal 401 without providing the induction coil 104.

図1は、本発明の実施の形態1による表面処理用治具の断面図である。1 is a cross-sectional view of a surface treatment jig according to Embodiment 1 of the present invention. 図2(A)は、実施の形態1による表面処理用治具の電極パターンを図1のA方向から見た図、図2(B)は、誘導コイルを図1のA方向から見た図である。2A is a view of the electrode pattern of the surface treatment jig according to the first embodiment as viewed from the direction A in FIG. 1, and FIG. 2B is a view of the induction coil as viewed from the direction A in FIG. It is. 図3は、実施の形態1による表面処理用治具と基板の吸着原理を説明する図である。FIG. 3 is a diagram for explaining the adsorption principle of the surface treatment jig and the substrate according to the first embodiment. 図4は、実施の形態1による表面処理用治具を貼り付けた加工基板を収納するコンテナの例を示す図である。FIG. 4 is a diagram illustrating an example of a container for storing a processed substrate on which a surface treatment jig according to Embodiment 1 is attached. 図5は、本発明の実施の形態2による表面処理用治具の断面図である。FIG. 5 is a cross-sectional view of a surface treatment jig according to Embodiment 2 of the present invention. 図6は、実施の形態2による表面処理用治具を貼り付けた加工基板を収納するコンテナの他の例を示す図である。FIG. 6 is a view showing another example of a container for storing a processed substrate to which a surface treatment jig according to the second embodiment is attached.

符号の説明Explanation of symbols

100,400 表面処理用治具、101 上側ケース、102 下側ケース、103 フィルムキャパシタ、104 誘導コイル、105 整流回路、106 制御回路、107 昇圧回路、108 導通電極、109 電極パターン、110 絶縁層、200 基板、300,500 コンテナ、301 交流電源、302 誘導コイル、303,503 基板収納部、401 端子、501 直流電源、502 端子

100, 400 Surface treatment jig, 101 Upper case, 102 Lower case, 103 Film capacitor, 104 Inductive coil, 105 Rectifier circuit, 106 Control circuit, 107 Booster circuit, 108 Conductive electrode, 109 Electrode pattern, 110 Insulating layer, 200 substrate, 300, 500 container, 301 AC power source, 302 induction coil, 303, 503 substrate storage unit, 401 terminal, 501 DC power source, 502 terminal

Claims (3)

表面処理用治具に取り付けた加工基板を収納するコンテナであって、
前記表面処理用治具は、
渦巻状の第1の誘導コイルと、
前記第1の誘導コイルから供給される電流によって充電される電荷保持部と、
前記電荷保持部から電力の供給を受ける電極パターンと、
前記電極パターンを覆う絶縁層を備え、
前記絶縁層を介して、前記電極パターンとの間の静電引力により被加工基板を吸着し、
前記コンテナは、
交流電源と、
複数の第2の誘導コイルと、各々の第2の誘導コイルの間に設けられた基板収納部と、を備え、
前記表面処理用治具に取り付けられた前記加工基板は、前記基板収納部に、前記第1の誘導コイルの渦巻面と前記第2の誘導コイルの渦巻面が平行になるように設置され、
前記交流電源からの交流電流が前記第2の誘導コイルに供給されると、前記基板収納部内に前記第1の誘導コイルの渦巻面と垂直な方向の交流磁界が発生し、前記第1の誘導コイルに交流電流が生じる、コンテナ。
A container for storing a processed substrate attached to a surface treatment jig,
The surface treatment jig is
A spiral first induction coil;
A charge holding unit charged by a current supplied from the first induction coil;
An electrode pattern that receives power from the charge holding unit;
An insulating layer covering the electrode pattern;
The substrate to be processed is attracted by electrostatic attraction between the electrode pattern through the insulating layer,
The container is
AC power supply,
A plurality of second induction coils, and a substrate storage portion provided between each of the second induction coils,
The processed substrate attached to the surface treatment jig is installed in the substrate housing portion so that the spiral surface of the first induction coil and the spiral surface of the second induction coil are parallel to each other,
When an alternating current from the alternating current power source is supplied to the second induction coil, an alternating magnetic field in a direction perpendicular to the spiral surface of the first induction coil is generated in the substrate housing portion, and the first induction is generated. A container that generates an alternating current in the coil.
前記表面処理用治具は、
外部から電流の供給を受ける端子をさらに備え、
前記電荷保持部は、前記端子を介して供給される電流によって充電される、請求項1に記載のコンテナ。
The surface treatment jig is
It further includes a terminal for receiving a current supply from the outside,
The container according to claim 1, wherein the charge holding unit is charged by a current supplied through the terminal.
前記電荷保持部はフィルムキャパシタであることを特徴とする請求項1または請求項2に記載のコンテナ。   The container according to claim 1, wherein the charge holding unit is a film capacitor.
JP2005348955A 2005-12-02 2005-12-02 container Expired - Fee Related JP4666219B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005348955A JP4666219B2 (en) 2005-12-02 2005-12-02 container

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005348955A JP4666219B2 (en) 2005-12-02 2005-12-02 container

Publications (2)

Publication Number Publication Date
JP2007157886A JP2007157886A (en) 2007-06-21
JP4666219B2 true JP4666219B2 (en) 2011-04-06

Family

ID=38241881

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005348955A Expired - Fee Related JP4666219B2 (en) 2005-12-02 2005-12-02 container

Country Status (1)

Country Link
JP (1) JP4666219B2 (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007305938A (en) * 2006-05-15 2007-11-22 Tomoegawa Paper Co Ltd Electrostatic absorber
EP2330619B1 (en) * 2008-09-17 2019-06-12 Creative Technology Corporation Substrate processing apparatus and substrate processing method
JP5328726B2 (en) 2009-08-25 2013-10-30 三星ディスプレイ株式會社 Thin film deposition apparatus and organic light emitting display device manufacturing method using the same
JP5677785B2 (en) 2009-08-27 2015-02-25 三星ディスプレイ株式會社Samsung Display Co.,Ltd. Thin film deposition apparatus and organic light emitting display device manufacturing method using the same
JP5611718B2 (en) * 2009-08-27 2014-10-22 三星ディスプレイ株式會社Samsung Display Co.,Ltd. Thin film deposition apparatus and organic light emitting display device manufacturing method using the same
US8876975B2 (en) 2009-10-19 2014-11-04 Samsung Display Co., Ltd. Thin film deposition apparatus
KR101084184B1 (en) 2010-01-11 2011-11-17 삼성모바일디스플레이주식회사 Apparatus for thin layer deposition
KR101174875B1 (en) 2010-01-14 2012-08-17 삼성디스플레이 주식회사 Apparatus for thin layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the method
KR101193186B1 (en) 2010-02-01 2012-10-19 삼성디스플레이 주식회사 Apparatus for thin layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the method
KR101156441B1 (en) 2010-03-11 2012-06-18 삼성모바일디스플레이주식회사 Apparatus for thin layer deposition
KR101202348B1 (en) 2010-04-06 2012-11-16 삼성디스플레이 주식회사 Apparatus for thin layer deposition and method for manufacturing of organic light emitting display apparatus using the same
US8894458B2 (en) 2010-04-28 2014-11-25 Samsung Display Co., Ltd. Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method
KR101223723B1 (en) 2010-07-07 2013-01-18 삼성디스플레이 주식회사 Apparatus for thin layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the method
KR101723506B1 (en) 2010-10-22 2017-04-19 삼성디스플레이 주식회사 Apparatus for organic layer deposition and method for manufacturing of organic light emitting display apparatus using the same
KR101738531B1 (en) 2010-10-22 2017-05-23 삼성디스플레이 주식회사 Method for manufacturing of organic light emitting display apparatus, and organic light emitting display apparatus manufactured by the method
KR20120045865A (en) 2010-11-01 2012-05-09 삼성모바일디스플레이주식회사 Apparatus for organic layer deposition
KR20120065789A (en) 2010-12-13 2012-06-21 삼성모바일디스플레이주식회사 Apparatus for organic layer deposition
KR101760897B1 (en) 2011-01-12 2017-07-25 삼성디스플레이 주식회사 Deposition source and apparatus for organic layer deposition having the same
KR101852517B1 (en) 2011-05-25 2018-04-27 삼성디스플레이 주식회사 Apparatus for organic layer deposition and method for manufacturing of organic light emitting display apparatus using the same
KR101840654B1 (en) 2011-05-25 2018-03-22 삼성디스플레이 주식회사 Apparatus for organic layer deposition and method for manufacturing of organic light emitting display apparatus using the same
KR101857249B1 (en) 2011-05-27 2018-05-14 삼성디스플레이 주식회사 Patterning slit sheet assembly, apparatus for organic layer deposition, method for manufacturing organic light emitting display apparatus and organic light emitting display apparatus
KR101826068B1 (en) 2011-07-04 2018-02-07 삼성디스플레이 주식회사 Apparatus for thin layer deposition
CN105579612B (en) 2013-09-20 2019-06-14 应用材料公司 Substrate carrier with integral type electrostatic chuck
WO2015171207A1 (en) * 2014-05-09 2015-11-12 Applied Materials, Inc. Substrate carrier system and method for using the same
JP6925711B2 (en) * 2017-04-12 2021-08-25 株式会社ディスコ Laser machining method for frame unit and workpiece
JP6899249B2 (en) * 2017-04-24 2021-07-07 株式会社ディスコ Wafer cassette
CN115985833B (en) * 2023-02-03 2023-11-14 广东海拓创新技术有限公司 Manufacturing method of electrostatic chuck with semi-permanent adsorption function

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0851137A (en) * 1994-08-08 1996-02-20 Shinko Electric Co Ltd Transferring device for semiconductor manufacturing apparatus
JP2002299426A (en) * 2001-03-29 2002-10-11 Toto Ltd Electrostatic chuck unit
JP2004165198A (en) * 2002-11-08 2004-06-10 Canon Inc Semiconductor manufacturing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0851137A (en) * 1994-08-08 1996-02-20 Shinko Electric Co Ltd Transferring device for semiconductor manufacturing apparatus
JP2002299426A (en) * 2001-03-29 2002-10-11 Toto Ltd Electrostatic chuck unit
JP2004165198A (en) * 2002-11-08 2004-06-10 Canon Inc Semiconductor manufacturing apparatus

Also Published As

Publication number Publication date
JP2007157886A (en) 2007-06-21

Similar Documents

Publication Publication Date Title
JP4666219B2 (en) container
TW506033B (en) Holding apparatus for object to be processed
US8724288B2 (en) Electrostatic chuck and vacuum processing apparatus
WO2005109489A1 (en) Work neutralizing method and apparatus thereof
TWI574328B (en) Devices, systems and methods for electrostatic force enhanced semiconductor bonding
TWI809182B (en) Cleaning device
CN102473668A (en) Electrostatic attracting structure and fabricating method therefor
EP2330619B1 (en) Substrate processing apparatus and substrate processing method
JP7453660B2 (en) Suction holding device and object surface processing method
JP6765761B2 (en) Electrostatic chuck device and electrostatic adsorption method
US9984913B2 (en) Tri-modal carrier for a semiconductive wafer
JP2004241443A (en) Manufacturing method of semiconductor apparatus
KR20170073055A (en) Electrostatic chuck
KR20110069490A (en) Method for chucking/dechucking of semiconductor substrate, apparatus and method for manufacturing of semiconductor device using the same
JP6758508B2 (en) Substrate processing method and substrate processing system
KR101526509B1 (en) Fixing chuck using lorentz force
JP2004111533A (en) Electrostatic attraction apparatus
JP6435481B1 (en) Work suction jig and work suction device
JP4323746B2 (en) Semiconductor wafer reinforcement plate
JP2010027652A (en) Substrate fixing member for electrostatic attraction
JPH0216749A (en) Wafer holder for electron beam exposure device
JP4189364B2 (en) Electrostatic chuck and processing apparatus using the same
JPH0145223B2 (en)
JPH09275132A (en) Electrostatic chuck device, wafer removal method and wafer treatment device
JPH08153766A (en) Electrostatic chuck and robot device equipped therewith

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080410

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100216

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101026

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101202

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101216

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101229

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140121

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4666219

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees