KR20110069490A - Method for chucking/dechucking of semiconductor substrate, apparatus and method for manufacturing of semiconductor device using the same - Google Patents

Method for chucking/dechucking of semiconductor substrate, apparatus and method for manufacturing of semiconductor device using the same Download PDF

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Publication number
KR20110069490A
KR20110069490A KR1020090126245A KR20090126245A KR20110069490A KR 20110069490 A KR20110069490 A KR 20110069490A KR 1020090126245 A KR1020090126245 A KR 1020090126245A KR 20090126245 A KR20090126245 A KR 20090126245A KR 20110069490 A KR20110069490 A KR 20110069490A
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South Korea
Prior art keywords
semiconductor substrate
substrate
chucking
dechucking
electrostatic adsorption
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KR1020090126245A
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Korean (ko)
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권기청
남창길
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주성엔지니어링(주)
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Priority to KR1020090126245A priority Critical patent/KR20110069490A/en
Publication of KR20110069490A publication Critical patent/KR20110069490A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention relates to a chucking / dechucking method of a semiconductor substrate capable of electrostatic adsorption of a semiconductor substrate without using a DC power supply and a DC electrode, and an apparatus and a manufacturing method of a semiconductor device using the same. A process chamber providing a reaction space; An electrostatic adsorption device provided in the process chamber to load a semiconductor substrate; A shower head which injects a substrate chucking / dechucking gas or a process gas into the reaction space; And a high frequency process for supplying the substrate chucking / dechucking high frequency power for forming the substrate chucking / dechucking plasma from the substrate chucking / dechucking gas to the electrostatic adsorption device or for forming a process plasma from the process gas. And a high frequency power supply for supplying power to the electrostatic adsorption device, wherein the semiconductor substrate is chucked to the electrostatic adsorption device by the substrate chucking plasma or dechucked at the electrostatic adsorption device by the substrate dechucking plasma. It is done.

Electrostatic adsorption device, direct current electrode, direct current power supply, chucking, dechucking

Description

METHOD FOR CHUCKING / DECHUCKING OF SEMICONDUCTOR SUBSTRATE, APPARATUS AND METHOD FOR MANUFACTURING OF SEMICONDUCTOR DEVICE USING THE SAME}

The present invention relates to a semiconductor manufacturing apparatus using an electrostatic adsorption device, and more particularly, to a chucking / dechucking method of a semiconductor substrate capable of electrostatically adsorbing a semiconductor substrate without using a DC power supply and a DC electrode, and a semiconductor device using the same. It relates to a manufacturing apparatus and a manufacturing method.

In general, a manufacturing process of each of the semiconductor device, the flat panel display device, or the solar cell includes an oxidation process, a deposition process, an etching process, and the like, which are performed while the semiconductor substrate is fixed in the chamber. In this case, conventionally, a mechanical method and a vacuum adsorption method are used to fix the semiconductor substrate, but recently, an electrostatic adsorption device using an electrostatic force is mainly used. Such electrostatic adsorption apparatuses are used in semiconductor manufacturing processes such as chemical vapor deposition, etching, sputtering, and ion implantation processes.

1 is a view for explaining a conventional electrostatic adsorption apparatus.

Referring to FIG. 1, the conventional electrostatic adsorption apparatus includes a base member 10; Insulator 20; DC electrode 30; And a direct current power source 40.

The base member 10 is made of aluminum. The base member 10 includes a protrusion 12 protruding to a predetermined height to form an insulator 20.

The insulator 20 is formed on the protrusion 12 of the base member 10 to electrically insulate the base member 10 and the direct current electrode 30.

The DC electrode 30 is formed inside the insulator 20 and is electrically connected to the DC power supply 40 through the base member 10 and the protrusion 12.

The DC power supply 40 generates a predetermined DC voltage and supplies it to the DC electrode 30. Accordingly, the DC electrode 30 generates an electrostatic force for electrostatically adsorbing the semiconductor substrate W on the insulator 20 according to the DC voltage supplied from the DC power supply 40.

The conventional electrostatic adsorption device is located between the DC electrode 30 and the semiconductor substrate W by supplying a DC voltage to the DC electrode 30 formed on the insulator 20 to generate an electrostatic force on the surface of the insulator 20. The semiconductor substrate W is adsorbed by using the Coulombic force and the Johnsonsen-Rahbeck Force generated in the insulating layer 20.

However, the conventional electrostatic adsorption apparatus requires a separate DC power supply 40 for supplying a DC voltage to the DC electrode 30 and the DC electrode 30 in order to electrostatically adsorb the semiconductor substrate W on the insulator 20. Therefore, there is a problem that the manufacturing process is complicated and the manufacturing cost increases.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and a chucking / dechucking method of a semiconductor substrate capable of electrostatically adsorbing a semiconductor substrate without using a DC power supply and a DC electrode, and an apparatus and a manufacturing method of a semiconductor device using the same. It is technical problem to provide.

The semiconductor device manufacturing apparatus according to the present invention for achieving the above technical problem is a process chamber for providing a reaction space; An electrostatic adsorption device provided in the process chamber to load a semiconductor substrate; A shower head which injects a substrate chucking / dechucking gas or a process gas into the reaction space; And a high frequency process for supplying the substrate chucking / dechucking high frequency power for forming the substrate chucking / dechucking plasma from the substrate chucking / dechucking gas to the electrostatic adsorption device or for forming a process plasma from the process gas. And a high frequency power supply for supplying power to the electrostatic adsorption device, wherein the semiconductor substrate is chucked to the electrostatic adsorption device by the substrate chucking plasma or dechucked at the electrostatic adsorption device by the substrate dechucking plasma. It is done.

The electrostatic adsorption device includes a base member provided in the process chamber to which the high frequency power is supplied; An insulator formed on the base member; And a helium gas line formed to penetrate the base member and the insulator.

The apparatus for manufacturing a semiconductor device supplies the helium gas between the semiconductor substrate and the insulator through the helium gas line when the semiconductor substrate is chucked, and between the semiconductor substrate and the insulator when the semiconductor substrate is dechucked. And a helium gas circulation device configured to exhaust the helium gas through the helium gas line.

The semiconductor substrate is chucked to the insulator due to polarization formed between the semiconductor substrate and the insulator by the helium gas and the substrate chucking plasma and / or the surface tension of the semiconductor substrate, and by the substrate dechucking plasma. And dechucking the insulator due to the removal of the polarization formed between the semiconductor substrate and the insulator.

The high frequency power supply the high frequency power for the substrate chucking to the base member when the semiconductor substrate is chucked, and the high frequency power for the substrate dechucking to the base member that is lower than the high frequency power for the substrate chucking when the semiconductor substrate is dechucked. It is characterized by the supply.

According to an aspect of the present invention, there is provided a chucking method of a semiconductor substrate, the method including: loading a semiconductor substrate into an electrostatic adsorption apparatus provided in a process chamber providing a reaction space; Supplying a gas for substrate chucking to the reaction space; And chucking the semiconductor substrate to the electrostatic adsorption device by forming a substrate chucking plasma generated from the substrate adsorption gas in the reaction space according to the high frequency power for substrate chucking supplied to the electrostatic adsorption device. It is characterized by.

The chucking method of the semiconductor substrate may further include supplying helium gas between the electrostatic adsorption device and the semiconductor substrate after forming the substrate chucking plasma.

The semiconductor substrate is chucked by the helium gas and the substrate chucking plasma due to polarization formed between the semiconductor substrate and the electrostatic adsorption device and / or the surface tension of the semiconductor substrate. .

According to an aspect of the present invention, there is provided a method of dechucking a semiconductor substrate, the method comprising: exhausting a process gas remaining in a reaction space of a process chamber having an electrostatic adsorption device on which the semiconductor substrate is chucked; Supplying a gas for substrate dechucking to the reaction space; And dechucking the semiconductor substrate in the electrostatic adsorption apparatus by forming a substrate dechucking plasma generated from the substrate dechucking gas in the reaction space according to the high frequency power for substrate dechucking supplied to the electrostatic adsorption apparatus. Characterized in that made.

The method of dechucking the semiconductor substrate may further include exhausting the process gas and then evacuating the helium gas supplied between the electrostatic adsorption device and the semiconductor substrate.

The semiconductor substrate is dechucked in the electrostatic adsorption apparatus due to the exhaust of the helium gas and the removal of the polarization formed between the semiconductor substrate and the electrostatic adsorption apparatus by the substrate dechucking plasma.

In accordance with another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, in which a semiconductor substrate is loaded into an electrostatic adsorption apparatus provided in a process chamber providing a reaction space, and a substrate chucking plasma is formed in the reaction space. Chucking the semiconductor substrate to an adsorption device; Forming a thin film on the semiconductor substrate by forming a process plasma in the reaction space; And forming a plasma for substrate dechucking in the reaction space to dechuck the semiconductor substrate in the electrostatic adsorption apparatus and to unload the semiconductor substrate in the electrostatic adsorption apparatus.

The semiconductor substrate is a wafer of 300 mm or more, and the substrate chucking / dechucking gas is an inert gas.

Forming a process plasma in the reaction space to form a thin film in the semiconductor substrate may include exhausting the substrate chucking gas remaining in the reaction space of the process chamber; Supplying a process gas to the reaction space; And supplying high frequency power for processing to the electrostatic adsorption device to form the process plasma generated from the process gas in the reaction space to form a thin film on the semiconductor substrate.

As described above, the present invention has the following effects.

First, the semiconductor substrate is chucked to the insulator by polarization formed between the insulator and the semiconductor substrate of the electrostatic adsorption apparatus by using plasma, or the semiconductor substrate is dechucked from the insulator by removing the polarization formed between the insulator and the semiconductor substrate. And the chucking / dechucking of the semiconductor substrate without the direct current electrode.

Second, since the chucking / dechucking of the semiconductor substrate can be performed without a DC power supply and a DC electrode, the manufacturing cost can be reduced by simplifying the configuration of the electrostatic adsorption device.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a view for explaining a semiconductor device manufacturing apparatus according to an embodiment of the present invention.

2, an apparatus for manufacturing a semiconductor device according to an embodiment of the present invention may include a process chamber 100; Electrostatic adsorption device 110; Shower head 120; High frequency power supply 130; Helium gas circulation device 140; And an exhaust device 150.

The process chamber 100 provides a reaction space for forming a thin film on the semiconductor substrate W using a plasma process. The semiconductor substrate W may be a large wafer 300 mm or more, and preferably a wafer having a size of 450 mm.

The electrostatic adsorption device 110 chucks the semiconductor substrate W by the substrate chucking plasma formed in the reaction space of the process chamber 100, or the substrate dechucking plasma formed in the reaction space of the process chamber 100. The semiconductor substrate W is thereby dechucked.

To this end, the electrostatic adsorption device 110 includes a base member 112; Insulator 114; Focus ring 116; And a helium gas line 118.

The base member 112 is formed of an aluminum material and is installed below the process chamber 100. In this case, the base member 112 includes a protrusion part protruding to a predetermined height to form the insulator 114.

The insulator 114 is formed on the protrusion of the base member 112. In this case, the insulator 114 may be formed of a ceramic material.

The focus ring 116 is formed in the base member 112 to surround the side of the protrusion and the side of the insulator 114. The focus ring 116 extends the region of the plasma formed in the reaction space so that the semiconductor substrate W is positioned at the center of the plasma so that the thin film is uniformly formed on the semiconductor substrate W. FIG.

The helium gas line 118 is formed to penetrate the base member 112 and the insulator 114. In this case, the helium gas line 118 may be divided into a helium gas inner line formed to penetrate the center region of the insulator 114 and an helium gas outer line formed to penetrate the edge region of the insulator 114.

The shower head 120 injects a process gas or a process gas for substrate chucking / dechucking, which is installed in the process chamber 100 so as to face the electrostatic adsorption apparatus 110 with the reaction space therebetween, and is selectively supplied from the outside. . At this time, the shower head 120 may include a diffusion member for diffusing the gas selectively supplied from the outside into the reaction space using a plurality of shower holes in order to uniformly inject the gas into the reaction space.

When the shower head 120 chucks the semiconductor substrate W to the electrostatic adsorption apparatus 100 or dechucks the semiconductor substrate W in the electrostatic adsorption apparatus 100, the gas for chucking / dechucking the substrate in the reaction space is provided. In the case of forming a thin film on the semiconductor substrate W, a process gas is injected into the reaction space. In this case, the substrate chucking / dechucking gas may be an inert gas such as argon (Ar) or helium (He).

The high frequency power supply 130 selectively generates a high frequency power for processing or high frequency power for substrate chucking / dechucking or a base member of the electrostatic adsorption device 110 through a high frequency supply line 132 electrically connected to the base member 130. Supply to 112.

Specifically, when the high frequency power supply 130 chucks the semiconductor substrate W to the electrostatic adsorption device 100, the base member 112 generates high frequency power for substrate chucking for forming the substrate chucking plasma in the reaction space. When dechucking the semiconductor substrate W in the electrostatic adsorption device 100, the base member is generated by generating a substrate dechucking high frequency power lower than that of the substrate chucking in order to form a plasma for substrate dechucking in the reaction space. Supply to 112. In addition, when the thin film is formed on the semiconductor substrate W, the high frequency power supply 130 generates high frequency power for processing for forming a process plasma in the reaction space and supplies the generated high frequency power to the base member 112.

Meanwhile, the present invention may further include a matcher 134 formed on the high frequency supply line 132 to match the impedance of the high frequency power when the high frequency power is applied. The matcher 134 matches a load impedance and a source impedance of high frequency power by using a plurality of impedance matching elements (not shown). In this case, the plurality of impedance matching elements may be configured of at least one of at least one capacitor and an inductor.

The helium gas circulation device 140 supplies the helium gas having a predetermined flow rate to the helium gas line 118 and supplies the helium gas between the semiconductor substrate W and the insulator 114 to control the temperature of the semiconductor substrate W. When the semiconductor substrate W is chucked, electric charges are provided to the semiconductor substrate W and the insulator 114. At this time, the helium gas circulation device 140 supplies helium gas of 5 sccm or less to the helium gas line 118.

On the other hand, the helium gas circulation device 140 exhausts the helium gas supplied between the semiconductor substrate W and the insulator 114 when dechucking the semiconductor substrate W in the electrostatic adsorption device 100.

The exhaust device 150 exhausts the gas in the process chamber 100 to the outside through the exhaust pipe 152 formed to penetrate the bottom surface of one side of the process chamber 100.

As described above, in the semiconductor device manufacturing apparatus according to the embodiment of the present invention, the insulator 114 and the semiconductor substrate W are formed by the substrate chucking plasma formed in the reaction space of the process chamber 100 by the substrate chucking / dechucking gas. The semiconductor substrate W is chucked to the insulator 114 through electrostatic adsorption by polarization between the electrodes, or is insulated by the substrate dechucking plasma formed in the reaction space of the process chamber 100 by the substrate chucking / dechucking gas. By de-chucking the semiconductor substrate W from the insulator 114 by removing the polarization formed between the 114 and the semiconductor substrate W, the semiconductor substrate W is applied to the insulator 114 without a direct current power source and a direct current electrode. The semiconductor substrate W chucked or chucked to the insulator 114 may be dechucked.

3A to 3E are diagrams for explaining a method of manufacturing a semiconductor device according to an exemplary embodiment of the present inventive concept.

Referring to FIGS. 3A through 3E, a method of manufacturing a semiconductor device according to an exemplary embodiment of the present inventive concept will be described below.

First, as shown in FIG. 3A, the semiconductor substrate W is loaded onto the insulator 112 of the electrostatic adsorption device 110 provided in the process chamber 100 that provides a reaction space.

Subsequently, as illustrated in FIG. 3B, the substrate chucking plasma P1 is formed in the reaction space to chuck the semiconductor substrate W to the insulator 114 of the electrostatic adsorption device 100. The chucking of the semiconductor substrate W will be described in more detail as follows.

First, a gas for chucking a substrate (eg, an inert gas such as argon (Ar) or helium (He)) is supplied to the reaction space of the process chamber 110 through the shower head 120. Then, the substrate chucking plasma P1 generated from the substrate chucking gas supplied to the reaction space is supplied to the base member 112 by supplying the substrate chucking high frequency power generated by the high frequency power supply 130 to the reaction space. do. Then, helium gas is supplied at a predetermined flow rate (for example, 5 sccm or less) between the insulator 114 and the semiconductor substrate W through the helium gas line 118. Accordingly, the semiconductor substrate W is insulated due to the polarization formed between the semiconductor substrate W and the insulator 114 by the substrate chucking plasma P1 and helium gas and / or the surface tension of the semiconductor substrate W. Chucked to 114. That is, when the substrate chucking plasma P1 is formed on the semiconductor substrate W and the helium gas is supplied between the insulator 114 and the semiconductor substrate W, the negative charge (−) of the substrate chucking plasma P1 is applied. Positive charge (+) is accumulated on the surface of the semiconductor substrate (W), and thus negative charge (-) and positive charge () are formed on the back surface of the semiconductor substrate (W) and the surface of the insulator (114) by helium gas. The polarization of +) is formed so that the semiconductor substrate W is chucked to the insulator 114. At this time, since the semiconductor substrate W is a large area wafer of 300 mm or more, the semiconductor substrate W is easily chucked to the insulator 114 by the surface tension due to the large area.

Subsequently, when the semiconductor substrate W is chucked to the insulator 114 by the substrate chucking plasma P1, the process plasma P2 is formed in the reaction space of the process chamber 110 as illustrated in FIG. 3C. Thus, the thin film TF is formed on the semiconductor substrate W. The process of forming the thin film TF on the semiconductor substrate W will be described in more detail as follows.

First, after exhausting the substrate chucking gas remaining in the process chamber 110 using the exhaust device 150, the process gas is supplied to the reaction space of the process chamber 110 through the shower head 120. Here, the process gas may be selected according to the material of the thin film TF to be formed on the semiconductor substrate W. In addition, the exhaust of the substrate chucking gas and the supply of the process gas may be simultaneously performed. Then, the high frequency power for the process generated by the high frequency power supply 130 is supplied to the base member 112 and generated from the process gas to form the process plasma P2 in the reaction space on the semiconductor substrate W. The thin film TF is formed.

Subsequently, when the thin film TF is formed on the semiconductor substrate W, as shown in FIG. 3D, the substrate dechucking plasma P3 is formed in the reaction space to form the semiconductor substrate W in the insulator 114. Dechuck. The dechucking of the semiconductor substrate W will be described in more detail as follows.

First, the process gas remaining in the process chamber 110 is exhausted using the exhaust device 150. Then, the helium gas supplied between the insulator 114 and the semiconductor substrate W is exhausted through the helium gas line 118, and then the substrate is chucked to the reaction space of the process chamber 110 through the shower head 120. The king gas (eg, inert gas such as argon (Ar) or helium (He)) is supplied. Then, the substrate dechucking plasma P3 generated from the substrate dechucking gas supplied to the reaction space is supplied to the base member 112 by supplying the substrate dechucking high frequency power generated by the high frequency power supply 130 to the reaction space. do. Accordingly, the semiconductor substrate W is dechucked on the insulator 114 as the polarization formation formed between the semiconductor substrate W and the insulator 114 is removed by the substrate dechucking plasma P3.

Subsequently, as shown in FIG. 3E, the semiconductor substrate W dechucked from the insulator 114 is unloaded to the outside.

As described above, in the method of manufacturing a semiconductor device according to the embodiment of the present invention, the insulator 114 and the semiconductor are formed by the substrate chucking plasma P1 formed in the reaction space of the process chamber 100 by the substrate chucking / dechucking gas. The substrate dechucking plasma formed by chucking the semiconductor substrate W to the insulator 114 through electrostatic adsorption by polarization between the substrates W or formed in the reaction space of the process chamber 100 by the substrate chucking / dechucking gas. By removing the polarization formed between the insulator 114 and the semiconductor substrate W by P3 and dechucking the semiconductor substrate W from the insulator 114, the semiconductor substrate W can be removed without the conventional DC power supply and DC electrode. ) May be chucked to the insulator 114 or the semiconductor substrate W chucked to the insulator 114 may be dechucked.

Those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing the technical spirit or essential features. Therefore, it is to be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present invention. do.

1 is a view for explaining a conventional electrostatic adsorption apparatus.

2 is a view for explaining a semiconductor device manufacturing apparatus according to an embodiment of the present invention.

3A to 3E are diagrams for explaining a method of manufacturing a semiconductor device according to an exemplary embodiment of the present inventive concept.

<Explanation of Signs of Major Parts of Drawings>

100: process chamber 110: electrostatic adsorption device

112: base member 114: insulator

116: focus ring 118: helium gas line

120: shower head 130: high frequency power

140: helium gas circulation device 150: exhaust device

Claims (21)

A process chamber providing a reaction space; An electrostatic adsorption device provided in the process chamber to load a semiconductor substrate; A shower head which injects a substrate chucking / dechucking gas or a process gas into the reaction space; And Process high frequency power for supplying substrate chucking / dechucking high frequency power for forming substrate chucking / dechucking plasma from the substrate chucking / dechucking gas to the electrostatic adsorption device or forming process plasma from the process gas It includes a high frequency power supply for supplying the electrostatic adsorption device, And the semiconductor substrate is chucked to the electrostatic adsorption device by the substrate chucking plasma or dechucked at the electrostatic adsorption device by the substrate dechucking plasma. The method of claim 1, The electrostatic adsorption device, A base member provided in the process chamber to supply the high frequency power; An insulator formed on the base member; And And a helium gas line formed to penetrate the base member and the insulator. The method of claim 2, The helium gas is supplied between the semiconductor substrate and the insulator through the helium gas line when the semiconductor substrate is chucked, and the helium gas is supplied between the semiconductor substrate and the insulator when the semiconductor substrate is dechucked. And a helium gas circulating device exhausting through the gas line. The method of claim 3, wherein The semiconductor substrate, Chucked to the insulator due to polarization formed between the semiconductor substrate and the insulator by the helium gas and the substrate chucking plasma, and / or surface tension of the semiconductor substrate, And dechucking the insulator by removing the polarization formed between the semiconductor substrate and the insulator by the substrate dechucking plasma. The method of claim 2, The high frequency power supply the high frequency power for substrate chucking to the base member when the semiconductor substrate is chucked, and the high frequency power for substrate dechucking lower than the high frequency power for chucking the substrate to the base member when the semiconductor substrate is chucked. The semiconductor device manufacturing apparatus characterized by the above-mentioned. The method of claim 1, The semiconductor substrate is a semiconductor device manufacturing apparatus, characterized in that the wafer of 300mm or more. The method of claim 1, And said substrate chucking / dechucking gas is an inert gas. Loading a semiconductor substrate into an electrostatic adsorption device provided in a process chamber providing a reaction space; Supplying a gas for substrate chucking to the reaction space; And Chucking the semiconductor substrate to the electrostatic adsorption apparatus by forming a substrate chucking plasma generated from the substrate adsorption gas in the reaction space according to the high frequency power for substrate chucking supplied to the electrostatic adsorption apparatus. A chucking method for a semiconductor substrate. The method of claim 8, And after supplying the plasma for chucking the substrate, supplying helium gas between the electrostatic adsorption apparatus and the semiconductor substrate. The method of claim 9, The semiconductor substrate is chucked by the helium gas and the substrate chucking plasma due to the polarization formed between the semiconductor substrate and the electrostatic adsorption device and / or the surface tension of the semiconductor substrate. Chucking method of semiconductor substrate. The method of claim 8, The semiconductor substrate is a chucking method of a semiconductor substrate, characterized in that the wafer of 300mm or more. The method of claim 8, The substrate chucking gas is a chucking method of a semiconductor substrate, characterized in that the inert gas. Exhausting the process gas remaining in the reaction space of the process chamber having the electrostatic adsorption device on which the semiconductor substrate is chucked; Supplying a gas for substrate dechucking to the reaction space; And And dechucking the semiconductor substrate in the electrostatic adsorption apparatus by forming a substrate dechucking plasma generated from the gas for substrate dechucking in the reaction space according to the high frequency power for substrate dechucking supplied to the electrostatic adsorption apparatus. Dechucking method of a semiconductor substrate, characterized in that. The method of claim 13, Exhausting the process gas, and then exhausting the helium gas supplied between the electrostatic adsorption device and the semiconductor substrate. The method of claim 14, The semiconductor substrate is dechucked in the electrostatic adsorption apparatus due to the exhaust of the helium gas and the removal of the polarization formed between the semiconductor substrate and the electrostatic adsorption apparatus by the substrate dechucking plasma. Way. The method of claim 13, The semiconductor substrate is a dechucking method of a semiconductor substrate, characterized in that the wafer of 300mm or more. The method of claim 13, And said substrate dechucking gas is an inert gas. Loading a semiconductor substrate into an electrostatic adsorption apparatus provided in a process chamber providing a reaction space, and forming a substrate chucking plasma in the reaction space to chuck the semiconductor substrate to the electrostatic adsorption apparatus; Forming a thin film on the semiconductor substrate by forming a process plasma in the reaction space; And Forming a plasma for substrate dechucking in the reaction space, dechucking the semiconductor substrate in the electrostatic adsorption apparatus, and unloading the semiconductor substrate in the electrostatic adsorption apparatus. . The method of claim 18, Chucking the semiconductor substrate is performed by the chucking method of the semiconductor substrate according to any one of claims 8 to 12. The dechucking of the semiconductor substrate is performed by the dechucking method of the semiconductor substrate according to any one of claims 13 to 17. The method of claim 19, Forming a thin film on the semiconductor substrate by forming a process plasma in the reaction space, Evacuating the substrate chucking gas remaining in the reaction space of the process chamber; Supplying a process gas to the reaction space; And And supplying a high frequency power for processing to the electrostatic adsorption device to form the process plasma generated from the process gas in the reaction space to form a thin film on the semiconductor substrate. Method of preparation. The method of claim 19, And the high frequency power for substrate chucking is higher than the high frequency power for substrate dechucking.
KR1020090126245A 2009-12-17 2009-12-17 Method for chucking/dechucking of semiconductor substrate, apparatus and method for manufacturing of semiconductor device using the same KR20110069490A (en)

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KR20160039042A (en) * 2014-09-30 2016-04-08 세메스 주식회사 Method and apparatus for treating substrate
CN106571328A (en) * 2015-10-13 2017-04-19 延原表股份有限公司 Substrate clamping method and substrate clamping system based electrical treatment
KR20180070829A (en) * 2016-12-19 2018-06-27 주식회사 야스 Chucking method and system for substrte by bipolar charging
KR20200056200A (en) * 2018-11-14 2020-05-22 주식회사 원익아이피에스 Apparatus for processing substrate

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160039042A (en) * 2014-09-30 2016-04-08 세메스 주식회사 Method and apparatus for treating substrate
CN106571328A (en) * 2015-10-13 2017-04-19 延原表股份有限公司 Substrate clamping method and substrate clamping system based electrical treatment
CN106571328B (en) * 2015-10-13 2019-07-19 延原表股份有限公司 The locking method of substrate and the locking system of substrate based on on-line treatment
KR20180070829A (en) * 2016-12-19 2018-06-27 주식회사 야스 Chucking method and system for substrte by bipolar charging
KR20200056200A (en) * 2018-11-14 2020-05-22 주식회사 원익아이피에스 Apparatus for processing substrate

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