JP4664670B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4664670B2 JP4664670B2 JP2004373405A JP2004373405A JP4664670B2 JP 4664670 B2 JP4664670 B2 JP 4664670B2 JP 2004373405 A JP2004373405 A JP 2004373405A JP 2004373405 A JP2004373405 A JP 2004373405A JP 4664670 B2 JP4664670 B2 JP 4664670B2
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- metal
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- semiconductor
- semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
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- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
12…外囲器
12a…底板
12b…側壁
13…ねじ穴
14a…入力側金属リード
14b…出力側金属リード
15a、15b…絶縁体
16a〜16d…半導体素子
17…分配回路
18…合成回路
W…ワイヤー
C1、C2…銅
M…支持金属
R…底板の支持金属のない領域
Claims (4)
- 第1金属の間に前記第1金属よりも硬度の大きい第2金属を挟んだ積層構造の一部に凹部を形成し前記第2金属のない領域を設けた底板と、この底板の前記第2金属のない領域に配置した半導体素子とを具備したことを特徴とする半導体装置。
- 前記底板上に形成した金属製の側壁と、この側壁を貫通する金属リードと、前記側壁及び前記金属リードが接触しないように設けられる絶縁体とを設けたことを特徴とする請求項1に記載の半導体装置。
- 前記底板の積層構造は2つの第1金属の間に第2金属を挟んだ3層構造で、前記2つの第1金属は厚さが同じであることを特徴とする請求項1に記載の半導体装置。
- 前記半導体素子を絶縁体で覆い、この絶縁体で覆った半導体素子と前記凹部との隙間に金属を充填したことを特徴とする請求項1に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004373405A JP4664670B2 (ja) | 2004-12-24 | 2004-12-24 | 半導体装置 |
US11/315,488 US7586194B2 (en) | 2004-12-24 | 2005-12-23 | Semiconductor device having exposed heat dissipating metal plate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004373405A JP4664670B2 (ja) | 2004-12-24 | 2004-12-24 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006179791A JP2006179791A (ja) | 2006-07-06 |
JP2006179791A5 JP2006179791A5 (ja) | 2007-06-14 |
JP4664670B2 true JP4664670B2 (ja) | 2011-04-06 |
Family
ID=36610508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004373405A Expired - Fee Related JP4664670B2 (ja) | 2004-12-24 | 2004-12-24 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7586194B2 (ja) |
JP (1) | JP4664670B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101991259B1 (ko) * | 2012-12-12 | 2019-06-24 | 한국전자통신연구원 | 고전력 소자용 패키지 |
JP6193784B2 (ja) * | 2014-02-26 | 2017-09-06 | 京セラ株式会社 | 撮像素子実装用基板及び撮像装置 |
US9960127B2 (en) | 2016-05-18 | 2018-05-01 | Macom Technology Solutions Holdings, Inc. | High-power amplifier package |
US10134658B2 (en) | 2016-08-10 | 2018-11-20 | Macom Technology Solutions Holdings, Inc. | High power transistors |
US11444588B2 (en) * | 2018-11-19 | 2022-09-13 | Illinois Tool Works Inc. | Copper wire bond solution for reducing thermal stress on an intermittently operable chipset controlling RF application for cooking |
US11706852B2 (en) | 2018-11-19 | 2023-07-18 | Illinois Tool Works Inc. | Ribbon bond solution for reducing thermal stress on an intermittently operable chipset controlling RF application for cooking |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63124555A (ja) * | 1986-11-14 | 1988-05-28 | Sumitomo Electric Ind Ltd | 半導体装置用基板 |
JPH0945828A (ja) * | 1995-07-31 | 1997-02-14 | Nec Corp | 半導体装置用パッケージ |
JPH09107050A (ja) * | 1995-10-12 | 1997-04-22 | Nissan Motor Co Ltd | 半導体装置の実装構造 |
JPH10199899A (ja) * | 1997-01-10 | 1998-07-31 | Mitsui High Tec Inc | 半導体装置の製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6431444A (en) * | 1987-07-28 | 1989-02-01 | Hitachi Cable | Porcelain substrate for surface mounting |
EP0714127B1 (en) * | 1991-11-28 | 2003-01-29 | Kabushiki Kaisha Toshiba | Semiconductor package |
JPH07307416A (ja) * | 1994-05-12 | 1995-11-21 | Toshiba Corp | 半導体チップの実装方法及び半導体デバイス |
JP2000349088A (ja) | 1999-06-09 | 2000-12-15 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3500335B2 (ja) * | 1999-09-17 | 2004-02-23 | 株式会社東芝 | 高周波回路装置 |
JP2001319992A (ja) * | 2000-02-28 | 2001-11-16 | Shinko Electric Ind Co Ltd | 配線基板、半導体装置及びそれらの製造方法 |
JP4574295B2 (ja) | 2003-09-19 | 2010-11-04 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
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2004
- 2004-12-24 JP JP2004373405A patent/JP4664670B2/ja not_active Expired - Fee Related
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2005
- 2005-12-23 US US11/315,488 patent/US7586194B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63124555A (ja) * | 1986-11-14 | 1988-05-28 | Sumitomo Electric Ind Ltd | 半導体装置用基板 |
JPH0945828A (ja) * | 1995-07-31 | 1997-02-14 | Nec Corp | 半導体装置用パッケージ |
JPH09107050A (ja) * | 1995-10-12 | 1997-04-22 | Nissan Motor Co Ltd | 半導体装置の実装構造 |
JPH10199899A (ja) * | 1997-01-10 | 1998-07-31 | Mitsui High Tec Inc | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2006179791A (ja) | 2006-07-06 |
US7586194B2 (en) | 2009-09-08 |
US20060138654A1 (en) | 2006-06-29 |
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