JP4642634B2 - 音響センサの製造方法 - Google Patents
音響センサの製造方法 Download PDFInfo
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- JP4642634B2 JP4642634B2 JP2005316594A JP2005316594A JP4642634B2 JP 4642634 B2 JP4642634 B2 JP 4642634B2 JP 2005316594 A JP2005316594 A JP 2005316594A JP 2005316594 A JP2005316594 A JP 2005316594A JP 4642634 B2 JP4642634 B2 JP 4642634B2
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- circuit board
- acoustic sensor
- metal
- manufacturing
- metal cap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13062—Junction field-effect transistor [JFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Details Of Audible-Bandwidth Transducers (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Description
とを実装する第1の工程と、位置決め孔をもつ金属トレイを用意し、その位置決め孔内に、金属キャップを、配置する第2の工程と、前記電気音響変換素子及び前記電子回路部品を覆うように、前記金属トレイを前記回路基板の実装面に係合させることによって、前記金属キャップを前記回路基板と接触させる第3の工程と、前記第3の工程の後に前記回路基板を分割して個別化する第4の工程とを有する音響センサの製造方法であって、前記電気音響変換素子は、振動電極及び固定電極を有しており、前記振動電極及び前記固定電極のどちらか一方を接地端子に接続させている。
また、金属キャップは、半田付け時の熱を効率的に外に放熱する役目をするため、半田付け時の高熱による、封止体内部の素子の劣化を効果的に防止することができる。また、金属キャップは電磁シールドとして機能するためノイズの抑制効果も得ることができる。
(第1の実施形態)
また、電子回路部品(104a,104b)と回路基板90とは、実装面上に形成されている配線層(不図示)によって相互に接続される。
7 シリコン酸化膜
9 絶縁膜
10 低抵抗のシリコン部材
11 音孔
12 接合層
90 回路基板
100 金属キャップ
102 MEMS技術により製造された電気音響変換素子(ECM,シリコンマイクロホン)
104 電子回路部品(JFET)
107 容量素子
106(106a,106b) 樹脂系接合材料
108 ボンディングワイヤ
120 金属トレイ
122 半田ペースト
Claims (4)
- 回路基板上に、樹脂系接合材料を介して電気音響変換素子と、電子回路部品とを実装する第1の工程と、
位置決め孔をもつ金属トレイを用意し、その位置決め孔内に、金属キャップを、配置する第2の工程と、
前記電気音響変換素子及び前記電子回路部品を覆うように、前記金属トレイを前記回路基板の実装面に係合させることによって、前記金属キャップを前記回路基板と接触させる第3の工程と、
前記第3の工程の後に前記回路基板を分割して個別化する第4の工程とを有しており、
前記電気音響変換素子は、振動電極及び固定電極を有しており、
前記振動電極及び前記固定電極のどちらか一方を接地端子に接続させていることを特徴とする音響センサの製造方法。 - 請求項1に記載の音響センサの製造方法であって、
前記第4の工程の前に、前記孔内に配置された前記金属キャップが、前記回路基板と接触した状態で、熱処理を行う第5の工程を有する音響センサの製造方法。 - 請求項1または2に記載の音響センサの製造方法であって、
前記第3の工程において、前記金属キャップと前記回路基板は、半田を介して接触している音響センサの製造方法。 - 請求項1〜3のいずれか1項に記載の音響センサの製造方法であって、
前記金属キャップは、前記回路基板と接触する部分において、前記回路基板と平行になるような、ヒサシを有している音響センサの製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005316594A JP4642634B2 (ja) | 2005-10-31 | 2005-10-31 | 音響センサの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005316594A JP4642634B2 (ja) | 2005-10-31 | 2005-10-31 | 音響センサの製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007124500A JP2007124500A (ja) | 2007-05-17 |
JP2007124500A5 JP2007124500A5 (ja) | 2010-01-14 |
JP4642634B2 true JP4642634B2 (ja) | 2011-03-02 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005316594A Expired - Fee Related JP4642634B2 (ja) | 2005-10-31 | 2005-10-31 | 音響センサの製造方法 |
Country Status (1)
Country | Link |
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JP (1) | JP4642634B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101008399B1 (ko) * | 2007-09-03 | 2011-01-14 | 주식회사 비에스이 | 내벽을 금속성 혹은 전도성 물질로 감싼 세라믹 패키지를이용한 콘덴서 마이크로폰 |
CN101237719B (zh) * | 2007-12-28 | 2012-05-23 | 深圳市豪恩电声科技有限公司 | 一种硅电容式麦克风及其制作方法 |
JP6650154B2 (ja) * | 2016-03-28 | 2020-02-19 | 国立大学法人東北大学 | 圧力センサ |
CN111422825B (zh) * | 2020-06-11 | 2020-09-22 | 潍坊歌尔微电子有限公司 | 传感器的制造方法 |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5478991A (en) * | 1977-11-18 | 1979-06-23 | Philips Nv | Semiconductor transducer assembly |
JPH05259478A (ja) * | 1992-03-12 | 1993-10-08 | Fuji Electric Co Ltd | 半導体圧力センサの製造方法 |
JPH09119875A (ja) * | 1995-10-25 | 1997-05-06 | Matsushita Electric Works Ltd | 半導体圧力センサ |
JPH11287723A (ja) * | 1998-04-01 | 1999-10-19 | Yazaki Corp | 半導体圧力センサ |
JP2001054196A (ja) * | 1999-08-11 | 2001-02-23 | Kyocera Corp | エレクトレットコンデンサマイクロホン |
JP2002359445A (ja) * | 2001-03-22 | 2002-12-13 | Matsushita Electric Ind Co Ltd | レーザー加工用の誘電体基板およびその加工方法ならび半導体パッケージおよびその製作方法 |
DE10303263A1 (de) * | 2003-01-28 | 2004-08-05 | Infineon Technologies Ag | Sensormodul |
US6781231B2 (en) * | 2002-09-10 | 2004-08-24 | Knowles Electronics Llc | Microelectromechanical system package with environmental and interference shield |
JP2004254138A (ja) * | 2003-02-20 | 2004-09-09 | Sanyo Electric Co Ltd | コンデンサマイクロホン |
JP2004537182A (ja) * | 2000-11-28 | 2004-12-09 | ノウレス エレクトロニクス, リミテッド ライアビリティ カンパニー | 小型シリコンコンデンサマイクロフォンおよびその製造方法 |
JP2005150652A (ja) * | 2003-11-20 | 2005-06-09 | Aoi Electronics Co Ltd | 回路基板 |
JP2005191208A (ja) * | 2003-12-25 | 2005-07-14 | Matsushita Electric Ind Co Ltd | エレクトレットコンデンサー |
JP2005262353A (ja) * | 2004-03-17 | 2005-09-29 | Sony Corp | 電子部品および電子部品の製造方法 |
JP2007082233A (ja) * | 2005-09-14 | 2007-03-29 | Bse Co Ltd | シリコンコンデンサーマイクロフォン及びそのパッケージ方法 |
-
2005
- 2005-10-31 JP JP2005316594A patent/JP4642634B2/ja not_active Expired - Fee Related
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5478991A (en) * | 1977-11-18 | 1979-06-23 | Philips Nv | Semiconductor transducer assembly |
JPH05259478A (ja) * | 1992-03-12 | 1993-10-08 | Fuji Electric Co Ltd | 半導体圧力センサの製造方法 |
JPH09119875A (ja) * | 1995-10-25 | 1997-05-06 | Matsushita Electric Works Ltd | 半導体圧力センサ |
JPH11287723A (ja) * | 1998-04-01 | 1999-10-19 | Yazaki Corp | 半導体圧力センサ |
JP2001054196A (ja) * | 1999-08-11 | 2001-02-23 | Kyocera Corp | エレクトレットコンデンサマイクロホン |
JP2004537182A (ja) * | 2000-11-28 | 2004-12-09 | ノウレス エレクトロニクス, リミテッド ライアビリティ カンパニー | 小型シリコンコンデンサマイクロフォンおよびその製造方法 |
JP2002359445A (ja) * | 2001-03-22 | 2002-12-13 | Matsushita Electric Ind Co Ltd | レーザー加工用の誘電体基板およびその加工方法ならび半導体パッケージおよびその製作方法 |
US6781231B2 (en) * | 2002-09-10 | 2004-08-24 | Knowles Electronics Llc | Microelectromechanical system package with environmental and interference shield |
DE10303263A1 (de) * | 2003-01-28 | 2004-08-05 | Infineon Technologies Ag | Sensormodul |
JP2004254138A (ja) * | 2003-02-20 | 2004-09-09 | Sanyo Electric Co Ltd | コンデンサマイクロホン |
JP2005150652A (ja) * | 2003-11-20 | 2005-06-09 | Aoi Electronics Co Ltd | 回路基板 |
JP2005191208A (ja) * | 2003-12-25 | 2005-07-14 | Matsushita Electric Ind Co Ltd | エレクトレットコンデンサー |
JP2005262353A (ja) * | 2004-03-17 | 2005-09-29 | Sony Corp | 電子部品および電子部品の製造方法 |
JP2007082233A (ja) * | 2005-09-14 | 2007-03-29 | Bse Co Ltd | シリコンコンデンサーマイクロフォン及びそのパッケージ方法 |
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