JP4620962B2 - 集積回路装置の製造方法及び酸化バナジウム膜の形成方法 - Google Patents
集積回路装置の製造方法及び酸化バナジウム膜の形成方法 Download PDFInfo
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- JP4620962B2 JP4620962B2 JP2004101108A JP2004101108A JP4620962B2 JP 4620962 B2 JP4620962 B2 JP 4620962B2 JP 2004101108 A JP2004101108 A JP 2004101108A JP 2004101108 A JP2004101108 A JP 2004101108A JP 4620962 B2 JP4620962 B2 JP 4620962B2
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- vanadium oxide
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- resist film
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- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 title claims description 79
- 229910001935 vanadium oxide Inorganic materials 0.000 title claims description 79
- 238000000034 method Methods 0.000 title claims description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000005530 etching Methods 0.000 claims description 39
- 229910052782 aluminium Inorganic materials 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 238000004380 ashing Methods 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 48
- 229910052814 silicon oxide Inorganic materials 0.000 description 48
- 229910052581 Si3N4 Inorganic materials 0.000 description 35
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 35
- 239000011229 interlayer Substances 0.000 description 32
- 239000010410 layer Substances 0.000 description 30
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 29
- 239000007789 gas Substances 0.000 description 24
- 239000000243 solution Substances 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000007864 aqueous solution Substances 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 9
- 239000010936 titanium Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- -1 for example Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Description
更に、層間絶縁膜4上には、抵抗体膜9、シリコン酸化膜13及びシリコン窒化膜14を埋め込むように、絶縁膜(図示せず)が設けられている。抵抗体膜9は、例えばこの集積回路装置における多層配線層の最上層に配置されている。
2、3、7、8;配線
5、6;ビア
9;抵抗体膜
9a、19a;膜
13、13a、22;シリコン酸化膜
14、14a;シリコン窒化膜
15;アルミニウム膜
16、20;レジストパターン
17;絶縁膜
19;酸化バナジウム膜
21;損傷部分
Claims (14)
- 基板上に、その表面に2本の配線が露出した絶縁膜を形成する工程と、この絶縁膜上における前記2本の配線の露出部を含む領域に酸化バナジウムを含む膜を形成する工程と、この膜上に酸化バナジウムとは異なる第1の材料からなる第1層を形成する工程と、この第1層上に酸化バナジウム及び前記第1の材料とは異なる第2の材料からなる第2層を形成する工程と、この第2層上にレジスト膜を形成する工程と、前記2本の配線の露出部及びこの露出部間を接続する領域の直上域を含む領域に前記レジスト膜が残留するように前記レジスト膜をパターニングする工程と、前記パターニングされたレジスト膜をマスクとして前記第2層をエッチングして選択的に除去しパターニングする工程と、前記パターニングされたレジスト膜を除去する工程と、前記パターニングされた第2層をマスクとして前記第1層及び前記酸化バナジウムを含む膜をエッチングして選択的に除去する工程と、を有することを特徴とする集積回路装置の製造方法。
- 前記レジスト膜を除去する工程は、前記レジスト膜を剥離液に溶解させる工程を有することを特徴とする請求項1に記載の集積回路装置の製造方法。
- 前記レジスト膜を除去する工程は、前記レジスト膜に対して酸素プラズマアッシングを行う工程を有することを特徴とする請求項1に記載の集積回路装置の製造方法。
- 前記第1層を形成する工程において、前記第1の材料を、シリコンを含む絶縁材料とすることを特徴とする請求項1乃至3のいずれか1項に記載の集積回路装置の製造方法。
- 前記第2層を形成する工程において、前記第2の材料を、シリコンを含む絶縁材料とすることを特徴とする請求項1乃至4のいずれか1項に記載の集積回路装置の製造方法。
- 前記第2層を形成する工程において、前記第2の材料を、金属又は合金とすることを特徴とする請求項1乃至4のいずれか1項に記載の集積回路装置の製造方法。
- 前記第2の材料を、Al、Ti、Cu、Ta、W及びNiからなる群から選択された1種の金属若しくはその合金又は2種以上の金属を含む合金とすることを特徴とする請求項6に記載の集積回路装置の製造方法。
- 基板上に酸化バナジウムを含む膜を成膜する工程と、この膜上に酸化バナジウムとは異なる第1の材料からなる第1層を形成する工程と、この第1層上に酸化バナジウム及び前記第1の材料とは異なる第2の材料からなる第2層を形成する工程と、この第2層上にレジスト膜を形成する工程と、前記レジスト膜をパターニングする工程と、前記パターニングされたレジスト膜をマスクとして前記第2層をエッチングして選択的に除去しパターニングする工程と、前記パターニングされたレジスト膜を除去する工程と、前記パターニングされた第2層をマスクとして前記第1層及び前記膜をエッチングして選択的に除去する工程と、を有することを特徴とする酸化バナジウム膜の形成方法。
- 前記レジスト膜を除去する工程は、前記レジスト膜を剥離液に溶解させる工程を有することを特徴とする請求項8に記載の酸化バナジウム膜の形成方法。
- 前記レジスト膜を除去する工程は、前記レジスト膜に対して酸素プラズマアッシングを行う工程を有することを特徴とする請求項8に記載の酸化バナジウム膜の形成方法。
- 前記第1層を形成する工程において、前記第1の材料を、シリコンを含む絶縁材料とすることを特徴とする請求項8乃至10のいずれか1項に記載の酸化バナジウム膜の形成方法。
- 前記第2層を形成する工程において、前記第2の材料を、シリコンを含む絶縁材料とすることを特徴とする請求項8乃至11のいずれか1項に記載の酸化バナジウム膜の形成方法。
- 前記第2層を形成する工程において、前記第2の材料を、金属又は合金とすることを特徴とする請求項8乃至11のいずれか1項に記載の酸化バナジウム膜の形成方法。
- 前記第2の材料を、Al、Ti、Cu、Ta、W及びNiからなる群から選択された1種の金属若しくはその合金又は2種以上の金属を含む合金とすることを特徴とする請求項13に記載の酸化バナジウム膜の形成方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004101108A JP4620962B2 (ja) | 2004-03-30 | 2004-03-30 | 集積回路装置の製造方法及び酸化バナジウム膜の形成方法 |
US11/086,743 US7462921B2 (en) | 2004-03-30 | 2005-03-23 | Integrated circuit device, method of manufacturing the same and method of forming vanadium oxide film |
CNB2005100625193A CN100490149C (zh) | 2004-03-30 | 2005-03-30 | 集成电路器件及其制造方法以及形成钒氧化物膜的方法 |
Applications Claiming Priority (1)
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JP2004101108A JP4620962B2 (ja) | 2004-03-30 | 2004-03-30 | 集積回路装置の製造方法及び酸化バナジウム膜の形成方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005286239A JP2005286239A (ja) | 2005-10-13 |
JP4620962B2 true JP4620962B2 (ja) | 2011-01-26 |
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JP2004101108A Expired - Fee Related JP4620962B2 (ja) | 2004-03-30 | 2004-03-30 | 集積回路装置の製造方法及び酸化バナジウム膜の形成方法 |
Country Status (3)
Country | Link |
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US (1) | US7462921B2 (ja) |
JP (1) | JP4620962B2 (ja) |
CN (1) | CN100490149C (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP3810411B2 (ja) * | 2004-01-23 | 2006-08-16 | Necエレクトロニクス株式会社 | 集積回路装置 |
JP4541717B2 (ja) * | 2004-02-09 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | 集積回路装置及びその製造方法 |
JP5567087B2 (ja) | 2012-09-20 | 2014-08-06 | 株式会社東芝 | 半導体装置の製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1174545A (ja) * | 1997-08-27 | 1999-03-16 | Nec Corp | マイクロブリッジ構造の製造方法 |
JP2002048636A (ja) * | 2000-08-03 | 2002-02-15 | Sharp Corp | 赤外線センサ |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH01302849A (ja) | 1988-05-31 | 1989-12-06 | Fujitsu Ltd | 半導体集積回路装置 |
JP3067737B2 (ja) | 1998-05-18 | 2000-07-24 | 日本電気株式会社 | 酸化バナジウム膜のプラズマエッチング方法 |
JP4135857B2 (ja) * | 2001-03-27 | 2008-08-20 | 独立行政法人産業技術総合研究所 | 赤外線センサの製造方法 |
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2004
- 2004-03-30 JP JP2004101108A patent/JP4620962B2/ja not_active Expired - Fee Related
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2005
- 2005-03-23 US US11/086,743 patent/US7462921B2/en active Active - Reinstated
- 2005-03-30 CN CNB2005100625193A patent/CN100490149C/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1174545A (ja) * | 1997-08-27 | 1999-03-16 | Nec Corp | マイクロブリッジ構造の製造方法 |
JP2002048636A (ja) * | 2000-08-03 | 2002-02-15 | Sharp Corp | 赤外線センサ |
Also Published As
Publication number | Publication date |
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CN1677670A (zh) | 2005-10-05 |
US20050221573A1 (en) | 2005-10-06 |
CN100490149C (zh) | 2009-05-20 |
US7462921B2 (en) | 2008-12-09 |
JP2005286239A (ja) | 2005-10-13 |
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