JP4613014B2 - Cmosイメージセンサの単位画素 - Google Patents

Cmosイメージセンサの単位画素 Download PDF

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Publication number
JP4613014B2
JP4613014B2 JP2004011645A JP2004011645A JP4613014B2 JP 4613014 B2 JP4613014 B2 JP 4613014B2 JP 2004011645 A JP2004011645 A JP 2004011645A JP 2004011645 A JP2004011645 A JP 2004011645A JP 4613014 B2 JP4613014 B2 JP 4613014B2
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Prior art keywords
transistor
gate
reset
image sensor
cmos image
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Expired - Fee Related
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Japanese (ja)
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JP2004336004A (ja
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源 鎬 李
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クロステック・キャピタル,リミテッド・ライアビリティ・カンパニー
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14609Pixel-elements with integrated switching, control, storage or amplification elements
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/626Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2004011645A 2003-04-30 2004-01-20 Cmosイメージセンサの単位画素 Expired - Fee Related JP4613014B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030027884A KR100955735B1 (ko) 2003-04-30 2003-04-30 씨모스 이미지 센서의 단위화소

Publications (2)

Publication Number Publication Date
JP2004336004A JP2004336004A (ja) 2004-11-25
JP4613014B2 true JP4613014B2 (ja) 2011-01-12

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JP2004011645A Expired - Fee Related JP4613014B2 (ja) 2003-04-30 2004-01-20 Cmosイメージセンサの単位画素

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US (1) US6900485B2 (ko)
JP (1) JP4613014B2 (ko)
KR (1) KR100955735B1 (ko)

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Also Published As

Publication number Publication date
KR20040093993A (ko) 2004-11-09
JP2004336004A (ja) 2004-11-25
US6900485B2 (en) 2005-05-31
KR100955735B1 (ko) 2010-04-30
US20040217426A1 (en) 2004-11-04

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